Samsung Flash Memory 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

K8S2815ETC-FC7B

Samsung

FLASH

COMMERCIAL

44

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

4K,32K

70 mA

8388608 words

1.8

YES

1.8

16

GRID ARRAY, FINE PITCH

BGA44,8X14,20

Flash Memories

.5 mm

70 Cel

8MX16

8M

0 Cel

8, 255

YES

YES

BOTTOM

R-PBGA-B44

Not Qualified

TOP

134217728 bit

NOR TYPE

.00005 Amp

YES

70 ns

YES

K8S2615EBC-DC7E0

Samsung

FLASH

COMMERCIAL

44

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

70 mA

8388608 words

1.8

YES

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

70 Cel

3-STATE

8MX16

8M

0 Cel

NO

YES

BOTTOM

HARDWARE

R-PBGA-B44

1.95 V

100000 Write/Erase Cycles

108 MHz

BOTTOM

134217728 bit

1.7 V

NOR TYPE

.00005 Amp

YES

70 ns

1.8

YES

K8F5615ETM-DC1C0

Samsung

FLASH

COMMERCIAL

88

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

16K,64K

55 mA

16777216 words

1.8

YES

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA88,8X12,32

Flash Memories

.8 mm

70 Cel

16MX16

16M

0 Cel

4,255

YES

TIN SILVER COPPER

YES

BOTTOM

R-PBGA-B88

2

1.95 V

1.2 mm

8 mm

Not Qualified

TOP

268435456 bit

1.7 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

e1

NOR TYPE

.00002 Amp

11 mm

YES

100 ns

1.8

YES

K8C1115EBM-DE1C0

Samsung

FLASH

OTHER

167

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

33554432 words

1.8

16

GRID ARRAY, LOW PROFILE, FINE PITCH

.8 mm

85 Cel

32MX16

32M

-25 Cel

BOTTOM

R-PBGA-B167

1.95 V

1.4 mm

10.5 mm

BOTTOM

536870912 bit

1.7 V

BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

14 mm

110 ns

1.8

KFM2G16Q2A-DEB60

Samsung

FLASH

OTHER

63

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

64K

40 mA

134217728 words

1.8

YES

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA63,10X12,32

Flash Memories

.8 mm

85 Cel

128MX16

128M

-30 Cel

2K

YES

YES

BOTTOM

R-PBGA-B63

3

1.95 V

1 mm

10 mm

Not Qualified

2147483648 bit

1.7 V

SYNCHRONOUS BURST OPERATION IS POSSIBLE

1K

260

SLC NAND TYPE

.00005 Amp

13 mm

70 ns

1.8

NO

K8P2915UQB-DI4BT

Samsung

FLASH

INDUSTRIAL

80

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

4K,32K

55 mA

8388608 words

YES

3/3.3

16

GRID ARRAY, FINE PITCH

BGA80,8X12,32

Flash Memories

.8 mm

85 Cel

8MX16

8M

-40 Cel

16,254

YES

YES

BOTTOM

R-PBGA-B80

Not Qualified

BOTTOM/TOP

134217728 bit

8

NOR TYPE

.00003 Amp

YES

60 ns

YES

K9F2G16Q0M-PCB00

Samsung

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

134217728 words

1.8

16

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

128MX16

128M

0 Cel

DUAL

R-PDSO-G48

2

1.95 V

1.2 mm

12 mm

Not Qualified

2147483648 bit

1.7 V

CONTAINS ADDITIONAL 64M BIT NAND FLASH

SLC NAND TYPE

18.4 mm

30 ns

1.8

K8A3215ETE-FE7B0

Samsung

3

240

K8D1716UBC-DC08

Samsung

FLASH

COMMERCIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

8K,64K

50 mA

1048576 words

3

YES

3/3.3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,32

8

Flash Memories

.8 mm

70 Cel

1MX16

1M

0 Cel

8,31

YES

MATTE TIN

YES

BOTTOM

R-PBGA-B48

1

3.6 V

1 mm

6 mm

Not Qualified

BOTTOM

16777216 bit

2.7 V

e3

NOR TYPE

.000018 Amp

8.5 mm

YES

80 ns

3

YES

K8P2716UZC-JE4C0

Samsung

FLASH

OTHER

64

TBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

128K

55 mA

8388608 words

3

YES

1.8/3.3,3/3.3

16

GRID ARRAY, THIN PROFILE

BGA64,8X8,40

8

Flash Memories

1 mm

85 Cel

8MX16

8M

-25 Cel

128

YES

YES

BOTTOM

R-PBGA-B64

3.6 V

1.2 mm

11 mm

Not Qualified

134217728 bit

2.7 V

8/16

260

NOR TYPE

.00004 Amp

13 mm

YES

65 ns

3

YES

K8D1716UTC-FC080

Samsung

FLASH

COMMERCIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

