Samsung Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K8C5515EBM-DE1ET	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories		.8 mm	85 Cel			16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167						Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K9W4G08U1M-EIB0	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	30 mA	268435456 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20		Flash Memories		.5 mm	85 Cel			256MX8	256M	-40 Cel	2K	YES		YES	DUAL	R-PDSO-G48						Not Qualified		2147483648 bit			2K					.0001 Amp					NO
K8P3215UQB-PC4DT	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel			2MX16	2M	0 Cel	16,62	YES		YES	DUAL	R-PDSO-G48	3					Not Qualified	BOTTOM/TOP	33554432 bit			8			260	NOR TYPE	.00003 Amp		YES	70 ns		YES
K8P3215UQB-DC4CT	Samsung	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories		.8 mm	70 Cel			2MX16	2M	0 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B48	3					Not Qualified	BOTTOM/TOP	33554432 bit			8			260	NOR TYPE	.00003 Amp		YES	65 ns		YES
KFG1216U2A-DEB50	Samsung	FLASH	OTHER	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3.3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel			32MX16	32M	-30 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	2	3.6 V	1 mm		9.5 mm	Not Qualified		536870912 bit	2.7 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE		e1					12 mm		76 ns	2.7
K9K1G08B0B-GIB00	Samsung	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K	20 mA	134217728 words	2.7	NO	2.7	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel			128MX8	128M	-40 Cel	8K	YES		YES	BOTTOM	R-PBGA-B63		2.9 V	1.2 mm		8.5 mm	Not Qualified		1073741824 bit	2.5 V		512				SLC NAND TYPE	.00005 Amp	13.5 mm		30 ns	2.7	NO
K8S1015EZC-FE1E0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel			32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B64		1.95 V	1 mm			Not Qualified		536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE				100 ns	1.8
K8A5615EBA-FC7C	Samsung
K8S5515ETC-DC1D0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	70 Cel			16MX16	16M	0 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm			Not Qualified	TOP	268435456 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE				100 ns	1.8
K9K1G08U0A-JCB0	Samsung	FLASH	COMMERCIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K	30 mA	134217728 words	3.3	NO	3.3	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel			128MX8	128M	0 Cel	8K	YES		YES	BOTTOM	R-PBGA-B63						Not Qualified		1073741824 bit			512					.0001 Amp			30 ns		NO
K8C1315EBM-FE1FT	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories		.8 mm	85 Cel			32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167	3					Not Qualified	BOTTOM	536870912 bit						240	NOR TYPE	.00002 Amp		YES	110 ns		YES
K8P2815UQC-QE4B0	Samsung	FLASH	OTHER	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel			8MX16	8M	-25 Cel	16,254	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	BOTTOM BOOT BLOCK, TOP BOOT BLOCK	8			260	NOR TYPE	.00003 Amp	18.4 mm	YES	65 ns	3	YES
K8S2815EBE-DC7CT	Samsung
K8S3215ETE-DE7B0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel			2MX16	2M	-25 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B44	2	1.95 V	1 mm		5 mm	Not Qualified	TOP	33554432 bit	1.7 V	SYNCHRONOUS BURST OPERATION ALSO POSSIBLE		e1			NOR TYPE	.00005 Amp	7.5 mm	YES	90 ns	1.8	YES
K8D3216UBC-TC090	Samsung	FLASH	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	70 Cel			2MX16	2M	0 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B48		3.6 V	1 mm		6 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V				30	240	NOR TYPE	.000018 Amp	8.5 mm	YES	90 ns	2.7	YES
KM29N16000RS	Samsung	FLASH	COMMERCIAL	40	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	40 mA	2097152 words	5	NO	5	8	SMALL OUTLINE	TSOP40/44,.46,32		Flash Memories		.8 mm	70 Cel	YES	3-STATE	2MX8	2M	0 Cel	512	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G40		5.5 V				Not Qualified		16777216 bit	4.5 V		256	e0				.0001 Amp			45 ns	5	NO
KFW8G16Q2M-DEB6S	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K		536870912 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel			512MX16	512M	-30 Cel	8K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1					Not Qualified		8589934592 bit			1K	e3			SLC NAND TYPE				76 ns		NO
K9F2G08U0C-SCB0T	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	35 mA	268435456 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel			256MX8	256M	0 Cel	2K	YES		YES	DUAL	R-PDSO-G48						Not Qualified		2147483648 bit			2K				SLC NAND TYPE	.00008 Amp			25 ns		NO
K8P6415UQB-EE4CT	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel			4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	S-PBGA-B64	3					Not Qualified	BOTTOM/TOP	67108864 bit			8			260	NOR TYPE	.00003 Amp		YES	65 ns		YES
K8F5615EBM-DC1DT	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	70 Cel			16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B88						Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K9F8008W0M-TCB00	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE					.8 mm	70 Cel			1MX8	1M	0 Cel					DUAL	R-PDSO-G40		5.5 V	1.2 mm		10.16 mm	Not Qualified		8388608 bit	2.7 V								18.41 mm		45 ns	2.7
KFG2816D1M-PEB00	Samsung	FLASH	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			8388608 words	2.65			16	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			8MX16	8M	-30 Cel					DUAL	R-PDSO-G48		2.9 V	1.2 mm		12 mm	Not Qualified		134217728 bit	2.4 V								18.4 mm		76 ns	2.7
