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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S71WS512RE0HH32S2	Infineon Technologies	FLASH	OTHER	84	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8	FLASH+PSRAM		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel	32MX16	32M	-30 Cel					BOTTOM	R-PBGA-B84		1.95 V	1.2 mm	8 mm	Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK							11.6 mm		80 ns	1.8
S29PL032J70BFW123	Infineon Technologies	FLASH	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	2097152 words	3		YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	Flash Memories	.8 mm	85 Cel	2MX16	2M	-25 Cel	16,62	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3	3.6 V	1 mm	6.15 mm	Not Qualified	BOTTOM/TOP	33554432 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	70 ns	3	YES
S29PL032J70BFW13	Infineon Technologies	FLASH	OTHER	56	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3				16	GRID ARRAY			.8 mm	85 Cel	2MX16	2M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B56		3.6 V	1 mm	7.95 mm	Not Qualified	BOTTOM/TOP	33554432 bit	2.7 V			e1			NOR TYPE		8.95 mm		70 ns	3
S29PL032J60BFW12	Infineon Technologies	FLASH	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	2097152 words	3		YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	Flash Memories	.8 mm	85 Cel	2MX16	2M	-25 Cel	16,62	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3	3.6 V	1 mm	6.15 mm	Not Qualified	BOTTOM/TOP	33554432 bit	2.7 V		8	e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	60 ns	3	YES
S29PL127J70BFW12	Infineon Technologies	FLASH	OTHER	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8388608 words	3				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel					BOTTOM	R-PBGA-B80		3.6 V	1 mm	8 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK					NOR TYPE		11 mm		70 ns	3
S29PL127J80TFW142	Infineon Technologies	FLASH	OTHER	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3				16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel					DUAL	R-PDSO-G56		3.6 V	1.2 mm	14 mm		BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		80 ns	3
S29PL127J65BFW10	Infineon Technologies	FLASH	OTHER	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8388608 words	3				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel					BOTTOM	R-PBGA-B80		3.6 V	1 mm	8 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK					NOR TYPE		11 mm		65 ns	3
S29PL127J60TFW133	Infineon Technologies	FLASH	OTHER	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	Flash Memories	.5 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	14 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	60 ns	3	YES
S29PL064J55BFW150	Infineon Technologies	FLASH	OTHER	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	3		YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	Flash Memories	.8 mm	85 Cel	4MX16	4M	-25 Cel	16,126	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B56	3	3.6 V	1 mm	7 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	9 mm	YES	55 ns	3	YES
S29PL127N70GFW003	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3	3.1 V	1 mm	8 mm	Not Qualified		134217728 bit	2.7 V			e1			NOR TYPE		11.6 mm		70 ns	3
S29PL032J65BFW121	Infineon Technologies	FLASH	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48	3	3.6 V	1 mm	6.15 mm	Not Qualified	BOTTOM/TOP	33554432 bit	2.7 V			e1			NOR TYPE		8.15 mm		65 ns	3
S29PL127J70BFW022	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3		YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1 mm	8 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V		8	e1	40	260	NOR TYPE	.000005 Amp	11.6 mm	YES	70 ns	3	YES
S29PL127J70BFW132	Infineon Technologies	FLASH	OTHER	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	BGA80,8X12,32	Flash Memories	.5 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	14 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
S29PL127J70TFW011	Infineon Technologies	FLASH	OTHER	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		4K,32K	70 mA	8388608 words			YES	1.8,3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	Flash Memories	.5 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	TIN SILVER COPPER	YES	DUAL	R-PDSO-G56	3				Not Qualified	BOTTOM/TOP	134217728 bit			8	e1	40	260	NOR TYPE	.000005 Amp		YES	70 ns	3	YES
S29PL127J55BFW02	Infineon Technologies	FLASH	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	8388608 words			YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA64,10X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64					Not Qualified	BOTTOM/TOP	134217728 bit			8				NOR TYPE	.000005 Amp		YES	55 ns		YES
