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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Page Size (words)	JESD-609 Code	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
THGBMAG9A8JBA4G	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					68719476736 words				8						85 Cel		64GX8	64G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V							549755813888 bit	2.7 V			NAND TYPE					2.7
THGBM7G8T4JBAIR	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					34359738368 words				8						85 Cel		32GX8	32G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V							274877906944 bit	2.7 V			NAND TYPE					2.7
THGBM1G7D8EBAI0	Toshiba	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.5 mm	85 Cel		8GX16	8G	-25 Cel					BOTTOM	R-PBGA-B169	3.6 V	1.4 mm			12 mm	Not Qualified		137438953472 bit	2.7 V			MLC NAND TYPE		18 mm			3.3
THGBM1G5D2EBAI7	Toshiba	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			2147483648 words	3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.5 mm	85 Cel		2GX16	2G	-25 Cel					BOTTOM	R-PBGA-B169	3.6 V	1.3 mm			12 mm	Not Qualified		34359738368 bit	2.7 V			MLC NAND TYPE		16 mm			3.3
THGBM5G7A2JBAIR	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					17179869184 words				8						85 Cel		16GX8	16G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V							137438953472 bit	2.7 V			NAND TYPE					2.7
THGBMHG8C4LBAIR	Toshiba	FLASH	OTHER	169	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			34359738368 words				8	GRID ARRAY					85 Cel		32GX8	32G	-25 Cel					BOTTOM	R-PBGA-B169	3.6 V							274877906944 bit	2.7 V								2.7
THGBM5G7B2JBAIM	Toshiba	FLASH CARD	OTHER	169		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					17179869184 words				8						85 Cel		16GX8	16G	-25 Cel					BOTTOM	R-PBGA-B169	3.6 V							137438953472 bit	2.7 V			NAND TYPE					2.7
THGBM5G9A8JBAIG	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					68719476736 words				8						85 Cel		64GX8	64G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V							549755813888 bit	2.7 V			NAND TYPE					2.7
THGBM5G7A2JBAIM	Toshiba	FLASH CARD	OTHER	169		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					17179869184 words				8						85 Cel		16GX8	16G	-25 Cel					BOTTOM	R-PBGA-B169	3.6 V							137438953472 bit	2.7 V								2.7
THGBM7G9T8JBAIG	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					68719476736 words				8						85 Cel		64GX8	64G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V							549755813888 bit	2.7 V			NAND TYPE					2.7
THGBMHG7C2LBAIL	Toshiba	FLASH	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			17179869184 words				8	GRID ARRAY					85 Cel		16GX8	16G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V							137438953472 bit	2.7 V								2.7
THGBM1G6D4EBAI4	Toshiba	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.5 mm	85 Cel		4GX16	4G	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B169	3.6 V	1.3 mm			12 mm	Not Qualified		68719476736 bit	2.7 V		e1	MLC NAND TYPE		18 mm			3.3
THGBMAG5A1JBAIT	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					4294967296 words				8						85 Cel		4GX8	4G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V							34359738368 bit	2.7 V			NAND TYPE					2.7
THGBMAG9B8JBAIE	Toshiba	FLASH CARD	OTHER	169		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					68719476736 words				8						85 Cel		64GX8	64G	-25 Cel					BOTTOM	R-PBGA-B169	3.6 V							549755813888 bit	2.7 V			NAND TYPE					2.7
THGBM5G8A4JBAIM	Toshiba	FLASH CARD	OTHER	169		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					34359738368 words				8						85 Cel		32GX8	32G	-25 Cel					BOTTOM	R-PBGA-B169	3.6 V							274877906944 bit	2.7 V								2.7
THGBM5G8B4JBAIM	Toshiba	FLASH CARD	OTHER	169		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					34359738368 words				8						85 Cel		32GX8	32G	-25 Cel					BOTTOM	R-PBGA-B169	3.6 V							274877906944 bit	2.7 V			NAND TYPE					2.7
THGBM1G8D8EBAI2	Toshiba	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			32	GRID ARRAY, LOW PROFILE, FINE PITCH				.5 mm	85 Cel		8GX32	8G	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B169	3.6 V	1.4 mm			14 mm	Not Qualified		274877906944 bit	2.7 V		e1	MLC NAND TYPE		18 mm			3.3
