Samsung Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K8P3215UQB-EE4B0	Samsung	FLASH	COMMERCIAL EXTENDED	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.2 mm			11 mm	Not Qualified	BOTTOM/TOP	33554432 bit	2.7 V		8			260	NOR TYPE	.00003 Amp	13 mm	YES	60 ns	2.7	YES
K8S5515EBB-SC1ET	Samsung
K8C5715EBM-DE1D0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32		Flash Memories		.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B167	2	1.95 V	1.4 mm			10.5 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE	.00002 Amp	14 mm	YES	100 ns	1.8	YES
K8D3216UTC-YI07T	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	DUAL		R-PDSO-G48	1	3.6 V	1.2 mm			12 mm	Not Qualified	TOP	33554432 bit	2.7 V						NOR TYPE	.000018 Amp	18.4 mm	YES	70 ns	2.7	YES
K8F1215EBM-FE1C0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		32MX16	32M	-25 Cel			TIN LEAD		BOTTOM		R-PBGA-B64		1.95 V	1 mm			9 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e0			NOR TYPE		11 mm		110 ns	1.8
KM28U160G-T8	Samsung	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			8	SMALL OUTLINE		16			1.27 mm	70 Cel		2MX8	2M	0 Cel					DUAL		R-PDSO-G44		3.6 V	3.1 mm			12.6 mm	Not Qualified		16777216 bit	2.7 V						NOR TYPE		28.5 mm		80 ns	3
K8F5615EBM-FC1DT	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM		R-PBGA-B88							Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8C5415ETM-FE1E0	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories		.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM		R-PBGA-B167	3						Not Qualified	TOP	268435456 bit						240	NOR TYPE	.00002 Amp		YES	100 ns		YES
K8S6815EBD-SC7E0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	70 Cel		4MX16	4M	0 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm					BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K8S5615ETA-DC7CT	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	70 Cel		16MX16	16M	0 Cel	8,511	YES			BOTTOM		R-PBGA-B44							Not Qualified	TOP	268435456 bit							NOR TYPE	.00007 Amp		YES	70 ns		YES
K8A5615ETC-FE1D0	Samsung
K8F5615ETM-SC1C	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM		R-PBGA-B44							Not Qualified	TOP	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8C1215EBM-FC1CT	Samsung	FLASH	COMMERCIAL	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories		.8 mm	70 Cel		32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM		R-PBGA-B167	3						Not Qualified	BOTTOM	536870912 bit						240	NOR TYPE	.00002 Amp		YES	110 ns		YES
MZ-76P2T0B/EU	Samsung	FLASH CARD			DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD		ASYNCHRONOUS			2199023255552 words				8	UNCASED CHIP						70 Cel		2TX8	2T	0 Cel					UPPER		R-XUUC-N									17592186044416 bit							MLC NAND TYPE
K9K2G08U0A-JIB00	Samsung	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH					.8 mm	85 Cel		256MX8	256M	-40 Cel					BOTTOM		R-PBGA-B63		3.6 V	1.2 mm			9.5 mm	Not Qualified		2147483648 bit	2.7 V						SLC NAND TYPE		12 mm		20 ns	2.7
K8C5615ETM-FE1F	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories		.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM		R-PBGA-B167							Not Qualified	TOP	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8S5415ETB-SC1DT	Samsung
K8S5415EBB-FE1CT	Samsung
K8D6316UBMDI0700	Samsung	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		4MX16	4M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B48	2	3.6 V	1 mm			6 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V			e1			NOR TYPE		9 mm		70 ns	2.7
SMFV008A	Samsung	FLASH CARD	COMMERCIAL	22		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS			8388608 words	3.3			8	MICROELECTRONIC ASSEMBLY				10		55 Cel		8MX8	8M	0 Cel					UNSPECIFIED		X-XXMA-X22		3.6 V					Not Qualified		67108864 bit	2.7 V	HARDWARE DATA PROTECTION; DATA RETENTION 10 YEARS									35 ns	2.7
KFG1216Q2A-DIB60	Samsung	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		32MX16	32M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63	2	1.95 V	1 mm			9.5 mm	Not Qualified		536870912 bit	1.7 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE		e1					12 mm		76 ns	1.8
K8F5615EBM-SC1C	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM		R-PBGA-B44							Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8A6215EBC-HC7D0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.8 mm	70 Cel		4MX16	4M	0 Cel					BOTTOM		R-PBGA-B88		1.95 V	1.1 mm			8 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11 mm		70 ns	1.8
K8C1315EBM-FE1E	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories		.8 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM		R-PBGA-B167	3						Not Qualified	BOTTOM	536870912 bit						240	NOR TYPE	.00002 Amp		YES	110 ns		YES
K9K1208D0C-HIB00	Samsung	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	2.65			8	GRID ARRAY, THIN PROFILE, FINE PITCH					.8 mm	85 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B63		2.9 V	1.2 mm			9 mm	Not Qualified		536870912 bit	2.4 V	CONTAINS ADDITIONAL 16M BIT NAND FLASH							11 mm		45 ns	2.7
