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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
UPD29F032204ALF9-A85BX-BS2	Renesas Electronics	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	45 mA	2097152 words	3.3	YES	3.3	16	GRID ARRAY, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-25 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B63							Not Qualified	BOTTOM	33554432 bit						NOR TYPE	.000005 Amp		YES	85 ns		YES
HB28B128PSM2	Renesas Electronics	FLASH CARD	OTHER	7		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	SERIAL	SYNCHRONOUS			134217728 words	3			8	MICROELECTRONIC ASSEMBLY					85 Cel		128MX8	128M	-25 Cel					UNSPECIFIED	R-XXMA-X7		3.6 V			20 MHz		Not Qualified		1073741824 bit	2.7 V					NOR TYPE					2.7
UPD29F032203ALF9-B85TX-BS2	Renesas Electronics	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	45 mA	2097152 words	3	YES	3	16	GRID ARRAY, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-25 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B63							Not Qualified	TOP	33554432 bit						NOR TYPE	.000005 Amp		YES	85 ns		YES
HB28K032RM3	Renesas Electronics	FLASH CARD	OTHER	7		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	SERIAL	SYNCHRONOUS			33554432 words	3			8	MICROELECTRONIC ASSEMBLY					85 Cel		32MX8	32M	-25 Cel					UNSPECIFIED	R-XXMA-X7		3.6 V			20 MHz		Not Qualified		268435456 bit	2.7 V					NOR TYPE					2.7
HB28E016MM2	Renesas Electronics	FLASH CARD	OTHER	7		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	SERIAL	SYNCHRONOUS			16777216 words	3			8	MICROELECTRONIC ASSEMBLY					85 Cel		16MX8	16M	-25 Cel					UNSPECIFIED	R-XXMA-X7		3.6 V			20 MHz		Not Qualified		134217728 bit	2.7 V					NOR TYPE					2.7
UPD29F032204ALGZ-A85TX-MJH	Renesas Electronics	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	45 mA	2097152 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX16	2M	-25 Cel	8,63	YES		YES	DUAL	R-PDSO-G48							Not Qualified	TOP	33554432 bit						NOR TYPE	.000005 Amp		YES	85 ns		YES
UPD29F800ALGX-B12TX	Renesas Electronics	FLASH	OTHER	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		512KX16	512K	-25 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G44		3.6 V	3 mm	100000 Write/Erase Cycles		13.24 mm	Not Qualified	TOP	8388608 bit	2.7 V			e0		NOR TYPE	.000005 Amp	27.83 mm		120 ns		YES
UPD29F032203ALF9-A85BX-BS2	Renesas Electronics	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	45 mA	2097152 words	3.3	YES	3.3	16	GRID ARRAY, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-25 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B63							Not Qualified	BOTTOM	33554432 bit						NOR TYPE	.000005 Amp		YES	85 ns		YES
UPD29F032202ALF9-A85BX-BS2	Renesas Electronics	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	45 mA	2097152 words	3.3	YES	3.3	16	GRID ARRAY, FINE PITCH	BGA63,8X12,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-25 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B63							Not Qualified	BOTTOM	33554432 bit						NOR TYPE	.000005 Amp		YES	85 ns		YES
UPD29F008ALGZ-B12BXLKH	Renesas Electronics	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel	YES	1MX8	1M	-25 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40				100000 Write/Erase Cycles			Not Qualified	BOTTOM	8388608 bit				e0		NOR TYPE	.000005 Amp			120 ns		YES
UPD29F800ALGZ-B90TXMJH	Renesas Electronics	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	524288 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		512KX16	512K	-20 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48				100000 Write/Erase Cycles			Not Qualified	TOP	8388608 bit				e0		NOR TYPE	.000005 Amp			90 ns		YES
UPD29F064115F9-EB85X-CD5	Renesas Electronics	FLASH	OTHER	85	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN LEAD		BOTTOM	R-PBGA-B85		1.95 V	1.21 mm			8 mm	Not Qualified	BOTTOM/TOP	67108864 bit	1.65 V			e0		NOR TYPE		11 mm		85 ns	1.8
UPD29F008ALGZ-C15TXLKH	Renesas Electronics	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	2.2/2.7	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel	YES	1MX8	1M	-25 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40				100000 Write/Erase Cycles			Not Qualified	TOP	8388608 bit				e0		NOR TYPE	.000005 Amp			150 ns		YES
UPD29F800ALGZ-C15BXMKH	Renesas Electronics	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	524288 words		YES	2.2/2.7	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	YES	512KX16	512K	-20 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48				100000 Write/Erase Cycles			Not Qualified	BOTTOM	8388608 bit				e0		NOR TYPE	.000005 Amp			150 ns		YES
