STMicroelectronics Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M28F411-60N5TR	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		512KX8	512K	-20 Cel					DUAL	R-PDSO-G40		5.5 V	1.2 mm		10 mm	Not Qualified	TOP	4194304 bit	4.5 V						NOR TYPE		18.4 mm		60 ns	12
M28W160BT100ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	46	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3	NO	1.8/2.5,3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30		Flash Memories		.75 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B46		3.6 V	1.2 mm		6.37 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	6.39 mm	YES	100 ns	3	NO
M29W320DB90N1F	STMicroelectronics	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	70 Cel		2MX16	2M	0 Cel			TIN/TIN BISMUTH		DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e3/e6	NOT SPECIFIED	260	NOR TYPE		18.4 mm		90 ns	3
M28V841-100M3TR	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE					1.27 mm	125 Cel	3-STATE	1MX8	1M	-40 Cel					DUAL	R-PDSO-G44		3.6 V	2.62 mm		13.3 mm	Not Qualified		8388608 bit	3 V								28.2 mm		100 ns	12
M29F002T-70P1	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	41.91 mm		70 ns	5	YES
M28F512-15B1TR	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			65536 words	5			8	IN-LINE					2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel					DUAL	R-PDIP-T32		5.5 V	5.08 mm		15.24 mm	Not Qualified		524288 bit	4.5 V	10K ERASE/PROGRAM CYCLES					NOR TYPE		41.91 mm		15 ns	12
M28W421-180N5	STMicroelectronics	FLASH	OTHER	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	25 mA	524288 words	3	NO	3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel		512KX8	512K	-20 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G40				100000 Write/Erase Cycles		Not Qualified	BOTTOM	4194304 bit				e0			NOR TYPE	.0000012 Amp			180 ns		NO
M29W800T-150N6TR	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words		YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	16	Flash Memories		.5 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	8388608 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		150 ns	3	YES
M59MR032D120ZC6	STMicroelectronics	FLASH	INDUSTRIAL	54	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	50 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,10X12,40/20		Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES			BOTTOM	R-PBGA-B54		2 V	1.2 mm		7 mm	Not Qualified	BOTTOM	33554432 bit	1.65 V		4				NOR TYPE	.000005 Amp	12 mm	YES	18 ns	1.8	YES
M29F200BT45MT6E	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL	R-PDSO-G44		5.5 V	3 mm	100000 Write/Erase Cycles	12.6 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK			40	245	NOR TYPE	.0001 Amp	28.5 mm		45 ns	5	YES
M29F800DB55M3	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G44		5.5 V	2.8 mm		13.3 mm	Not Qualified	BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.00015 Amp	28.2 mm	YES	55 ns	5	YES
M28F410-90XM1	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	35 mA	524288 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		512KX8	512K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G44		5.25 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	4194304 bit	4.75 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	28.2 mm		90 ns	12	NO
M28F101-90N6	STMicroelectronics	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel		YES	TIN LEAD		DUAL	R-PDSO-G32		5.5 V	1.2 mm		8 mm	Not Qualified		1048576 bit	4.5 V			e0			NOR TYPE	.00005 Amp	18.4 mm		90 ns	12	NO
M29W800DXT70M1	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G44		3.6 V	2.8 mm		13.3 mm	Not Qualified	TOP	8388608 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm	YES	70 ns	3	YES
M28W640CT80N1T	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			16	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		4MX16	4M	0 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	TOP	67108864 bit	3 V	TOP BOOT BLOCK					NOR TYPE		18.4 mm		80 ns	3
M29W800AT100M5T	STMicroelectronics	FLASH	OTHER	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	20	1.27 mm	85 Cel		512KX16	512K	-20 Cel	1,2,1,15	YES	Matte Tin (Sn)	YES	DUAL	R-PDSO-G44		3.6 V	2.8 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	8388608 bit	2.7 V	20 YEARS DATA RETENTION; TOP BOOT BLOCK		e3			NOR TYPE	.0001 Amp	28.2 mm		100 ns	2.7	YES
