Samsung Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K8D3216UTCFI0700	Samsung	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8		.8 mm	85 Cel	2MX16	2M	-40 Cel					BOTTOM	R-PBGA-B48		3.6 V	1 mm	6 mm	Not Qualified	TOP	33554432 bit	2.7 V					NOR TYPE		8.5 mm		70 ns	2.7
KLMCG2UCTB-B0410	Samsung	FLASH CARD	OTHER			RECTANGULAR	UNSPECIFIED		1	CMOS			ASYNCHRONOUS			68719476736 words	3.3			8						85 Cel	64GX8	64G	-25 Cel													549755813888 bit		IT ALSO OPERATES AT 1.8 V NOMINAL SUPPLY VOLTAGE									3.3
K8A6215EBC-FC7B0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel	4MX16	4M	0 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm	8 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						11 mm		70 ns	1.8
K8D3216UTC-YC07	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	50 mA	2097152 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel	2MX16	2M	0 Cel	8,63	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48					Not Qualified	TOP	33554432 bit				e0		NOR TYPE	.000018 Amp		YES	70 ns		YES
K8S6615EBD-DC7E0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel	4MX16	4M	0 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm			BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE								70 ns	1.8
KFG5616Q1A-DEB60	Samsung	FLASH	OTHER	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel	16MX16	16M	-30 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B67	2	1.95 V	1 mm	7 mm	Not Qualified		268435456 bit	1.7 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE		e1				9 mm		76 ns	1.8
K8A6515ETC-SC7E0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel	4MX16	4M	0 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm	8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						11 mm		70 ns	1.8
K9W4G08U1M-YIB0	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	30 mA	268435456 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel	256MX8	256M	-40 Cel	2K	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	3				Not Qualified		2147483648 bit			2K	e0	240		.0001 Amp					NO
K9F2G08R0A-JCB0T	Samsung	FLASH	COMMERCIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	30 mA	268435456 words	1.8	NO	1.8	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	70 Cel	256MX8	256M	0 Cel	2K	YES		YES	BOTTOM	R-PBGA-B63					Not Qualified		2147483648 bit			2K				.00005 Amp			30 ns		NO
K9QCG08U5A-9IB00	Samsung	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		256K	30 mA	8589934592 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.63,20		Flash Memories	.5 mm	85 Cel	8GX8	8G	-40 Cel	32K	YES		YES	DUAL	R-PDSO-G56					Not Qualified		65536 bit			4K				.0001 Amp			20 ns		NO
KFG1216U2A-DED50	Samsung	FLASH	OTHER	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3.3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel	32MX16	32M	-30 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	2	3.6 V	1 mm	9.5 mm	Not Qualified		536870912 bit	2.7 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE		e1				12 mm		76 ns	2.7
K8A6215EBC-DC7C0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel	4MX16	4M	0 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm	8 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE						11 mm		70 ns	1.8
K8S2815ETC-FE7E0	Samsung	FLASH	OTHER	44	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS	4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel	8MX16	8M	-25 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44	1	1.95 V			Not Qualified	TOP	134217728 bit	1.7 V					NOR TYPE	.00005 Amp		YES	70 ns	1.8	YES
KFM1G16Q2A-DEB60	Samsung	FLASH	OTHER	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	40 mA	67108864 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel	64MX16	64M	-30 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	2	1.95 V	1 mm	10 mm	Not Qualified		1073741824 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	1K	e1		SLC NAND TYPE	.00005 Amp	13 mm		76 ns	1.8	NO
K8F5615EBM-FC1D0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	70 Cel	16MX16	16M	0 Cel	4,255	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B88		1.95 V	1.2 mm	8 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0		NOR TYPE	.00002 Amp	11 mm	YES	100 ns	1.8	YES
