Samsung Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K8S3215EBF-SE7D0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel	3-STATE	2MX16	2M	-25 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B44		1.95 V	1 mm	100000 Write/Erase Cycles	5 mm	Not Qualified	BOTTOM	33554432 bit	1.7 V						NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K8F1215ETM-DC1D	Samsung	FLASH	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel		32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B64						Not Qualified	TOP	536870912 bit							NOR TYPE	.00002 Amp		YES	110 ns		YES
KEC00C00CM-EGG0	Samsung
K8P1615UQB-PE4D000	Samsung	FLASH	COMMERCIAL EXTENDED	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		1MX16	1M	-25 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM/TOP	16777216 bit	2.7 V						NOR TYPE		18.4 mm		70 ns	2.7
K8S3215EBF-HC7CT	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel	3-STATE	2MX16	2M	0 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B44		1.95 V	1 mm	100000 Write/Erase Cycles	5 mm	Not Qualified	BOTTOM	33554432 bit	1.7 V						NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K8D3216UTCLC0800	Samsung	FLASH	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8		.8 mm	70 Cel		2MX16	2M	0 Cel					BOTTOM	R-PBGA-B48		3.6 V	1 mm		6 mm	Not Qualified	TOP	33554432 bit	2.7 V						NOR TYPE		8.5 mm		80 ns	2.7
K8F1215ETM-DE1D0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		32MX16	32M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	2	1.95 V	1 mm		9 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1			NOR TYPE		11 mm		110 ns	1.8
K8S5415EZC-FE1F0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm		6.2 mm	Not Qualified	BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		7.7 mm		100 ns	1.8
K8F1315ETM-DE1C0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		32MX16	32M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	2	1.95 V	1 mm		9 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1			NOR TYPE		11 mm		110 ns	1.8
K9WBG08U5A-9IB0T	Samsung	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		256K	30 mA	4294967296 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.63,20		Flash Memories	.5 mm	85 Cel		4GX8	4G	-40 Cel	16K	YES		YES	DUAL	R-PDSO-G56						Not Qualified		34359738368 bit			4K					.00005 Amp			20 ns		NO
K8D3216UTC-YC08T	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	50 mA	2097152 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel		2MX16	2M	0 Cel	8,63	YES		YES	DUAL	R-PDSO-G48						Not Qualified	TOP	33554432 bit							NOR TYPE	.000018 Amp		YES	80 ns		YES
KFH1G16Q2M-DCB	Samsung	FLASH	COMMERCIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	20 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	70 Cel		64MX16	64M	0 Cel	1K	YES		YES	BOTTOM	R-PBGA-B63	3					Not Qualified		1073741824 bit			1K			260		.00005 Amp			14.5 ns		NO
K8S3215EBF-DC7D0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel	3-STATE	2MX16	2M	0 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B44		1.95 V	1 mm	100000 Write/Erase Cycles	5 mm	Not Qualified	BOTTOM	33554432 bit	1.7 V						NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K8S5715ETB-DC1ET	Samsung
K9F2808U0C-VIB0T	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K	20 mA	16777216 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20		Flash Memories	.5 mm	85 Cel		16MX8	16M	-40 Cel	1K	YES		YES	DUAL	R-PDSO-G48						Not Qualified		134217728 bit			512					.00005 Amp			30 ns		NO
K8S5615EBC-FE1E0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm		6.2 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		7.7 mm		100 ns	1.8
K9K8G08U1D-SIB00	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	30 mA	1073741824 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel		1GX8	1G	-40 Cel	8K	YES		YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		8589934592 bit	2.7 V	CONTAINS ADDITIONAL 128M BIT NAND FLASH	2K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	18.4 mm		25 ns	3.3	NO
K8F1315ETM-SE1C0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		32MX16	32M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	2	1.95 V	1 mm		9 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1			NOR TYPE		11 mm		110 ns	1.8
K8F5715EBM-SE1FT	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B44						Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8D6316UBM-FI080	Samsung	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48		3.6 V	1 mm		6 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V			e0			NOR TYPE	.00003 Amp	9 mm	YES	80 ns	2.7	YES
K8C5715EBM-FE1E	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167						Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8S5515ETC-FC1F0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel		16MX16	16M	0 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm			Not Qualified	TOP	268435456 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE				100 ns	1.8
K8A6315ETC-FE7D0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm		8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11 mm		70 ns	1.8
