STMicroelectronics Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M29F102BB50N1T	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	20 mA	65536 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20		Flash Memories		.5 mm	70 Cel			64KX16	64K	0 Cel	1,2,1,1	YES	MATTE TIN		DUAL		R-PDSO-G40	5.5 V	1.2 mm			10 mm	Not Qualified		BOTTOM	1048576 bit	4.5 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.0001 Amp	12.4 mm		50 ns	5	YES
M28F1001-12XB114	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE					2.54 mm	70 Cel		3-STATE	128KX8	128K	0 Cel					DUAL		R-PDIP-T32	5.25 V				15.24 mm	Not Qualified			1048576 bit	4.75 V	10000 ERASE/PROGRAM CYCLES					NOR TYPE				120 ns	12
M29R800B-150N1	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	1048576 words	3.3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	16	Flash Memories		.5 mm	70 Cel		3-STATE	1MX8	1M	0 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM	8388608 bit	2.7 V			e0			NOR TYPE	.000005 Amp	18.4 mm		150 ns	3	YES
M28F102-12XK6	STMicroelectronics	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories		1.27 mm	85 Cel			64KX16	64K	-40 Cel		YES	TIN LEAD		QUAD		S-PQCC-J44	5.25 V	4.57 mm			16.5862 mm	Not Qualified			1048576 bit	4.75 V	BULK ERASE		e0			NOR TYPE	.0001 Amp	16.5862 mm		120 ns	12	NO
M29W160BT120N1	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel			1MX16	1M	0 Cel	1,2,1,31	YES	TIN LEAD	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified		TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		120 ns	2.7	YES
M29W400BB55ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel			256KX16	256K	-40 Cel	1,2,1,7	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM		R-PBGA-B48	3.6 V	1.2 mm	100000 Write/Erase Cycles		6 mm	Not Qualified		BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.0001 Amp	9 mm		55 ns	3	YES
M29W040B55N6F	STMicroelectronics	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	524288 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel			512KX8	512K	-40 Cel	8	YES	TIN/TIN BISMUTH		DUAL		R-PDSO-G32	3.6 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			4194304 bit	3 V			e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		55 ns	3	YES
M29W800B-90M5R	STMicroelectronics	FLASH	OTHER	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE		16			1.27 mm	85 Cel			1MX8	1M	-20 Cel					DUAL		R-PDSO-G44	3.6 V	2.62 mm			13.3 mm	Not Qualified		BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK					NOR TYPE		28.2 mm		90 ns	3
M58BW032DT45T3	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		4K,2K,16K		1048576 words	3.3	NO	3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel			1MX32	1M	-40 Cel	4,8,62	YES			QUAD		R-PQFP-G80						Not Qualified		TOP	33554432 bit			4				NOR TYPE	.0001 Amp		YES	45 ns		NO
M29W160DT90ZA1	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	70 Cel			1MX16	1M	0 Cel	1,2,1,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM		R-PBGA-B48	3.6 V	1.2 mm			8 mm	Not Qualified		TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE	.0001 Amp	9 mm		90 ns	3	YES
M29W640DB90N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel			4MX16	4M	-40 Cel	8,127	YES	TIN/TIN BISMUTH	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK		e3/e6	30	260	NOR TYPE	.0001 Amp	18.4 mm	YES	90 ns	3	YES
M29F400BB70N3E	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel			256KX16	256K	-40 Cel	1,2,1,7	YES	TIN/TIN BISMUTH	YES	DUAL		R-PDSO-G48	5.5 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M28F210-80YN1TR	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel			256KX8	256K	0 Cel					DUAL		R-PDSO-G48	5.5 V	1.2 mm			12 mm	Not Qualified		TOP	2097152 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; USER CONFIGURABLE AS 128K X 16; BLOCK ERASE; TOP BOOT BLOCK					NOR TYPE		18.4 mm		80 ns	12
