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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K8S2615EBE-SE7C0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm				Not Qualified	BOTTOM	134217728 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K8S3215ETE-SE7C	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20	Flash Memories	.5 mm	85 Cel		2MX16	2M	-25 Cel	8,63	YES	TIN SILVER COPPER NICKEL	YES	BOTTOM		R-PBGA-B44	3						Not Qualified	TOP	33554432 bit				e2		260	NOR TYPE	.00005 Amp		YES	80 ns		YES
K8F5615ETM-FE1E	Samsung	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM		R-PBGA-B88							Not Qualified	TOP	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8S5515EZC-SE1C0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified	BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		7.7 mm		100 ns	1.8
KFN2G16Q2M-DEB6T	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	134217728 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel		128MX16	128M	-30 Cel	2K	YES	MATTE TIN	YES	BOTTOM		R-PBGA-B63	1						Not Qualified		2147483648 bit			1K	e3			SLC NAND TYPE	.00005 Amp			76 ns		NO
K8F5615EBM-FE1F0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B88		1.95 V	1.2 mm			8 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0			NOR TYPE	.00002 Amp	11 mm	YES	100 ns	1.8	YES
KFG1G16Q2M-DEB6	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel		64MX16	64M	-30 Cel	1K	YES	MATTE TIN	YES	BOTTOM		R-PBGA-B63	1						Not Qualified		1073741824 bit			1K	e3			SLC NAND TYPE	.00005 Amp			11.5 ns		NO
K8C1115ETM-FE1D0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM		R-PBGA-B167		1.95 V	1.4 mm			10.5 mm		TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							14 mm		110 ns	1.8
K8P2815UQC-GE4B0	Samsung	FLASH	OTHER	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA80,8X12,32	Flash Memories	.8 mm	85 Cel		8MX16	8M	-25 Cel	16,254	YES		YES	BOTTOM		R-PBGA-B80		3.6 V	1 mm			8 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	BOTTOM BOOT BLOCK, TOP BOOT BLOCK	8			260	NOR TYPE	.00003 Amp	11 mm	YES	65 ns	3	YES
K8S6815ETD-HE7E0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm					TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K8S1015ETC-DE1F0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM		R-PBGA-B64		1.95 V	1 mm				Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE				100 ns	1.8
K8S3215ETF-FE7DT	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20	Flash Memories	.5 mm	85 Cel	3-STATE	2MX16	2M	-25 Cel	8,63	YES		YES	BOTTOM		R-PBGA-B44		1.95 V	1 mm	100000 Write/Erase Cycles		5 mm	Not Qualified	TOP	33554432 bit	1.7 V						NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
KFH1G16Q2M-DEB	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	15 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel		64MX16	64M	-30 Cel	1K	YES		YES	BOTTOM		R-PBGA-B63							Not Qualified		1073741824 bit			1K				MLC NAND TYPE	.00005 Amp			14.5 ns		NO
K8S6815EBD-DE7E0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm					BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
KFG2G16Q2A-DEB8T	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	35 mA	134217728 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel		128MX16	128M	-30 Cel	2K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63	3						Not Qualified		2147483648 bit			1K	e1		260	MLC NAND TYPE	.00005 Amp			76 ns		NO
K8F5715EBM-DE1ET	Samsung	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM		R-PBGA-B88							Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8P1615UQB-DE4D0	Samsung	FLASH	OTHER	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	1048576 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	Flash Memories	.8 mm	85 Cel		1MX16	1M	-25 Cel	16,30	YES		YES	BOTTOM		R-PBGA-B48							Not Qualified	BOTTOM/TOP	16777216 bit			8				NOR TYPE	.00003 Amp		YES	70 ns		YES
K8F5615EBM-DE1E	Samsung	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM		R-PBGA-B88							Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8S3215ETF-SE7ET	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20	Flash Memories	.5 mm	85 Cel	3-STATE	2MX16	2M	-25 Cel	8,63	YES		YES	BOTTOM		R-PBGA-B44	3	1.95 V	1 mm	100000 Write/Erase Cycles		5 mm	Not Qualified	TOP	33554432 bit	1.7 V					260	NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
KFKAGH6Q4M-DEB8	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		256K	40 mA	1073741824 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel		1GX16	1G	-30 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63							Not Qualified		17179869184 bit			2K				MLC NAND TYPE	.0001 Amp			76 ns		NO
K8C1215EBM-DE1E0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		32MX16	32M	-25 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B167	2	1.95 V	1.4 mm			10.5 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1			NOR TYPE		14 mm		110 ns	1.8
KFG2816Q1M-PED00	Samsung	FLASH	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			8388608 words	1.8			16	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		8MX16	8M	-30 Cel					DUAL		R-PDSO-G48		1.95 V	1.2 mm			12 mm	Not Qualified		134217728 bit	1.7 V								18.4 mm		76 ns	1.8
K8S1015EBC-DE1F0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM		R-PBGA-B64		1.95 V	1 mm					BOTTOM	536870912 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE				100 ns	1.8
KFG5616D1M-DEB00	Samsung	FLASH	OTHER	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	2.65			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-30 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63	2	2.9 V	1 mm			9.5 mm	Not Qualified		268435456 bit	2.4 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE		e1			MLC NAND TYPE		12 mm		76 ns	2.7
