Samsung Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
KLM8G1GETF-B0410	Samsung	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel	8GX8	8G	-25 Cel					BOTTOM	R-PBGA-B153		1.95 V	.8 mm	200 MHz	11.5 mm			68719476736 bit	1.7 V	ALSO OPERATES @ 3V SUP NOM					MLC NAND TYPE		13 mm			1.8
KLM8G1GETF-B041	Samsung	FLASH CARD	OTHER					YES	1	CMOS			ASYNCHRONOUS			8589934592 words	1.8			8	GRID ARRAY					85 Cel	8GX8	8G	-25 Cel									.8 mm		11.5 mm			68719476736 bit		3.3V SUPPLY IS ALSO AVAILABLE							13 mm			1.8
KLMAG1JETD-B041	Samsung	FLASH CARD	OTHER					YES	1	CMOS						17179869184 words	1.8			8						85 Cel	16GX8	16G	-25 Cel									.8 mm		11.5 mm			137438953472 bit		3.3V SUPPLY IS ALSO AVAILABLE							13 mm			1.8
KLMAG1JETD-B0410	Samsung	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			17179869184 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel	16GX8	16G	-25 Cel					BOTTOM	R-PBGA-B153		1.95 V	.8 mm	200 MHz	11.5 mm			137438953472 bit	1.7 V	ALSO OPERATES @ 3V SUP NOM					MLC NAND TYPE		13 mm			1.8
KLMBG2JETD-B0410	Samsung	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			34359738368 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel	32GX8	32G	-25 Cel					BOTTOM	R-PBGA-B153		1.95 V	.8 mm	200 MHz	11.5 mm			274877906944 bit	1.7 V	ALSO OPERATES @ 3V SUP NOM					MLC NAND TYPE		13 mm			1.8
KLM4G1FETE-B041	Samsung	FLASH CARD	OTHER		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					4294967296 words	1.8			8	GRID ARRAY					85 Cel	4GX8	4G	-25 Cel					BOTTOM	R-PBGA-B								34359738368 bit		3.3V SUPPLY IS ALSO AVAILABLE					NAND TYPE					1.8
K9F5608U0D-PIB0	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K	25 mA	33554432 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	Flash Memories		.5 mm	85 Cel	32MX8	32M	-40 Cel	2K	YES	MATTE TIN	YES	DUAL	R-PDSO-G48	1					Not Qualified		268435456 bit			512	e3				.00005 Amp			30 ns		NO
K9F1208U0C-PCB0	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	67108864 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	Flash Memories		.5 mm	70 Cel	64MX8	64M	0 Cel	4K	YES	TIN BISMUTH	YES	DUAL	R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified		536870912 bit	2.7 V		512	e6		260		.00005 Amp	18.4 mm		30 ns	3.3	NO
K9F5608U0D-PCB0	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K	25 mA	33554432 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	Flash Memories		.5 mm	70 Cel	32MX8	32M	0 Cel	2K	YES	TIN BISMUTH	YES	DUAL	R-PDSO-G48	3					Not Qualified		268435456 bit			512	e6		260		.00005 Amp			30 ns		NO
K8P6415UQB-PI4B	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	Flash Memories		.5 mm	85 Cel	4MX16	4M	-40 Cel	16,126	YES	TIN BISMUTH	YES	DUAL	R-PDSO-G48	3					Not Qualified	BOTTOM/TOP	67108864 bit			8	e6		260	NOR TYPE	.00003 Amp		YES	60 ns		YES
KLM8G1GEME-B041	Samsung	FLASH CARD	OTHER	153		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL					8589934592 words	1.8			8						85 Cel	8GX8	8G	-25 Cel					BOTTOM	R-PBGA-B153								68719476736 bit							NAND TYPE					1.8
K9F4G08U0A-PIB0	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	30 mA	536870912 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	Flash Memories		.5 mm	85 Cel	512MX8	512M	-40 Cel	4K	YES	MATTE TIN	YES	DUAL	R-PDSO-G48	1					Not Qualified		4294967296 bit			2K	e3				.00005 Amp			20 ns		NO
K9F4G08U0D-SIB0000	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	Flash Memories		.5 mm	85 Cel	512MX8	512M	-40 Cel	4K	YES		YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		4294967296 bit	2.7 V		2K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	18.4 mm		25 ns	3.3	NO
K9F5608U0A-YCB0	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	33554432 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	Flash Memories		.5 mm	70 Cel	32MX8	32M	0 Cel	2K	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		268435456 bit	2.7 V	CONTAINS ADDITIONAL 1M X 8 BIT NAND FLASH	512	e0				.00005 Amp	18.4 mm		35 ns	2.7	NO
K9F1208U0C-PCB00	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	67108864 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	Flash Memories		.5 mm	70 Cel	64MX8	64M	0 Cel	4K	YES		YES	DUAL	R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified		536870912 bit	2.7 V	CONTAINS ADDITIONAL 16M BIT SPARE MEMORY	512			260	SLC NAND TYPE	.00005 Amp	20 mm		30 ns	3.3	NO
