STMicroelectronics Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M28F512-15XB6	STMicroelectronics	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	85 Cel		3-STATE	64KX8	64K	-40 Cel		YES	TIN LEAD		DUAL	R-PDIP-T32	5.25 V	5.08 mm	10000 Write/Erase Cycles	15.24 mm	Not Qualified			524288 bit	4.75 V			e0			NOR TYPE	.0001 Amp	41.91 mm		15 ns	12	NO
M30LW128D110ZE6F	STMicroelectronics	FLASH MODULE	INDUSTRIAL	88	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		30 mA	8388608 words	3	NO	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA88,8X12,32	8	Flash Memories		.8 mm	85 Cel			8MX16	8M	-40 Cel		YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B88	3.6 V	1.4 mm		8 mm	Not Qualified			134217728 bit	2.7 V		4	e1			NOR TYPE	.00008 Amp	10 mm	YES	110 ns	3.3	NO
M28W320CB70ZB1	STMicroelectronics	FLASH	COMMERCIAL	47	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3	NO	3,3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA47,6X8,30		Flash Memories		.75 mm	70 Cel			2MX16	2M	0 Cel	8,63	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B47	3.6 V	1.2 mm		6.39 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.000005 Amp	10.5 mm	YES	70 ns	3	NO
M28W440-150N3TR	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			8	SMALL OUTLINE, THIN PROFILE		16			.5 mm	125 Cel		3-STATE	512KX8	512K	-40 Cel					DUAL	R-PDSO-G48	3.3 V	1.2 mm		12 mm	Not Qualified		BOTTOM	4194304 bit	2.7 V						NOR TYPE		18.4 mm		150 ns	12
M28F102-90N1	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	GULL WING	PARALLEL	ASYNCHRONOUS		50 mA	65536 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20		Flash Memories		.5 mm	70 Cel		3-STATE	64KX16	64K	0 Cel		YES	TIN LEAD		DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified			1048576 bit	4.5 V			e0			NOR TYPE	.0001 Amp	12.4 mm		90 ns	12	NO
M29W160ET90ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel			1MX16	1M	-40 Cel	1,2,1,31	YES		YES	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm		6 mm	Not Qualified		TOP	16777216 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE	.0001 Amp	8 mm	YES	90 ns	3	YES
M29F002BB55K3E	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	125 Cel			256KX8	256K	-40 Cel	1,2,1,3	YES			QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm		55 ns	5	YES
M50FLW040BN1T	STMicroelectronics	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	4K,64K	60 mA	524288 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel			512KX8	512K	0 Cel	48,5	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified		TOP	4194304 bit	3 V			e0			NOR TYPE	.0001 Amp	18.4 mm		11 ns	3	NO
M29F016B70M3	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	2097152 words	5	YES	5	8	SMALL OUTLINE	SOP44,.63		Flash Memories		1.27 mm	125 Cel			2MX8	2M	-40 Cel	32	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm		13.3 mm	Not Qualified			16777216 bit	4.5 V			e0			NOR TYPE	.00015 Amp	28.2 mm		70 ns	5	YES
M29DW323DB70ZA1T	STMicroelectronics	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories		.8 mm	70 Cel			2MX16	2M	0 Cel	8,63	YES	Tin/Lead (Sn63Pb37)	YES	BOTTOM	R-PBGA-B63	3.6 V	1.2 mm		7 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	11 mm	YES	70 ns	3	YES
M28F256-15B1TR	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE					2.54 mm	70 Cel		3-STATE	32KX8	32K	0 Cel					DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified			262144 bit	4.5 V	1000 ERASE/PROGRAM CYCLES					NOR TYPE		41.91 mm		150 ns	12
M59DR032EB10ZB6	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	26 mA	2097152 words	1.8	YES	1.8/2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories		.75 mm	85 Cel			2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn63Pb37)		BOTTOM	R-PBGA-B48	2.2 V	1.35 mm		7 mm	Not Qualified		BOTTOM	33554432 bit	1.65 V		4	e0			NOR TYPE	.00001 Amp	12 mm	YES	100 ns	1.8	YES
M59DR032EB85ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	26 mA	2097152 words	2	YES	2	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories		.75 mm	85 Cel			2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn63Pb37)		BOTTOM	R-PBGA-B48	2.2 V	1.35 mm		7 mm	Not Qualified		BOTTOM	33554432 bit	1.8 V		4	e0			NOR TYPE	.000005 Amp	12 mm	YES	85 ns	1.8	YES
M29W010B70K6	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K	20 mA	131072 words	3.3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel			128KX8	128K	-40 Cel	8	YES	TIN LEAD		QUAD	R-PQCC-J32	3.6 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			1048576 bit	2.7 V			e0			NOR TYPE	.0001 Amp	13.97 mm		70 ns	2.7	YES
M29F040-120K1	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel		3-STATE	512KX8	512K	0 Cel	8	YES	TIN LEAD		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.455 mm	Not Qualified			4194304 bit	4.5 V			e0			NOR TYPE	.0001 Amp	13.995 mm		120 ns	5	YES
