Samsung Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K9F2808U0M-YIB0	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	16777216 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel		16MX8	16M	-40 Cel	1K	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified			134217728 bit	2.7 V		512	e0			SLC NAND TYPE	.00005 Amp	18.4 mm		35 ns	2.7	NO
K8F5615EBM-SC1CT	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B44						Not Qualified		BOTTOM	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8C1315EBM-FE1F	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167	3					Not Qualified		BOTTOM	536870912 bit						240	NOR TYPE	.00002 Amp		YES	110 ns		YES
MZ-76P256B/KR	Samsung	FLASH CARD			DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD		ASYNCHRONOUS			274877906944 words				8	UNCASED CHIP					70 Cel		256GX8	256G	0 Cel					UPPER	R-XUUC-N									2199023255552 bit							MLC NAND TYPE
K8P2915UQB-DI4DT	Samsung	FLASH	INDUSTRIAL	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA80,8X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B80						Not Qualified		BOTTOM/TOP	134217728 bit			8				NOR TYPE	.00003 Amp		YES	70 ns		YES
K8D1716UBC-PC07	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel		1MX16	1M	0 Cel	8,31	YES	MATTE TIN	YES	DUAL	R-PDSO-G48	1	3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V			e3			NOR TYPE	.000018 Amp	18.4 mm	YES	70 ns	3	YES
K8S5515EBC-DC1C0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel		16MX16	16M	0 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm		6.2 mm	Not Qualified		BOTTOM	268435456 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		7.7 mm		100 ns	1.8
K8F5615EBM-DC1D	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B88						Not Qualified		BOTTOM	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8S5415EBB-SE1DT	Samsung
K9K4G16Q0M-YIB0	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		64K	20 mA	268435456 words	1.8	NO	1.8	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel		256MX16	256M	-40 Cel	4K	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48						Not Qualified			4294967296 bit			1K	e0				.0001 Amp			30 ns		NO
K8A6415ETC-HE7B0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		4MX16	4M	-25 Cel	8,127	YES			BOTTOM	R-PBGA-B88	3	1.95 V	1.1 mm		8 mm	Not Qualified		TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8			260	NOR TYPE	.00005 Amp	11 mm	YES	70 ns	1.8	YES
K8P6415UQB-DC4C	Samsung	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	.8 mm	70 Cel		4MX16	4M	0 Cel	16,126	YES		YES	BOTTOM	R-PBGA-B48	3					Not Qualified		BOTTOM/TOP	67108864 bit			8			260	NOR TYPE	.00003 Amp		YES	65 ns		YES
KFM1216Q2B-DEB60	Samsung	FLASH	OTHER	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	64K	25 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		32MX16	32M	-30 Cel	512	YES		YES	BOTTOM	R-PBGA-B63		1.95 V	1 mm		9.5 mm	Not Qualified			536870912 bit	1.7 V		1K				SLC NAND TYPE	.00005 Amp	12 mm		76 ns	1.8	NO
K8S2815EBE-SE7CT	Samsung
KFG1216Q2M-DEB0	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	15 mA	33554432 words	2.65	NO	2.65	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		32MX16	32M	-30 Cel	512	YES		YES	BOTTOM	R-PBGA-B63						Not Qualified			536870912 bit			1K				MLC NAND TYPE	.00005 Amp			14.5 ns		NO
K8S5415ETB-SE1D0	Samsung
K9K2G08U0M-FIB0	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	30 mA	268435456 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20		Flash Memories	.5 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES		YES	DUAL	R-PDSO-G48						Not Qualified			2147483648 bit			2K					.0001 Amp			30 ns		NO
K8S1315EBC-DC1F0	Samsung	FLASH	COMMERCIAL	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel		32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B64		1.95 V	1 mm			Not Qualified		BOTTOM	536870912 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp		YES	100 ns	1.8	YES
KFM1216Q2A-DED60	Samsung	FLASH	OTHER	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-30 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	2	1.95 V	1 mm		9.5 mm	Not Qualified			536870912 bit	1.7 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE		e1					12 mm		70 ns	1.8
K8F1215EBM-SE1D0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		32MX16	32M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	2	1.95 V	1 mm		9 mm	Not Qualified		BOTTOM	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1			NOR TYPE		11 mm		110 ns	1.8
K8D6316UBM-DC070	Samsung	FLASH	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	2	3.6 V	1 mm		6 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V			e1			NOR TYPE	.00003 Amp	9 mm	YES	70 ns	2.7	YES
MZ-76P2T0B/CN	Samsung	FLASH CARD			DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD		ASYNCHRONOUS			2199023255552 words				8	UNCASED CHIP					70 Cel		2TX8	2T	0 Cel					UPPER	R-XUUC-N									17592186044416 bit							MLC NAND TYPE
K8A6515EBC-SC7E0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel		4MX16	4M	0 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm		8 mm	Not Qualified		BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11 mm		70 ns	1.8
