STMicroelectronics Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M28W320ECT90ZB1E	STMicroelectronics	FLASH	COMMERCIAL	47	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.75 mm	70 Cel		2MX16	2M	0 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B47		3.6 V	1.2 mm			6.37 mm	Not Qualified			TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE		6.39 mm		90 ns	3
M29W022BB70NZ6	STMicroelectronics	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		Flash Memories		.5 mm	85 Cel		256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G32		3.6 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			BOTTOM	2097152 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	12.4 mm		70 ns	2.7	YES
M29W040B90K6T	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	20 mA	524288 words	3.3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel		512KX8	512K	-40 Cel	8	YES	TIN LEAD		QUAD		R-PQCC-J32		3.6 V	3.56 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified				4194304 bit	2.7 V			e0			NOR TYPE	.0001 Amp	13.97 mm		90 ns	2.7	YES
M29F002BB120N1T	STMicroelectronics	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel		256KX8	256K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G32		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M28W160CT90N6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES	TIN/TIN BISMUTH		DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			TOP	16777216 bit	2.7 V			e3/e6	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	NO
M28F256-12B3TR	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE					2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel					DUAL		R-PDIP-T32		5.5 V	5.08 mm			15.24 mm	Not Qualified				262144 bit	4.5 V						NOR TYPE		41.91 mm		120 ns	12
M28W160CB70ZB6U	STMicroelectronics	FLASH	INDUSTRIAL	46	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA46,6X8,30		Flash Memories		.75 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B46		3.6 V	1.2 mm			6.37 mm	Not Qualified			BOTTOM	16777216 bit	2.7 V			e1			NOR TYPE	.000005 Amp	6.39 mm	YES	70 ns	3	NO
M29F080D70N6	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	1048576 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel		1MX8	1M	-40 Cel	16	YES	TIN LEAD	YES	DUAL		R-PDSO-G40		5.5 V	1.2 mm			10 mm	Not Qualified				8388608 bit	4.5 V			e0			NOR TYPE	.00015 Amp	18.4 mm	YES	70 ns	5	YES
M29F040-150XK3TR	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	125 Cel	3-STATE	512KX8	512K	-40 Cel	8	YES	TIN LEAD		QUAD		R-PQCC-J32		5.25 V	3.56 mm	100000 Write/Erase Cycles		11.455 mm	Not Qualified				4194304 bit	4.75 V			e0			NOR TYPE	.00005 Amp	13.995 mm		150 ns	5	YES
M28W320ECB70N6T	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN LEAD		DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	NO
M29F002BB90P3	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	125 Cel		256KX8	256K	-40 Cel	1,2,1,3	YES	MATTE TIN		DUAL		R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified			BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.0001 Amp	41.91 mm		70 ns	5	YES
M58BW016DT70ZA3FF	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B80		3.6 V	1.6 mm			10 mm	Not Qualified			TOP	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	70 ns	3	NO
M29W008T-120N6	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	3.3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL		R-PDSO-G40		3.6 V	1.2 mm	100000 Write/Erase Cycles		10 mm	Not Qualified			TOP	8388608 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		120 ns	3	YES
M29F100B-90M1TR	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	65536 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	1,2,1,1	YES	TIN LEAD	YES	DUAL		R-PDSO-G44		5.5 V	2.62 mm			13.3 mm	Not Qualified			BOTTOM	1048576 bit	4.5 V	CONFG AS 64K X 16; BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		90 ns	5	YES
M29W008AT80N6TR	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE				20	.5 mm	85 Cel		1MX8	1M	-40 Cel					DUAL		R-PDSO-G40		3.6 V	1.2 mm			10 mm	Not Qualified			TOP	8388608 bit	2.7 V	20 YEARS DATA RETENTION; TOP BOOT BLOCK					NOR TYPE		18.4 mm		80 ns	2.7