M28F410-70XN6TR	STMicroelectronics	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			512KX8	512K	-40 Cel					DUAL		R-PDSO-G56	5.25 V	1.2 mm			14 mm	Not Qualified		TOP	4194304 bit	4.75 V	100000 PROGRAM/ERASE CYCLES; ALSO CONFIGURABLE AS 256K X 16; BLOCK ERASE; TOP BOOT BLOCK					NOR TYPE		18.4 mm		70 ns	12
M29W008B-150N5TR	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	3.3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel		3-STATE	1MX8	1M	-20 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL		R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles		10 mm	Not Qualified		BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		150 ns	3	YES
M28W640ECT70ZB1S	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.75 mm	70 Cel			4MX16	4M	0 Cel					BOTTOM		R-PBGA-B48	3.6 V	1.2 mm			6.39 mm	Not Qualified		TOP	67108864 bit	3 V	TOP BOOT BLOCK					NOR TYPE		10.5 mm		70 ns	3
M28F220-90YM6TR	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE		16			1.27 mm	85 Cel			256KX8	256K	-40 Cel					DUAL		R-PDSO-G44	5.5 V	2.62 mm			13.3 mm	Not Qualified		BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK					NOR TYPE		28.2 mm		90 ns	12
M28F101-70XN6R	STMicroelectronics	FLASH	INDUSTRIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel	YES	3-STATE	128KX8	128K	-40 Cel		YES	TIN LEAD		DUAL		R-PDSO-G32	5.25 V	1.2 mm			8 mm	Not Qualified			1048576 bit	4.75 V			e0			NOR TYPE	.00005 Amp	18.4 mm		70 ns	12	NO
M29W800DXB70M1T	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel			512KX16	512K	0 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL		R-PDSO-G44	3.6 V	2.8 mm			13.3 mm	Not Qualified		BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm	YES	70 ns	3	YES
M45PE20-VMP6TG	STMicroelectronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		15 mA	262144 words	3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel			256KX8	256K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-XDSO-N8	3.6 V	1 mm	100000 Write/Erase Cycles	33 MHz	5 mm	Not Qualified	SPI		2097152 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm			2.7
M28W160ECB100ZB6U	STMicroelectronics	FLASH	INDUSTRIAL	46	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA46,6X8,30		Flash Memories		.75 mm	85 Cel			1MX16	1M	-40 Cel	8,31	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B46	3.6 V	1.2 mm			6.37 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	6.39 mm	YES	100 ns	3	NO
M28V410-150N1TR	STMicroelectronics	FLASH	COMMERCIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel			512KX8	512K	0 Cel					DUAL		R-PDSO-G56	3.6 V	1.2 mm			14 mm	Not Qualified		TOP	4194304 bit	3 V	10000 PROGRAM/ERASE CYCLES; USER CONFIGURABLE AS 256K X 16; BLOCK ERASE					NOR TYPE		18.4 mm		150 ns	12
M28W160BT85ZB1T	STMicroelectronics	FLASH	COMMERCIAL	46	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories		.75 mm	70 Cel			1MX16	1M	0 Cel	8,31	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B46	3.6 V	1.2 mm			6.37 mm	Not Qualified		TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	6.39 mm	YES	85 ns	3	NO
M29W400DB45M1E	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel			256KX16	256K	0 Cel	1,2,1,7	YES	MATTE TIN	YES	DUAL		R-PDSO-G44	3.6 V	2.8 mm			13.3 mm	Not Qualified		BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.0001 Amp	28.2 mm		45 ns	3	YES
M29W002BT55N1	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel			256KX8	256K	0 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL		R-PDSO-G40	3.6 V	1.2 mm			10 mm	Not Qualified		TOP	2097152 bit	3 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		55 ns	3	YES
