Samsung Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K8S2615EBE-DC7B0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	70 Cel		8MX16	8M	0 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm				Not Qualified	BOTTOM	134217728 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K9K1208U0A-YCB0	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	25 mA	67108864 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		64MX8	64M	0 Cel	4K	YES	TIN LEAD	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified		536870912 bit	2.7 V		512	e0				.00005 Amp	18.4 mm		35 ns	2.7	NO
K8D6316UTM-TI08	Samsung	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	4194304 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM		R-PBGA-B48							Not Qualified	TOP	67108864 bit							NOR TYPE	.00003 Amp		YES	80 ns		YES
K8A5715EZC-FE1FT	Samsung
K8A6415ETB-DE7C0	Samsung	FLASH	OTHER		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY						85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER		BOTTOM		X-PBGA-B	3	1.95 V					Not Qualified		67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1		260					80 ns	1.8
K8C1215EBM-DE1F0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH					.8 mm	85 Cel		32MX16	32M	-25 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B167	2	1.95 V	1.4 mm			10.5 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1			NOR TYPE		14 mm		110 ns	1.8
K8A6415EBC-HE7CT	Samsung	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel		4MX16	4M	-25 Cel	8,127	YES			BOTTOM		R-PBGA-B88						8 mm	Not Qualified	BOTTOM	67108864 bit			8				NOR TYPE	.00005 Amp	11 mm	YES	70 ns		YES
K8S6815EBD-DC7E0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	70 Cel		4MX16	4M	0 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm					BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K9K1G08Q0A-YCB0	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K	20 mA	134217728 words	1.8	NO	1.8	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		128MX8	128M	0 Cel	8K	YES	Tin/Lead (Sn/Pb)	YES	DUAL		R-PDSO-G48							Not Qualified		1073741824 bit			512	e0				.0001 Amp			30 ns		NO
K8S2815ETC-FE7ET	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		8MX16	8M	-25 Cel	8, 255	YES		YES	BOTTOM		R-PBGA-B44							Not Qualified	TOP	134217728 bit							NOR TYPE	.00005 Amp		YES	70 ns		YES
K8D1716UBC-PC070	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		1MX16	1M	0 Cel	8,31	YES	TIN BISMUTH	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V			e6			NOR TYPE	.000018 Amp	18.4 mm	YES	70 ns	2.7	YES
K8C1215ETM-FE1D0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32		Flash Memories		.8 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B167	3	1.95 V	1.4 mm			10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e0		240	NOR TYPE	.00002 Amp	14 mm	YES	110 ns	1.8	YES
K8F5615ETM-SE1C0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B44	2	1.95 V	1 mm			8 mm	Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE	.00002 Amp	9 mm	YES	100 ns	1.8	YES
K9F4G08U0M-PCB0	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	30 mA	536870912 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		512MX8	512M	0 Cel	4K	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	1						Not Qualified		4294967296 bit			2K	e3				.00005 Amp			25 ns		NO
K8A6315EBC-HC7B0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.8 mm	70 Cel		4MX16	4M	0 Cel					BOTTOM		R-PBGA-B88		1.95 V	1.1 mm			8 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11 mm		70 ns	1.8
K8A6415EBC-HC7E0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES			BOTTOM		R-PBGA-B88	3	1.95 V	1.1 mm			8 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8			260	NOR TYPE	.00005 Amp	11 mm	YES	70 ns	1.8	YES
K9T1G08U0M-FIB0	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K	20 mA	134217728 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20		Flash Memories		.5 mm	85 Cel		128MX8	128M	-40 Cel	8K	YES		YES	DUAL		R-PDSO-G48							Not Qualified		1073741824 bit			512					.00005 Amp			45 ns		NO
