Samsung Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K8P6415UQB-PC4C0	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	.5 mm	70 Cel		4MX16	4M	0 Cel	16,126	YES		YES	DUAL	R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V		8			260	NOR TYPE	.00003 Amp	18.4 mm	YES	65 ns	2.7	YES
KFG5616D1M-PEBT	Samsung	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		32K	30 mA	16777216 words	2.7	NO	2.7	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel		16MX16	16M	-30 Cel	512	YES	MATTE TIN	YES	DUAL	R-PDSO-G48	1						Not Qualified		262144 bit			512	e3				.00005 Amp			14.5 ns		NO
K9F6408U0B-TCB00	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		8MX8	8M	0 Cel					DUAL	R-PDSO-G40		3.6 V	1.2 mm			10.16 mm	Not Qualified		67108864 bit	2.7 V								18.41 mm		35 ns	2.7
K8C5615ETM-FE1E	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167							Not Qualified	TOP	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8A6515EBC-FC7D0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel		4MX16	4M	0 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm			8 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11 mm		70 ns	1.8
K9W8G08U1M-YIB0	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	30 mA	1073741824 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel		1GX8	1G	-40 Cel	8K	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	3						Not Qualified		8589934592 bit			2K	e0		240		.0001 Amp					NO
K8D3216UTCPC0800	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	70 Cel		2MX16	2M	0 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified	TOP	33554432 bit	2.7 V						NOR TYPE		18.4 mm		80 ns	2.7
K9K2G16Q0M-PCB00	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			16	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		128MX16	128M	0 Cel					DUAL	R-PDSO-G48		1.95 V	1.2 mm			12 mm	Not Qualified		2147483648 bit	1.7 V	CONTAINS ADDITIONAL 64M BIT NAND FLASH			NOT SPECIFIED	260	SLC NAND TYPE		18.4 mm		30 ns	1.8
K8S1215EBC-SE1E0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B64		1.95 V	1 mm					BOTTOM	536870912 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE				100 ns	1.8
K8C5515ETM-DC1E0	Samsung	FLASH	COMMERCIAL	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167							Not Qualified	TOP	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8S6815ETD-DC7C0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel		4MX16	4M	0 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm				Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K8D1716UBC-FC07	Samsung	FLASH	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel		1MX16	1M	0 Cel	8,31	YES		YES	BOTTOM	R-PBGA-B48	1	3.6 V	1 mm			6 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V						NOR TYPE	.000018 Amp	8.5 mm	YES	70 ns	3	YES
K8S2815EBC-DC7ET	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel		8MX16	8M	0 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44							Not Qualified	BOTTOM	134217728 bit							NOR TYPE	.00005 Amp		YES	70 ns		YES
K8A5715ETC-SC1F0	Samsung
K8S2615ETE-DC7DT	Samsung
K8P3215UQB-EE4C0	Samsung	FLASH	COMMERCIAL EXTENDED	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel		2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.2 mm			11 mm	Not Qualified	BOTTOM/TOP	33554432 bit	2.7 V		8			260	NOR TYPE	.00003 Amp	13 mm	YES	65 ns	2.7	YES
KM28U800IZ-T10	Samsung	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		16		.75 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel					BOTTOM	R-PBGA-B48		3.6 V	.9 mm			5.9 mm	Not Qualified		8388608 bit	2.7 V						NOR TYPE		8.3 mm		100 ns	3
KLMAG2GEAC-B0310	Samsung	FLASH CARD			BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		SYNCHRONOUS			17179869184 words	5			8	GRID ARRAY							16GX8	16G						BOTTOM	R-PBGA-B			1 mm		200 MHz	11.5 mm			137438953472 bit		ALSO ORGANISED AS 64Gbx2					MLC NAND TYPE		13 mm			5
K8P6415UQB-PI4DT	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel		4MX16	4M	-40 Cel	16,126	YES		YES	DUAL	R-PDSO-G48	3						Not Qualified	BOTTOM/TOP	67108864 bit			8			260	NOR TYPE	.00003 Amp		YES	70 ns		YES
K9F8G08U0M-PCB0T	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	256K	30 mA	1073741824 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	.5 mm	70 Cel		1GX8	1G	0 Cel	4K	YES		YES	DUAL	R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified		8589934592 bit	2.7 V		4K			260		.00005 Amp	18.4 mm		20 ns	2.7	NO
K8D6316UTM-YC070	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified	TOP	67108864 bit	2.7 V			e0			NOR TYPE	.00003 Amp	18.4 mm	YES	70 ns	2.7	YES
K8D1716UTC-PI08T	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	50 mA	1048576 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES	TIN SILVER COPPER	YES	DUAL	R-PDSO-G48	3						Not Qualified	TOP	16777216 bit				e1			NOR TYPE	.000018 Amp		YES	80 ns		YES
K8S6615EBD-FE7E0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm					BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K8S6615ETD-HC7E0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel		4MX16	4M	0 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm				Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K8S5615EZB-FE1DT	Samsung