HB28L064MM3	Renesas Electronics	FLASH CARD	OTHER	7		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	SERIAL	SYNCHRONOUS			67108864 words	3			8	MICROELECTRONIC ASSEMBLY					85 Cel		64MX8	64M	-25 Cel					UNSPECIFIED	R-XXMA-X7		3.6 V			20 MHz		Not Qualified		536870912 bit	2.7 V					NOR TYPE					2.7
UPD29F032202ALGZ-A85BX-MJH	Renesas Electronics	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	45 mA	2097152 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX16	2M	-25 Cel	8,63	YES		YES	DUAL	R-PDSO-G48							Not Qualified	BOTTOM	33554432 bit						NOR TYPE	.000005 Amp		YES	85 ns		YES
UPD29F032202ALGZ-B85BX-MJH	Renesas Electronics	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	45 mA	2097152 words	3	YES	3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX16	2M	-25 Cel	8,63	YES		YES	DUAL	R-PDSO-G48							Not Qualified	BOTTOM	33554432 bit						NOR TYPE	.000005 Amp		YES	85 ns		YES
UPD29F032204ALGZ-B85BX-MJH	Renesas Electronics	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	45 mA	2097152 words	3	YES	3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX16	2M	-25 Cel	8,63	YES		YES	DUAL	R-PDSO-G48							Not Qualified	BOTTOM	33554432 bit						NOR TYPE	.000005 Amp		YES	85 ns		YES
HB288064MM1	Renesas Electronics	FLASH CARD	OTHER	7		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	SERIAL	SYNCHRONOUS			67108864 words	3			8	MICROELECTRONIC ASSEMBLY					85 Cel		64MX8	64M	-25 Cel					UNSPECIFIED	X-XXMA-X7		3.6 V			20 MHz		Not Qualified		536870912 bit	2.7 V					NOR TYPE					2.7
HB28J128RM3	Renesas Electronics	FLASH CARD	OTHER	7		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	SERIAL	SYNCHRONOUS			134217728 words	3			8	MICROELECTRONIC ASSEMBLY					85 Cel		128MX8	128M	-25 Cel					UNSPECIFIED	R-XXMA-X7		3.6 V			20 MHz		Not Qualified		1073741824 bit	2.7 V					NOR TYPE					2.7
HB28J256RM3	Renesas Electronics	FLASH CARD	OTHER	7		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	SERIAL	SYNCHRONOUS			268435456 words	3			8	MICROELECTRONIC ASSEMBLY					85 Cel		256MX8	256M	-25 Cel					UNSPECIFIED	R-XXMA-X7		3.6 V			20 MHz		Not Qualified		2147483648 bit	2.7 V					NOR TYPE					2.7
UPD29F008ALGZ-C12BXLKH	Renesas Electronics	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	2.2/2.7	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel	YES	1MX8	1M	-25 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40				100000 Write/Erase Cycles			Not Qualified	BOTTOM	8388608 bit				e0		NOR TYPE	.000005 Amp			120 ns		YES
UPD29F800ALGZ-B12TXMKH	Renesas Electronics	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	524288 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	YES	512KX16	512K	-20 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48				100000 Write/Erase Cycles			Not Qualified	TOP	8388608 bit				e0		NOR TYPE	.000005 Amp			120 ns		YES
UPD29F032203ALGZ-A85BX-MJH	Renesas Electronics	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	45 mA	2097152 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX16	2M	-25 Cel	8,63	YES		YES	DUAL	R-PDSO-G48							Not Qualified	BOTTOM	33554432 bit						NOR TYPE	.000005 Amp		YES	85 ns		YES
UPD29F800ALGZ-C12BXMJH	Renesas Electronics	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	524288 words		YES	2.2/2.7	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		512KX16	512K	-20 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48				100000 Write/Erase Cycles			Not Qualified	BOTTOM	8388608 bit				e0		NOR TYPE	.000005 Amp			120 ns		YES
UPD29F008ALGZ-B90TXLKH	Renesas Electronics	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel	YES	1MX8	1M	-25 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40				100000 Write/Erase Cycles			Not Qualified	TOP	8388608 bit				e0		NOR TYPE	.000005 Amp			90 ns		YES
UPD29F032203ALGZ-B85BX-MJH	Renesas Electronics	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	45 mA	2097152 words	3	YES	3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX16	2M	-25 Cel	8,63	YES		YES	DUAL	R-PDSO-G48							Not Qualified	BOTTOM	33554432 bit						NOR TYPE	.000005 Amp		YES	85 ns		YES
UPD29F800ALGZ-C15TXMJH	Renesas Electronics	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	524288 words		YES	2.2/2.7	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		512KX16	512K	-20 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48				100000 Write/Erase Cycles			Not Qualified	TOP	8388608 bit				e0		NOR TYPE	.000005 Amp			150 ns		YES