K8D3216UTC-YC070	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		2MX16	2M	0 Cel	8,63	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified	TOP	33554432 bit	2.7 V				30	240	NOR TYPE	.000018 Amp	18.4 mm	YES	70 ns	2.7	YES
K9K1G08Q0A-JCB0	Samsung	FLASH	COMMERCIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K	20 mA	134217728 words	1.8	NO	1.8	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		128MX8	128M	0 Cel	8K	YES		YES	BOTTOM		R-PBGA-B63							Not Qualified		1073741824 bit			512					.0001 Amp			30 ns		NO
K9K4G16Q0M-YCB00	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	1.8			16	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		256MX16	256M	0 Cel					DUAL		R-PDSO-G48		1.95 V	1.2 mm			12 mm	Not Qualified		4294967296 bit	1.7 V	CONTAINS ADDITIONAL 128M BIT SPARE MEMORY							18.4 mm		30 ns	1.8
K8A5615EBA-DE7C	Samsung
K8F5715EBM-DC1D	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM		R-PBGA-B88							Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8C1315ETM-FC1ET	Samsung	FLASH	COMMERCIAL	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories		.8 mm	70 Cel		32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM		R-PBGA-B167	3						Not Qualified	TOP	536870912 bit						240	NOR TYPE	.00002 Amp		YES	110 ns		YES
K8D1716UTC-PI09T	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	50 mA	1048576 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES	TIN SILVER COPPER	YES	DUAL		R-PDSO-G48							Not Qualified	TOP	16777216 bit				e1			NOR TYPE	.000018 Amp		YES	90 ns		YES
K8S2715ETC-FC7E0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		70 mA	8388608 words	1.8	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH						70 Cel	3-STATE	8MX16	8M	0 Cel		NO		YES	BOTTOM	HARDWARE	R-PBGA-B44		1.95 V		100000 Write/Erase Cycles	108 MHz			TOP	134217728 bit	1.7 V						NOR TYPE	.00005 Amp		YES	70 ns	1.8	YES
K8D6316UTM-FC090	Samsung	FLASH	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B48		3.6 V	1 mm			6 mm	Not Qualified	TOP	67108864 bit	2.7 V			e0			NOR TYPE	.00003 Amp	9 mm	YES	90 ns	2.7	YES
K8D3216UBC-PC09	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	50 mA	2097152 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		2MX16	2M	0 Cel	8,63	YES		YES	DUAL		R-PDSO-G48							Not Qualified	BOTTOM	33554432 bit							NOR TYPE	.000018 Amp		YES	90 ns		YES
K8S5415EZB-FC1CT	Samsung
K9F2816Q0C-HCB0T	Samsung
K8D6316UBMTI0800	Samsung	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		4MX16	4M	-40 Cel			TIN LEAD		BOTTOM		R-PBGA-B48		3.6 V	1 mm			6 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V			e0			NOR TYPE		9 mm		80 ns	2.7
K8S1315ETC-DE1F0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM		R-PBGA-B64		1.95 V	1 mm				Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp		YES	100 ns	1.8	YES
K8P3315UQB-DI4CT	Samsung	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	16,62	YES		YES	BOTTOM		R-PBGA-B48							Not Qualified	BOTTOM/TOP	33554432 bit			8				NOR TYPE	.00003 Amp		YES	65 ns		YES
K8D6316UBM-TI070	Samsung	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM		R-PBGA-B48	1	3.6 V	1 mm			6 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V						NOR TYPE	.00003 Amp	9 mm	YES	70 ns	2.7	YES
K9S2808V0A-SSB00	Samsung	FLASH CARD	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS			16777216 words	3.3			8	MICROELECTRONIC ASSEMBLY						55 Cel		16MX8	16M	0 Cel					UNSPECIFIED		R-XXMA-X22		3.6 V					Not Qualified		134217728 bit	2.7 V										35 ns	2.7
K8A6515ETC-DE7D0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.8 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM		R-PBGA-B88		1.95 V	1.1 mm			8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11 mm		70 ns	1.8
K8S3215EBF-HE7B	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel	3-STATE	2MX16	2M	-25 Cel	8,63	YES		YES	BOTTOM		R-PBGA-B44		1.95 V	1 mm	100000 Write/Erase Cycles		5 mm	Not Qualified	BOTTOM	33554432 bit	1.7 V						NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K9K2G08Q0M-YCB0	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	20 mA	268435456 words	1.8	NO	1.8	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		256MX8	256M	0 Cel	2K	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		1.95 V	1.2 mm			12 mm	Not Qualified		2147483648 bit	1.65 V	CONTAINS ADDITIONAL 64M BIT NAND FLASH	2K	e0			SLC NAND TYPE	.0001 Amp	18.4 mm		30 ns	1.8	NO
K8D6316UTM-DC08T	Samsung	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	4194304 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES		YES	BOTTOM		R-PBGA-B48							Not Qualified	TOP	67108864 bit							NOR TYPE	.00003 Amp		YES	80 ns		YES
K8A6315ETC-HC7B0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.8 mm	70 Cel		4MX16	4M	0 Cel					BOTTOM		R-PBGA-B88		1.95 V	1.1 mm			8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11 mm		70 ns	1.8
K8P3315UQB-EE4D0	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM		S-PBGA-B64							Not Qualified	BOTTOM/TOP	33554432 bit			8				NOR TYPE	.00003 Amp		YES	70 ns		YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.