K8D3216UBCTC0700	Samsung	FLASH	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8		.8 mm	70 Cel	2MX16	2M	0 Cel					BOTTOM	R-PBGA-B48		3.6 V	1 mm	6 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V					NOR TYPE		8.5 mm		70 ns	2.7
K8D3216UTCDI0800	Samsung	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8		.8 mm	85 Cel	2MX16	2M	-40 Cel					BOTTOM	R-PBGA-B48		3.6 V	1 mm	6 mm	Not Qualified	TOP	33554432 bit	2.7 V					NOR TYPE		8.5 mm		80 ns	2.7
K8D6316UTMLC0700	Samsung	FLASH	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8		.8 mm	70 Cel	4MX16	4M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48	2	3.6 V	1 mm	6 mm	Not Qualified	TOP	67108864 bit	2.7 V			e1		NOR TYPE		9 mm		70 ns	2.7
KFG5616Q1A-DEB5	Samsung	FLASH	OTHER	67	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		32K	40 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA67,8X10,32		Flash Memories	.8 mm	85 Cel	16MX16	16M	-30 Cel	512	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B67	1				Not Qualified		262144 bit			512	e3		SLC NAND TYPE	.00005 Amp			14.5 ns		NO
K8F1215EBM-SE1C0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel	32MX16	32M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	2	1.95 V	1 mm	9 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1		NOR TYPE		11 mm		110 ns	1.8
K8F1315ETM-SC1D0	Samsung	FLASH	COMMERCIAL	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel	32MX16	32M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	2	1.95 V	1 mm	9 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1		NOR TYPE		11 mm		110 ns	1.8
K8F5615EBM-SE1E	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B44					Not Qualified	BOTTOM	268435456 bit						NOR TYPE	.00002 Amp		YES	100 ns		YES
K9K1216U0C-DCB00	Samsung	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel	32MX16	32M	0 Cel					BOTTOM	R-PBGA-B63		3.6 V	1.2 mm	9 mm	Not Qualified		536870912 bit	2.7 V	CONTAINS ADDITIONAL 16M BIT NAND FLASH						11 mm		30 ns	2.7
K9W4G08U1M-KIB00	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel	256MX8	256M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.15 mm	12 mm	Not Qualified		2147483648 bit	2.7 V	CONTAINS ADDITIONAL 64M BIT NAND FLASH				SLC NAND TYPE		15.4 mm			2.7
K8P5615UQA-PE4D0	Samsung	FLASH	COMMERCIAL EXTENDED	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	32K,128K	50 mA	16777216 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20		Flash Memories	.5 mm	85 Cel	16MX16	16M	-25 Cel	8,126	YES		YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	14 mm	Not Qualified	BOTTOM/TOP	268435456 bit	2.7 V				260	NOR TYPE	.00006 Amp		YES	70 ns	2.7	YES
K8F1215ETM-DC1C0	Samsung	FLASH	COMMERCIAL	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel	32MX16	32M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	2	1.95 V	1 mm	9 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1		NOR TYPE		11 mm		110 ns	1.8
K8S5415EZC-DC1F0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel	16MX16	16M	0 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm	6.2 mm	Not Qualified	BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE		7.7 mm		100 ns	1.8
K8F5715EBM-DC1E	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	70 Cel	16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B88					Not Qualified	BOTTOM	268435456 bit						NOR TYPE	.00002 Amp		YES	100 ns		YES
K8S5615EZB-SC1C0	Samsung
K8S3215EBE-SC7BT	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel	2MX16	2M	0 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B44					Not Qualified	BOTTOM	33554432 bit						NOR TYPE	.00005 Amp		YES	90 ns		YES
K8S5715ETC-DE1E0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel	16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm	6.2 mm	Not Qualified	TOP	268435456 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE		7.7 mm		100 ns	1.8
