Samsung Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K8S2815EBC-FE7E	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel		8MX16	8M	-25 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44						Not Qualified	BOTTOM	134217728 bit						NOR TYPE	.00005 Amp		YES	70 ns		YES
KM29W16000BTS	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words				8	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel		2MX8	2M	0 Cel					DUAL	R-PDSO-G40		5.5 V	1.2 mm		10.16 mm	Not Qualified		16777216 bit	2.7 V					SLC NAND TYPE		18.41 mm		45 ns	2.7
K8F5715ETM-SE1ET	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B44						Not Qualified	TOP	268435456 bit						NOR TYPE	.00002 Amp		YES	100 ns		YES
K8D3216UTC-FC08	Samsung	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel		2MX16	2M	0 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B48						Not Qualified	TOP	33554432 bit						NOR TYPE	.000018 Amp		YES	80 ns		YES
K8C5415EBM-DE1CT	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167						Not Qualified	BOTTOM	268435456 bit						NOR TYPE	.00002 Amp		YES	100 ns		YES
KFN8GH6Q4M-DEB8	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		256K	40 mA	536870912 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		512MX16	512M	-30 Cel	2K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3					Not Qualified		8589934592 bit			2K	e1	260	MLC NAND TYPE	.0001 Amp			76 ns		NO
K8S5515ETC-DE1D0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm			Not Qualified	TOP	268435456 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE				100 ns	1.8
K9F3208W0A-TCS0	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	40 mA	4194304 words	3	NO	3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories	.8 mm	70 Cel		4MX8	4M	0 Cel	512	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		5.5 V	1.2 mm		10.16 mm	Not Qualified		33554432 bit	2.7 V		512	e0			.00005 Amp	18.41 mm		35 ns	2.7	NO
K8F5715ETM-FE1D	Samsung	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B88						Not Qualified	TOP	268435456 bit						NOR TYPE	.00002 Amp		YES	100 ns		YES
K8D3216UTC-YC07T	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	50 mA	2097152 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel		2MX16	2M	0 Cel	8,63	YES		YES	DUAL	R-PDSO-G48						Not Qualified	TOP	33554432 bit						NOR TYPE	.000018 Amp		YES	70 ns		YES
K8D3216UTC-DI09T	Samsung	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B48						Not Qualified	TOP	33554432 bit						NOR TYPE	.000018 Amp		YES	90 ns		YES
K8S3215EBF-FC7CT	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel	3-STATE	2MX16	2M	0 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B44		1.95 V	1 mm	100000 Write/Erase Cycles	5 mm	Not Qualified	BOTTOM	33554432 bit	1.7 V					NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K8F1215ETM-SC1D	Samsung	FLASH	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel		32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B64						Not Qualified	TOP	536870912 bit						NOR TYPE	.00002 Amp		YES	110 ns		YES
KM29U128T	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	16777216 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	.5 mm	70 Cel		16MX8	16M	0 Cel	1K	YES	TIN LEAD	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		134217728 bit	2.7 V	CONTAINS ADDITIONAL 4M BIT NAND FLASH	512	e0		SLC NAND TYPE	.00005 Amp	18.4 mm		35 ns	2.7	NO
K8C5515EBM-DE1DT	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167						Not Qualified	BOTTOM	268435456 bit						NOR TYPE	.00002 Amp		YES	100 ns		YES
K8S3215ETF-SE7C	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel	3-STATE	2MX16	2M	-25 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B44	3	1.95 V	1 mm	100000 Write/Erase Cycles	5 mm	Not Qualified	TOP	33554432 bit	1.7 V				260	NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K8S5615EBB-DC1C0	Samsung
K8S5715EZC-FE1D0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm		6.2 mm	Not Qualified	BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE		7.7 mm		100 ns	1.8
K8S5615ETA-DE7CT	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel		16MX16	16M	-25 Cel	8,511	YES			BOTTOM	R-PBGA-B44						Not Qualified	TOP	268435456 bit						NOR TYPE	.00007 Amp		YES	70 ns		YES
K8C1015EBM-DC1DT	Samsung	FLASH	COMMERCIAL	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel		32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167						Not Qualified	BOTTOM	536870912 bit						NOR TYPE	.00002 Amp		YES	110 ns		YES
K8C1015EBM-FC1C0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167	3	1.95 V	1.4 mm		10.5 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE			240	NOR TYPE	.00002 Amp	14 mm	YES	110 ns	1.8	YES
K8P2815UQC-JI4C0	Samsung	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel		8MX16	8M	-40 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64		3.6 V	1.3 mm		11 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	BOTTOM BOOT BLOCK, TOP BOOT BLOCK	8	e1	260	NOR TYPE	.00003 Amp	13 mm	YES	65 ns	3	YES
K8S5615EBB-FC1CT	Samsung
K8S5515EZB-DE1E0	Samsung
KFG1G16U2C-AIB6	Samsung	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			67108864 words	3.3			16	GRID ARRAY				.8 mm	85 Cel		64MX16	64M	-40 Cel					BOTTOM	R-PBGA-B63	3	3.6 V	1 mm		10 mm	Not Qualified	BOTTOM	1073741824 bit	2.7 V	BOTTOM BOOT BLOCK			260			13 mm		76 ns	3.3
