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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K8S6615EBD-FE7D0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm				BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K8F5715ETM-SE1E	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B44						Not Qualified	TOP	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8S2815EBC-SE7D	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel		8MX16	8M	-25 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44						Not Qualified	BOTTOM	134217728 bit							NOR TYPE	.00005 Amp		YES	70 ns		YES
K8S1315ETC-SE1C0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B64		1.95 V	1 mm				TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE				100 ns	1.8
K8P3315UQB-PE4D0	Samsung	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel		2MX16	2M	-25 Cel	16,62	YES		YES	DUAL	R-PDSO-G48						Not Qualified	BOTTOM/TOP	33554432 bit			8				NOR TYPE	.00003 Amp		YES	70 ns		YES
K8C5715EBM-DE1D0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B167	2	1.95 V	1.4 mm		10.5 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE	.00002 Amp	14 mm	YES	100 ns	1.8	YES
K8F1215EBM-FE1C0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		32MX16	32M	-25 Cel			TIN LEAD		BOTTOM	R-PBGA-B64		1.95 V	1 mm		9 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e0			NOR TYPE		11 mm		110 ns	1.8
K8C5415ETM-FE1E0	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167	3					Not Qualified	TOP	268435456 bit						240	NOR TYPE	.00002 Amp		YES	100 ns		YES
K8C5615ETM-FE1F	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167						Not Qualified	TOP	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8C1315EBM-FE1E	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167	3					Not Qualified	BOTTOM	536870912 bit						240	NOR TYPE	.00002 Amp		YES	110 ns		YES
K8S1315ETC-DE1F0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B64		1.95 V	1 mm			Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp		YES	100 ns	1.8	YES
K8A6515ETC-DE7D0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm		8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11 mm		70 ns	1.8
K8S3215EBF-HE7B	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel	3-STATE	2MX16	2M	-25 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B44		1.95 V	1 mm	100000 Write/Erase Cycles	5 mm	Not Qualified	BOTTOM	33554432 bit	1.7 V						NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K8P3315UQB-EE4D0	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel		2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified	BOTTOM/TOP	33554432 bit			8				NOR TYPE	.00003 Amp		YES	70 ns		YES
K8S2815ETC-DE7E	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel		8MX16	8M	-25 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44						Not Qualified	TOP	134217728 bit							NOR TYPE	.00005 Amp		YES	70 ns		YES
K8S2815EBC-DE7BT	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel		8MX16	8M	-25 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44						Not Qualified	BOTTOM	134217728 bit							NOR TYPE	.00005 Amp		YES	70 ns		YES
K8F5615ETM-FE1E0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B88		1.95 V	1.2 mm		8 mm	Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0			NOR TYPE	.00002 Amp	11 mm	YES	100 ns	1.8	YES
K8A6415ETC-DE7BT	Samsung	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		4MX16	4M	-25 Cel	8,127	YES			BOTTOM	R-PBGA-B88					8 mm	Not Qualified	TOP	67108864 bit			8				NOR TYPE	.00005 Amp	11 mm	YES	70 ns		YES
K8S6615EBD-SE7D0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm			Not Qualified	BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K8S6415ETB-DE7B0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel		4MX16	4M	-25 Cel	8,127	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B44	2	1.95 V	1 mm		7.5 mm	Not Qualified	TOP	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE	.00005 Amp	8.5 mm	YES	90 ns	1.8	YES
K8A6315ETC-HE7B0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm		8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11 mm		70 ns	1.8
K8S1115EBC-SE1F0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B64		1.95 V	1 mm			Not Qualified	BOTTOM	536870912 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp		YES	100 ns	1.8	YES
K8A6515EBC-FE7B0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm		8 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11 mm		70 ns	1.8
K8A6315ETC-FE7B0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm		8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11 mm		70 ns	1.8
K8F1215ETM-SE1C0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		32MX16	32M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	2	1.95 V	1 mm		9 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1			NOR TYPE		11 mm		110 ns	1.8
K8A2815EBB-FE7C	Samsung	FLASH	OTHER		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY					85 Cel		8MX16	8M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B	2	1.95 V				Not Qualified		134217728 bit	1.7 V			e1							80 ns	1.8
K8S1115EZC-SE1E0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel		32MX16	32M	-25 Cel	512	YES			BOTTOM	R-PBGA-B64		1.95 V	1 mm			Not Qualified		536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp		YES	100 ns	1.8	YES