K8C5715EBM-FE1C	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories		.8 mm	85 Cel			16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167						Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8S3215EBF-SC7DT	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	70 Cel		3-STATE	2MX16	2M	0 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B44		1.95 V	1 mm	100000 Write/Erase Cycles	5 mm	Not Qualified	BOTTOM	33554432 bit	1.7 V						NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K8S2815EBC-FE7C	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel			8MX16	8M	-25 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44						Not Qualified	BOTTOM	134217728 bit							NOR TYPE	.00005 Amp		YES	70 ns		YES
K9E2G08B0M-PCB00	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	2.7			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel			256MX8	256M	0 Cel					DUAL	R-PDSO-G48	2	2.9 V	1.2 mm		12 mm	Not Qualified		2147483648 bit	2.5 V	CONTAINS ADDITIONAL 64M BIT SPARE MEMORY							18.4 mm		30 ns	2.7
K8C1015ETM-FC1D0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32		Flash Memories		.8 mm	70 Cel			32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167	3	1.95 V	1.4 mm		10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				240	NOR TYPE	.00002 Amp	14 mm	YES	110 ns	1.8	YES
K8C5515ETM-FC1F0	Samsung	FLASH	COMMERCIAL	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories		.8 mm	70 Cel			16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167	3					Not Qualified	TOP	268435456 bit						240	NOR TYPE	.00002 Amp		YES	100 ns		YES
K8C5715ETM-DC1D	Samsung	FLASH	COMMERCIAL	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories		.8 mm	70 Cel			16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167						Not Qualified	TOP	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
KM29U64000T	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	5			8	SMALL OUTLINE, THIN PROFILE				10	.8 mm	70 Cel			8MX8	8M	0 Cel					DUAL	R-PDSO-G40		5.5 V	1.2 mm		10.16 mm	Not Qualified		67108864 bit	2.7 V	HARDWARE DATA PROTECTION; 1M PROGRAM/ERASE CYCLES; DATA RETENTION 10 YEARS; BLOCK ERASE							18.41 mm		35 ns	2.7
K8S5515EZB-DC1E0	Samsung
K8S2815EBC-FC7D0	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	70 Cel			8MX16	8M	0 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44						Not Qualified	BOTTOM	134217728 bit							NOR TYPE	.00005 Amp		YES	70 ns		YES
KFG1216D2A-FIB60	Samsung	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	2.65			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel			32MX16	32M	-40 Cel					BOTTOM	R-PBGA-B63		2.9 V	1 mm		9.5 mm	Not Qualified		536870912 bit	2.4 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE							12 mm		76 ns	2.7
KFW8G16Q2M-DEB8T	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K		536870912 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel			512MX16	512M	-30 Cel	8K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1					Not Qualified		8589934592 bit			1K	e3			SLC NAND TYPE				76 ns		NO
K8S5615EZC-SE1D0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel			16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm		6.2 mm	Not Qualified	BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		7.7 mm		100 ns	1.8
K8F5715EBM-SC1C0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	70 Cel			16MX16	16M	0 Cel	4,255	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B44	2	1.95 V	1 mm		8 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE	.00002 Amp	9 mm	YES	100 ns	1.8	YES
K8D3216UTC-PC08	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	50 mA	2097152 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel			2MX16	2M	0 Cel	8,63	YES		YES	DUAL	R-PDSO-G48						Not Qualified	TOP	33554432 bit							NOR TYPE	.000018 Amp		YES	80 ns		YES
K8A6415EBC-DC7B	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	70 Cel			4MX16	4M	0 Cel	8,127	YES			BOTTOM	R-PBGA-B88					8 mm	Not Qualified	BOTTOM	67108864 bit			8				NOR TYPE	.00005 Amp	11 mm	YES	70 ns		YES
K9F2816U0C-HIB0T	Samsung
K8S5715EZC-DE1D0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel			16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm		6.2 mm	Not Qualified	BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		7.7 mm		100 ns	1.8
K8D1716UTC-YC08T	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	50 mA	1048576 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel			1MX16	1M	0 Cel	8,31	YES	TIN SILVER COPPER	YES	DUAL	R-PDSO-G48	3					Not Qualified	TOP	16777216 bit				e1			NOR TYPE	.000018 Amp		YES	80 ns		YES
KM28U800IT-B10	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE, THIN PROFILE		16			.5 mm	85 Cel		3-STATE	1MX8	1M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		8388608 bit	2.7 V						NOR TYPE		18.4 mm		100 ns	3
K8S5615EBA-DE7B0	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel			16MX16	16M	-25 Cel	8, 511	YES			BOTTOM	R-PBGA-B44						Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00007 Amp		YES	88.5 ns		YES
K8F5615EBM-SE1C	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel			16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B44						Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8F5615EBM-SE1FT	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel			16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B44						Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8A2815EBM-TI7B0	Samsung	FLASH	INDUSTRIAL	64	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel			8MX16	8M	-40 Cel					BOTTOM	S-PBGA-B64		1.95 V	1 mm		9 mm	Not Qualified	BOTTOM	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		9 mm		90 ns	1.8
K8S2815ETE-FE7DT	Samsung
K8P6415UQB-DI4B0	Samsung	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories		.8 mm	85 Cel			4MX16	4M	-40 Cel	16,126	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3	3.6 V	1 mm		6 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V		8	e1		260	NOR TYPE	.00003 Amp	8 mm	YES	60 ns	2.7	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.