M28W320FST70ZB6F	STMicroelectronics	FLASH	INDUSTRIAL	47	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA47,6X8,30		Flash Memories		.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B47		3.6 V	1.2 mm			6.37 mm	Not Qualified			TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	6.39 mm	YES	70 ns	3	NO
M29W320ET70ZA6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm	Not Qualified			TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
M29W800FT9ZA3E	STMicroelectronics	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			524288 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	125 Cel		512KX16	512K	-40 Cel					BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm	Not Qualified			TOP	8388608 bit	2.7 V	TOP BOOT BLOCK							8 mm		90 ns	3
M58PR512JE96ZB5F	STMicroelectronics	FLASH	COMMERCIAL EXTENDED		DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	SYNCHRONOUS			33554432 words	1.8			16	UNCASED CHIP						85 Cel		32MX16	32M	-30 Cel					UPPER		R-XUUC-N		2 V					Not Qualified				536870912 bit	1.7 V						NOR TYPE				96 ns	1.8
M28W231-120N5TR	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		256KX8	256K	-20 Cel					DUAL		R-PDSO-G40		3.6 V	1.2 mm			10 mm	Not Qualified			TOP	2097152 bit	2.7 V						NOR TYPE		18.4 mm		120 ns	12
M29W320FB80ZA3E	STMicroelectronics	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	125 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm	Not Qualified			BOTTOM	33554432 bit	2.7 V				40	260	NOR TYPE	.0001 Amp	8 mm	YES	80 ns	3	YES
M29W002BT55N6T	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel		256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL		R-PDSO-G40		3.6 V	1.2 mm			10 mm	Not Qualified			TOP	2097152 bit	3 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		55 ns	3	YES
M58BF008D90ZA3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			262144 words	5			32	GRID ARRAY, LOW PROFILE					1 mm	125 Cel		256KX32	256K	-40 Cel					BOTTOM		R-PBGA-B80		5.5 V	1.7 mm			10 mm	Not Qualified				8388608 bit	4.5 V						NOR TYPE		12 mm		90 ns	5
M29F800DT70M3E	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			16	SMALL OUTLINE		8			1.27 mm	125 Cel		512KX16	512K	-40 Cel					DUAL		R-PDSO-G44		5.5 V	2.8 mm			13.3 mm	Not Qualified			TOP	8388608 bit	4.5 V	TOP BOOT BLOCK			NOT SPECIFIED	250	NOR TYPE		28.2 mm		70 ns	5
M28W320CB90N6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3	NO	3,3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)		DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	NO
M29W641DU12ZA1	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.8 mm	70 Cel		4MX16	4M	0 Cel					BOTTOM		R-PBGA-B63		3.6 V	1.2 mm			7 mm	Not Qualified			BOTTOM/TOP	67108864 bit	2.7 V						NOR TYPE		11 mm		120 ns	3
M28F512-12B6TR	STMicroelectronics	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			65536 words	5			8	IN-LINE					2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel					DUAL		R-PDIP-T32		5.5 V	5.08 mm			15.24 mm	Not Qualified				524288 bit	4.5 V	BULK ERASE					NOR TYPE		41.91 mm		12 ns	12
M29F160BB55N3	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.00015 Amp	18.4 mm		55 ns	5	YES
M29W200BB120N1F	STMicroelectronics	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		128KX16	128K	0 Cel	1,2,1,3	YES	TIN/TIN BISMUTH	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	2097152 bit	2.7 V	BOTTOM BOOT BLOCK		e3/e6	40	260	NOR TYPE	.0001 Amp	20 mm		90 ns	2.7	YES
M28W640ECT10ZB6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	4194304 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories		.75 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6.39 mm	Not Qualified			TOP	67108864 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	10.5 mm	YES	100 ns	3	NO
M29W800DXT45M6E	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3.3	YES	3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL		R-PDSO-G44		3.6 V	2.8 mm			13.3 mm	Not Qualified			TOP	8388608 bit	3 V	TOP BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	28.2 mm	YES	45 ns	3	YES
M29W320FB70N3E	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES	TIN/TIN BISMUTH	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	33554432 bit	2.7 V			e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M28W160T120N6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		4K,32K	20 mA	1048576 words		NO	1.65/2.2,3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES	TIN LEAD		DUAL		R-PDSO-G48							Not Qualified			TOP	16777216 bit				e0			NOR TYPE	.000005 Amp		YES	120 ns		NO
