Samsung Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K8S1015EBC-SE1D0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM		R-PBGA-B64		1.95 V	1 mm				Not Qualified	BOTTOM	536870912 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp		YES	100 ns	1.8	YES
K8S5615EBC-DE1F0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		7.7 mm		100 ns	1.8
K8S2615ETE-FE7D0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm				Not Qualified	TOP	134217728 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K8S6615ETD-SE7D0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm				Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K8C5515EBM-DE1CT	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM		R-PBGA-B167							Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8D6316UTM-FI09	Samsung	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	4194304 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM		R-PBGA-B48							Not Qualified	TOP	67108864 bit							NOR TYPE	.00003 Amp		YES	90 ns		YES
KFM2G16Q2M-DEB60	Samsung	FLASH	COMMERCIAL EXTENDED	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	64K	30 mA	134217728 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		128MX16	128M	-30 Cel	2K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63	2	1.95 V	1 mm			10 mm	Not Qualified		2147483648 bit	1.7 V		1K	e1			SLC NAND TYPE	.00005 Amp	13 mm		76 ns	1.8	NO
K8S2815EBE-SE7E0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm				Not Qualified	BOTTOM	134217728 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K8A5615EZC-DC1D0	Samsung
K8A6415ETB-FC7B0	Samsung	FLASH	COMMERCIAL		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY					70 Cel		4MX16	4M	0 Cel			TIN LEAD		BOTTOM		X-PBGA-B	3	1.95 V					Not Qualified		67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0		240					90 ns	1.8
K8S5615EZC-SC1D0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel		16MX16	16M	0 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified	BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		7.7 mm		100 ns	1.8
K8D6316UTM-LC090	Samsung	FLASH	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48	2	3.6 V	1 mm			6 mm	Not Qualified	TOP	67108864 bit	2.7 V			e1			NOR TYPE	.00003 Amp	9 mm	YES	90 ns	2.7	YES
K8S2815ETE-DC7ET	Samsung
K8P3215UQB-DE4BT	Samsung	FLASH	OTHER	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	.8 mm	85 Cel		2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM		R-PBGA-B48	3						Not Qualified	BOTTOM/TOP	33554432 bit			8			260	NOR TYPE	.00003 Amp		YES	60 ns		YES
K8D6316UTMDI0900	Samsung	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8		.8 mm	85 Cel		4MX16	4M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B48	2	3.6 V	1 mm			6 mm	Not Qualified	TOP	67108864 bit	2.7 V			e1			NOR TYPE		9 mm		90 ns	2.7
K9PDG08U5D-LCB00	Samsung	FLASH	COMMERCIAL	52	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					70 Cel		8GX8	8G	0 Cel					BOTTOM		R-PBGA-B52		3.6 V	1 mm			14 mm			68719476736 bit	2.7 V						SLC NAND TYPE		18 mm			3.3
KFG5616Q1A-PEB5	Samsung	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		32K	40 mA	16777216 words	1.8	NO	1.8	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel		16MX16	16M	-30 Cel	512	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	1						Not Qualified		262144 bit			512	e3			SLC NAND TYPE	.00005 Amp			14.5 ns		NO
K9K1G08B0B-GCB00	Samsung	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K	20 mA	134217728 words	2.7	NO	2.7	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	70 Cel		128MX8	128M	0 Cel	8K	YES		YES	BOTTOM		R-PBGA-B63		2.9 V	1.2 mm			8.5 mm	Not Qualified		1073741824 bit	2.5 V		512				SLC NAND TYPE	.00005 Amp	13.5 mm		30 ns	2.7	NO
K8F5715ETM-SC1DT	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM		R-PBGA-B44							Not Qualified	TOP	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8S3215ETF-SE7BT	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel	3-STATE	2MX16	2M	-25 Cel	8,63	YES		YES	BOTTOM		R-PBGA-B44	3	1.95 V	1 mm	100000 Write/Erase Cycles		5 mm	Not Qualified	TOP	33554432 bit	1.7 V					260	NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K9K8G08U0A-PIB0T	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	35 mA	1073741824 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel		1GX8	1G	-40 Cel	8K	YES	TIN BISMUTH	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified		8589934592 bit	2.7 V	CONTAINS ADDITIONAL 256M BIT SPARE MEMORY	2K	e6		260		.0001 Amp	18.4 mm		20 ns	2.7	NO
K9K8G08U0F-5IB00	Samsung	FLASH	INDUSTRIAL	63	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		1GX8	1G	-40 Cel					BOTTOM		S-PBGA-B63		3.6 V	1 mm			9 mm			8589934592 bit	2.7 V						SLC NAND TYPE		11 mm			2.7
K8A6215ETC-DC7C0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel		4MX16	4M	0 Cel					BOTTOM		R-PBGA-B88		1.95 V	1.1 mm			8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11 mm		70 ns	1.8
KFG5616U1A-DIB5T	Samsung	FLASH	INDUSTRIAL	67	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		32K	40 mA	16777216 words	3.3	NO	3.3	16	GRID ARRAY, FINE PITCH	BGA67,8X10,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B67	3						Not Qualified		262144 bit			512	e1		260	SLC NAND TYPE	.00008 Amp			14.5 ns		NO
K8C1215ETM-FC1E0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	70 Cel		32MX16	32M	0 Cel			TIN LEAD		BOTTOM		R-PBGA-B167		1.95 V	1.4 mm			10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e0			NOR TYPE		14 mm		110 ns	1.8