M29W800T-100N5RTR	STMicroelectronics	FLASH	OTHER	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	16	Flash Memories		.5 mm	85 Cel	YES	3-STATE	1MX8	1M	-20 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified		TOP	8388608 bit	2.7 V			e0			NOR TYPE	.0001 Amp	18.4 mm		100 ns	3	YES
M28W320ECT85ZB1F	STMicroelectronics	FLASH	COMMERCIAL	47	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.75 mm	70 Cel			2MX16	2M	0 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B47	3.6 V	1.2 mm			6.37 mm	Not Qualified		TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE		6.39 mm		85 ns	3
M28F102-150K1	STMicroelectronics	FLASH	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	CHIP CARRIER	LDCC44,.7SQ		Flash Memories		1.27 mm	70 Cel		3-STATE	64KX16	64K	0 Cel		YES	TIN LEAD		QUAD		S-PQCC-J44	5.5 V	4.57 mm			16.5862 mm	Not Qualified			1048576 bit	4.5 V	10K ERASE/PROGRAM CYCLES		e0			NOR TYPE	.0001 Amp	16.5862 mm		150 ns	12	NO
M29W040B55K1E	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	20 mA	524288 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel			512KX8	512K	0 Cel	8	YES	MATTE TIN		QUAD		R-PQCC-J32	3.6 V	3.56 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			4194304 bit	3 V			e3			NOR TYPE	.0001 Amp	13.97 mm		55 ns	3	YES
M50FW040K5T	STMicroelectronics	FLASH	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		60 mA	524288 words	3.3	NO	3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel			512KX8	512K	-20 Cel	8	YES	TIN LEAD	YES	QUAD		R-PQCC-J32	3.6 V	3.55 mm			11.43 mm	Not Qualified			4194304 bit	3 V			e0			NOR TYPE	.0001 Amp	13.97 mm		11 ns	3	NO
M28F256-12C3TR	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			32768 words	5			8	CHIP CARRIER					1.27 mm	125 Cel		3-STATE	32KX8	32K	-40 Cel					QUAD		R-PQCC-J32	5.5 V	3.56 mm			11.455 mm	Not Qualified			262144 bit	4.5 V	BULK ERASE					NOR TYPE		13.995 mm		120 ns	12
M29F002NT-90K6	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			262144 words	5			8	CHIP CARRIER				20	1.27 mm	85 Cel			256KX8	256K	-40 Cel					QUAD		R-PQCC-J32	5.5 V	3.56 mm			11.455 mm	Not Qualified		TOP	2097152 bit	4.5 V	20 YEARS DATA RETENTION; 100000 PROGRAM/ERASE CYCLES					NOR TYPE		13.995 mm		90 ns	5
M28W411-150N6TR	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			512KX8	512K	-40 Cel					DUAL		R-PDSO-G40	3.3 V	1.2 mm			10 mm	Not Qualified		TOP	4194304 bit	2.7 V	100000 PROGRAM/ERASE CYCLES; BLOCK ERASE					NOR TYPE		18.4 mm		150 ns	12
M58CR064P85ZB6	STMicroelectronics	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	30 mA	4194304 words	1.9	NO	1.8/2,1.8/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel			4MX16	4M	-40 Cel	8,127	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM		R-PBGA-B56	2 V	1.2 mm			6.5 mm	Not Qualified		TOP	67108864 bit	1.8 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e1			NOR TYPE	.000005 Amp	10 mm	YES	85 ns	1.8	NO
M29R800T-120M6TR	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE		16			1.27 mm	85 Cel		3-STATE	1MX8	1M	-40 Cel					DUAL		R-PDSO-G44	3.6 V	2.62 mm			13.3 mm	Not Qualified		TOP	8388608 bit	2.7 V						NOR TYPE		28.2 mm		120 ns	3
M29F100B-120XM1TR	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel			128KX8	128K	0 Cel	1,2,1,1	YES	TIN LEAD	YES	DUAL		R-PDSO-G44	5.25 V	2.62 mm			13.3 mm	Not Qualified		BOTTOM	1048576 bit	4.75 V	CONFG AS 64K X 16; BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		120 ns	5	YES
M28W320FSU70ZB6E	STMicroelectronics	FLASH	INDUSTRIAL	47	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA47,6X8,30		Flash Memories		.75 mm	85 Cel			2MX16	2M	-40 Cel	32	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B47	3.6 V	1.2 mm			6.37 mm	Not Qualified			33554432 bit	2.7 V			e1			NOR TYPE	.00005 Amp	6.39 mm	YES	70 ns	3	NO