K8S6815EBD-SE7D0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm				BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K9K1208U0C-DIB0	Samsung	FLASH	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K	40 mA	67108864 words		NO	3/3.3	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		64MX8	64M	-40 Cel	4K	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B63						Not Qualified		536870912 bit			512	e0				.00005 Amp			45 ns		NO
K8A6215ETC-FC7C0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel		4MX16	4M	0 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm		8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11 mm		70 ns	1.8
K8C5715EBM-DC1E	Samsung	FLASH	COMMERCIAL	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167						Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8A6415EBB-SC7B0	Samsung
K8S3215EBF-SE7C	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel	3-STATE	2MX16	2M	-25 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B44		1.95 V	1 mm	100000 Write/Erase Cycles	5 mm	Not Qualified	BOTTOM	33554432 bit	1.7 V						NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K8S5515ETB-DC1ET	Samsung
KM28U160T-B8	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			8	SMALL OUTLINE, THIN PROFILE		16		.5 mm	70 Cel		2MX8	2M	0 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		16777216 bit	2.7 V						NOR TYPE		18.4 mm		80 ns	3
K8P3215UQB-DC4D0	Samsung	FLASH	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	.8 mm	70 Cel		2MX16	2M	0 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B48	3	3.6 V	1 mm		6 mm	Not Qualified	BOTTOM/TOP	33554432 bit	2.7 V		8			260	NOR TYPE	.00003 Amp	8 mm	YES	70 ns	2.7	YES
K8S5415EZB-DE1C0	Samsung
K8C5715ETM-FC1D0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B167		1.95 V	1.4 mm		10.5 mm	Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0			NOR TYPE	.00002 Amp	14 mm	YES	100 ns	1.8	YES
K8S6815ETD-HE7B0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm				TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K8F1315EBM-FE1C0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		32MX16	32M	-25 Cel			TIN LEAD		BOTTOM	R-PBGA-B64		1.95 V	1 mm		9 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e0			NOR TYPE		11 mm		110 ns	1.8
KFG5616Q1A-PEB5T	Samsung	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		32K	40 mA	16777216 words	1.8	NO	1.8	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel		16MX16	16M	-30 Cel	512	YES	MATTE TIN	YES	DUAL	R-PDSO-G48	1					Not Qualified		262144 bit			512	e3			SLC NAND TYPE	.00005 Amp			14.5 ns		NO
K8C1015ETM-FC1E0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	70 Cel		32MX16	32M	0 Cel					BOTTOM	R-PBGA-B167		1.95 V	1.4 mm		10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							14 mm		110 ns	1.8
K9T1G08U0M-FCB00	Samsung	FLASH	COMMERCIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel		128MX8	128M	0 Cel			TIN BISMUTH		DUAL	R-PDSO-G48	3	3.6 V	.7 mm		12 mm	Not Qualified		1073741824 bit	2.7 V	CONTAINS ADDITIONAL 32M BIT SPARE MEMORY		e6					15.4 mm		30 ns	2.7
K8D3216UBCFI0800	Samsung	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8		.8 mm	85 Cel		2MX16	2M	-40 Cel					BOTTOM	R-PBGA-B48		3.6 V	1 mm		6 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V						NOR TYPE		8.5 mm		80 ns	2.7
K9T1G08U0M-VIB0	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K	20 mA	134217728 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20		Flash Memories	.5 mm	85 Cel		128MX8	128M	-40 Cel	8K	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48						Not Qualified		1073741824 bit			512	e0				.00005 Amp			45 ns		NO
K8S1115ETC-DE1F0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B64		1.95 V	1 mm			Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				260	NOR TYPE	.00003 Amp		YES	100 ns	1.8	YES
K8S1115EBC-FC1F0	Samsung	FLASH	COMMERCIAL	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel		32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B64	1	1.95 V	1 mm			Not Qualified	BOTTOM	536870912 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE	.00003 Amp		YES	100 ns	1.8	YES
K9E2G08U0M-PIB00	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		256MX8	256M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		2147483648 bit	2.7 V	CONTAINS ADDITIONAL 64M BIT SPARE MEMORY							18.4 mm		30 ns	2.7
K8S5515EZB-FC1E0	Samsung
K9K4G16U0M-PIB00	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		256MX16	256M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		4294967296 bit	2.7 V	CONTAINS ADDITIONAL 128M BIT SPARE MEMORY							18.4 mm		30 ns	2.7
K8S5615EBA-FC7BT	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel		16MX16	16M	0 Cel	8, 511	YES			BOTTOM	R-PBGA-B44						Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00007 Amp		YES	88.5 ns		YES
K9K1208Q0C-JCB0T	Samsung	FLASH	COMMERCIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K	20 mA	67108864 words	1.8	NO	1.8	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	70 Cel		64MX8	64M	0 Cel	4K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1					Not Qualified		536870912 bit			512	e3				.00005 Amp			40 ns		NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.