Samsung Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K8S2815EBB-DC7B	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel			8MX16	8M	0 Cel	8, 255	YES		YES	BOTTOM		R-PBGA-B44							Not Qualified		BOTTOM	134217728 bit						NOR TYPE	.00005 Amp		YES	90 ns		YES
K8S2815EBE-DC7C0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel			8MX16	8M	0 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm				Not Qualified		BOTTOM	134217728 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE								70 ns	1.8
K8S1015ETC-FE1F0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel			32MX16	32M	-25 Cel					BOTTOM		R-PBGA-B64		1.95 V	1 mm						TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE				100 ns	1.8
K8A6415EBC-FE7C	Samsung	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel			4MX16	4M	-25 Cel	8,127	YES			BOTTOM		R-PBGA-B88						8 mm	Not Qualified		BOTTOM	67108864 bit			8			NOR TYPE	.00005 Amp	11 mm	YES	70 ns		YES
KM29N16000ER	Samsung	FLASH	OTHER	40	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	40 mA	2097152 words	5	NO	5	8	SMALL OUTLINE	TSOP40/44,.46,32		Flash Memories	.8 mm	85 Cel	YES	3-STATE	2MX8	2M	-25 Cel	512	YES	Tin/Lead (Sn/Pb)	YES	DUAL		R-PDSO-G40		5.5 V					Not Qualified			16777216 bit	4.5 V		256	e0			.0001 Amp			45 ns	5	NO
K9F2808U0C-VIB0	Samsung	FLASH	INDUSTRIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	16777216 words	3.3	NO	3.3	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20		Flash Memories	.5 mm	85 Cel			16MX8	16M	-40 Cel	1K	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		3.6 V	.7 mm			12 mm	Not Qualified			134217728 bit	2.7 V	CONTAINS ADDITIONAL 4M BIT NAND FLASH	512	e0		SLC NAND TYPE	.00005 Amp	15.4 mm		30 ns	2.7	NO
KFG1216D2M-DEB50	Samsung	FLASH	OTHER	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	2.65			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel			32MX16	32M	-30 Cel					BOTTOM		R-PBGA-B63		2.9 V	1 mm			9.5 mm	Not Qualified			536870912 bit	2.4 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				MLC NAND TYPE		12 mm		76 ns	2.7
K8A5615EBC-FE1DT	Samsung
K8A5615EZC-FE1D0	Samsung
K9K8G08U0M-PCB0	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	35 mA	1073741824 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	.5 mm	70 Cel			1GX8	1G	0 Cel	8K	YES	TIN BISMUTH	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			8589934592 bit	2.7 V		2K	e6	260		.0001 Amp	18.4 mm		25 ns	2.7	NO
K9F2808U0B-YCB00	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			16777216 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			16MX8	16M	0 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			134217728 bit	2.7 V	CONTAINS ADDITIONAL 4M BIT SPARE MEMORY				SLC NAND TYPE		18.4 mm		35 ns	2.7
K8S6415EBB-FE7C0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel			4MX16	4M	-25 Cel	8,127	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B44		1.95 V	1 mm			7.5 mm	Not Qualified		BOTTOM	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0		NOR TYPE	.00005 Amp	8.5 mm	YES	80 ns	1.8	YES
K8F5615ETM-SE1F0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel			16MX16	16M	-25 Cel	4,255	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B44	2	1.95 V	1 mm			8 mm	Not Qualified		TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1		NOR TYPE	.00002 Amp	9 mm	YES	100 ns	1.8	YES
K9F2808U0C-PCB0T	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	16777216 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	70 Cel			16MX8	16M	0 Cel	1K	YES	TIN BISMUTH	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			134217728 bit	2.7 V	CONTAINS ADDITIONAL 4M BIT NAND FLASH	512	e6	260	SLC NAND TYPE	.00005 Amp	18.4 mm		30 ns	2.7	NO
KFM2G16Q2M-DEB80	Samsung	FLASH	COMMERCIAL EXTENDED	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	64K	35 mA	134217728 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel			128MX16	128M	-30 Cel	2K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63	3	1.95 V	1 mm			10 mm	Not Qualified			2147483648 bit	1.7 V		1K	e1	260	SLC NAND TYPE	.00005 Amp	13 mm		76 ns	1.8	NO