M28F210-80N1	STMicroelectronics	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	35 mA	131072 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel			128KX16	128K	0 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL		R-PDSO-G48			100000 Write/Erase Cycles			Not Qualified		TOP	2097152 bit				e0			NOR TYPE	.000005 Amp			80 ns		NO
M29F002BB45N6E	STMicroelectronics	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel			256KX8	256K	-40 Cel	1,2,1,3	YES	TIN/TIN BISMUTH		DUAL		R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified		BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		45 ns	5	YES
M28W160CT70ZB6S	STMicroelectronics	FLASH	INDUSTRIAL	46	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA46,6X8,30		Flash Memories		.75 mm	85 Cel			1MX16	1M	-40 Cel	8,31	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B46	3.6 V	1.2 mm			6.37 mm	Not Qualified		TOP	16777216 bit	2.7 V			e1			NOR TYPE	.000005 Amp	6.39 mm	YES	70 ns	3	NO
M28W160CT85ZB6U	STMicroelectronics	FLASH	INDUSTRIAL	46	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA46,6X8,30		Flash Memories		.75 mm	85 Cel			1MX16	1M	-40 Cel	8,31	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B46	3.6 V	1.2 mm			6.37 mm	Not Qualified		TOP	16777216 bit	2.7 V			e1			NOR TYPE	.000005 Amp	6.39 mm	YES	85 ns	3	NO
M30L0T8000B0ZAQE	STMicroelectronics	FLASH	OTHER	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	53 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel			16MX16	16M	-25 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B88	2 V	1.4 mm			8 mm	Not Qualified		TOP	268435456 bit	1.7 V	100,000 PROGRAM/ERASE CYCLES; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8	e1			NOR TYPE	.00011 Amp	10 mm	YES	85 ns	1.8	NO
M29KW064E100ZA1T	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories		.8 mm	70 Cel			4MX16	4M	0 Cel	32	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48	3.6 V	1.2 mm			6 mm	Not Qualified			67108864 bit	2.7 V			e1			NOR TYPE	.0001 Amp	9 mm		100 ns	12	YES
M28W640FCT90ZB6F	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	4194304 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories		.75 mm	85 Cel			4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B48	3.6 V	1.2 mm			6.39 mm	Not Qualified		TOP	67108864 bit	2.7 V			e1			NOR TYPE	.000005 Amp	10.5 mm	YES	90 ns	3	NO
M28F201-100N6R	STMicroelectronics	FLASH	INDUSTRIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel	YES		256KX8	256K	-40 Cel		YES	TIN LEAD		DUAL		R-PDSO-G32	5.5 V	1.2 mm			8 mm	Not Qualified			2097152 bit	4.5 V			e0			NOR TYPE	.0001 Amp	18.4 mm		100 ns	12	NO
M29F100BB45N1T	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	65536 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel			64KX16	64K	0 Cel	1,2,1,1	YES	TIN LEAD	YES	DUAL		R-PDSO-G48	5.5 V	1.2 mm			12 mm	Not Qualified		BOTTOM	1048576 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		45 ns	5	YES
M28W320ECT90N1	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel			2MX16	2M	0 Cel					DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified		TOP	33554432 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		18.4 mm		90 ns	3
M58WR128ET10ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	60	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	30 mA	8388608 words	1.8	NO	1.8/2,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,30		Flash Memories		.75 mm	85 Cel			8MX16	8M	-40 Cel	8, 255	YES	Tin/Lead (Sn63Pb37)		BOTTOM		R-PBGA-B60	2.2 V	1 mm			12 mm	Not Qualified		TOP	134217728 bit	1.65 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e0			NOR TYPE	.000005 Amp	12.5 mm	YES	100 ns	1.8	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.