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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
KFG5616D1M-PEBT	Samsung	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		32K	30 mA	16777216 words	2.7	NO	2.7	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	Flash Memories	.5 mm	85 Cel		16MX16	16M	-30 Cel	512	YES	MATTE TIN	YES	DUAL	R-PDSO-G48	1						Not Qualified		262144 bit			512	e3			.00005 Amp			14.5 ns		NO
K8C5615ETM-FE1E	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167							Not Qualified	TOP	268435456 bit						NOR TYPE	.00002 Amp		YES	100 ns		YES
K8S1215EBC-SE1E0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B64		1.95 V	1 mm					BOTTOM	536870912 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE				100 ns	1.8
K8S6615EBD-FE7E0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm					BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE								70 ns	1.8
K8P3215UQB-DE4DT	Samsung	FLASH	OTHER	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	Flash Memories	.8 mm	85 Cel		2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B48	3						Not Qualified	BOTTOM/TOP	33554432 bit			8		260	NOR TYPE	.00003 Amp		YES	70 ns		YES
K8S1215ETC-SE1F0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B64		1.95 V	1 mm					TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE				100 ns	1.8
K8C1215ETM-DE1DT	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167							Not Qualified	TOP	536870912 bit						NOR TYPE	.00002 Amp		YES	110 ns		YES
K8C1115ETM-DE1FT	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167							Not Qualified	TOP	536870912 bit						NOR TYPE	.00002 Amp		YES	110 ns		YES
K8S5715EBC-DE1D0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE		7.7 mm		100 ns	1.8
KFH4G16Q2M-DEB8S	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	45 mA	268435456 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel		256MX16	256M	-30 Cel	4K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3						Not Qualified		4294967296 bit			1K	e1	260	SLC NAND TYPE	.0001 Amp			76 ns		NO
KLMDG8JENB-B0410	Samsung	FLASH	OTHER	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			137438953472 words	1.8			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		128GX8	128G	-25 Cel					BOTTOM	R-PBGA-B153		1.95 V	1.2 mm		200 MHz	11.5 mm			1099511627776 bit	1.7 V					MLC NAND TYPE		13 mm			1.8
KFG1216U2A-FEB50	Samsung	FLASH	OTHER	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3.3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		32MX16	32M	-30 Cel			TIN LEAD		BOTTOM	R-PBGA-B63		3.6 V	1 mm			9.5 mm	Not Qualified		536870912 bit	2.7 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE		e0				12 mm		76 ns	2.7
K8S5615EBC-FE1C0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE		7.7 mm		100 ns	1.8
K8P6415UQB-EE4BT	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	Flash Memories	1 mm	85 Cel		4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	S-PBGA-B64	3						Not Qualified	BOTTOM/TOP	67108864 bit			8		260	NOR TYPE	.00003 Amp		YES	60 ns		YES
K8F5615EBM-SE1D	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20	Flash Memories	.5 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B44							Not Qualified	BOTTOM	268435456 bit						NOR TYPE	.00002 Amp		YES	100 ns		YES
K8S2815ETC-FE7D	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20	Flash Memories	.5 mm	85 Cel		8MX16	8M	-25 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44							Not Qualified	TOP	134217728 bit						NOR TYPE	.00005 Amp		YES	70 ns		YES
K8A2815ETB-EE7B	Samsung	FLASH	OTHER		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY				85 Cel		8MX16	8M	-25 Cel			TIN LEAD		BOTTOM	R-PBGA-B		1.95 V					Not Qualified		134217728 bit	1.7 V			e0						90 ns	1.8
K8F1215ETM-SE1E0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		32MX16	32M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	2	1.95 V	1 mm			9 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1		NOR TYPE		11 mm		110 ns	1.8
K8F5615EBM-FE1E	Samsung	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32	Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B88							Not Qualified	BOTTOM	268435456 bit						NOR TYPE	.00002 Amp		YES	100 ns		YES
K8S3215ETF-DE7B0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20	Flash Memories	.5 mm	85 Cel	3-STATE	2MX16	2M	-25 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B44	3	1.95 V	1 mm	100000 Write/Erase Cycles		5 mm	Not Qualified	TOP	33554432 bit	1.7 V				260	NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K8P6415UQB-DE4BT	Samsung	FLASH	OTHER	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	Flash Memories	.8 mm	85 Cel		4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	R-PBGA-B48	3						Not Qualified	BOTTOM/TOP	67108864 bit			8		260	NOR TYPE	.00003 Amp		YES	60 ns		YES
K8S5615ETC-SE1E0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified	TOP	268435456 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE		7.7 mm		100 ns	1.8
K8F5615ETM-SE1ET	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20	Flash Memories	.5 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B44							Not Qualified	TOP	268435456 bit						NOR TYPE	.00002 Amp		YES	100 ns		YES
K8S5715EZC-SE1E0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified	BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE		7.7 mm		100 ns	1.8
