Samsung Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K8S2815EBE-SC7DT	Samsung
K8S3215ETF-FE7DT	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel	3-STATE	2MX16	2M	-25 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B44		1.95 V	1 mm	100000 Write/Erase Cycles	5 mm	Not Qualified	TOP	33554432 bit	1.7 V						NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K9K1208Q0C-GIB0T	Samsung	FLASH	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K	20 mA	67108864 words	1.8	NO	1.8	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		64MX8	64M	-40 Cel	4K	YES		YES	BOTTOM	R-PBGA-B63	1					Not Qualified		536870912 bit			512					.00005 Amp			40 ns		NO
K8S5515ETB-SE1F0	Samsung
K8D6316UTM-TI09T	Samsung	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	4194304 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B48						Not Qualified	TOP	67108864 bit							NOR TYPE	.00003 Amp		YES	90 ns		YES
K8S6815EBD-HC7B0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel		4MX16	4M	0 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm				BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K9K1208D0C-JCB0	Samsung	FLASH	COMMERCIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K	20 mA	67108864 words	2.65	NO	2.65	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	70 Cel		64MX8	64M	0 Cel	4K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1					Not Qualified		536870912 bit			512	e3				.00005 Amp			30 ns		NO
KFH1G16Q2M-DEB	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	15 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		64MX16	64M	-30 Cel	1K	YES		YES	BOTTOM	R-PBGA-B63						Not Qualified		1073741824 bit			1K				MLC NAND TYPE	.00005 Amp			14.5 ns		NO
K8D6316UTM-TC09	Samsung	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	4194304 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B48						Not Qualified	TOP	67108864 bit							NOR TYPE	.00003 Amp		YES	90 ns		YES
K8S6815ETD-FC7C0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel		4MX16	4M	0 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm			Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K8P2815UQB-DI4D	Samsung	FLASH	INDUSTRIAL	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA80,8X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-40 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B80						Not Qualified	BOTTOM/TOP	134217728 bit			8				NOR TYPE	.00003 Amp		YES	70 ns		YES
K8F5715ETM-SC1E	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B44						Not Qualified	TOP	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K9K1G16U0A-GCB00	Samsung	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel		16MX16	16M	0 Cel					BOTTOM	R-PBGA-B63		3.6 V	1.2 mm		8.5 mm	Not Qualified		268435456 bit	2.7 V	CONTAINS ADDITIONAL 32M BIT NAND FLASH					SLC NAND TYPE		16 mm		30 ns	2.7
K8S5515EZC-FC1F0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel		16MX16	16M	0 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm		6.2 mm	Not Qualified	BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		7.7 mm		100 ns	1.8
K8D3216UTC-PC080	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel		2MX16	2M	0 Cel	8,63	YES		YES	DUAL	R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified	TOP	33554432 bit	2.7 V						NOR TYPE	.000018 Amp	18.4 mm	YES	80 ns	2.7	YES
K8S6815EBD-DE7E0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm				BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
KFG2G16Q2A-DEB8T	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	35 mA	134217728 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		128MX16	128M	-30 Cel	2K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3					Not Qualified		2147483648 bit			1K	e1		260	MLC NAND TYPE	.00005 Amp			76 ns		NO
K8S3215EBF-SC7CT	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel	3-STATE	2MX16	2M	0 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B44		1.95 V	1 mm	100000 Write/Erase Cycles	5 mm	Not Qualified	BOTTOM	33554432 bit	1.7 V						NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K8F5715EBM-DE1ET	Samsung	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B88						Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K9F4008W0A-TCB0	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	20 mA	524288 words	3.3	NO	3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories	.8 mm	70 Cel		512KX8	512K	0 Cel	128	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		5.5 V	1.2 mm		10.16 mm	Not Qualified		4194304 bit	3 V		32	e0				.00005 Amp	18.41 mm		50 ns	3	NO
K9F2816U0C-HCB00	Samsung	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3.3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	70 Cel		8MX16	8M	0 Cel					BOTTOM	R-PBGA-B63		3.6 V	1 mm		9 mm	Not Qualified		134217728 bit	2.7 V	CONTAINS ADDITIONAL 4M BIT NAND FLASH			NOT SPECIFIED	260	SLC NAND TYPE		11 mm		30 ns	2.7
K8A6415ETC-SC7E0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES			BOTTOM	R-PBGA-B88	3	1.95 V	1.1 mm		8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8			260	NOR TYPE	.00005 Amp	11 mm	YES	70 ns	1.8	YES
K8P1615UQB-DE4D0	Samsung	FLASH	OTHER	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	1048576 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	.8 mm	85 Cel		1MX16	1M	-25 Cel	16,30	YES		YES	BOTTOM	R-PBGA-B48						Not Qualified	BOTTOM/TOP	16777216 bit			8				NOR TYPE	.00003 Amp		YES	70 ns		YES
K8F5715EBM-DC1D0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B88	2	1.95 V	1.2 mm		8 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE	.00002 Amp	11 mm	YES	100 ns	1.8	YES
K9F2816U0C-PCB00	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3.3			16	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		8MX16	8M	0 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		134217728 bit	2.7 V	CONTAINS ADDITIONAL 4M BIT NAND FLASH			NOT SPECIFIED	260	SLC NAND TYPE		18.4 mm		30 ns	2.7