8K,64K

50 mA

1048576 words

3

YES

3/3.3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,32

8

Flash Memories

.8 mm

70 Cel

1MX16

1M

0 Cel

8,31

YES

YES

BOTTOM

R-PBGA-B48

3.6 V

1 mm

6 mm

Not Qualified

TOP

16777216 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.000018 Amp

8.5 mm

YES

80 ns

2.7

YES

K9W8G08U1M-PCB0T

Samsung

FLASH

COMMERCIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

128K

30 mA

1073741824 words

NO

3/3.3

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

Flash Memories

.5 mm

70 Cel

1GX8

1G

0 Cel

8K

YES

TIN BISMUTH

YES

DUAL

R-PDSO-G48

3

Not Qualified

8589934592 bit

2K

e6

260

.0001 Amp

NO

K8D3216UTC-PC090

Samsung

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8K,64K

50 mA

2097152 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

70 Cel

2MX16

2M

0 Cel

8,63

YES

YES

DUAL

R-PDSO-G48

3

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

33554432 bit

2.7 V

NOR TYPE

.000018 Amp

18.4 mm

YES

90 ns

2.7

YES

K9K1G08U0A-FCB0

Samsung

FLASH

COMMERCIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

16K

30 mA

134217728 words

3.3

NO

3.3

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.71,20

Flash Memories

.5 mm

70 Cel

128MX8

128M

0 Cel

8K

YES

YES

DUAL

R-PDSO-G48

Not Qualified

1073741824 bit

512

.00005 Amp

30 ns

NO

K8A5715EZC-DE1ET

Samsung

K8P6415UQB-PC4C

Samsung

FLASH

COMMERCIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

4K,32K

55 mA

4194304 words

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

Flash Memories

.5 mm

70 Cel

4MX16

4M

0 Cel

16,126

YES

YES

DUAL

R-PDSO-G48

3

Not Qualified

BOTTOM/TOP

67108864 bit

8

260

NOR TYPE

.00003 Amp

YES

65 ns

YES

K9F4G08U0F-SHB00

Samsung

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

PARALLEL

ASYNCHRONOUS

536870912 words

3.3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

105 Cel

512MX8

512M

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

4294967296 bit

2.7 V

SLC NAND TYPE

18.4 mm

2.7

K9K1208Q0C-DIB00

Samsung

FLASH

INDUSTRIAL

63

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

67108864 words

1.8

8

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

85 Cel

64MX8

64M

-40 Cel

BOTTOM

R-PBGA-B63

1.95 V

1.2 mm

9 mm

Not Qualified

536870912 bit

1.7 V

CONTAINS ADDITIONAL 16M BIT NAND FLASH

11 mm

30 ns

1.8

K8D1716UTC-DI09T

Samsung

FLASH

INDUSTRIAL

48

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

8K,64K

50 mA

1048576 words

YES

3/3.3

16

GRID ARRAY, FINE PITCH

BGA48,6X8,32

8

Flash Memories

.8 mm

85 Cel

1MX16

1M

-40 Cel

8,31

YES

TIN SILVER COPPER

YES

BOTTOM

R-PBGA-B48

Not Qualified

TOP

16777216 bit

e1

NOR TYPE

.000018 Amp

YES

90 ns

YES

K8S3215ETF-SC7CT

Samsung

FLASH

COMMERCIAL

44

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4K,32K

70 mA

2097152 words

1.8

YES

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA44,8X14,20

Flash Memories

.5 mm

70 Cel

3-STATE

2MX16

2M

0 Cel

8,63

YES

YES

BOTTOM

R-PBGA-B44

3

1.95 V

1 mm

100000 Write/Erase Cycles

5 mm

Not Qualified

TOP

33554432 bit

1.7 V

260

NOR TYPE

.00005 Amp

7.5 mm

YES

70 ns

1.8

YES

K9WAG08U1A-YIB00

Samsung

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

128K

35 mA

2147483648 words

3.3

NO

3/3.3

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

Flash Memories

.5 mm

85 Cel

2GX8

2G

-40 Cel

16K

YES

YES

DUAL

R-PDSO-G48

1

3.6 V

1.2 mm

12 mm

Not Qualified

17179869184 bit

2.7 V

2K

.0001 Amp

18.4 mm

20 ns

2.7

NO

KM28U800T-T15

Samsung

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

8

SMALL OUTLINE, THIN PROFILE

16

.5 mm

70 Cel