TC58512FTI(EL)	Toshiba	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K	30 mA	67108864 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	70 Cel		64MX8	64M	-40 Cel	4K	YES		YES	DUAL	R-PDSO-G48						Not Qualified		536870912 bit		512			.0001 Amp			35 ns		NO
THGBMAG7B2JBAIM	Toshiba	FLASH CARD	OTHER	169		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					17179869184 words				8						85 Cel		16GX8	16G	-25 Cel					BOTTOM	R-PBGA-B169	3.6 V							137438953472 bit	2.7 V			NAND TYPE					2.7
THGBMAG8B4JBAIM	Toshiba	FLASH CARD	OTHER	169		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					34359738368 words				8						85 Cel		32GX8	32G	-25 Cel					BOTTOM	R-PBGA-B169	3.6 V							274877906944 bit	2.7 V			NAND TYPE					2.7
THGBMAG7A2JBAIR	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					17179869184 words				8						85 Cel		16GX8	16G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V							137438953472 bit	2.7 V			NAND TYPE					2.7
THGBMAG8A4JBA4R	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					34359738368 words				8						85 Cel		32GX8	32G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V							274877906944 bit	2.7 V			NAND TYPE					2.7
THGBF7T0L8LBATA	Toshiba	FLASH	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			137438953472 words				8	GRID ARRAY					85 Cel		128GX8	128G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V							1099511627776 bit	2.7 V			MLC NAND TYPE					2.7
THGBM9G9T8KBAIG	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					68719476736 words				8						85 Cel		64GX8	64G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V							549755813888 bit	2.7 V			MLC NAND TYPE					2.7
THGBF7G9L4LBATR	Toshiba	FLASH	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			68719476736 words				8	GRID ARRAY					85 Cel		64GX8	64G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V							549755813888 bit	2.7 V			MLC NAND TYPE					2.7
THGBM1G7D4EBAI2	Toshiba	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			32	GRID ARRAY, LOW PROFILE, FINE PITCH				.5 mm	85 Cel		4GX32	4G	-25 Cel					BOTTOM	R-PBGA-B169	3.6 V	1.4 mm			14 mm	Not Qualified		137438953472 bit	2.7 V			MLC NAND TYPE		18 mm			3.3
THGBM5G5A1JBAIT	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					4294967296 words				8						85 Cel		4GX8	4G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V							34359738368 bit	2.7 V			NAND TYPE					2.7
THGBM9G8T4KBAIR	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					34359738368 words				8						85 Cel		32GX8	32G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V							274877906944 bit	2.7 V			MLC NAND TYPE					2.7
THGBMBG5D1KBAIL	Toshiba	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					4294967296 words				8						85 Cel		4GX8	4G	-25 Cel					BOTTOM	R-PBGA-B153	3.6 V							34359738368 bit	2.7 V			MLC NAND TYPE					2.7
THGBM1G3D1EBAI8	Toshiba	FLASH	OTHER	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			1073741824 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		1GX8	1G	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B153	3.6 V	1.2 mm			11.5 mm	Not Qualified		8589934592 bit	2.7 V		e1	MLC NAND TYPE		13 mm			3.3
THGBM5G9B8JBAIE	Toshiba	FLASH CARD	OTHER	169		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					68719476736 words				8						85 Cel		64GX8	64G	-25 Cel					BOTTOM	R-PBGA-B169	3.6 V							549755813888 bit	2.7 V			NAND TYPE					2.7
THGBM1G4D1EBAI7	Toshiba	FLASH	OTHER	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			1073741824 words	3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.5 mm	85 Cel		1GX16	1G	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B169	3.6 V	1.3 mm			12 mm	Not Qualified		17179869184 bit	2.7 V		e1	MLC NAND TYPE		16 mm			3.3
UPD29F008ALGZ-B90TXLJH	Renesas Electronics	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel		1MX8	1M	-25 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40			100000 Write/Erase Cycles			Not Qualified	TOP	8388608 bit			e0	NOR TYPE	.000005 Amp			90 ns		YES
UPD29F800ALGZ-B12BXMJH	Renesas Electronics	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	524288 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		512KX16	512K	-20 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48			100000 Write/Erase Cycles			Not Qualified	BOTTOM	8388608 bit			e0	NOR TYPE	.000005 Amp			120 ns		YES
