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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29PL127J80BFW012	Infineon Technologies	FLASH	OTHER	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	1.8		YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA80,8X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B80		1.95 V	1 mm	8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	1.65 V	TOP AND BOTTOM BOOT BLOCK	8				NOR TYPE	.000005 Amp	11 mm	YES	80 ns	3	YES
S29PL127N70GFW000	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	3	3.1 V	1 mm	8 mm	Not Qualified			134217728 bit	2.7 V			e1			NOR TYPE		11.6 mm		70 ns	3
S29PL127J70BFW003	Infineon Technologies	FLASH	OTHER	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3		YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA80,8X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1 mm	8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	11 mm	YES	70 ns	3	YES
S29PL127J70BFW001	Infineon Technologies	FLASH	OTHER	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3		YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA80,8X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1 mm	8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	11 mm	YES	70 ns	3	YES
S29PL256N70GFW002	Infineon Technologies	FLASH	OTHER	84	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B84	3	3.1 V	1 mm	8 mm	Not Qualified			268435456 bit	2.7 V			e1			NOR TYPE		11.6 mm		70 ns	3
S29PL127J70TFW010	Infineon Technologies	FLASH	OTHER	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		4K,32K	70 mA	8388608 words			YES	1.8,3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	Flash Memories	.5 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	TIN SILVER COPPER	YES	DUAL	R-PDSO-G56	3				Not Qualified		BOTTOM/TOP	134217728 bit			8	e1	40	260	NOR TYPE	.000005 Amp		YES	70 ns	3	YES
S29PL127J65TFW133	Infineon Technologies	FLASH	OTHER	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	Flash Memories	.5 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	14 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	65 ns	3	YES
S29PL127J60TFW001	Infineon Technologies	FLASH	OTHER	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3		YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	TSSOP56,.8,20	Flash Memories	.8 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1 mm	8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	11 mm	YES	60 ns	3	YES
S29PL032J60BFW15	Infineon Technologies	FLASH	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	2097152 words	3		YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Flash Memories	.8 mm	85 Cel	2MX16	2M	-25 Cel	16,62	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B56	3	3.6 V	1.2 mm	7 mm	Not Qualified		BOTTOM/TOP	33554432 bit	2.7 V		8	e1	40	260	NOR TYPE	.000005 Amp	9 mm	YES	60 ns	3	YES
S29PL64J60BFW15	Infineon Technologies	FLASH	OTHER	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			4194304 words	3				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B56		3.6 V	1 mm	7 mm	Not Qualified		BOTTOM/TOP	67108864 bit	2.7 V						NOR TYPE		9 mm		60 ns	3
S29PL032J70BFW12	Infineon Technologies	FLASH	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	2097152 words	3		YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	Flash Memories	.8 mm	85 Cel	2MX16	2M	-25 Cel	16,62	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3	3.6 V	1 mm	6.15 mm	Not Qualified		BOTTOM/TOP	33554432 bit	2.7 V		8	e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	70 ns	3	YES
S29PL127J70BFW002	Infineon Technologies	FLASH	OTHER	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3		YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA80,8X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1 mm	8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	11 mm	YES	70 ns	3	YES
S29PL127J60BFW13	Infineon Technologies	FLASH	OTHER	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8388608 words	3				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel					BOTTOM	R-PBGA-B80		3.6 V	1 mm	8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK					NOR TYPE		11 mm		60 ns	3
S29PL127J60BFW132	Infineon Technologies	FLASH	OTHER	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	8388608 words	3		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	BGA80,8X12,32	Flash Memories	.5 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	14 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	60 ns	3	YES