3-STATE

1MX8

1M

0 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

8388608 bit

2.7 V

NOR TYPE

18.4 mm

150 ns

3

K8P2915UQB-DC4A0

Samsung

FLASH

COMMERCIAL

80

BGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4K,32K

55 mA

8388608 words

YES

3/3.3

16

GRID ARRAY

BGA80,8X12,32

Flash Memories

.8 mm

70 Cel

8MX16

8M

0 Cel

16,254

YES

YES

BOTTOM

R-PBGA-B80

3

3.6 V

Not Qualified

BOTTOM/TOP

134217728 bit

2.7 V

8

260

NOR TYPE

.00003 Amp

YES

55 ns

2.7

YES

K8S5415EBB-DE1CT

Samsung

K8S5715ETC-SC1C0

Samsung

FLASH

COMMERCIAL

44

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

55 mA

16777216 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

70 Cel

16MX16

16M

0 Cel

BOTTOM

R-PBGA-B44

1.95 V

1 mm

6.2 mm

Not Qualified

TOP

268435456 bit

1.7 V

TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

NOR TYPE

7.7 mm

100 ns

1.8

KFG1216Q2A-FIB60

Samsung

FLASH

INDUSTRIAL

63

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

33554432 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

85 Cel

32MX16

32M

-40 Cel

TIN LEAD

BOTTOM

R-PBGA-B63

1.95 V

1 mm

9.5 mm

Not Qualified

536870912 bit

1.7 V

SYNCHRONOUS BURST OPERATION IS POSSIBLE

e0

12 mm

76 ns

1.8

K8F5615EBM-DE1DT

Samsung

FLASH

OTHER

88

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

16K,64K

55 mA

16777216 words

1.8

YES

1.8

16

GRID ARRAY, FINE PITCH

BGA88,8X12,32

Flash Memories

.8 mm

85 Cel

16MX16

16M

-25 Cel

4,255

YES

YES

BOTTOM

R-PBGA-B88

Not Qualified

BOTTOM

268435456 bit

NOR TYPE

.00002 Amp

YES

100 ns

YES

K9K1216U0C-DCB0

Samsung

FLASH

COMMERCIAL

63

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

8K

40 mA

33554432 words

NO

3/3.3

16

GRID ARRAY, FINE PITCH

BGA63,10X12,32

Flash Memories

.8 mm

70 Cel

32MX16

32M

0 Cel

4K

YES

TIN LEAD

YES

BOTTOM

R-PBGA-B63

Not Qualified

536870912 bit

256

e0

.00005 Amp

45 ns

NO

K8D3216UBCPI0900

Samsung

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

3

16

SMALL OUTLINE, THIN PROFILE

8

.5 mm

85 Cel

2MX16

2M

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

BOTTOM

33554432 bit

2.7 V

NOR TYPE

18.4 mm

90 ns

2.7

K9F6408U0C-HCB00

Samsung

FLASH

COMMERCIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

8K

20 mA

8388608 words

3.3

NO

3.3

8

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,32

Flash Memories

.8 mm

70 Cel

8MX8

8M

0 Cel

1K

YES

YES

BOTTOM

R-PBGA-B48

3.6 V

1 mm

6 mm

Not Qualified

67108864 bit

2.7 V

CONTAINS ADDITIONAL 2M BIT NAND FLASH

512

NOT SPECIFIED

NOT SPECIFIED

.00005 Amp

8.5 mm

35 ns

2.7

NO

KFG1216Q2B-SEB80

Samsung

FLASH

COMMERCIAL EXTENDED

67

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

64K

40 mA

33554432 words

1.8

NO

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA67,8X10,32

Flash Memories

.8 mm

85 Cel

32MX16

32M

-30 Cel

512

YES

TIN SILVER COPPER

YES

BOTTOM

R-PBGA-B67

3

1.95 V

1 mm

7 mm

Not Qualified

536870912 bit

1.7 V

1K

e1

260

SLC NAND TYPE

.00005 Amp

9 mm

76 ns

1.8

NO

KFG1216U2A-DIB50

Samsung

FLASH

INDUSTRIAL

63

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

64K

40 mA

33554432 words

3.3

NO

3.3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA63,10X12,32

Flash Memories

.8 mm

85 Cel

32MX16

32M

-40 Cel

512

YES

TIN SILVER COPPER

YES

BOTTOM

R-PBGA-B63

3

3.6 V

1 mm

9.5 mm

Not Qualified

536870912 bit

2.7 V

SYNCHRONOUS BURST OPERATION IS POSSIBLE

1K

e1

260

SLC NAND TYPE

.00008 Amp

12 mm

76 ns

2.7

NO

K9K4G08U1M-IIB0

Samsung

FLASH

INDUSTRIAL

52

LGA

PLASTIC/EPOXY

YES

CMOS

NO LEAD

PARALLEL

128K

30 mA

536870912 words

NO

3/3.3

8

GRID ARRAY

LGA52(UNSPEC)