K8C5615ETM-DE1F	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167						Not Qualified	TOP	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
KFM1G16Q2B-DEB60	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	67108864 words	1.8	YES	1.8	16	GRID ARRAY	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		64MX16	64M	-30 Cel	1K	YES		YES	BOTTOM	R-PBGA-B63	3					Not Qualified		1073741824 bit			1K			260	SLC NAND TYPE	.00005 Amp			76 ns	1.8	NO
KFG1216U2A-FEB60	Samsung	FLASH	OTHER	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3.3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-30 Cel			TIN LEAD		BOTTOM	R-PBGA-B63		3.6 V	1 mm		9.5 mm	Not Qualified		536870912 bit	2.7 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE		e0					12 mm		76 ns	2.7
K8S6615ETD-FE7E0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm			Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K8A6415EBC-SE7E	Samsung	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		4MX16	4M	-25 Cel	8,127	YES			BOTTOM	R-PBGA-B88					8 mm	Not Qualified	BOTTOM	67108864 bit			8				NOR TYPE	.00005 Amp	11 mm	YES	70 ns		YES
K8C5615EBM-FE1E	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167						Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8A6415EBC-DE7B	Samsung	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		4MX16	4M	-25 Cel	8,127	YES			BOTTOM	R-PBGA-B88					8 mm	Not Qualified	BOTTOM	67108864 bit			8				NOR TYPE	.00005 Amp	11 mm	YES	70 ns		YES
K8S2815ETC-FE7BT	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel		8MX16	8M	-25 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44						Not Qualified	TOP	134217728 bit							NOR TYPE	.00005 Amp		YES	70 ns		YES
K8S6415EBB-DE7B0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel		4MX16	4M	-25 Cel	8,127	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B44	2	1.95 V	1 mm		7.5 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE	.00005 Amp	8.5 mm	YES	90 ns	1.8	YES
KFK8G16Q2M-DEB8	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	35 mA	536870912 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		512MX16	512M	-30 Cel	8K	YES		YES	BOTTOM	R-PBGA-B63						Not Qualified		8589934592 bit			2K				SLC NAND TYPE	.0001 Amp			9 ns		NO
KFG1G16Q2C-DEB6	Samsung	FLASH	OTHER	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY				.8 mm	85 Cel		64MX16	64M	-30 Cel					BOTTOM	R-PBGA-B63		1.95 V	1 mm		10 mm	Not Qualified	BOTTOM	1073741824 bit	1.7 V	BOTTOM BOOT BLOCK							13 mm		76 ns	1.8
K8F1315EBM-DE1F	Samsung	FLASH	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B64						Not Qualified	BOTTOM	536870912 bit							NOR TYPE	.00002 Amp		YES	110 ns		YES
K8P2716UZC-QE4D0	Samsung	FLASH	OTHER	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	55 mA	8388608 words	3	YES	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel		8MX16	8M	-25 Cel	128	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified		134217728 bit	2.7 V		8/16			260	NOR TYPE	.00004 Amp	18.4 mm	YES	70 ns	3	YES
K8F5615EBM-SE1D0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B44	2	1.95 V	1 mm		8 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE	.00002 Amp	9 mm	YES	100 ns	1.8	YES
KFM1G16Q2M-DEB6T	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	67108864 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		64MX16	64M	-30 Cel	1K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1					Not Qualified		1073741824 bit			1K	e3			SLC NAND TYPE	.00005 Amp			76 ns		NO
K8S2815ETC-FE7E	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel		8MX16	8M	-25 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44						Not Qualified	TOP	134217728 bit							NOR TYPE	.00005 Amp		YES	70 ns		YES
K8P3215UQB-EE4AT	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel		2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64	3					Not Qualified	BOTTOM/TOP	33554432 bit			8			260	NOR TYPE	.00003 Amp		YES	55 ns		YES
K8S2815ETC-SE7B0	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel		8MX16	8M	-25 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44						Not Qualified	TOP	134217728 bit							NOR TYPE	.00005 Amp		YES	70 ns		YES
K8S6415ETB-FE7C0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel		4MX16	4M	-25 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B44		1.95 V	1 mm		7.5 mm	Not Qualified	TOP	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE			30	240	NOR TYPE	.00005 Amp	8.5 mm	YES	80 ns	1.8	YES
K8P6415UQB-DE4D	Samsung	FLASH	OTHER	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	.8 mm	85 Cel		4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	R-PBGA-B48	3					Not Qualified	BOTTOM/TOP	67108864 bit			8			260	NOR TYPE	.00003 Amp		YES	70 ns		YES
KFM1G16Q2C-DEB60	Samsung	FLASH	OTHER	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	40 mA	67108864 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		64MX16	64M	-30 Cel	1K	YES		YES	BOTTOM	R-PBGA-B63	3	1.95 V	1 mm		10 mm	Not Qualified		1073741824 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	1K			260	SLC NAND TYPE	.00005 Amp	13 mm		76 ns	1.8	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.