K8S1215ETC-FE1F0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM		R-PBGA-B64		1.95 V	1 mm					TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE				100 ns	1.8
K8S3215ETF-HE7CT	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20	Flash Memories	.5 mm	85 Cel	3-STATE	2MX16	2M	-25 Cel	8,63	YES	TIN SILVER COPPER NICKEL	YES	BOTTOM		R-PBGA-B44	3	1.95 V	1 mm	100000 Write/Erase Cycles		5 mm	Not Qualified	TOP	33554432 bit	1.7 V			e2		260	NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
KFW4G16Q2M-DEB6	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	268435456 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel		256MX16	256M	-30 Cel	4K	YES	MATTE TIN	YES	BOTTOM		R-PBGA-B63	1						Not Qualified		4294967296 bit			1K	e3			SLC NAND TYPE	.00018 Amp			11.5 ns		NO
K8S2815ETC-SE7E0	Samsung	FLASH	OTHER	44	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS	4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY	BGA44,8X14,20	Flash Memories	.5 mm	85 Cel		8MX16	8M	-25 Cel	8, 255	YES		YES	BOTTOM		R-PBGA-B44	3	1.95 V					Not Qualified	TOP	134217728 bit	1.7 V					260	NOR TYPE	.00005 Amp		YES	70 ns	1.8	YES
K8S3215ETF-SE7D0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20	Flash Memories	.5 mm	85 Cel	3-STATE	2MX16	2M	-25 Cel	8,63	YES		YES	BOTTOM		R-PBGA-B44	3	1.95 V	1 mm	100000 Write/Erase Cycles		5 mm	Not Qualified	TOP	33554432 bit	1.7 V					260	NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K8S3215EBF-FE7C0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20	Flash Memories	.5 mm	85 Cel	3-STATE	2MX16	2M	-25 Cel	8,63	YES		YES	BOTTOM		R-PBGA-B44	1	1.95 V	1 mm	100000 Write/Erase Cycles		5 mm	Not Qualified	BOTTOM	33554432 bit	1.7 V						NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K8S1315EZC-DE1E0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X14,20	Flash Memories	.5 mm	85 Cel		32MX16	32M	-25 Cel	512	YES			BOTTOM		R-PBGA-B64		1.95 V	1 mm				Not Qualified		536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp		YES	100 ns	1.8	YES
KFG2G16Q2M-DEB6	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	134217728 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel		128MX16	128M	-30 Cel	2K	YES	MATTE TIN	YES	BOTTOM		R-PBGA-B63	1						Not Qualified		2147483648 bit			1K	e3			SLC NAND TYPE	.00005 Amp			76 ns		NO
K8C1015ETM-DE1CT	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM		R-PBGA-B167							Not Qualified	TOP	536870912 bit							NOR TYPE	.00002 Amp		YES	110 ns		YES
K8S5615EBA-FE7CT	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20	Flash Memories	.5 mm	85 Cel		16MX16	16M	-25 Cel	8, 511	YES			BOTTOM		R-PBGA-B44							Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00007 Amp		YES	70 ns		YES
K8F5715ETM-SE1D0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20	Flash Memories	.5 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B44	2	1.95 V	1 mm			8 mm	Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE	.00002 Amp	9 mm	YES	100 ns	1.8	YES
K8A6215EBC-DE7D0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM		R-PBGA-B88		1.95 V	1.1 mm			8 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11 mm		70 ns	1.8
K8S2615ETC-FE7E0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		70 mA	8388608 words	1.8	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				85 Cel	3-STATE	8MX16	8M	-25 Cel		NO		YES	BOTTOM	HARDWARE	R-PBGA-B44		1.95 V		100000 Write/Erase Cycles	108 MHz			TOP	134217728 bit	1.7 V						NOR TYPE	.00005 Amp		YES	70 ns	1.8	YES
KFN2G16Q2M-DEB5T	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	134217728 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel		128MX16	128M	-30 Cel	2K	YES	MATTE TIN	YES	BOTTOM		R-PBGA-B63	1						Not Qualified		2147483648 bit			1K	e3			SLC NAND TYPE	.00005 Amp			76 ns		NO
K8S6615EBD-SE7C0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm					BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K8C5415EBM-DE1D0	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM		R-PBGA-B167							Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8S5515EZC-FE1C0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified	BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		7.7 mm		100 ns	1.8
K8S2815ETC-SE7E	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20	Flash Memories	.5 mm	85 Cel		8MX16	8M	-25 Cel	8, 255	YES		YES	BOTTOM		R-PBGA-B44							Not Qualified	TOP	134217728 bit							NOR TYPE	.00005 Amp		YES	70 ns		YES
K8S6615ETD-FE7D0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm				Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K8S3215ETF-SE7E0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20	Flash Memories	.5 mm	85 Cel	3-STATE	2MX16	2M	-25 Cel	8,63	YES		YES	BOTTOM		R-PBGA-B44	3	1.95 V	1 mm	100000 Write/Erase Cycles		5 mm	Not Qualified	TOP	33554432 bit	1.7 V					260	NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
KFG1216Q2B-DEB8	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel		32MX16	32M	-30 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63	3						Not Qualified		536870912 bit			1K	e1		260	SLC NAND TYPE	.00005 Amp			9 ns		NO
K8S6415ETB-DE7CT	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20	Flash Memories	.5 mm	85 Cel		4MX16	4M	-25 Cel	8,127	YES		YES	BOTTOM		R-PBGA-B44							Not Qualified	TOP	67108864 bit							NOR TYPE	.00005 Amp		YES	70 ns		YES
KFG1216D2M-DEB0	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	20 mA	33554432 words	2.65	NO	2.65	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel		32MX16	32M	-30 Cel	512	YES		YES	BOTTOM		R-PBGA-B63							Not Qualified		536870912 bit			1K				MLC NAND TYPE	.00005 Amp			14.5 ns		NO
K8A6515ETC-FE7C0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM		R-PBGA-B88		1.95 V	1.1 mm			8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11 mm		70 ns	1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.