KFG2816D1M-PED00	Samsung	FLASH	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			8388608 words	2.65			16	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		8MX16	8M	-30 Cel					DUAL	R-PDSO-G48		2.9 V	1.2 mm			12 mm	Not Qualified		134217728 bit	2.4 V							18.4 mm		76 ns	2.7
K8S5715EBC-DE1C0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE		7.7 mm		100 ns	1.8
K8S6415EBB-DE7B	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20	Flash Memories	.5 mm	85 Cel		4MX16	4M	-25 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B44							Not Qualified	BOTTOM	67108864 bit						NOR TYPE	.00005 Amp		YES	88.5 ns		YES
KFG5616Q1A-DEB5T	Samsung	FLASH	OTHER	67	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		32K	40 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA67,8X10,32	Flash Memories	.8 mm	85 Cel		16MX16	16M	-30 Cel	512	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B67	1						Not Qualified		262144 bit			512	e3		SLC NAND TYPE	.00005 Amp			14.5 ns		NO
K8S2815ETE-DE7D0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm				Not Qualified	TOP	134217728 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE								70 ns	1.8
K8S3215EBF-SE7CT	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20	Flash Memories	.5 mm	85 Cel	3-STATE	2MX16	2M	-25 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B44		1.95 V	1 mm	100000 Write/Erase Cycles		5 mm	Not Qualified	BOTTOM	33554432 bit	1.7 V					NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K8C5415ETM-DE1CT	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167							Not Qualified	TOP	268435456 bit						NOR TYPE	.00002 Amp		YES	100 ns		YES
K8S3215ETF-SE7E	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20	Flash Memories	.5 mm	85 Cel	3-STATE	2MX16	2M	-25 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B44	3	1.95 V	1 mm	100000 Write/Erase Cycles		5 mm	Not Qualified	TOP	33554432 bit	1.7 V				260	NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K8S3215ETF-HE7B	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20	Flash Memories	.5 mm	85 Cel	3-STATE	2MX16	2M	-25 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B44	3	1.95 V	1 mm	100000 Write/Erase Cycles		5 mm	Not Qualified	TOP	33554432 bit	1.7 V				260	NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K8A6515ETC-DE7C0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm			8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						11 mm		70 ns	1.8
KFG5616D1A-PEB50	Samsung	FLASH	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			16777216 words	2.65			16	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel		16MX16	16M	-30 Cel					DUAL	R-PDSO-G48		2.9 V	1.2 mm			12 mm	Not Qualified		268435456 bit	2.4 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE						18.4 mm		76 ns	2.7
K8S1115EBC-DE1D0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B64		1.95 V	1 mm					BOTTOM	536870912 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE				100 ns	1.8
KFKAGH6Q4M-DEB8T	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		256K	40 mA	1073741824 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories	.8 mm	85 Cel		1GX16	1G	-30 Cel	4K	YES		YES	BOTTOM	R-PBGA-B63							Not Qualified		17179869184 bit			2K			MLC NAND TYPE	.0001 Amp			76 ns		NO
K8S6815EBD-HE7B0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm					BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE								70 ns	1.8
K8S5715EBC-FE1F0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE		7.7 mm		100 ns	1.8
K8P3315UQB-DE4CT	Samsung	FLASH	OTHER	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	Flash Memories	.8 mm	85 Cel		2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B48							Not Qualified	BOTTOM/TOP	33554432 bit			8			NOR TYPE	.00003 Amp		YES	65 ns		YES
K8F1315ETM-SE1D0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		32MX16	32M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	2	1.95 V	1 mm			9 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1		NOR TYPE		11 mm		110 ns	1.8
K8S1115ETC-DE1D0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B64		1.95 V	1 mm				Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE				100 ns	1.8
K8S5415EZC-FE1C0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified	BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE		7.7 mm		100 ns	1.8
K8S2815EBC-FE7D0	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20	Flash Memories	.5 mm	85 Cel		8MX16	8M	-25 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44							Not Qualified	BOTTOM	134217728 bit						NOR TYPE	.00005 Amp		YES	70 ns		YES
KFG2816D1M-DEB00	Samsung	FLASH	OTHER	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8388608 words	2.65			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-30 Cel					BOTTOM	R-PBGA-B67		2.9 V	1 mm			7 mm	Not Qualified		134217728 bit	2.4 V							9 mm		76 ns	2.7
K8P3215UQB-EE4BT	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	Flash Memories	1 mm	85 Cel		2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64	3						Not Qualified	BOTTOM/TOP	33554432 bit			8		260	NOR TYPE	.00003 Amp		YES	60 ns		YES
K8S2615EBE-DE7C0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel		8MX16	8M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm				Not Qualified	BOTTOM	134217728 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE								70 ns	1.8
K8C1315ETM-FE1ET	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32	Flash Memories	.8 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167	3						Not Qualified	TOP	536870912 bit					240	NOR TYPE	.00002 Amp		YES	110 ns		YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.