M28F1001-15XC114	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			131072 words	5			8	CHIP CARRIER					1.27 mm	70 Cel		3-STATE	128KX8	128K	0 Cel					QUAD	R-PQCC-J32	5.25 V	3.56 mm		11.455 mm	Not Qualified			1048576 bit	4.75 V	10000 ERASE/PROGRAM CYCLES					NOR TYPE		13.995 mm		150 ns	12
M28W640FCT10ZB6E	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	4194304 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories		.75 mm	85 Cel			4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B48	3.6 V	1.2 mm		6.39 mm	Not Qualified		TOP	67108864 bit	2.7 V			e1			NOR TYPE	.000005 Amp	10.5 mm	YES	100 ns	3	NO
M29DW128F70NF1F	STMicroelectronics	FLASH	COMMERCIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories		.5 mm	70 Cel			8MX16	8M	0 Cel	16,254	YES	MATTE TIN/TIN BISMUTH	YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm		14 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES	8/16	e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M28F411-150N6	STMicroelectronics	FLASH	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	50 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			512KX8	512K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G40			100000 Write/Erase Cycles		Not Qualified		TOP	4194304 bit				e0			NOR TYPE	.0001 Amp			150 ns		NO
M29R800T-150M6TR	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE		16			1.27 mm	85 Cel		3-STATE	1MX8	1M	-40 Cel					DUAL	R-PDSO-G44	3.6 V	2.62 mm		13.3 mm	Not Qualified		TOP	8388608 bit	2.7 V						NOR TYPE		28.2 mm		150 ns	3
M28W640ECB70N6S	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	4194304 words	3.3	NO	1.8/3.3,3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel			4MX16	4M	-40 Cel	8,127	YES	TIN LEAD		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	67108864 bit	3 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm	YES	70 ns	3	NO
M29F100T-90N1	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	65536 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		3-STATE	64KX16	64K	0 Cel	1,2,1,1	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified		TOP	1048576 bit	4.5 V	CONFG AS 64K X 16; TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		90 ns	5	YES
M29F002BB120N6	STMicroelectronics	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel			256KX8	256K	-40 Cel	1,2,1,3	YES	MATTE TIN		DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M29F002BNT120N6T	STMicroelectronics	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel			256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M29F002BNT90N6	STMicroelectronics	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel			256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		70 ns	5	YES
M28F420-90XN6TR	STMicroelectronics	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			512KX8	512K	-40 Cel					DUAL	R-PDSO-G56	5.25 V	1.2 mm		14 mm	Not Qualified		BOTTOM	4194304 bit	4.75 V	100000 PROGRAM/ERASE CYCLES; ALSO CONFIGURABLE AS 256K X 16; BLOCK ERASE; BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		90 ns	12
M29F040B55P6T	STMicroelectronics	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			524288 words	5			8	IN-LINE					2.54 mm	85 Cel			512KX8	512K	-40 Cel					DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified			4194304 bit	4.5 V						NOR TYPE		41.91 mm		55 ns	5
M29W040-100N6RTR	STMicroelectronics	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel	YES	3-STATE	512KX8	512K	-40 Cel	8	YES	TIN LEAD		DUAL	R-PDSO-G32	3.6 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified			4194304 bit	3 V			e0			NOR TYPE	.000005 Amp	18.4 mm		100 ns	3	YES
M28F151-120N1	STMicroelectronics	FLASH	COMMERCIAL	32	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL			30 mA	196608 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel			192KX8	192K	0 Cel		YES	TIN LEAD		DUAL	R-PDSO-G32					Not Qualified			1572864 bit				e0			NOR TYPE	.0001 Amp			120 ns		NO
M29W800AB100N1T	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	20	.5 mm	70 Cel			512KX16	512K	0 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified		BOTTOM	8388608 bit	2.7 V	20 YEARS DATA RETENTION; BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		100 ns	2.7	YES
M29F400BB45M1E	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel			256KX16	256K	0 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK			40	245	NOR TYPE	.0001 Amp	28.2 mm		45 ns	5	YES
M29W002BT90N6	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified		TOP	2097152 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		90 ns	2.7	YES
M29R800B-100N6TR	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE, THIN PROFILE		16			.5 mm	85 Cel		3-STATE	1MX8	1M	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	8388608 bit	2.7 V						NOR TYPE		18.4 mm		100 ns	3
