Samsung Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K8S6415EBB-DE7B	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel		4MX16	4M	-25 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B44						Not Qualified		BOTTOM	67108864 bit							NOR TYPE	.00005 Amp		YES	88.5 ns		YES
KFG5616Q1A-DEB5T	Samsung	FLASH	OTHER	67	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		32K	40 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA67,8X10,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-30 Cel	512	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B67	1					Not Qualified			262144 bit			512	e3			SLC NAND TYPE	.00005 Amp			14.5 ns		NO
K8S2815ETE-DE7D0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm			Not Qualified		TOP	134217728 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K8A2815EBB-EE7C0	Samsung
K8D6316UTM-YC090	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		TOP	67108864 bit	2.7 V			e0			NOR TYPE	.00003 Amp	18.4 mm	YES	90 ns	2.7	YES
K8S6615EBD-DC7B0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel		4MX16	4M	0 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm					BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K9K8G08U1M-IIB00	Samsung	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS			1073741824 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					85 Cel		1GX8	1G	-40 Cel					BOTTOM	R-PBGA-B52	2	3.6 V	.65 mm		12 mm	Not Qualified			8589934592 bit	2.7 V								17 mm		20 ns	2.7
K8S3215EBF-SE7CT	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel	3-STATE	2MX16	2M	-25 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B44		1.95 V	1 mm	100000 Write/Erase Cycles	5 mm	Not Qualified		BOTTOM	33554432 bit	1.7 V						NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K8S5415ETB-FC1C0	Samsung
K8D6316UBM-LI08T	Samsung	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	4194304 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B48						Not Qualified		BOTTOM	67108864 bit							NOR TYPE	.00003 Amp		YES	80 ns		YES
K8A5615EBA-DC7C0	Samsung	FLASH	COMMERCIAL		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY					70 Cel		16MX16	16M	0 Cel			TIN SILVER COPPER		BOTTOM	X-PBGA-B	2	1.95 V				Not Qualified		BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE				80 ns	1.8
K8D3216UTC-PC07	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	50 mA	2097152 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel		2MX16	2M	0 Cel	8,63	YES		YES	DUAL	R-PDSO-G48						Not Qualified		TOP	33554432 bit							NOR TYPE	.000018 Amp		YES	70 ns		YES
K8D3216UTC-TC07T	Samsung	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel		2MX16	2M	0 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B48						Not Qualified		TOP	33554432 bit							NOR TYPE	.000018 Amp		YES	70 ns		YES
K8D3216UBC-TC09T	Samsung	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel		2MX16	2M	0 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B48						Not Qualified		BOTTOM	33554432 bit							NOR TYPE	.000018 Amp		YES	90 ns		YES
K8C5415ETM-DE1CT	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167						Not Qualified		TOP	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8S3215ETF-SE7E	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel	3-STATE	2MX16	2M	-25 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B44	3	1.95 V	1 mm	100000 Write/Erase Cycles	5 mm	Not Qualified		TOP	33554432 bit	1.7 V					260	NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K8S3215ETF-HE7B	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel	3-STATE	2MX16	2M	-25 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B44	3	1.95 V	1 mm	100000 Write/Erase Cycles	5 mm	Not Qualified		TOP	33554432 bit	1.7 V					260	NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K8P1615UQB-PI4D0	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		4K,32K	55 mA	1048576 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel		1MX16	1M	-40 Cel	16,30	YES		YES	DUAL	R-PDSO-G48						Not Qualified		BOTTOM/TOP	16777216 bit			8				NOR TYPE	.00003 Amp		YES	70 ns		YES
KM29V64001TS	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	30 mA	8388608 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories	.8 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	1K	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		3.6 V	1.2 mm		10.16 mm	Not Qualified			67108864 bit	3 V		512	e0				.0001 Amp	18.41 mm		35 ns	3	NO
K8A6415ETB-SE7BT	Samsung
K8A6515ETC-DE7C0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm		8 mm	Not Qualified		TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11 mm		70 ns	1.8
KFG5616D1A-PEB50	Samsung	FLASH	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			16777216 words	2.65			16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		16MX16	16M	-30 Cel					DUAL	R-PDSO-G48		2.9 V	1.2 mm		12 mm	Not Qualified			268435456 bit	2.4 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE							18.4 mm		76 ns	2.7
K8P3215UQB-DE4D0	Samsung	FLASH	COMMERCIAL EXTENDED	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	.8 mm	85 Cel		2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B48	3	3.6 V	1 mm		6 mm	Not Qualified		BOTTOM/TOP	33554432 bit	2.7 V		8			260	NOR TYPE	.00003 Amp	8 mm	YES	70 ns	2.7	YES
K9K2G08U0M-YCB00	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		256MX8	256M	0 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified			2147483648 bit	2.7 V	CONTAINS ADDITIONAL 64M BIT NAND FLASH					SLC NAND TYPE		18.4 mm		30 ns	2.7