S71WS256PC0HH3YR2	Infineon Technologies	FLASH	OTHER	84	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8	FLASH+PSRAM		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1.2 mm	8 mm	Not Qualified		268435456 bit	1.7 V								11.6 mm		80 ns	1.8
S71WS256PC0HH3YL2	Infineon Technologies	FLASH	OTHER	84	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8	FLASH+PSRAM		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1.2 mm	8 mm	Not Qualified		268435456 bit	1.7 V								11.6 mm		80 ns	1.8
S71WS512RE0HH32A3	Infineon Technologies	FLASH	OTHER	84	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8	FLASH+PSRAM		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel	32MX16	32M	-30 Cel					BOTTOM	R-PBGA-B84		1.95 V	1.2 mm	8 mm	Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK							11.6 mm		80 ns	1.8
S29PL127J70TFW130	Infineon Technologies	FLASH	OTHER	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	Flash Memories	.5 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	14 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
S29PL127J65TFW131	Infineon Technologies	FLASH	OTHER	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	Flash Memories	.5 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	14 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	65 ns	3	YES
S29PL064J55BFW120	Infineon Technologies	FLASH	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	3		YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	Flash Memories	.8 mm	85 Cel	4MX16	4M	-25 Cel	16,126	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3	3.6 V	1 mm	6.15 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	55 ns	3	YES
S29PL127J60BFW011	Infineon Technologies	FLASH	OTHER	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3		YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA80,8X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1 mm	8 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V		8	e1	40	260	NOR TYPE	.000005 Amp	11 mm	YES	60 ns	3	YES
S29PL032J55BFW153	Infineon Technologies	FLASH	OTHER	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	2097152 words	3		YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	Flash Memories	.8 mm	85 Cel	2MX16	2M	-25 Cel	16,62	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B56	3	3.6 V	1 mm	7 mm	Not Qualified	BOTTOM/TOP	33554432 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	9 mm	YES	55 ns	3	YES
S29PL127J60BFW03	Infineon Technologies	FLASH	OTHER	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8388608 words	3				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel					BOTTOM	R-PBGA-B80		3.6 V	1 mm	8 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK					NOR TYPE		11 mm		60 ns	3
S29PL127J60BFW010	Infineon Technologies	FLASH	OTHER	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3		YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA80,8X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1 mm	8 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V		8	e1	40	260	NOR TYPE	.000005 Amp	11 mm	YES	60 ns	3	YES
S29PL129N70GFW000	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3	3.1 V	1 mm	8 mm	Not Qualified		134217728 bit	2.7 V			e1			NOR TYPE		11.6 mm		70 ns	3
S29PL127J65BFW132	Infineon Technologies	FLASH	OTHER	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	BGA80,8X12,32	Flash Memories	.5 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	14 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	65 ns	3	YES
S29PL032J70BFW151	Infineon Technologies	FLASH	OTHER	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	2097152 words	3		YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	Flash Memories	.8 mm	85 Cel	2MX16	2M	-25 Cel	16,62	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B56	3	3.6 V	1 mm	7 mm	Not Qualified	BOTTOM/TOP	33554432 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	9 mm	YES	70 ns	3	YES
S29PL032J65BFW153	Infineon Technologies	FLASH	OTHER	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B56	3	3.6 V	1 mm	7 mm	Not Qualified	BOTTOM/TOP	33554432 bit	2.7 V			e1			NOR TYPE		9 mm		65 ns	3
S29PL64J55BFW12	Infineon Technologies	FLASH	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			4194304 words	3				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B48		3.6 V	1 mm	6.15 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V						NOR TYPE		8.15 mm		55 ns	3
S29PL256N65GAW002	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel			TIN LEAD		BOTTOM	R-PBGA-B84	3	3.1 V	1 mm	8 mm	Not Qualified		268435456 bit	2.7 V			e0			NOR TYPE		11.6 mm		65 ns	3