Flash Memories

85 Cel

512MX8

512M

-40 Cel

4K

YES

MATTE TIN

YES

BOTTOM

1

Not Qualified

4294967296 bit

2K

e3

.00005 Amp

30 ns

NO

KFG1G16Q2C-DED60

Samsung

FLASH

OTHER

63

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

1073741824 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

85 Cel

1GX16

1G

-30 Cel

BOTTOM

R-PBGA-B63

1.95 V

1 mm

66 MHz

10 mm

Not Qualified

.00007 ms

BOTTOM

17179869184 bit

1.7 V

13 mm

76 ns

1.8

K8S2815ETC-FE7CT

Samsung

FLASH

OTHER

44

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

4K,32K

70 mA

8388608 words

1.8

YES

1.8

16

GRID ARRAY, FINE PITCH

BGA44,8X14,20

Flash Memories

.5 mm

85 Cel

8MX16

8M

-25 Cel

8, 255

YES

YES

BOTTOM

R-PBGA-B44

Not Qualified

TOP

134217728 bit

NOR TYPE

.00005 Amp

YES

70 ns

YES

K8A6215ETC-HC7C0

Samsung

FLASH

COMMERCIAL

88

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

4194304 words

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

70 Cel

4MX16

4M

0 Cel

BOTTOM

R-PBGA-B88

1.95 V

1.1 mm

8 mm

Not Qualified

TOP

67108864 bit

1.7 V

TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

11 mm

70 ns

1.8

K9T1G08B0M-FIB00

Samsung

FLASH

INDUSTRIAL

48

VSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

134217728 words

2.7

8

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

.5 mm

85 Cel

128MX8

128M

-40 Cel

DUAL

R-PDSO-G48

2.9 V

.7 mm

12 mm

Not Qualified

1073741824 bit

2.5 V

CONTAINS ADDITIONAL 32M BIT SPARE MEMORY

15.4 mm

30 ns

2.7

K8P2915UQB-DE4AT

Samsung

FLASH

OTHER

80

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

4K,32K

55 mA

8388608 words

YES

3/3.3

16

GRID ARRAY, FINE PITCH

BGA80,8X12,32

Flash Memories

.8 mm

85 Cel

8MX16

8M

-25 Cel

16,254

YES

YES

BOTTOM

R-PBGA-B80

Not Qualified

BOTTOM/TOP

134217728 bit

8

NOR TYPE

.00003 Amp

YES

55 ns

YES

K8S5415ETB-DC1CT

Samsung

K8A6415ETC-HC7C0

Samsung

FLASH

COMMERCIAL

88

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

4K,32K

70 mA

4194304 words

1.8

YES

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA88,8X12,32

Flash Memories

.8 mm

70 Cel

4MX16

4M

0 Cel

8,127

YES

BOTTOM

R-PBGA-B88

3

1.95 V

1.1 mm

8 mm

Not Qualified

TOP

67108864 bit

1.7 V

TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

8

260

NOR TYPE

.00005 Amp

11 mm

YES

70 ns

1.8

YES

KFG1G16U2C-DIB60

Samsung

FLASH

INDUSTRIAL

63

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS/ASYNCHRONOUS

64K

65 mA

67108864 words

3.3

NO

3/3.3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA63,10X12,32

Flash Memories

.8 mm

85 Cel

64MX16

64M

-40 Cel

1K

YES

YES

BOTTOM

R-PBGA-B63

3.6 V

1 mm

10 mm

Not Qualified

1073741824 bit

2.7 V

1K

NOT SPECIFIED

NOT SPECIFIED