M28F1001-15XB314	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			131072 words	5			8	IN-LINE					2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel					DUAL	R-PDIP-T32		5.25 V			15.24 mm	Not Qualified		1048576 bit	4.75 V	10000 ERASE/PROGRAM CYCLES					NOR TYPE				150 ns	12
M28W800T150GB6	STMicroelectronics	FLASH	INDUSTRIAL	45	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	524288 words		NO	1.65/2.2,3	16	GRID ARRAY, FINE PITCH	BGA45,6X8,30		Flash Memories		.75 mm	85 Cel		512KX16	512K	-40 Cel	8,15	YES	TIN LEAD		BOTTOM	R-PBGA-B45						Not Qualified	TOP	8388608 bit				e0			NOR TYPE	.000005 Amp		YES	150 ns		NO
M58WR064T85ZB6	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	30 mA	4194304 words	1.8	NO	1.8/2,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	Tin/Lead (Sn63Pb37)		BOTTOM	R-PBGA-B56		2.2 V	1 mm		7.7 mm	Not Qualified	TOP	67108864 bit	1.65 V		4	e0			NOR TYPE	.000005 Amp	9 mm	YES	85 ns	1.8	NO
M28V440-120M1	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	60 mA	262144 words	3.3	NO	3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G44				10000 Write/Erase Cycles		Not Qualified	BOTTOM	4194304 bit				e0			NOR TYPE	.000005 Amp			120 ns		NO
M58BW016DTXXT3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3			32	FLATPACK					.8 mm	125 Cel		512KX32	512K	-40 Cel					QUAD	R-PQFP-G80		3.6 V	3.4 mm		14 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		20 mm		80 ns	3
M29W640GB70NB6E	STMicroelectronics	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	10 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	MATTE TIN/TIN BISMUTH	YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V		4/8	e3/e6	40	260	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M58BW016FB7ZA3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K,16K	40 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES			BOTTOM	R-PBGA-B80	1	3.6 V	1.6 mm		10 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK					NOR TYPE	.000005 Amp	12 mm	YES	70 ns	3	NO
M29W160DT70N1F	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	70 Cel		1MX16	1M	0 Cel			TIN/TIN BISMUTH		DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	TOP	16777216 bit	3 V	TOP BOOT BLOCK		e3/e6	NOT SPECIFIED	260	NOR TYPE		18.4 mm		70 ns	3
M29DW640D70N1F	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	70 Cel		4MX16	4M	0 Cel			TIN/TIN BISMUTH		DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V	BOTTOM BOOT BLOCK		e3/e6	30	260	NOR TYPE		18.4 mm		70 ns	3
M29W800AT120M5T	STMicroelectronics	FLASH	OTHER	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	20	1.27 mm	85 Cel		512KX16	512K	-20 Cel	1,2,1,15	YES	Matte Tin (Sn)	YES	DUAL	R-PDSO-G44		3.6 V	2.8 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	TOP	8388608 bit	2.7 V	20 YEARS DATA RETENTION; TOP BOOT BLOCK		e3			NOR TYPE	.0001 Amp	28.2 mm		120 ns	2.7	YES
M29W400DB45M6F	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	MATTE TIN	YES	DUAL	R-PDSO-G44		3.6 V	2.8 mm		13.3 mm	Not Qualified	BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.0001 Amp	28.2 mm		45 ns	3	YES
M29W400DT70ZA1E	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48		3.6 V	1.2 mm		6 mm	Not Qualified	TOP	4194304 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE	.0001 Amp	9 mm		70 ns	3	YES
M29R800T-150M5	STMicroelectronics	FLASH	OTHER	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	1048576 words	3.3	YES	3/3.3	8	SMALL OUTLINE	SOP44,.63	16	Flash Memories		1.27 mm	85 Cel	3-STATE	1MX8	1M	-20 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G44		3.6 V	2.62 mm		13.3 mm	Not Qualified	TOP	8388608 bit	2.7 V			e0			NOR TYPE	.000005 Amp	28.2 mm		150 ns	3	YES
M28F410-60WN6	STMicroelectronics	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	60 mA	262144 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G56						Not Qualified	TOP	4194304 bit				e0			NOR TYPE	.0001 Amp			60 ns		NO
M29W400B-150ZA1TR	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	70 Cel		512KX8	512K	0 Cel	1,2,1,7	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	100000 Write/Erase Cycles	6 mm	Not Qualified	BOTTOM	4194304 bit	2.7 V	CONFIGURABLE AS 256K X 16		e1			NOR TYPE	.00005 Amp	9 mm		150 ns	2.7	YES
M29W400T-100N5TR	STMicroelectronics	FLASH	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	3-STATE	256KX16	256K	-20 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	4194304 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.00005 Amp	18.4 mm		100 ns	2.7	YES