KFG5616Q1M-DEB00	Samsung	FLASH	OTHER	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	32K	25 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel			16MX16	16M	-30 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63	3	1.95 V	1 mm			9.5 mm	Not Qualified			268435456 bit	1.7 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE	512	e1	260		.00005 Amp	12 mm		76 ns	1.8	NO
K9K4G16Q0M-PCB00	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	1.8			16	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel			256MX16	256M	0 Cel					DUAL		R-PDSO-G48		1.95 V	1.2 mm			12 mm	Not Qualified			4294967296 bit	1.7 V	CONTAINS ADDITIONAL 128M BIT SPARE MEMORY						18.4 mm		30 ns	1.8
K8S5415ETC-FC1C0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel			16MX16	16M	0 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified		TOP	268435456 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE		7.7 mm		100 ns	1.8
KFG1216Q2B-DEB6	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel			32MX16	32M	-30 Cel	512	YES	MATTE TIN	YES	BOTTOM		R-PBGA-B63	1						Not Qualified			536870912 bit			1K	e3		SLC NAND TYPE	.00005 Amp			11 ns		NO
K8C1015ETM-FC1D	Samsung	FLASH	COMMERCIAL	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel			32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM		R-PBGA-B167	3						Not Qualified		TOP	536870912 bit					240	NOR TYPE	.00002 Amp		YES	110 ns		YES
K8A6415EBC-HC7C	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	70 Cel			4MX16	4M	0 Cel	8,127	YES			BOTTOM		R-PBGA-B88						8 mm	Not Qualified		BOTTOM	67108864 bit			8			NOR TYPE	.00005 Amp	11 mm	YES	70 ns		YES
K8S3215ETF-HE7D	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel		3-STATE	2MX16	2M	-25 Cel	8,63	YES		YES	BOTTOM		R-PBGA-B44	3	1.95 V	1 mm	100000 Write/Erase Cycles		5 mm	Not Qualified		TOP	33554432 bit	1.7 V				260	NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K8F5715EBM-SC1F	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel			16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM		R-PBGA-B44							Not Qualified		BOTTOM	268435456 bit						NOR TYPE	.00002 Amp		YES	100 ns		YES
K8S5615ETA-FC7B	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel			16MX16	16M	0 Cel	8,511	YES			BOTTOM		R-PBGA-B44							Not Qualified		TOP	268435456 bit						NOR TYPE	.00007 Amp		YES	88.5 ns		YES
K8A2815EBB-FC7C	Samsung	FLASH	COMMERCIAL		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY					70 Cel			8MX16	8M	0 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B	2	1.95 V					Not Qualified			134217728 bit	1.7 V			e1						80 ns	1.8
K9K1G08R0B-JIB00	Samsung	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K	20 mA	134217728 words	1.8	NO	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel			128MX8	128M	-40 Cel	8K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63	3	1.95 V	1.2 mm			8.5 mm	Not Qualified			1073741824 bit	1.65 V		512	e1	260	SLC NAND TYPE	.0001 Amp	13.5 mm		40 ns	1.8	NO
KFG1216U2A-DIB6	Samsung	FLASH	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	33554432 words	3.3	NO	3.3	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel			32MX16	32M	-40 Cel	512	YES	MATTE TIN	YES	BOTTOM		R-PBGA-B63	1						Not Qualified			536870912 bit			1K	e3			.00008 Amp			11.5 ns		NO
K8C1315EBM-DE1D0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel			32MX16	32M	-25 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B167	2	1.95 V	1.4 mm			10.5 mm	Not Qualified		BOTTOM	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1		NOR TYPE		14 mm		110 ns	1.8
KM29C010-10	Samsung	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		40 mA	131072 words	5	YES	5	8	IN-LINE	DIP32,.6		EEPROMs	2.54 mm	70 Cel		3-STATE	128KX8	128K	0 Cel		NO	TIN LEAD		DUAL		R-PDIP-T32		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	10 ms		1048576 bit	4.5 V		128	e0			.0001 Amp	42.035 mm		100 ns	5	YES
K8D3216UBC-PC09T	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	50 mA	2097152 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel			2MX16	2M	0 Cel	8,63	YES		YES	DUAL		R-PDSO-G48							Not Qualified		BOTTOM	33554432 bit						NOR TYPE	.000018 Amp		YES	90 ns		YES
K8S5415EBB-FE1C0	Samsung
K8A5615ETC-SC1CT	Samsung