K9F1208U0C-PCB0T00	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K	20 mA	67108864 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	Flash Memories		.5 mm	70 Cel	64MX8	64M	0 Cel	4K	YES	TIN BISMUTH	YES	DUAL	R-PDSO-G48	3					Not Qualified		536870912 bit			512	e6		260		.00005 Amp			30 ns		NO
K9F1208U0C-PCB0T	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	67108864 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	Flash Memories		.5 mm	70 Cel	64MX8	64M	0 Cel	4K	YES	TIN BISMUTH	YES	DUAL	R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified		536870912 bit	2.7 V	CONTAINS ADDITIONAL 16M BIT SPARE MEMORY	512	e6		260	SLC NAND TYPE	.00005 Amp	20 mm		30 ns	3.3	NO
MZ-V7S2T0BW	Samsung	FLASH MODULE	COMMERCIAL		SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD					2000000000000 words				8	MICROELECTRONIC ASSEMBLY					70 Cel	2TX8	2T	0 Cel					SINGLE	R-XSMA-N								16000000000000 bit							MLC NAND TYPE
K9F1G08U0C-PCB0000	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel	128MX8	128M	0 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm			1073741824 bit	2.7 V	CONTAINS ADDITIONAL 32M BIT SPARE MEMORY					SLC NAND TYPE		18.4 mm			2.7
KLMCG4JETD-B0410	Samsung	FLASH	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			68719476736 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel	64GX8	64G	-25 Cel					BOTTOM	R-PBGA-B153		1.95 V	1 mm	200 MHz	11.5 mm			549755813888 bit	1.7 V	ALSO OPERATES @ 3V SUP NOM					MLC NAND TYPE		13 mm			1.8
K9F5608U0D-PCB0T	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	25 mA	33554432 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	Flash Memories		.5 mm	85 Cel	32MX8	32M	-40 Cel	2K	YES	TIN BISMUTH	YES	DUAL	R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified		268435456 bit	2.7 V		512	e6		260		.00005 Amp	18.4 mm		30 ns	3.3	NO
MZ-V8V500BW	Samsung	FLASH MODULE
MZ7L33T8HBLT-00A07	Samsung	FLASH MODULE		22	XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS			4222124650659 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3.84TX8	3.84T	0 Cel					UNSPECIFIED	R-XXMA-N22		5.25 V	7 mm		69.85 mm			33776997205278 bit	4.75 V						MLC NAND TYPE		100.2 mm			5
MZ-77E2T0B/EU	Samsung	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED		ASYNCHRONOUS			2199023255552 words				8	MICROELECTRONIC ASSEMBLY					70 Cel	2TX8	2T	0 Cel					UNSPECIFIED	R-XXMA-X			6.8 mm		69.85 mm			17592186044416 bit							NAND TYPE		100 mm
MZ-77E500B/EU	Samsung	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED		ASYNCHRONOUS			536870912000 words				8	MICROELECTRONIC ASSEMBLY					70 Cel	500GX8	500G	0 Cel					UNSPECIFIED	R-XXMA-X			6.8 mm		69.85 mm			4294967296000 bit							NAND TYPE		100 mm
MZ7L3960HCJR-00A07	Samsung	FLASH MODULE		22	XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS			1030792151040 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	960GX8	960G	0 Cel					UNSPECIFIED	R-XXMA-N22		5.25 V	7 mm		69.85 mm			8246337208320 bit	4.75 V						MLC NAND TYPE		100.2 mm			5
K9F2808U0M-YCB0	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	16777216 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	Flash Memories		.5 mm	70 Cel	16MX8	16M	0 Cel	1K	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		134217728 bit	2.7 V		512	e0			SLC NAND TYPE	.00005 Amp	18.4 mm		35 ns	2.7	NO
K9F2G08U0A-PIB0	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	20 mA	268435456 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	Flash Memories		.5 mm	85 Cel	256MX8	256M	-40 Cel	2K	YES	TIN BISMUTH	YES	DUAL	R-PDSO-G48	3					Not Qualified		2147483648 bit			2K	e6		260	SLC NAND TYPE	.00005 Amp			20 ns		NO
KLM8G1GEUF-B04Q	Samsung	FLASH CARD	INDUSTRIAL					YES	1	CMOS						8589934592 words	1.8			8						105 Cel	8GX8	8G	-40 Cel									.8 mm		11.5 mm			68719476736 bit		3.3V SUPPLY IS ALSO AVAILABLE							13 mm			1.8
KLM8G2FE3B-B001	Samsung	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel	8GX8	8G	-25 Cel					BOTTOM	R-PBGA-B153		3.6 V	1 mm	52 MHz	11.5 mm			68719476736 bit	2.7 V	1.8V NOMINAL SUPPLY IS ALSO AVAILABLE							13 mm			3.3