K8S2815ETC-SC7DT	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel		8MX16	8M	0 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44						Not Qualified		TOP	134217728 bit							NOR TYPE	.00005 Amp		YES	70 ns		YES
K8F5715EBM-FC1E	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B88						Not Qualified		BOTTOM	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8A2815ETM-LI7C	Samsung	FLASH	INDUSTRIAL	64	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,8X8,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-40 Cel	8, 255	YES		YES	BOTTOM	S-PBGA-B64						Not Qualified		TOP	134217728 bit							NOR TYPE	.00005 Amp		YES	70 ns		YES
K9K8G08U0F-SCB00	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1073741824 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		1GX8	1G	0 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm				8589934592 bit	2.7 V						SLC NAND TYPE		18.4 mm			2.7
KM28U800G-T9	Samsung	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE		16		1.27 mm	70 Cel	3-STATE	1MX8	1M	0 Cel					DUAL	R-PDSO-G44		3.6 V	3.1 mm		12.6 mm	Not Qualified			8388608 bit	2.7 V						NOR TYPE		28.5 mm		90 ns	3
K9F2808U0B-DIB00	Samsung	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		16MX8	16M	-40 Cel					BOTTOM	R-PBGA-B63		3.6 V	1 mm		9 mm	Not Qualified			134217728 bit	2.7 V	CONTAINS ADDITIONAL 4M BIT SPARE MEMORY					SLC NAND TYPE		11 mm		35 ns	2.7
K8S1115EBC-DE1D0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B64		1.95 V	1 mm					BOTTOM	536870912 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE				100 ns	1.8
K8C1315EBM-FC1E	Samsung	FLASH	COMMERCIAL	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel		32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167	3					Not Qualified		BOTTOM	536870912 bit						240	NOR TYPE	.00002 Amp		YES	110 ns		YES
K8D6316UTMDI0800	Samsung	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8		.8 mm	85 Cel		4MX16	4M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48	2	3.6 V	1 mm		6 mm	Not Qualified		TOP	67108864 bit	2.7 V			e1			NOR TYPE		9 mm		80 ns	2.7
K8A5715EBC-SC1F0	Samsung
K9K1208U0A-VIB0	Samsung	FLASH	INDUSTRIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	25 mA	67108864 words	3.3	NO	3/3.3	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20		Flash Memories	.5 mm	85 Cel		64MX8	64M	-40 Cel	4K	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		3.6 V	.7 mm		12 mm	Not Qualified			536870912 bit	2.7 V		512	e0				.00005 Amp	15.4 mm		35 ns	2.7	NO
K8A6415ETC-DC7E	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES			BOTTOM	R-PBGA-B88					8 mm	Not Qualified		TOP	67108864 bit			8				NOR TYPE	.00005 Amp	11 mm	YES	70 ns		YES
KFKAGH6Q4M-DEB8T	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		256K	40 mA	1073741824 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		1GX16	1G	-30 Cel	4K	YES		YES	BOTTOM	R-PBGA-B63						Not Qualified			17179869184 bit			2K				MLC NAND TYPE	.0001 Amp			76 ns		NO
K8P2815UQB-DE4C0	Samsung	FLASH	COMMERCIAL EXTENDED	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA80,8X12,32		Flash Memories	1 mm	85 Cel		8MX16	8M	-25 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		11 mm	Not Qualified		BOTTOM/TOP	134217728 bit	2.7 V		8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	13 mm	YES	65 ns	2.7	YES
K8P6415UQB-DI4D0	Samsung	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	16,126	YES		YES	BOTTOM	R-PBGA-B48	3	3.6 V	1 mm		6 mm	Not Qualified		BOTTOM/TOP	67108864 bit	2.7 V		8			260	NOR TYPE	.00003 Amp	8 mm	YES	70 ns	2.7	YES
K9K2G08U0A-VIB00	Samsung	FLASH	INDUSTRIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH				.5 mm	85 Cel		256MX8	256M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	.7 mm		12 mm	Not Qualified			2147483648 bit	2.7 V	CONTAINS ADDITIONAL 64M BIT SPARE MEMORY					SLC NAND TYPE		15.4 mm		18 ns	2.7
K8S6815EBD-HE7B0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm					BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K8S1215ETC-FC1F0	Samsung	FLASH	COMMERCIAL	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel		32MX16	32M	0 Cel					BOTTOM	R-PBGA-B64		1.95 V	1 mm			Not Qualified		TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE				100 ns	1.8
K8C1115ETM-FC1FT	Samsung	FLASH	COMMERCIAL	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel		32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167	3					Not Qualified		TOP	536870912 bit						240	NOR TYPE	.00002 Amp		YES	110 ns		YES
KM29C010J-09	Samsung	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		40 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel		NO	TIN LEAD		QUAD	R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified	10 ms		1048576 bit	4.5 V		128	e0				.0001 Amp	13.97 mm		90 ns	5	YES
K8S5715EBC-FE1F0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm		6.2 mm	Not Qualified		BOTTOM	268435456 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		7.7 mm		100 ns	1.8
K8P3315UQB-DE4CT	Samsung	FLASH	OTHER	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	.8 mm	85 Cel		2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B48						Not Qualified		BOTTOM/TOP	33554432 bit			8				NOR TYPE	.00003 Amp		YES	65 ns		YES
K8F1315ETM-SE1D0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		32MX16	32M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	2	1.95 V	1 mm		9 mm	Not Qualified		TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1			NOR TYPE		11 mm		110 ns	1.8
K8S1115ETC-DE1D0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B64		1.95 V	1 mm			Not Qualified		TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE				100 ns	1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.