K8D6316UBMLI0700	Samsung	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8		.8 mm	85 Cel		4MX16	4M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48	2	3.6 V	1 mm			6 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V			e1			NOR TYPE		9 mm		70 ns	2.7
K8P3215UQB-DE4DT	Samsung	FLASH	OTHER	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	.8 mm	85 Cel		2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B48	3						Not Qualified	BOTTOM/TOP	33554432 bit			8			260	NOR TYPE	.00003 Amp		YES	70 ns		YES
K8D3216UTC-PI090	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	DUAL	R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified	TOP	33554432 bit	2.7 V						NOR TYPE	.000018 Amp	18.4 mm	YES	90 ns	2.7	YES
K9K2G16Q0M-YCB00	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			16	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		128MX16	128M	0 Cel					DUAL	R-PDSO-G48		1.95 V	1.2 mm			12 mm	Not Qualified		2147483648 bit	1.7 V	CONTAINS ADDITIONAL 64M BIT NAND FLASH					SLC NAND TYPE		18.4 mm		30 ns	1.8
K8S1215ETC-SE1F0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B64		1.95 V	1 mm					TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE				100 ns	1.8
K8C1215ETM-DE1DT	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167							Not Qualified	TOP	536870912 bit							NOR TYPE	.00002 Amp		YES	110 ns		YES
K8S6415ETB-DC7BT	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B44							Not Qualified	TOP	67108864 bit							NOR TYPE	.00005 Amp		YES	88.5 ns		YES
K9F4G08U1M-IIB00	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	30 mA	536870912 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories		85 Cel		512MX8	512M	-40 Cel	4K	YES		YES	BOTTOM		1						Not Qualified		4294967296 bit			2K					.00005 Amp			25 ns		NO
K9WAG08U1M-YIB00	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2147483648 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		2GX8	2G	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		17179869184 bit	2.7 V	CONTAINS ADDITIONAL 256M BIT SPARE NAND MEMORY							18.4 mm		20 ns	2.7
K8S5615ETA-FC7CT	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel		16MX16	16M	0 Cel	8,511	YES			BOTTOM	R-PBGA-B44							Not Qualified	TOP	268435456 bit							NOR TYPE	.00007 Amp		YES	70 ns		YES
K9S1608V0A-SSB00	Samsung	FLASH CARD	COMMERCIAL	22		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS			2097152 words	3.3			8	MICROELECTRONIC ASSEMBLY					55 Cel		2MX8	2M	0 Cel					UNSPECIFIED	X-XXMA-X22		3.6 V					Not Qualified		16777216 bit	3 V										45 ns	2.7
K8C1115ETM-DE1FT	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167							Not Qualified	TOP	536870912 bit							NOR TYPE	.00002 Amp		YES	110 ns		YES
K8S3215EBF-SC7C	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel	3-STATE	2MX16	2M	0 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B44		1.95 V	1 mm	100000 Write/Erase Cycles		5 mm	Not Qualified	BOTTOM	33554432 bit	1.7 V						NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K8S5515ETB-DE1F0	Samsung
K8D6316UBM-YI08T	Samsung	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	50 mA	4194304 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	DUAL	R-PDSO-G56							Not Qualified	BOTTOM	67108864 bit							NOR TYPE	.00003 Amp		YES	80 ns		YES
K8S5715EBC-DE1D0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		7.7 mm		100 ns	1.8
K8D3216UTC-TC070	Samsung	FLASH	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel		2MX16	2M	0 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B48		3.6 V	1 mm			6 mm	Not Qualified	TOP	33554432 bit	2.7 V				30	240	NOR TYPE	.000018 Amp	8.5 mm	YES	70 ns	2.7	YES
K9K1208U0C-HCB00	Samsung	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel		64MX8	64M	0 Cel					BOTTOM	R-PBGA-B63		3.6 V	1.2 mm			9 mm	Not Qualified		536870912 bit	2.7 V	CONTAINS ADDITIONAL 16M BIT NAND FLASH							11 mm		30 ns	2.7
K8S2815EBE-FC7D0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel		8MX16	8M	0 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm				Not Qualified	BOTTOM	134217728 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K9F2808U0C-YIB0	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	16777216 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel		16MX8	16M	-40 Cel	1K	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		134217728 bit	2.7 V	CONTAINS ADDITIONAL 4M BIT NAND FLASH	512	e0			SLC NAND TYPE	.00005 Amp	18.4 mm		30 ns	2.7	NO
KFH4G16Q2M-DEB8S	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	45 mA	268435456 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		256MX16	256M	-30 Cel	4K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3						Not Qualified		4294967296 bit			1K	e1		260	SLC NAND TYPE	.0001 Amp			76 ns		NO
KLMDG8JENB-B0410	Samsung	FLASH	OTHER	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			137438953472 words	1.8			8	GRID ARRAY, THIN PROFILE, FINE PITCH				.5 mm	85 Cel		128GX8	128G	-25 Cel					BOTTOM	R-PBGA-B153		1.95 V	1.2 mm		200 MHz	11.5 mm			1099511627776 bit	1.7 V						MLC NAND TYPE		13 mm			1.8
K8A5615ETC-FC1CT	Samsung

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.