K8D6316UBM-TI09T	Samsung	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	4194304 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B48						Not Qualified		BOTTOM	67108864 bit							NOR TYPE	.00003 Amp		YES	90 ns		YES
K8S5715EBC-SE1F0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm		6.2 mm	Not Qualified		BOTTOM	268435456 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		7.7 mm		100 ns	1.8
K8A3215ETE-FC7CT	Samsung																																				3														240
K8A6415EBC-DC7B0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES			BOTTOM	R-PBGA-B88	3	1.95 V	1.1 mm		8 mm	Not Qualified		BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8			260	NOR TYPE	.00005 Amp	11 mm	YES	70 ns	1.8	YES
K8P6415UQB-PI4C	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel		4MX16	4M	-40 Cel	16,126	YES		YES	DUAL	R-PDSO-G48	3					Not Qualified		BOTTOM/TOP	67108864 bit			8			260	NOR TYPE	.00003 Amp		YES	65 ns		YES
K8A6215ETC-DE7E0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm		8 mm	Not Qualified		TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11 mm		70 ns	1.8
K9F2808U0C-DCB0	Samsung	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS	16K	20 mA	16777216 words	3.3	NO	3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	70 Cel		16MX8	16M	0 Cel	1K	YES		YES	BOTTOM	R-PBGA-B63		3.6 V	1 mm		9 mm	Not Qualified			134217728 bit	2.7 V	CONTAINS ADDITIONAL 4M BIT NAND FLASH	512				SLC NAND TYPE	.00005 Amp	11 mm		30 ns	2.7	NO
K8S6615ETD-FC7D0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel		4MX16	4M	0 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm			Not Qualified		TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K8S5715EBC-SC1E0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel		16MX16	16M	0 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm		6.2 mm	Not Qualified		BOTTOM	268435456 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		7.7 mm		100 ns	1.8
K8S2815EBC-FC7DT	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel		8MX16	8M	0 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44						Not Qualified		BOTTOM	134217728 bit							NOR TYPE	.00005 Amp		YES	70 ns		YES
KFG1216D2A-DIB50	Samsung	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	2.65			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-40 Cel					BOTTOM	R-PBGA-B63		2.9 V	1 mm		9.5 mm	Not Qualified			536870912 bit	2.4 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE							12 mm		76 ns	2.7
K8A6215ETC-HE7C0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm		8 mm	Not Qualified		TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11 mm		70 ns	1.8
KM29C010-09	Samsung	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		40 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6		EEPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel		NO	TIN LEAD		DUAL	R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles	15.24 mm	Not Qualified	10 ms		1048576 bit	4.5 V		128	e0				.0001 Amp	42.035 mm		90 ns	5	YES
K8A5715ETC-FC1F0	Samsung
K8S1115EBC-SE1E0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B64		1.95 V	1 mm			Not Qualified		BOTTOM	536870912 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp		YES	100 ns	1.8	YES
K8F5615ETM-SC1F	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B44						Not Qualified		TOP	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8C1115EBM-DE1D0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B167		1.95 V	1.4 mm		10.5 mm			BOTTOM	536870912 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							14 mm		110 ns	1.8
K9K2G16U0M-YIB00	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		128MX16	128M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified			2147483648 bit	2.7 V	CONTAINS ADDITIONAL 64M BIT NAND FLASH					SLC NAND TYPE		18.4 mm		30 ns	2.7
K8P1615UQB-DC4BT	Samsung	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	1048576 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	.8 mm	70 Cel		1MX16	1M	0 Cel	16,30	YES		YES	BOTTOM	R-PBGA-B48						Not Qualified		BOTTOM/TOP	16777216 bit			8				NOR TYPE	.00003 Amp		YES	60 ns		YES
K8A5715EZC-DC1E0	Samsung
K9F2G16U0M-YIB0T	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		64K	30 mA	134217728 words		NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel		128MX16	128M	-40 Cel	2K	YES		YES	DUAL	R-PDSO-G48						Not Qualified			2147483648 bit			1K					.00005 Amp			30 ns		NO
K8S5615ETB-FC1D0	Samsung
K8S1315EBC-SE1D0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B64		1.95 V	1 mm			Not Qualified		BOTTOM	536870912 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE				100 ns	1.8
K8C5715ETM-FE1C0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B167		1.95 V	1.4 mm		10.5 mm	Not Qualified		TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0			NOR TYPE	.00002 Amp	14 mm	YES	100 ns	1.8	YES
KFH4G16Q2M-DEB6	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	38 mA	268435456 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		256MX16	256M	-30 Cel	4K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1					Not Qualified			4294967296 bit			1K	e3			SLC NAND TYPE	.0001 Amp			76 ns		NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.