UPD29F008ALGZ-C12TXLJH	Renesas Electronics	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	2.2/2.7	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel		1MX8	1M	-25 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40				100000 Write/Erase Cycles			Not Qualified	TOP	8388608 bit				e0		NOR TYPE	.000005 Amp			120 ns		YES
UPD29F008ALGZ-B12BXLJH	Renesas Electronics	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel		1MX8	1M	-25 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40				100000 Write/Erase Cycles			Not Qualified	BOTTOM	8388608 bit				e0		NOR TYPE	.000005 Amp			120 ns		YES
UPD29F008ALGZ-C15TXLJH	Renesas Electronics	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	2.2/2.7	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel		1MX8	1M	-25 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40				100000 Write/Erase Cycles			Not Qualified	TOP	8388608 bit				e0		NOR TYPE	.000005 Amp			150 ns		YES
UPD29F800ALGX-C12TX	Renesas Electronics	FLASH	OTHER	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	524288 words	2.4	YES	2.2/2.7	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		512KX16	512K	-25 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G44		2.7 V	3 mm	100000 Write/Erase Cycles		13.24 mm	Not Qualified	TOP	8388608 bit	2.2 V			e0		NOR TYPE	.000005 Amp	27.83 mm		120 ns		YES
K8A6515EBC-SE7C0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm			8 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						11 mm		70 ns	1.8
K8F1315ETM-SE1F0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		32MX16	32M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	2	1.95 V	1 mm			9 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1		NOR TYPE		11 mm		110 ns	1.8
K8A6315ETC-SE7B0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm			8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						11 mm		70 ns	1.8
K8S2815EBE-DE7C0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm				Not Qualified	BOTTOM	134217728 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE								70 ns	1.8
K8P3215UQB-DE4AT	Samsung	FLASH	OTHER	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	.8 mm	85 Cel		2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B48	3						Not Qualified	BOTTOM/TOP	33554432 bit			8		260	NOR TYPE	.00003 Amp		YES	55 ns		YES
KFH4G16Q2A-DEB8S	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	45 mA	268435456 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		256MX16	256M	-30 Cel	4K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3						Not Qualified		4294967296 bit			1K	e1	260	SLC NAND TYPE	.0001 Amp			76 ns		NO
K8C5515EBM-FE1C0	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167	3						Not Qualified	BOTTOM	268435456 bit					240	NOR TYPE	.00002 Amp		YES	100 ns		YES
K8S2815EBC-DE7DT	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel		8MX16	8M	-25 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44							Not Qualified	BOTTOM	134217728 bit						NOR TYPE	.00005 Amp		YES	70 ns		YES
KFG1216D2A-DEB50	Samsung	FLASH	OTHER	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	2.65			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-30 Cel					BOTTOM	R-PBGA-B63		2.9 V	1 mm			9.5 mm	Not Qualified		536870912 bit	2.4 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE						12 mm		76 ns	2.7
K8F5615EBM-SE1E0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B44	2	1.95 V	1 mm			8 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1		NOR TYPE	.00002 Amp	9 mm	YES	100 ns	1.8	YES
KFG1216Q2B-SEB6	Samsung	FLASH	OTHER	67	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA67,8X10,32		Flash Memories	.8 mm	85 Cel		32MX16	32M	-30 Cel	512	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B67	1						Not Qualified		536870912 bit			1K	e3		SLC NAND TYPE	.00005 Amp			11 ns		NO
K8A6415EBC-SE7C0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		4MX16	4M	-25 Cel	8,127	YES			BOTTOM	R-PBGA-B88	3	1.95 V	1.1 mm			8 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8		260	NOR TYPE	.00005 Amp	11 mm	YES	70 ns	1.8	YES
K8A6215ETC-HE7E0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm			8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						11 mm		70 ns	1.8
K8C5415ETM-DE1D0	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167							Not Qualified	TOP	268435456 bit						NOR TYPE	.00002 Amp		YES	100 ns		YES
K8C1015ETM-FE1C	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167	3						Not Qualified	TOP	536870912 bit					240	NOR TYPE	.00002 Amp		YES	110 ns		YES
K8C1315ETM-FE1FT	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167	3						Not Qualified	TOP	536870912 bit					240	NOR TYPE	.00002 Amp		YES	110 ns		YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.