K8F1315ETM-DE1E0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel	32MX16	32M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	2	1.95 V	1 mm	9 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1		NOR TYPE		11 mm		110 ns	1.8
K8C5515ETM-FC1D0	Samsung	FLASH	COMMERCIAL	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel	16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167	3				Not Qualified	TOP	268435456 bit					240	NOR TYPE	.00002 Amp		YES	100 ns		YES
K8A6415ETC-HE7B	Samsung	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel	4MX16	4M	-25 Cel	8,127	YES			BOTTOM	R-PBGA-B88				8 mm	Not Qualified	TOP	67108864 bit			8			NOR TYPE	.00005 Amp	11 mm	YES	70 ns		YES
K8S5615EBA-FE7BT	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel	16MX16	16M	-25 Cel	8, 511	YES			BOTTOM	R-PBGA-B44					Not Qualified	BOTTOM	268435456 bit						NOR TYPE	.00007 Amp		YES	88.5 ns		YES
KFG1216D2A-DID50	Samsung	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	2.65			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel	32MX16	32M	-40 Cel					BOTTOM	R-PBGA-B63		2.9 V	1 mm	9.5 mm	Not Qualified		536870912 bit	2.4 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE						12 mm		76 ns	2.7
K9K8G08U1A-IIB00	Samsung	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	1073741824 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)		Flash Memories	2 mm	85 Cel	1GX8	1G	-40 Cel	8K	YES		YES	BOTTOM	R-PBGA-B52	3	3.6 V	.65 mm	12 mm	Not Qualified		8589934592 bit	2.7 V		2K		260		.00005 Amp	17 mm		20 ns	2.7	NO
K8C1215ETM-DC1D0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel	32MX16	32M	0 Cel	4,511	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B167	3	1.95 V	1.4 mm	10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1	260	NOR TYPE	.00002 Amp	14 mm	YES	110 ns	1.8	YES
K8P3215UQB-EI4DT	Samsung	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	2MX16	2M	-40 Cel	16,62	YES		YES	BOTTOM	S-PBGA-B64	3				Not Qualified	BOTTOM/TOP	33554432 bit			8		260	NOR TYPE	.00003 Amp		YES	70 ns		YES
K9F2G16Q0M-PIB0	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		64K	15 mA	134217728 words	1.8	NO	1.8	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel	128MX16	128M	-40 Cel	2K	YES		YES	DUAL	R-PDSO-G48					Not Qualified		2147483648 bit			1K				.00005 Amp			45 ns		NO
KFH2G16Q2M-DEB5	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	22 mA	134217728 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel	128MX16	128M	-30 Cel	2K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1				Not Qualified		2147483648 bit			1K	e3			.0001 Amp			14.5 ns		NO
K8A6415ETC-SE7B0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel	4MX16	4M	-25 Cel	8,127	YES			BOTTOM	R-PBGA-B88	3	1.95 V	1.1 mm	8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8		260	NOR TYPE	.00005 Amp	11 mm	YES	70 ns	1.8	YES
K8A5715ETC-FE1ET	Samsung
K8S5615EZC-SC1F0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel	16MX16	16M	0 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm	6.2 mm	Not Qualified	BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				NOR TYPE		7.7 mm		100 ns	1.8
K9F3208W0A-TCS00	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	5			8	SMALL OUTLINE, THIN PROFILE				.8 mm	70 Cel	4MX8	4M	0 Cel					DUAL	R-PDSO-G40		5.5 V	1.2 mm	10.16 mm	Not Qualified		33554432 bit	2.7 V	CONTAINS ADDITIONAL 128K X 8 BIT NAND FLASH						18.41 mm		35 ns	2.7
K8S2615EBE-SC7E0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel	8MX16	8M	0 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm		Not Qualified	BOTTOM	134217728 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE								70 ns	1.8
K8D1716UTC-DC070	Samsung	FLASH	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel	1MX16	1M	0 Cel	8,31	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3	3.6 V	1 mm	6 mm	Not Qualified	TOP	16777216 bit	2.7 V			e1		NOR TYPE	.000018 Amp	8.5 mm	YES	70 ns	2.7	YES
K8S5615ETA-DC7B	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel	16MX16	16M	0 Cel	8,511	YES			BOTTOM	R-PBGA-B44					Not Qualified	TOP	268435456 bit						NOR TYPE	.00007 Amp		YES	88.5 ns		YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.