M28F201-100P3	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	262144 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	125 Cel			256KX8	256K	-40 Cel		YES	TIN LEAD		DUAL	R-PDIP-T32	5.5 V	5.08 mm		15.24 mm	Not Qualified			2097152 bit	4.5 V			e0			NOR TYPE	.0001 Amp	41.91 mm		100 ns	12	NO
M29F040B70K1E	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	20 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel			512KX8	512K	0 Cel	8	YES	TIN		QUAD	R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified			4194304 bit	4.5 V			e3			NOR TYPE	.0001 Amp	13.97 mm		70 ns	5	YES
M29F800DT55N1F	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel			512KX16	512K	0 Cel	1,2,1,15	YES	TIN/TIN BISMUTH	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified		TOP	8388608 bit	4.5 V	TOP BOOT BLOCK		e3/e6	NOT SPECIFIED	260	NOR TYPE	.00015 Amp	18.4 mm	YES	55 ns	5	YES
M29W022BT55K6T	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel			256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		QUAD	R-PQCC-J32	3.6 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		TOP	2097152 bit	3 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	13.97 mm		55 ns	3	YES
M58BW032DB55ZA3	STMicroelectronics	FLASH	AUTOMOTIVE	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories		1 mm	125 Cel			1MX32	1M	-40 Cel	4,8,62	YES			BOTTOM	R-PBGA-B80					Not Qualified		BOTTOM	33554432 bit			4				NOR TYPE	.0001 Amp		YES	55 ns		NO
M29F200BB45MT1T	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel			128KX16	128K	0 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	3 mm	100000 Write/Erase Cycles	12.6 mm	Not Qualified		BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.5 mm		45 ns	5	YES
PSD813F1VA-20MI	STMicroelectronics	FLASH	INDUSTRIAL	52	LQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			131072 words	3.3			8	FLATPACK, LOW PROFILE					.8 mm	85 Cel			128KX8	128K	-40 Cel					QUAD	S-PQFP-G52	3.6 V	1.54 mm		14 mm	Not Qualified	10 ms		1048576 bit	3 V						NOR TYPE		14 mm		20 ns	3.3
M28F256-20F112	STMicroelectronics	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		50 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP32,.6		Flash Memories		2.54 mm	70 Cel		3-STATE	32KX8	32K	0 Cel		YES	TIN LEAD		DUAL	R-GDIP-T32	5.5 V	5.72 mm	100 Write/Erase Cycles	15.24 mm	Not Qualified			262144 bit	4.5 V	100 ERASE/PROGRAM CYCLES		e0			NOR TYPE	.0001 Amp	41.885 mm		200 ns	12	NO
M28W640ECT10N1F	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel			4MX16	4M	0 Cel			TIN/TIN BISMUTH		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		TOP	67108864 bit	2.7 V	TOP BOOT BLOCK		e3/e6	NOT SPECIFIED	260	NOR TYPE		18.4 mm		100 ns	3
M28F421-150WN1	STMicroelectronics	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	50 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel			512KX8	512K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G40			100000 Write/Erase Cycles		Not Qualified		BOTTOM	4194304 bit				e0			NOR TYPE	.0001 Amp			150 ns		NO
M28W160BT100GB1	STMicroelectronics	FLASH	COMMERCIAL	46	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3	NO	1.8/2.5,3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories		.75 mm	70 Cel			1MX16	1M	0 Cel	8,31	YES	TIN LEAD		BOTTOM	R-PBGA-B46	3.6 V	1 mm		6.37 mm	Not Qualified		TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	6.39 mm	YES	100 ns	3	NO
M58BW016FT80ZA3FF	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K,16K	40 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel			512KX32	512K	-40 Cel	8,31	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B80	3.6 V	1.6 mm		10 mm	Not Qualified		TOP	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	80 ns	3	NO
M58WR032FT60ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	45 mA	2097152 words	1.8	NO	1.8,1.8/2	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel			2MX16	2M	-40 Cel	8,63	YES	TIN LEAD		BOTTOM	R-PBGA-B56	2 V	1 mm		7.7 mm	Not Qualified		TOP	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e0			NOR TYPE	.000005 Amp	9 mm	YES	60 ns	1.8	NO
M29F400B-70XN5	STMicroelectronics	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,32K,64K	60 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel			256KX16	256K	-20 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G48			100000 Write/Erase Cycles		Not Qualified		BOTTOM	4194304 bit				e0			NOR TYPE	.0001 Amp			70 ns		YES
M29F002BNB90P1	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	70 Cel			256KX8	256K	0 Cel	1,2,1,3	YES	MATTE TIN		DUAL	R-PDIP-T32	5.5 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified		BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.0001 Amp	41.91 mm		70 ns	5	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.