S29PL127J70BFW00	Infineon Technologies	FLASH	OTHER	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	8388608 words	3		YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA80,8X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1 mm	8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	11 mm	YES	70 ns	3	YES
S29PL032J60BFW121	Infineon Technologies	FLASH	OTHER	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	2097152 words	3		YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	Flash Memories	.8 mm	85 Cel	2MX16	2M	-25 Cel	16,62	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3	3.6 V	1 mm	6.15 mm	Not Qualified		BOTTOM/TOP	33554432 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	60 ns	3	YES
S29PL127N70GAW000	Infineon Technologies	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3				16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel			TIN LEAD		BOTTOM	R-PBGA-B64	3	3.1 V	1 mm	8 mm	Not Qualified			134217728 bit	2.7 V			e0			NOR TYPE		11.6 mm		70 ns	3
S29PL127J65BFW01	Infineon Technologies	FLASH	OTHER	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	8388608 words	3		YES	1.8,3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA80,8X12,32	Flash Memories	.8 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	YES	BOTTOM	R-PBGA-B80	3	3.6 V	1 mm	8 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK	8	e1	40	260	NOR TYPE	.000005 Amp	11 mm	YES	65 ns	3	YES
S71WS512RE0HH30T3	Infineon Technologies	FLASH	OTHER	84	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			33554432 words	1.8	FLASH+PSRAM		1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel	32MX16	32M	-30 Cel					BOTTOM	R-PBGA-B84		1.95 V	1.2 mm	8 mm	Not Qualified			536870912 bit	1.7 V								11.6 mm		80 ns	1.8
THN-M203K0320EA(TU	Toshiba	FLASH CARD	OTHER			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD					34359738368 words					8					85 Cel	32GX8	32G	-25 Cel					UPPER	R-XUUC-N			1 mm	11 mm				274877906944 bit							NOR TYPE		15 mm
THN-M203K0320EB(TU	Toshiba	FLASH CARD	OTHER			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD					34359738368 words					8					85 Cel	32GX8	32G	-25 Cel					UPPER	R-XUUC-N			1 mm	11 mm				274877906944 bit							NOR TYPE		15 mm
THN-M203K0320EC(TU	Toshiba	FLASH CARD	OTHER			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD					34359738368 words					8					85 Cel	32GX8	32G	-25 Cel					UPPER	R-XUUC-N			1 mm	11 mm				274877906944 bit							NOR TYPE		15 mm
THNSR032GBA5KC	Toshiba	FLASH CARD	OTHER			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD					34359738368 words					8					85 Cel	32GX8	32G	-30 Cel					UNSPECIFIED	R-XUUC-N		3.6 V						274877906944 bit	2.7 V						NAND TYPE
THN-M203K2560EB(TU	Toshiba	FLASH CARD	OTHER			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD					274877906944 words					8					85 Cel	256GX8	256G	-25 Cel					UPPER	R-XUUC-N			1 mm	11 mm				2199023255552 bit							NOR TYPE		15 mm
THN-M203K0160EB(TU	Toshiba	FLASH CARD	OTHER			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD					17179869184 words					8					85 Cel	16GX8	16G	-25 Cel					UPPER	R-XUUC-N			1 mm	11 mm				137438953472 bit							NOR TYPE		15 mm
THN-M203K1280EC(TU	Toshiba	FLASH CARD	OTHER			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD					137438953472 words					8					85 Cel	128GX8	128G	-25 Cel					UPPER	R-XUUC-N			1 mm	11 mm				1099511627776 bit							NOR TYPE		15 mm
THN-M203K1280E4	Toshiba	FLASH CARD	OTHER			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD					137438953472 words					8					85 Cel	128GX8	128G	-25 Cel					UPPER	R-XUUC-N			1 mm	11 mm				1099511627776 bit							NOR TYPE		15 mm
THN-M203K1280EB(TU	Toshiba	FLASH CARD	OTHER			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD					137438953472 words					8					85 Cel	128GX8	128G	-25 Cel					UPPER	R-XUUC-N			1 mm	11 mm				1099511627776 bit							NOR TYPE		15 mm
THN-M203K1280EA(TU	Toshiba	FLASH CARD	OTHER			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD					137438953472 words					8					85 Cel	128GX8	128G	-25 Cel					UPPER	R-XUUC-N			1 mm	11 mm				1099511627776 bit							NOR TYPE		15 mm
THN-M203K0160E4	Toshiba	FLASH CARD	OTHER			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD					17179869184 words					8					85 Cel	16GX8	16G	-25 Cel					UPPER	R-XUUC-N			1 mm	11 mm				137438953472 bit							NOR TYPE		15 mm