K8A6315EBC-SC7C0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel		4MX16	4M	0 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm		8 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11 mm		70 ns	1.8
K8F5615EBM-DE1E	Samsung	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B88						Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K9F4G08U0E-SIB0	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			536870912 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		512MX8	512M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm			4294967296 bit	2.7 V						SLC NAND TYPE		18.4 mm			2.7
K8S3115EBF-FC7C0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20			.5 mm	70 Cel	3-STATE	2MX16	2M	0 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B44		1.95 V	1 mm	100000 Write/Erase Cycles	5 mm		BOTTOM	33554432 bit	1.7 V						NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K8S3215ETF-SE7ET	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel	3-STATE	2MX16	2M	-25 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B44	3	1.95 V	1 mm	100000 Write/Erase Cycles	5 mm	Not Qualified	TOP	33554432 bit	1.7 V					260	NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K8D6316UBMPC0800	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	70 Cel		4MX16	4M	0 Cel					DUAL	R-PDSO-G48	2	3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V						NOR TYPE		18.4 mm		80 ns	2.7
K8D3216UBC-YC07T	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	50 mA	2097152 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel		2MX16	2M	0 Cel	8,63	YES		YES	DUAL	R-PDSO-G48						Not Qualified	BOTTOM	33554432 bit							NOR TYPE	.000018 Amp		YES	70 ns		YES
KFKAGH6Q4M-DEB8	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		256K	40 mA	1073741824 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		1GX16	1G	-30 Cel	4K	YES		YES	BOTTOM	R-PBGA-B63						Not Qualified		17179869184 bit			2K				MLC NAND TYPE	.0001 Amp			76 ns		NO
KFG1G16Q2B-DEB80	Samsung	FLASH	COMMERCIAL EXTENDED	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	64K	40 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		64MX16	64M	-30 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3	1.95 V	1 mm		10 mm	Not Qualified		1073741824 bit	1.7 V		1K	e1		260	SLC NAND TYPE	.00005 Amp	13 mm		76 ns	1.8	NO
KM28U800IZ-B15	Samsung	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		16		.75 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel					BOTTOM	R-PBGA-B48		3.6 V	.9 mm		5.9 mm	Not Qualified		8388608 bit	2.7 V						NOR TYPE		8.3 mm		150 ns	3
K9F2816U0C-YIB00	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3.3			16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		8MX16	8M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		134217728 bit	2.7 V	CONTAINS ADDITIONAL 4M BIT NAND FLASH					SLC NAND TYPE		18.4 mm		30 ns	2.7
K8D3216UBC-YI08T	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	50 mA	2097152 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	DUAL	R-PDSO-G48						Not Qualified	BOTTOM	33554432 bit							NOR TYPE	.000018 Amp		YES	80 ns		YES
K8C1215EBM-DE1E0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B167	2	1.95 V	1.4 mm		10.5 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1			NOR TYPE		14 mm		110 ns	1.8
K8C5415ETM-DC1CT	Samsung	FLASH	COMMERCIAL	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167						Not Qualified	TOP	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K9F2G08U0M-YCB0T	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	30 mA	268435456 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	70 Cel		256MX8	256M	0 Cel	2K	YES		YES	DUAL	R-PDSO-G48	3					Not Qualified		2147483648 bit			2K			240		.00005 Amp			30 ns		NO
K8S2815EBE-SC7D0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel		8MX16	8M	0 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm			Not Qualified	BOTTOM	134217728 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K8S6415ETB-DC7B0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B44	2	1.95 V	1 mm		7.5 mm	Not Qualified	TOP	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE	.00005 Amp	8.5 mm	YES	90 ns	1.8	YES
K9F2G08U0C-BIB00	Samsung	FLASH	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	35 mA	268435456 words	3.3	NO	3.3	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES		YES	BOTTOM	R-PBGA-B63						Not Qualified		2147483648 bit			2K				SLC NAND TYPE	.00008 Amp			25 ns		NO
K8A6215ETC-DC7B0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel		4MX16	4M	0 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm		8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11 mm		70 ns	1.8
KFG2816Q1M-PED00	Samsung	FLASH	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			8388608 words	1.8			16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		8MX16	8M	-30 Cel					DUAL	R-PDSO-G48		1.95 V	1.2 mm		12 mm	Not Qualified		134217728 bit	1.7 V								18.4 mm		76 ns	1.8
K8D6316UBMLC0800	Samsung	FLASH	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8		.8 mm	70 Cel		4MX16	4M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48	2	3.6 V	1 mm		6 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V			e1			NOR TYPE		9 mm		80 ns	2.7
K8S3215ETF-HC7BT	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel	3-STATE	2MX16	2M	0 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B44	3	1.95 V	1 mm	100000 Write/Erase Cycles	5 mm	Not Qualified	TOP	33554432 bit	1.7 V					260	NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K8D3216UBC-TI080	Samsung	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B48		3.6 V	1 mm		6 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V				30	240	NOR TYPE	.000018 Amp	8.5 mm	YES	80 ns	2.7	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.