KFG1216D2A-FED50	Samsung	FLASH	OTHER	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	2.65			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel			32MX16	32M	-30 Cel					BOTTOM		R-PBGA-B63		2.9 V	1 mm			9.5 mm	Not Qualified			536870912 bit	2.4 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE						12 mm		76 ns	2.7
K8F5615ETM-SE1FT	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel			16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM		R-PBGA-B44							Not Qualified		TOP	268435456 bit						NOR TYPE	.00002 Amp		YES	100 ns		YES
K8S5515ETC-FE1E0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel			16MX16	16M	-25 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm				Not Qualified		TOP	268435456 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE				100 ns	1.8
K8S3015EBF-SE7C0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20			.5 mm	85 Cel		3-STATE	2MX16	2M	-25 Cel	8,63	YES		YES	BOTTOM		R-PBGA-B44		1.95 V	1 mm	100000 Write/Erase Cycles		5 mm			BOTTOM	33554432 bit	1.7 V					NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K8S2815ETC-SE7D	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel			8MX16	8M	-25 Cel	8, 255	YES		YES	BOTTOM		R-PBGA-B44							Not Qualified		TOP	134217728 bit						NOR TYPE	.00005 Amp		YES	70 ns		YES
K8F5715ETM-DC1C	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	70 Cel			16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM		R-PBGA-B88							Not Qualified		TOP	268435456 bit						NOR TYPE	.00002 Amp		YES	100 ns		YES
K9K1G16U0A-YIB00	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			16777216 words	3.3			16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel			16MX16	16M	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			268435456 bit	2.7 V	CONTAINS ADDITIONAL 32M BIT NAND FLASH				SLC NAND TYPE		18.4 mm		30 ns	2.7
K8A6415ETC-FC7D	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	70 Cel			4MX16	4M	0 Cel	8,127	YES			BOTTOM		R-PBGA-B88						8 mm	Not Qualified		TOP	67108864 bit			8			NOR TYPE	.00005 Amp	11 mm	YES	70 ns		YES
K9K1216U0C-JCB0	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K	40 mA	33554432 words	3.3	NO	3.3	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel			32MX16	32M	0 Cel	4K	YES	MATTE TIN	YES	BOTTOM		R-PBGA-B63	1						Not Qualified			536870912 bit			256	e3			.00005 Amp			45 ns		NO
K9F2816U0C-DIB00	Samsung	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3.3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel			8MX16	8M	-40 Cel					BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm	Not Qualified			134217728 bit	2.7 V	CONTAINS ADDITIONAL 4M BIT NAND FLASH				SLC NAND TYPE		11 mm		30 ns	2.7
K8S5715EBB-DE1E0	Samsung
K9F2G08U0A-PIB00	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	20 mA	268435456 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel			256MX8	256M	-40 Cel	2K	YES	TIN BISMUTH	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			2147483648 bit	2.7 V		2K	e6	260	SLC NAND TYPE	.00005 Amp	18.4 mm		30 ns	1.8	NO
K8D1716UBC-DC09T	Samsung	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	1048576 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel			1MX16	1M	0 Cel	8,31	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48	3						Not Qualified		BOTTOM	16777216 bit				e1		NOR TYPE	.000018 Amp		YES	90 ns		YES
K8S2915EBC-FE7E0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		70 mA	8388608 words	1.8	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					85 Cel		3-STATE	8MX16	8M	-25 Cel		NO		YES	BOTTOM	HARDWARE	R-PBGA-B44		1.95 V		100000 Write/Erase Cycles	108 MHz				BOTTOM	134217728 bit	1.7 V					NOR TYPE	.00005 Amp		YES	70 ns	1.8	YES
K8C5515ETM-FE1E0	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel			16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM		R-PBGA-B167	3						Not Qualified		TOP	268435456 bit					240	NOR TYPE	.00002 Amp		YES	100 ns		YES
KFN8GH6Q4M-DEB8T	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		256K	40 mA	536870912 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel			512MX16	512M	-30 Cel	2K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63	3						Not Qualified			8589934592 bit			2K	e1	260	MLC NAND TYPE	.0001 Amp			76 ns		NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.