K8P6415UQB-PE4BT	Samsung	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-25 Cel	16,126	YES		YES	DUAL		R-PDSO-G48	3						Not Qualified	BOTTOM/TOP	67108864 bit			8			260	NOR TYPE	.00003 Amp		YES	60 ns		YES
K8P6415UQB-PE4B	Samsung	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-25 Cel	16,126	YES		YES	DUAL		R-PDSO-G48	3						Not Qualified	BOTTOM/TOP	67108864 bit			8			260	NOR TYPE	.00003 Amp		YES	60 ns		YES
K8C1115EBM-DE1ET	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories		.8 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM		R-PBGA-B167							Not Qualified	BOTTOM	536870912 bit							NOR TYPE	.00002 Amp		YES	110 ns		YES
K8S3215EBF-SC7C0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	70 Cel	3-STATE	2MX16	2M	0 Cel	8,63	YES		YES	BOTTOM		R-PBGA-B44	3	1.95 V	1 mm	100000 Write/Erase Cycles		5 mm	Not Qualified	BOTTOM	33554432 bit	1.7 V					260	NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K8C1015ETM-FE1D0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32		Flash Memories		.8 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM		R-PBGA-B167	3	1.95 V	1.4 mm			10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				240	NOR TYPE	.00002 Amp	14 mm	YES	110 ns	1.8	YES
K8P3215UQB-EE4A0	Samsung	FLASH	COMMERCIAL EXTENDED	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.2 mm			11 mm	Not Qualified	BOTTOM/TOP	33554432 bit	2.7 V		8			260	NOR TYPE	.00003 Amp	13 mm	YES	55 ns	2.7	YES
K8S5415ETB-FE1D0	Samsung
K8A2815EBM-TC7B	Samsung	FLASH	COMMERCIAL	64	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,8X8,32		Flash Memories		.8 mm	70 Cel		8MX16	8M	0 Cel	8, 255	YES	Tin/Lead (Sn/Pb)	YES	BOTTOM		S-PBGA-B64							Not Qualified	BOTTOM	134217728 bit				e0			NOR TYPE	.00005 Amp		YES	90 ns		YES
K9F2G08Q0M-YIB00	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	1.8			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		256MX8	256M	-40 Cel					DUAL		R-PDSO-G48		1.95 V	1.2 mm			12 mm	Not Qualified		2147483648 bit	1.7 V	CONTAINS ADDITIONAL 64M BIT NAND FLASH					SLC NAND TYPE		18.4 mm		30 ns	1.8
K9F6408Q0C-HCB00	Samsung	FLASH	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	70 Cel		8MX8	8M	0 Cel					BOTTOM		R-PBGA-B48		1.95 V	1 mm			6 mm	Not Qualified		67108864 bit	1.7 V	CONTAINS ADDITIONAL 2M BIT SPARE MEMORY							8.5 mm		35 ns	1.8
K8D3216UTC-YC09T	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	50 mA	2097152 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		2MX16	2M	0 Cel	8,63	YES		YES	DUAL		R-PDSO-G48							Not Qualified	TOP	33554432 bit							NOR TYPE	.000018 Amp		YES	90 ns		YES
K8C1115EBM-DC1F0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32		Flash Memories		.8 mm	70 Cel		32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM		R-PBGA-B167		1.95 V	1.4 mm			10.5 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	14 mm	YES	110 ns	1.8	YES
K8C5515ETM-FE1F0	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories		.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM		R-PBGA-B167	3						Not Qualified	TOP	268435456 bit						240	NOR TYPE	.00002 Amp		YES	100 ns		YES
K8C5515EBM-DC1E0	Samsung	FLASH	COMMERCIAL	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories		.8 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM		R-PBGA-B167							Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8A3215ETE-FC7B0	Samsung																																						3														240
K8S2715ETC-DC7E0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		70 mA	8388608 words	1.8	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH						70 Cel	3-STATE	8MX16	8M	0 Cel		NO		YES	BOTTOM	HARDWARE	R-PBGA-B44		1.95 V		100000 Write/Erase Cycles	108 MHz			TOP	134217728 bit	1.7 V						NOR TYPE	.00005 Amp		YES	70 ns	1.8	YES