S29PL127J60TFW000	Infineon Technologies	FLASH	OTHER	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3		YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	TSSOP56,.8,20	Flash Memories	.8 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1 mm	8 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	11 mm	YES	60 ns	3	YES
S29PL64J60BFW12	Infineon Technologies	FLASH	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			4194304 words	3				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B48		3.6 V	1 mm	6.15 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V						NOR TYPE		8.15 mm		60 ns	3
S29PL127J60TFW132	Infineon Technologies	FLASH	OTHER	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	Flash Memories	.5 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	14 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	60 ns	3	YES
S71WS512RE0HH32S0	Infineon Technologies	FLASH	OTHER	84	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8	FLASH+PSRAM		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel	32MX16	32M	-30 Cel					BOTTOM	R-PBGA-B84		1.95 V	1.2 mm	8 mm	Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK							11.6 mm		80 ns	1.8
S71WS256PC0HH3YL0	Infineon Technologies	FLASH	OTHER	84	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8	FLASH+PSRAM		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B84		1.95 V	1.2 mm	8 mm	Not Qualified		268435456 bit	1.7 V								11.6 mm		80 ns	1.8
S29PL032J70BFW120	Infineon Technologies	FLASH	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	2097152 words	3		YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	Flash Memories	.8 mm	85 Cel	2MX16	2M	-25 Cel	16,62	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3	3.6 V	1 mm	6.15 mm	Not Qualified	BOTTOM/TOP	33554432 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	70 ns	3	YES
S29PL127N65GFW002	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3	3.1 V	1 mm	8 mm	Not Qualified		134217728 bit	2.7 V			e1			NOR TYPE		11.6 mm		65 ns	3
S29PL129N70GAW002	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel			TIN LEAD		BOTTOM	R-PBGA-B64	3	3.1 V	1 mm	8 mm	Not Qualified		134217728 bit	2.7 V			e0			NOR TYPE		11.6 mm		70 ns	3
S29PL32J60BFW15	Infineon Technologies	FLASH	OTHER	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			2097152 words	3				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-25 Cel					BOTTOM	R-PBGA-B56		3.6 V	1 mm	7 mm	Not Qualified	BOTTOM/TOP	33554432 bit	2.7 V						NOR TYPE		9 mm		60 ns	3
S29PL129N65GFW000	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3	3.1 V	1 mm	8 mm	Not Qualified		134217728 bit	2.7 V			e1			NOR TYPE		11.6 mm		65 ns	3
S29PL127J70TFW131	Infineon Technologies	FLASH	OTHER	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	Flash Memories	.5 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	14 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	YES
S29PL32J70BFW12	Infineon Technologies	FLASH	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			2097152 words	3				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-25 Cel					BOTTOM	R-PBGA-B48		3.6 V	1 mm	6.15 mm	Not Qualified	BOTTOM/TOP	33554432 bit	2.7 V						NOR TYPE		8.15 mm		70 ns	3
S71WS512RE0HH32S3	Infineon Technologies	FLASH	OTHER	84	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8	FLASH+PSRAM		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel	32MX16	32M	-30 Cel					BOTTOM	R-PBGA-B84		1.95 V	1.2 mm	8 mm	Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK							11.6 mm		80 ns	1.8
S29PL127N70GAW002	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel			TIN LEAD		BOTTOM	R-PBGA-B64	3	3.1 V	1 mm	8 mm	Not Qualified		134217728 bit	2.7 V			e0			NOR TYPE		11.6 mm		70 ns	3
S29PL32J60BAW12	Infineon Technologies	FLASH	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			2097152 words	3				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-25 Cel					BOTTOM	R-PBGA-B48		3.6 V	1 mm	6.15 mm	Not Qualified	BOTTOM/TOP	33554432 bit	2.7 V						NOR TYPE		8.15 mm		60 ns	3
S29PL127J70BFW13	Infineon Technologies	FLASH	OTHER	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8388608 words	3				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel					BOTTOM	R-PBGA-B80		3.6 V	1 mm	8 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK					NOR TYPE		11 mm		70 ns	3
S29PL127J70BFW021	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3		YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1 mm	8 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V		8	e1	40	260	NOR TYPE	.000005 Amp	11.6 mm	YES	70 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.