SLC NAND TYPE

.00008 Amp

13 mm

76 ns

3.3

NO

KM29V16000AT

Samsung

FLASH

COMMERCIAL

40

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4K

20 mA

2097152 words

3.3

NO

3.3,3.3/5

8

SMALL OUTLINE, THIN PROFILE

TSOP40/44,.46,32

Flash Memories

10

.8 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

512

YES

TIN LEAD

YES

DUAL

R-PDSO-G40

3.6 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

3 V

HARDWARE DATA PROTECTION; 1M PROGRAM/ERASE CYCLES; DATA RETENTION 10 YEARS; BLOCK ERASE

256

e0

SLC NAND TYPE

.00005 Amp

18.41 mm

45 ns

3

NO

K8S1115ETC-DE1E0

Samsung

FLASH

OTHER

64

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

16K,64K

70 mA

33554432 words

1.8

YES

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA64,10X14,20

Flash Memories

.5 mm

85 Cel

32MX16

32M

-25 Cel

4,511

YES

YES

BOTTOM

R-PBGA-B64

1.95 V

1 mm

Not Qualified

TOP

536870912 bit

1.7 V

TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

260

NOR TYPE

.00003 Amp

YES

100 ns

1.8

YES

K8F5615EBM-FC1CT

Samsung

FLASH

COMMERCIAL

88

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

16K,64K

55 mA

16777216 words

1.8

YES

1.8

16

GRID ARRAY, FINE PITCH

BGA88,8X12,32

Flash Memories

.8 mm

70 Cel

16MX16

16M

0 Cel

4,255

YES

YES

BOTTOM

R-PBGA-B88

Not Qualified

BOTTOM

268435456 bit

NOR TYPE

.00002 Amp

YES

100 ns

YES

K8P3215UQB-EI4B0

Samsung

FLASH

INDUSTRIAL

64

TBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

4K,32K

55 mA

2097152 words

3

YES

3/3.3

16

GRID ARRAY, THIN PROFILE

BGA64,8X8,40

Flash Memories

1 mm

85 Cel

2MX16

2M

-40 Cel

16,62

YES

TIN SILVER COPPER

YES

BOTTOM

R-PBGA-B64

3

3.6 V

1.2 mm

11 mm

Not Qualified

BOTTOM/TOP

33554432 bit

2.7 V

8

e1

260

NOR TYPE

.00003 Amp

13 mm

YES

60 ns

2.7

YES

K8D3216UTCPC0700

Samsung

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

3

16

SMALL OUTLINE, THIN PROFILE

8

.5 mm

70 Cel

2MX16

2M

0 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

33554432 bit

2.7 V

NOR TYPE

18.4 mm

70 ns

2.7

K8F1215EBM-FE1C

Samsung

FLASH

OTHER

64

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

16K,64K

55 mA

33554432 words

1.8

YES

1.8

16

GRID ARRAY, FINE PITCH

BGA64,10X14,20

Flash Memories

.5 mm

85 Cel

32MX16

32M

-25 Cel

4,511

YES

YES

BOTTOM

R-PBGA-B64

Not Qualified

BOTTOM

536870912 bit

NOR TYPE

.00002 Amp

YES

110 ns

YES

K8S6815ETD-SE7D0

Samsung

FLASH

OTHER

44

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

4194304 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

4MX16

4M

-25 Cel

BOTTOM

R-PBGA-B44

1.95 V

1 mm

TOP

67108864 bit

1.7 V

TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

70 ns

1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.