THNSR016GBB5KF	Toshiba	FLASH CARD	OTHER			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD					17179869184 words					8					85 Cel	16GX8	16G	-30 Cel					UNSPECIFIED	R-XUUC-N		3.6 V						137438953472 bit	2.7 V						NAND TYPE
THN-M203K0160EA(TU	Toshiba	FLASH CARD	OTHER			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD					17179869184 words					8					85 Cel	16GX8	16G	-25 Cel					UPPER	R-XUUC-N			1 mm	11 mm				137438953472 bit							NOR TYPE		15 mm
THNSR008GBB5KE	Toshiba	FLASH CARD	OTHER			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD					8589934592 words					8					85 Cel	8GX8	8G	-30 Cel					UNSPECIFIED	R-XUUC-N		3.6 V						68719476736 bit	2.7 V						NAND TYPE
THN-M203K0160EC(TU	Toshiba	FLASH CARD	OTHER			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD					17179869184 words					8					85 Cel	16GX8	16G	-25 Cel					UPPER	R-XUUC-N			1 mm	11 mm				137438953472 bit							NOR TYPE		15 mm
THN-M203K0320E4	Toshiba	FLASH CARD	OTHER			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD					34359738368 words					8					85 Cel	32GX8	32G	-25 Cel					UPPER	R-XUUC-N			1 mm	11 mm				274877906944 bit							NOR TYPE		15 mm
THN-M203K2560EC(TU	Toshiba	FLASH CARD	OTHER			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD					274877906944 words					8					85 Cel	256GX8	256G	-25 Cel					UPPER	R-XUUC-N			1 mm	11 mm				2199023255552 bit							NOR TYPE		15 mm
THN-M203K2560E4	Toshiba	FLASH CARD	OTHER			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD					274877906944 words					8					85 Cel	256GX8	256G	-25 Cel					UPPER	R-XUUC-N			1 mm	11 mm				2199023255552 bit							NOR TYPE		15 mm
THNSR008GBA5KA	Toshiba	FLASH CARD	OTHER			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD					8589934592 words					8					85 Cel	8GX8	8G	-30 Cel					UNSPECIFIED	R-XUUC-N		3.6 V						68719476736 bit	2.7 V						NAND TYPE
THNSR032GBB5KG	Toshiba	FLASH CARD	OTHER			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD					34359738368 words					8					85 Cel	32GX8	32G	-30 Cel					UNSPECIFIED	R-XUUC-N		3.6 V						274877906944 bit	2.7 V						NAND TYPE
THNSR016GBA5KB	Toshiba	FLASH CARD	OTHER			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD					17179869184 words					8					85 Cel	16GX8	16G	-30 Cel					UNSPECIFIED	R-XUUC-N		3.6 V						137438953472 bit	2.7 V						NAND TYPE
THN-M203K0640EA(TU	Toshiba	FLASH CARD	OTHER			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD					68719476736 words					8					85 Cel	64GX8	64G	-25 Cel					UPPER	R-XUUC-N			1 mm	11 mm				549755813888 bit							NOR TYPE		15 mm
THN-M203K0640EC(TU	Toshiba	FLASH CARD	OTHER			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD					68719476736 words					8					85 Cel	64GX8	64G	-25 Cel					UPPER	R-XUUC-N			1 mm	11 mm				549755813888 bit							NOR TYPE		15 mm
THNSW016GAA-C	Toshiba	FLASH CARD	OTHER	9	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			17179869184 words	3.3				8	UNCASED CHIP				85 Cel	16GX8	16G	-25 Cel					UPPER	R-XUUC-N9		3.6 V	2.25 mm	24 mm		25 ms		137438953472 bit	2.7 V								32 mm			3.3
THNSW032GAA-C	Toshiba	FLASH CARD	OTHER	9	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			34359738368 words	3.3				8	UNCASED CHIP				85 Cel	32GX8	32G	-25 Cel					UPPER	R-XUUC-N9		3.6 V	2.25 mm	24 mm		25 ms		274877906944 bit	2.7 V								32 mm			3.3
THN-M203K0640E4	Toshiba	FLASH CARD	OTHER			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD					68719476736 words					8					85 Cel	64GX8	64G	-25 Cel					UPPER	R-XUUC-N			1 mm	11 mm				549755813888 bit							NOR TYPE		15 mm
THN-M203K0640EB(TU	Toshiba	FLASH CARD	OTHER			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD					68719476736 words					8					85 Cel	64GX8	64G	-25 Cel					UPPER	R-XUUC-N			1 mm	11 mm				549755813888 bit							NOR TYPE		15 mm
THNSW008GAA-C	Toshiba	FLASH CARD	OTHER	9	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS			8589934592 words	3.3				8	UNCASED CHIP				85 Cel	8GX8	8G	-25 Cel					UPPER	R-XUUC-N9		3.6 V	2.25 mm	24 mm		25 ms		68719476736 bit	2.7 V								32 mm			3.3
THN-M203K2560EA(TU	Toshiba	FLASH CARD	OTHER			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD					274877906944 words					8					85 Cel	256GX8	256G	-25 Cel					UPPER	R-XUUC-N			1 mm	11 mm				2199023255552 bit							NOR TYPE		15 mm

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.