M29F002BNT45K1E	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel		256KX8	256K	0 Cel	1,2,1,3	YES			QUAD	R-PQCC-J32		5.5 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm		45 ns	5	YES
M50FLW040BN1TG	STMicroelectronics	FLASH	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	4K,64K	60 mA	524288 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel		512KX8	512K	0 Cel	48,5	YES		YES	DUAL	R-PDSO-G40		3.6 V	1.2 mm		10 mm	Not Qualified	TOP	4194304 bit	3 V				NOT SPECIFIED	260	NOR TYPE	.0001 Amp	18.4 mm		11 ns	3	NO
M29W040-150NZ1RTR	STMicroelectronics	FLASH	COMMERCIAL	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel	3-STATE	512KX8	512K	0 Cel					DUAL	R-PDSO-G32		3.6 V	1.2 mm		8 mm	Not Qualified		4194304 bit	2.7 V						NOR TYPE		12.4 mm		150 ns	3
M58BW032DT60T3	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		4K,2K,16K		1048576 words	3.3	NO	3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel		1MX32	1M	-40 Cel	4,8,62	YES			QUAD	R-PQFP-G80						Not Qualified	TOP	33554432 bit			4				NOR TYPE	.0001 Amp		YES	60 ns		NO
M29W008B-150N6	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	3.3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	1,2,1,15	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		150 ns	3	YES
M29W010B90K1E	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K	20 mA	131072 words	3.3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel		128KX8	128K	0 Cel	8	YES			QUAD	R-PQCC-J32		3.6 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		1048576 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm		90 ns	2.7	YES
M29F080D90M1F	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE					1.27 mm	70 Cel		1MX8	1M	0 Cel			Matte Tin (Sn)		DUAL	R-PDSO-G44		5.5 V	2.8 mm		13.3 mm	Not Qualified		8388608 bit	4.5 V			e3			NOR TYPE		28.2 mm		70 ns	5
M29W040-100N6TR	STMicroelectronics	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	8	YES	TIN LEAD		DUAL	R-PDSO-G32		3.6 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	3 V			e0			NOR TYPE	.000005 Amp	18.4 mm		100 ns	3	YES
M29W040-150K5TR	STMicroelectronics	FLASH	OTHER	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	3.3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel	3-STATE	512KX8	512K	-20 Cel	8	YES	MATTE TIN		QUAD	R-PQCC-J32		3.6 V	3.56 mm	100000 Write/Erase Cycles	11.4554 mm	Not Qualified		4194304 bit	2.7 V			e3			NOR TYPE	.000005 Amp	13.65 mm		150 ns	3	YES
M58BW016BB100ZA6FT	STMicroelectronics	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B80		3.6 V	1.7 mm		10 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	100 ns	3	NO
M28W160ECB100ZB6S	STMicroelectronics	FLASH	INDUSTRIAL	46	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA46,6X8,30		Flash Memories		.75 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B46		3.6 V	1.2 mm		6.37 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V			e1			NOR TYPE	.000005 Amp	6.39 mm	YES	100 ns	3	NO
M29W800DB45ZA1F	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	70 Cel		512KX16	512K	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48		3.6 V	1.2 mm		6 mm	Not Qualified	BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK		e1			NOR TYPE		9 mm		45 ns	3
M29DW128F70ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		10 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES	8/16		40	260	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29F002T-70K6TR	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		QUAD	R-PQCC-J32		5.5 V	3.56 mm	100000 Write/Erase Cycles	11.455 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	13.995 mm		70 ns	5	YES
M28R400C-ZBT	STMicroelectronics	FLASH	INDUSTRIAL	46	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			262144 words	1.8			16	GRID ARRAY					.75 mm	85 Cel		256KX16	256K	-40 Cel					BOTTOM	R-PBGA-B46		2.2 V	1.2 mm		6.37 mm	Not Qualified		4194304 bit	1.65 V						NOR TYPE		6.39 mm			1.8
M29F100B-90XN1TR	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		128KX8	128K	0 Cel	1,2,1,1	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		5.25 V	1.2 mm		12 mm	Not Qualified	BOTTOM	1048576 bit	4.75 V	CONFG AS 64K X 16; BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		90 ns	5	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.