K8S5615EZC-SE1F0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm		6.2 mm	Not Qualified	BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE		7.7 mm		100 ns	1.8
K8F5615ETM-FC1DT	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B88						Not Qualified	TOP	268435456 bit						NOR TYPE	.00002 Amp		YES	100 ns		YES
K8C5615EBM-FC1E0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B167		1.95 V	1.4 mm		10.5 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0		NOR TYPE	.00002 Amp	14 mm	YES	100 ns	1.8	YES
K8C1115ETM-DE1D0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B167		1.95 V	1.4 mm		10.5 mm		TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						14 mm		110 ns	1.8
K8S5515EZC-SC1C0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel		16MX16	16M	0 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm		6.2 mm	Not Qualified	BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE		7.7 mm		100 ns	1.8
K9K1G08Q0A-PIB0	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K	20 mA	134217728 words	1.8	NO	1.8	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel		128MX8	128M	-40 Cel	8K	YES		YES	DUAL	R-PDSO-G48						Not Qualified		1073741824 bit			512				.0001 Amp			30 ns		NO
K8C5515EBM-FC1F	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	70 Cel		16MX16	16M	0 Cel					BOTTOM	R-PBGA-B167		1.95 V	1.4 mm		10.5 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V					NOR TYPE		14 mm		100 ns	1.8
K8D3216UBC-YI07T	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	50 mA	2097152 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	DUAL	R-PDSO-G48						Not Qualified	BOTTOM	33554432 bit						NOR TYPE	.000018 Amp		YES	70 ns		YES
K8D3216UTCLC0700	Samsung	FLASH	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8		.8 mm	70 Cel		2MX16	2M	0 Cel					BOTTOM	R-PBGA-B48		3.6 V	1 mm		6 mm	Not Qualified	TOP	33554432 bit	2.7 V					NOR TYPE		8.5 mm		70 ns	2.7
K8S5415ETB-DC1D0	Samsung
K8S1215ETC-DE1F0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B64		1.95 V	1 mm				TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE				100 ns	1.8
K8A5615ETC-FC1D0	Samsung
KFG1216U2A-DEB60	Samsung	FLASH	OTHER	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3.3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-30 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	2	3.6 V	1 mm		9.5 mm	Not Qualified		536870912 bit	2.7 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE		e1				12 mm		76 ns	2.7
K8D1716UBC-PC07T	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	50 mA	1048576 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel		1MX16	1M	0 Cel	8,31	YES	TIN SILVER COPPER	YES	DUAL	R-PDSO-G48	3					Not Qualified	BOTTOM	16777216 bit				e1		NOR TYPE	.000018 Amp		YES	70 ns		YES
K8F1315EBM-SC1D0	Samsung	FLASH	COMMERCIAL	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel		32MX16	32M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	2	1.95 V	1 mm		9 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1		NOR TYPE		11 mm		110 ns	1.8
K9K1G16U0A-PIB00	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			16777216 words	3.3			16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		16MX16	16M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		268435456 bit	2.7 V	CONTAINS ADDITIONAL 32M BIT NAND FLASH				SLC NAND TYPE		18.4 mm		30 ns	2.7
KFM1216Q2M-DCD00	Samsung	FLASH	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel		32MX16	32M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48	2	1.95 V	1 mm		9.5 mm	Not Qualified		536870912 bit	1.7 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE		e1				12 mm		76 ns	1.8
K8D1716UBC-FC07T	Samsung	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	1048576 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel		1MX16	1M	0 Cel	8,31	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3					Not Qualified	BOTTOM	16777216 bit				e1		NOR TYPE	.000018 Amp		YES	70 ns		YES
KFH1G16D2M-DEB	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	20 mA	67108864 words	2.65	NO	2.65	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		64MX16	64M	-30 Cel	1K	YES		YES	BOTTOM	R-PBGA-B63						Not Qualified		1073741824 bit			1K			MLC NAND TYPE	.00005 Amp			14.5 ns		NO
K8S3215EBF-FE7ET	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel	3-STATE	2MX16	2M	-25 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B44		1.95 V	1 mm	100000 Write/Erase Cycles	5 mm	Not Qualified	BOTTOM	33554432 bit	1.7 V					NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K8P6415UQB-EE4D0	Samsung	FLASH	OTHER	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel		4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.2 mm		11 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V		8		260	NOR TYPE	.00003 Amp	13 mm	YES	70 ns	2.7	YES
K8S1315EZC-SE1C0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B64		1.95 V	1 mm					536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE				100 ns	1.8
K8C5715EBM-DC1C0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B167	2	1.95 V	1.4 mm		10.5 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1		NOR TYPE	.00002 Amp	14 mm	YES	100 ns	1.8	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.