MZ-77E1T0B/EU	Samsung	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED		ASYNCHRONOUS			1099511627776 words				8	MICROELECTRONIC ASSEMBLY					70 Cel	1TX8	1T	0 Cel					UNSPECIFIED	R-XXMA-X			6.8 mm		69.85 mm			8796093022208 bit							NAND TYPE		100 mm
MZ-77Q1T0BW	Samsung	FLASH MODULE
MZ-V7S500BW	Samsung	FLASH MODULE	COMMERCIAL		SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD					500000000000 words				8	MICROELECTRONIC ASSEMBLY					70 Cel	500GX8	500G	0 Cel					SINGLE	R-XSMA-N								4000000000000 bit							MLC NAND TYPE
MZ7L3480HCHQ-00A07	Samsung	FLASH MODULE		22	XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS			515396075520 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	480GX8	480G	0 Cel					UNSPECIFIED	R-XXMA-N22		5.25 V	7 mm		69.85 mm			4123168604160 bit	4.75 V						MLC NAND TYPE		100.2 mm			5
MZ7LH1T9HMLT-00005	Samsung	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	SERIAL	SYNCHRONOUS			2061584302080 words	5			8	MICROELECTRONIC ASSEMBLY			0.25		70 Cel	1920GX8	1920G	0 Cel					UNSPECIFIED	R-XXMA-X		5.25 V	7 mm		69.85 mm			16492674416640 bit	4.75 V						NAND TYPE		100.2 mm			5
K9F1208U0B-JIB0	Samsung	FLASH	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K	20 mA	67108864 words	3.3	NO	3.3	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32	Flash Memories		.8 mm	85 Cel	64MX8	64M	-40 Cel	4K	YES		YES	BOTTOM	R-PBGA-B63	3					Not Qualified		536870912 bit			512					.00005 Amp			30 ns		NO
K9F1G08U0D-SCB0	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	35 mA	134217728 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	Flash Memories		.5 mm	70 Cel	128MX8	128M	0 Cel	1K	YES		YES	DUAL	R-PDSO-G48						Not Qualified		1073741824 bit			2K				SLC NAND TYPE	.00008 Amp			20 ns	2.7	NO
K9WAG08U1B-PIB0	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	35 mA	2147483648 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	Flash Memories		.5 mm	85 Cel	2GX8	2G	-40 Cel	16K	YES		YES	DUAL	R-PDSO-G48						Not Qualified		17179869184 bit			2K					.0002 Amp			25 ns		NO
K9WBG08U1M-PIB00	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	256K	35 mA	4294967296 words	3.3	NO	3.3	8	SMALL OUTLINE	TSSOP48,.8,20	Flash Memories		.5 mm	85 Cel	4GX8	4G	-40 Cel	16K	YES		YES	DUAL	R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified		34359738368 bit	2.7 V		4K			260		.0001 Amp	18.4 mm		20 ns	3	NO
KLM4G1FE3B-B001	Samsung	FLASH CARD	OTHER	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel	4GX8	4G	-25 Cel					BOTTOM	R-PBGA-B153		3.6 V	1 mm	52 MHz	11.5 mm			34359738368 bit	2.7 V	1.8V NOMINAL SUPPLY IS ALSO AVAILABLE							13 mm			3.3
KLMBG8FE3B-A001	Samsung	FLASH CARD	OTHER	169	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel	32GX8	32G	-25 Cel					BOTTOM	R-PBGA-B169		3.6 V	1.2 mm	52 MHz	12 mm			274877906944 bit	2.7 V	1.8V NOMINAL SUPPLY IS ALSO AVAILABLE							16 mm			3.3
MZ-76P256BW	Samsung	FLASH CARD			DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD		ASYNCHRONOUS			274877906944 words				8	UNCASED CHIP					70 Cel	256GX8	256G	0 Cel					UPPER	R-XUUC-N								2199023255552 bit							MLC NAND TYPE
MZ-M6E250BW	Samsung	FLASH MODULE	COMMERCIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD		ASYNCHRONOUS			268435456000 words				8	MICROELECTRONIC ASSEMBLY					70 Cel	250GX8	250G	0 Cel					UNSPECIFIED	R-XXMA-N								2147483648000 bit							MLC NAND TYPE
MZ-V7S1T0BW	Samsung	FLASH MODULE	COMMERCIAL		SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD					1000000000000 words				8	MICROELECTRONIC ASSEMBLY					70 Cel	1TX8	1T	0 Cel					SINGLE	R-XSMA-N								8000000000000 bit							MLC NAND TYPE
MZ-V7S250BW	Samsung	FLASH MODULE	COMMERCIAL		SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD					250000000000 words				8	MICROELECTRONIC ASSEMBLY					70 Cel	250GX8	250G	0 Cel					SINGLE	R-XSMA-N								2000000000000 bit							MLC NAND TYPE
MZ-V7S500B/AM	Samsung	FLASH MODULE	COMMERCIAL		SIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD					500000000000 words				8	MICROELECTRONIC ASSEMBLY					70 Cel	500GX8	500G	0 Cel					SINGLE	R-XSMA-N								4000000000000 bit							MLC NAND TYPE
MZ-V8P2T0B/AM	Samsung	FLASH MODULE
MZ-V8P500BW	Samsung	FLASH MODULE

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.