M58WR128ET80ZB6	STMicroelectronics	FLASH	INDUSTRIAL	60	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	30 mA	8388608 words	1.8	NO	1.8/2,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA60,9X10,30		Flash Memories		.75 mm	85 Cel		8MX16	8M	-40 Cel	8, 255	YES	Tin/Lead (Sn63Pb37)		BOTTOM		R-PBGA-B60		2.2 V	1 mm			12 mm	Not Qualified			TOP	134217728 bit	1.65 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e0			NOR TYPE	.000005 Amp	12.5 mm	YES	80 ns	1.8	NO
M28F210-90XN3TR	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	125 Cel		256KX8	256K	-40 Cel					DUAL		R-PDSO-G48		5.25 V	1.2 mm			12 mm	Not Qualified			TOP	2097152 bit	4.75 V	100000 PROGRAM/ERASE CYCLES; USER CONFIGURABLE AS 128K X 16; BLOCK ERASE; TOP BOOT BLOCK					NOR TYPE		18.4 mm		90 ns	12
M29W640GB90ZF6E	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified			BOTTOM	67108864 bit	2.7 V		4/8		40	260	NOR TYPE	.0001 Amp	13 mm	YES	90 ns	3	YES
M29W800B-150N1TR	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	16	Flash Memories		.5 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		150 ns	3	YES
M28W320BT85ZB1T	STMicroelectronics	FLASH	COMMERCIAL	47	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3	NO	3,3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA47,6X8,30		Flash Memories		.75 mm	70 Cel		2MX16	2M	0 Cel	8,63	YES	TIN LEAD		BOTTOM		R-PBGA-B47		3.6 V	1.2 mm			6.39 mm	Not Qualified			TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	10.5 mm	YES	85 ns	3	NO
M28F211-70XN3TR	STMicroelectronics	FLASH	AUTOMOTIVE	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	125 Cel		256KX8	256K	-40 Cel					DUAL		R-PDSO-G40		5.25 V	1.2 mm			10 mm	Not Qualified			TOP	2097152 bit	4.75 V	100000 PROGRAM/ERASE CYCLES; BLOCK ERASE; TOP BOOT BLOCK					NOR TYPE		18.4 mm		70 ns	12
M45PE40VMW6P	STMicroelectronics	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		15 mA	524288 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	2.5 mm	100000 Write/Erase Cycles	33 MHz	5.25 mm	Not Qualified	25 ms	SPI		4194304 bit	2.7 V			e3			NOR TYPE	.00001 Amp	5.3 mm			2.7
M29W800AB120N5	STMicroelectronics	FLASH	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	20	.5 mm	85 Cel		512KX16	512K	-20 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	8388608 bit	2.7 V	20 YEARS DATA RETENTION; BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		120 ns	2.7	YES
M28F1001-15XC113	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER					1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel					QUAD		R-PQCC-J32		5.25 V	3.56 mm			11.455 mm	Not Qualified				1048576 bit	4.75 V	1000 ERASE/PROGRAM CYCLES					NOR TYPE		13.995 mm		150 ns	12
M28F1001-20XB113	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE					2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel					DUAL		R-PDIP-T32		5.25 V				15.24 mm	Not Qualified				1048576 bit	4.75 V	1000 ERASE/PROGRAM CYCLES					NOR TYPE				200 ns	12
M28F411-60XN1TR	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		512KX8	512K	0 Cel					DUAL		R-PDSO-G40		5.25 V	1.2 mm			10 mm	Not Qualified			TOP	4194304 bit	4.75 V						NOR TYPE		18.4 mm		60 ns	12
M29F010B120N1	STMicroelectronics	FLASH	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel		128KX8	128K	0 Cel	8	YES	TIN LEAD		DUAL		R-PDSO-G32		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified				1048576 bit	4.5 V			e0			NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M29W320DB90ZE6T	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm	Not Qualified			BOTTOM	33554432 bit	2.7 V			e0			NOR TYPE	.0001 Amp	8 mm	YES	90 ns	3	YES
M29F400BB70N6F	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	TIN/TIN BISMUTH	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK		e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M29W800DB90M6T	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	Tin/Lead (Sn85Pb15)	YES	DUAL		R-PDSO-G44		3.6 V	2.8 mm			13.3 mm	Not Qualified			BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm	YES	90 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.