K8S2615EBE-DC7CT	Samsung
K9K1208D0C-GIB0	Samsung	FLASH	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K	20 mA	67108864 words	2.65	NO	2.65	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		64MX8	64M	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63	1						Not Qualified		536870912 bit			512					.00005 Amp			30 ns		NO
K8A6215EBC-HE7B0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM		R-PBGA-B88		1.95 V	1.1 mm			8 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11 mm		70 ns	1.8
K9F6408U0C-HCB0T	Samsung	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K	20 mA	8388608 words	3.3	NO	3.3	8	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	.8 mm	70 Cel		8MX8	8M	0 Cel	1K	YES	MATTE TIN	YES	BOTTOM		R-PBGA-B48	1						Not Qualified		67108864 bit			512	e3				.00005 Amp			35 ns		NO
KM29W16000AIT	Samsung	FLASH	INDUSTRIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	40 mA	2097152 words	5	NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories	.8 mm	85 Cel		2MX8	2M	-40 Cel	512	YES	TIN LEAD	YES	DUAL		R-PDSO-G40		5.5 V	1.2 mm			10.16 mm	Not Qualified		16777216 bit	2.7 V	CONTAINS ADDITIONAL 512K BIT NAND FLASH	256	e0			SLC NAND TYPE	.00005 Amp	18.41 mm		45 ns	2.7	NO
K9K4G08Q0M-YCB00	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			536870912 words	1.8			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		512MX8	512M	0 Cel					DUAL		R-PDSO-G48		1.95 V	1.2 mm			12 mm	Not Qualified		4294967296 bit	1.7 V	CONTAINS ADDITIONAL 128M BIT SPARE MEMORY							18.4 mm		30 ns	1.8
K8C5615ETM-FC1C0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B167		1.95 V	1.4 mm			10.5 mm	Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0			NOR TYPE	.00002 Amp	14 mm	YES	100 ns	1.8	YES
K8D3216UTCFI0800	Samsung	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8		.8 mm	85 Cel		2MX16	2M	-40 Cel					BOTTOM		R-PBGA-B48		3.6 V	1 mm			6 mm	Not Qualified	TOP	33554432 bit	2.7 V						NOR TYPE		8.5 mm		80 ns	2.7
K8D1716UTC-YC07T	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	50 mA	1048576 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel		1MX16	1M	0 Cel	8,31	YES	TIN SILVER COPPER	YES	DUAL		R-PDSO-G48	3						Not Qualified	TOP	16777216 bit				e1			NOR TYPE	.000018 Amp		YES	70 ns		YES
K8S6815EBD-HE7E0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm					BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K8S2615ETE-FE7B0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm				Not Qualified	TOP	134217728 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K8S5715EZB-SE1ET	Samsung
KM29V64001T	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	40 mA	8388608 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories	.8 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	1K	YES	TIN LEAD	YES	DUAL		R-PDSO-G40		3.6 V	1.2 mm			10.16 mm	Not Qualified		67108864 bit	3 V		512	e0				.0001 Amp	18.41 mm		35 ns	3	NO
K8D6316UTM-TC07T	Samsung	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	4194304 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES		YES	BOTTOM		R-PBGA-B48							Not Qualified	TOP	67108864 bit							NOR TYPE	.00003 Amp		YES	70 ns		YES
K9F2G08U0C-BIB0T	Samsung	FLASH	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	35 mA	268435456 words	3.3	NO	3.3	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES		YES	BOTTOM		R-PBGA-B63							Not Qualified		2147483648 bit			2K				SLC NAND TYPE	.00008 Amp			25 ns		NO
K8S2715EBC-FE7E0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		70 mA	8388608 words	1.8	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					85 Cel	3-STATE	8MX16	8M	-25 Cel		NO		YES	BOTTOM	HARDWARE	R-PBGA-B44		1.95 V		100000 Write/Erase Cycles	108 MHz			BOTTOM	134217728 bit	1.7 V						NOR TYPE	.00005 Amp		YES	70 ns	1.8	YES
K8S2815EBE-DC7DT	Samsung
K8D6316UTM-YI07	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	50 mA	4194304 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	Tin/Lead (Sn/Pb)	YES	DUAL		R-PDSO-G48							Not Qualified	TOP	67108864 bit				e0			NOR TYPE	.00003 Amp		YES	70 ns		YES
K8P3215UQB-EC4DT	Samsung	FLASH	COMMERCIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	70 Cel		2MX16	2M	0 Cel	16,62	YES		YES	BOTTOM		S-PBGA-B64	3						Not Qualified	BOTTOM/TOP	33554432 bit			8			260	NOR TYPE	.00003 Amp		YES	70 ns		YES
K9F2G16Q0M-YIB0	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		64K	15 mA	134217728 words	1.8	NO	1.8	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel		128MX16	128M	-40 Cel	2K	YES	Tin/Lead (Sn/Pb)	YES	DUAL		R-PDSO-G48							Not Qualified		2147483648 bit			1K	e0				.00005 Amp			45 ns		NO
K8S1215EZC-DE1C0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel		32MX16	32M	-25 Cel	512	YES			BOTTOM		R-PBGA-B64		1.95 V	1 mm				Not Qualified		536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp		YES	100 ns	1.8	YES
K8F1215EBM-SC1C0	Samsung	FLASH	COMMERCIAL	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel		32MX16	32M	0 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B64	2	1.95 V	1 mm			9 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1			NOR TYPE		11 mm		110 ns	1.8
K8S1015ETC-SE1D0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM		R-PBGA-B64		1.95 V	1 mm				Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp		YES	100 ns	1.8	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.