UPD29F008ALGZ-B90BXLKH	Renesas Electronics	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel	YES	1MX8	1M	-25 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40			100000 Write/Erase Cycles			Not Qualified	BOTTOM	8388608 bit			e0	NOR TYPE	.000005 Amp			90 ns		YES
UPD29F008ALGZ-C15BXLJH	Renesas Electronics	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	1048576 words		YES	2.2/2.7	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories	.5 mm	85 Cel		1MX8	1M	-25 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40			100000 Write/Erase Cycles			Not Qualified	BOTTOM	8388608 bit			e0	NOR TYPE	.000005 Amp			150 ns		YES
UPD29F032203ALGZ-A85TX-MJH	Renesas Electronics	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	45 mA	2097152 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX16	2M	-25 Cel	8,63	YES		YES	DUAL	R-PDSO-G48						Not Qualified	TOP	33554432 bit				NOR TYPE	.000005 Amp		YES	85 ns		YES
UPD29F800ALGZ-C12TXMKH	Renesas Electronics	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	524288 words		YES	2.2/2.7	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	YES	512KX16	512K	-20 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48			100000 Write/Erase Cycles			Not Qualified	TOP	8388608 bit			e0	NOR TYPE	.000005 Amp			120 ns		YES
UPD29F064115F9-DB80X-CD6	Renesas Electronics	FLASH	OTHER	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.95			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	2.1 V	1.07 mm			8 mm	Not Qualified	BOTTOM/TOP	67108864 bit	1.8 V		e0	NOR TYPE		11 mm		80 ns	1.8
UPD29F064115F9-DB85X-CD6	Renesas Electronics	FLASH	OTHER	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.95			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN LEAD		BOTTOM	R-PBGA-B63	2.1 V	1.07 mm			8 mm	Not Qualified	BOTTOM/TOP	67108864 bit	1.8 V		e0	NOR TYPE		11 mm		85 ns	1.8
HB28J512MM3	Renesas Electronics	FLASH CARD	OTHER	7		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	SERIAL	SYNCHRONOUS			536870912 words	3			8	MICROELECTRONIC ASSEMBLY					85 Cel		512MX8	512M	-25 Cel					UNSPECIFIED	R-XXMA-X7	3.6 V			20 MHz		Not Qualified		4294967296 bit	2.7 V			NOR TYPE					2.7
UPD29F064115F9-EB90X-CD5	Renesas Electronics	FLASH	OTHER	85	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel		4MX16	4M	-25 Cel			TIN LEAD		BOTTOM	R-PBGA-B85	1.95 V	1.21 mm			8 mm	Not Qualified	BOTTOM/TOP	67108864 bit	1.65 V		e0	NOR TYPE		11 mm		90 ns	1.8
UPD29F800ALGZ-B90TXMKH	Renesas Electronics	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	524288 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	YES	512KX16	512K	-20 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48			100000 Write/Erase Cycles			Not Qualified	TOP	8388608 bit			e0	NOR TYPE	.000005 Amp			90 ns		YES
UPD29F800ALGZ-C12TXMJH	Renesas Electronics	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	30 mA	524288 words		YES	2.2/2.7	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		512KX16	512K	-20 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48			100000 Write/Erase Cycles			Not Qualified	TOP	8388608 bit			e0	NOR TYPE	.000005 Amp			120 ns		YES
UPD29F800ALGX-B90BX	Renesas Electronics	FLASH	OTHER	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		512KX16	512K	-25 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G44	3.6 V	3 mm	100000 Write/Erase Cycles		13.24 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V		e0	NOR TYPE	.000005 Amp	27.83 mm		90 ns		YES
UPD29F800ALGX-B90TX	Renesas Electronics	FLASH	OTHER	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		512KX16	512K	-25 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G44	3.6 V	3 mm	100000 Write/Erase Cycles		13.24 mm	Not Qualified	TOP	8388608 bit	2.7 V		e0	NOR TYPE	.000005 Amp	27.83 mm		90 ns		YES
UPD29F800ALGX-B12BX	Renesas Electronics	FLASH	OTHER	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		512KX16	512K	-25 Cel	1,2,1,15	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G44	3.6 V	3 mm	100000 Write/Erase Cycles		13.24 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V		e0	NOR TYPE	.000005 Amp	27.83 mm		120 ns		YES
UPD29F032203ALGZ-B85TX-MJH	Renesas Electronics	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	45 mA	2097152 words	3	YES	3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX16	2M	-25 Cel	8,63	YES		YES	DUAL	R-PDSO-G48						Not Qualified	TOP	33554432 bit				NOR TYPE	.000005 Amp		YES	85 ns		YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.