K8S2815EBC-SC7E0	Samsung	FLASH	COMMERCIAL	44	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS	4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY	BGA44,8X14,20		Flash Memories		.5 mm	70 Cel		8MX16	8M	0 Cel	8, 255	YES		YES	BOTTOM		R-PBGA-B44	3	1.95 V					Not Qualified	BOTTOM	134217728 bit	1.7 V					260	NOR TYPE	.00005 Amp		YES	70 ns	1.8	YES
K8A3215ETE-DC7B	Samsung	FLASH	COMMERCIAL		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY						70 Cel		2MX16	2M	0 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B	3	1.95 V					Not Qualified		33554432 bit	1.7 V			e1		260					90 ns	1.8
K8D3216UTC-TI090	Samsung	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM		R-PBGA-B48		3.6 V	1 mm			6 mm	Not Qualified	TOP	33554432 bit	2.7 V				30	240	NOR TYPE	.000018 Amp	8.5 mm	YES	90 ns	2.7	YES
K9WAG08U1F-SCB00	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2147483648 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		2GX8	2G	0 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm			17179869184 bit	2.7 V						SLC NAND TYPE		18.4 mm			2.7
K8A3215ETE-FE7C	Samsung	FLASH	COMMERCIAL EXTENDED		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY						85 Cel		2MX16	2M	-25 Cel			TIN LEAD		BOTTOM		R-PBGA-B	3	1.95 V					Not Qualified		33554432 bit	1.7 V			e0		240					80 ns	1.8
KFM1216Q2M-DCB00	Samsung	FLASH	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	70 Cel		32MX16	32M	0 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B48	2	1.95 V	1 mm			9.5 mm	Not Qualified		536870912 bit	1.7 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE		e1					12 mm		76 ns	1.8
K8D3216UBC-TC08	Samsung	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	70 Cel		2MX16	2M	0 Cel	8,63	YES	Tin/Lead (Sn/Pb)	YES	BOTTOM		R-PBGA-B48							Not Qualified	BOTTOM	33554432 bit				e0			NOR TYPE	.000018 Amp		YES	80 ns		YES
K8D3216UBCDI0800	Samsung	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		2MX16	2M	-40 Cel					BOTTOM		R-PBGA-B48		3.6 V	1 mm			6 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V						NOR TYPE		8.5 mm		80 ns	2.7
K8C5715EBM-FE1D0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32		Flash Memories		.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B167		1.95 V	1.4 mm			10.5 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0			NOR TYPE	.00002 Amp	14 mm	YES	100 ns	1.8	YES
K8S5415EBC-DC1D0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	70 Cel		16MX16	16M	0 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		7.7 mm		100 ns	1.8
KM29N16000ATS	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	50 mA	2097152 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories	10	.8 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	512	YES	TIN LEAD	YES	DUAL		R-PDSO-G40		5.5 V	1.2 mm			10.16 mm	Not Qualified		16777216 bit	4.5 V	HARDWARE DATA PROTECTION; 1M PROGRAM/ERASE CYCLES; DATA RETENTION 10 YEARS; BLOCK ERASE	256	e0			SLC NAND TYPE	.0001 Amp	18.41 mm		45 ns	5	NO
K8A6415EBC-DC7E	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES			BOTTOM		R-PBGA-B88						8 mm	Not Qualified	BOTTOM	67108864 bit			8				NOR TYPE	.00005 Amp	11 mm	YES	70 ns		YES
K8S3215EBF-DE7D0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel	3-STATE	2MX16	2M	-25 Cel	8,63	YES		YES	BOTTOM		R-PBGA-B44		1.95 V	1 mm	100000 Write/Erase Cycles		5 mm	Not Qualified	BOTTOM	33554432 bit	1.7 V						NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
KM29N32000T	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	40 mA	4194304 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories	10	.8 mm	70 Cel	3-STATE	4MX8	4M	0 Cel	512	YES	TIN LEAD	YES	DUAL		R-PDSO-G40		5.5 V	1.2 mm			10.16 mm	Not Qualified		33554432 bit	4.5 V	HARDWARE DATA PROTECTION; 1M PROGRAM/ERASE CYCLES; DATA RETENTION 10 YEARS; BLOCK ERASE	512	e0				.0001 Amp	18.41 mm		35 ns	5	NO
K8F5715EBM-SC1F0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B44	2	1.95 V	1 mm			8 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE	.00002 Amp	9 mm	YES	100 ns	1.8	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.