Samsung Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K8P2915UQB-DE4B0	Samsung	FLASH	COMMERCIAL EXTENDED	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA80,8X12,32		Flash Memories	.8 mm	85 Cel	8MX16	8M	-25 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B80	3	3.6 V			Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V		8			260	NOR TYPE	.00003 Amp		YES	60 ns	2.7	YES
K9F4G08U0M-ICB0	Samsung	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS		NO LEAD	PARALLEL		128K	30 mA	536870912 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories		70 Cel	512MX8	512M	0 Cel	4K	YES		YES	BOTTOM		1				Not Qualified		4294967296 bit			2K					.00005 Amp			25 ns		NO
K9NBG08U5M-PIB00	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			536870912 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel	512MX8	512M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified		4294967296 bit	2.7 V	CONTAINS ADDITIONAL 256M BIT SPARE NAND MEMORY							18.4 mm		30 ns	2.7
K9W4G08U1M-PIB00	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel	256MX8	256M	-40 Cel					DUAL	R-PDSO-G48	2	3.6 V	1.2 mm	12 mm	Not Qualified		2147483648 bit	2.7 V	CONTAINS ADDITIONAL 64M BIT NAND FLASH					SLC NAND TYPE		18.4 mm		30 ns	2.7
K8P3215UQB-PC4BT	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	70 Cel	2MX16	2M	0 Cel	16,62	YES		YES	DUAL	R-PDSO-G48	3				Not Qualified	BOTTOM/TOP	33554432 bit			8			260	NOR TYPE	.00003 Amp		YES	60 ns		YES
K8S5615EZC-FC1C0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel	16MX16	16M	0 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm	6.2 mm	Not Qualified	BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		7.7 mm		100 ns	1.8
K8P6415UQB-EI4DT	Samsung	FLASH	OTHER	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	85 Cel	4MX16	4M	-25 Cel	16,126	YES		YES	BOTTOM	S-PBGA-B64	3				Not Qualified	BOTTOM/TOP	67108864 bit			8			260	NOR TYPE	.00003 Amp		YES	70 ns		YES
KFG5616D1M-DEBT	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		32K	30 mA	16777216 words	2.7	NO	2.7	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel	16MX16	16M	-30 Cel	512	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1				Not Qualified		262144 bit			512	e3				.00005 Amp			14.5 ns		NO
K9F4G08U0M-YCB0T	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		128K	30 mA	536870912 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	70 Cel	512MX8	512M	0 Cel	4K	YES		YES	DUAL	R-PDSO-G48	1				Not Qualified		4294967296 bit			2K					.00005 Amp			25 ns		NO
K8P1615UQB-DC4D000	Samsung	FLASH	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	70 Cel	1MX16	1M	0 Cel					BOTTOM	R-PBGA-B48		3.6 V	1 mm	6 mm	Not Qualified	BOTTOM/TOP	16777216 bit	2.7 V						NOR TYPE		8 mm		70 ns	2.7
K9F4G08U0D-SCB00	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	.5 mm	70 Cel	512MX8	512M	0 Cel	4K	YES		YES	DUAL	R-PDSO-G48	2	3.6 V	1.2 mm	12 mm	Not Qualified		4294967296 bit	2.7 V	CONTAINS ADDITIONAL 128M BIT NAND FLASH	2K	e3/e6			SLC NAND TYPE	.00005 Amp	18.4 mm		25 ns	3.3	NO
K8A6315ETC-DE7E0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel	4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm	8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11 mm		70 ns	1.8
K8S2815EBC-FC7CT	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel	8MX16	8M	0 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44					Not Qualified	BOTTOM	134217728 bit							NOR TYPE	.00005 Amp		YES	70 ns		YES
K9K8G08U0F-5HB00	Samsung	FLASH	INDUSTRIAL	63	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			1073741824 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	105 Cel	1GX8	1G	-40 Cel					BOTTOM	S-PBGA-B63		3.6 V	1 mm	9 mm			8589934592 bit	2.7 V						SLC NAND TYPE		11 mm			2.7
K8D3216UBC-DI07T	Samsung	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		8K,64K	50 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B48					Not Qualified	BOTTOM	33554432 bit							NOR TYPE	.000018 Amp		YES	70 ns		YES
K8A6415EBB-DE7B0	Samsung
K9F4G08U1M-IIB0	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS		NO LEAD	PARALLEL		128K	30 mA	536870912 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories		85 Cel	512MX8	512M	-40 Cel	4K	YES		YES	BOTTOM		1				Not Qualified		4294967296 bit			2K					.00005 Amp			25 ns		NO
K8D3216UBC-DI090	Samsung	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B48	3	3.6 V	1 mm	6 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V						NOR TYPE	.000018 Amp	8.5 mm	YES	90 ns	2.7	YES
K9K1216Q0C-DCB00	Samsung	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel	32MX16	32M	0 Cel					BOTTOM	R-PBGA-B63		1.95 V	1.2 mm	9 mm	Not Qualified		536870912 bit	1.7 V	CONTAINS ADDITIONAL 16M BIT NAND FLASH							11 mm		30 ns	1.8
K8P3315UQB-DE4C0	Samsung	FLASH	OTHER	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	.8 mm	85 Cel	2MX16	2M	-25 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B48					Not Qualified	BOTTOM/TOP	33554432 bit			8				NOR TYPE	.00003 Amp		YES	65 ns		YES
KFN2G16Q2M-DEB60	Samsung	FLASH	OTHER	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	40 mA	134217728 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel	128MX16	128M	-30 Cel	2K	YES		YES	BOTTOM	R-PBGA-B63		1.95 V	1.2 mm	11 mm	Not Qualified		2147483648 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	1K				SLC NAND TYPE	.00005 Amp	13 mm		76 ns	1.8	NO
K8S2815EBC-FC7ET	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel	8MX16	8M	0 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44					Not Qualified	BOTTOM	134217728 bit							NOR TYPE	.00005 Amp		YES	70 ns		YES
K8A5715ETC-FE1E0	Samsung
K8F5615ETM-SE1F	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel	16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B44					Not Qualified	TOP	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8C1115ETM-FE1ET	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel	32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167	3				Not Qualified	TOP	536870912 bit						240	NOR TYPE	.00002 Amp		YES	110 ns		YES
K8C5415EBM-DC1D0	Samsung	FLASH	COMMERCIAL	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel	16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167					Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8D6316UTM-FC09T	Samsung	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		8K,64K	50 mA	4194304 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel	4MX16	4M	0 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B48					Not Qualified	TOP	67108864 bit							NOR TYPE	.00003 Amp		YES	90 ns		YES
K9F2808Q0C-HCB00	Samsung	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	70 Cel	16MX8	16M	0 Cel					BOTTOM	R-PBGA-B63		1.95 V	1 mm	9 mm	Not Qualified		134217728 bit	1.7 V	CONTAINS ADDITIONAL 4M BIT NAND FLASH			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm		40 ns	1.8
K9F2G08Q0M-YCB00	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	1.8			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel	256MX8	256M	0 Cel					DUAL	R-PDSO-G48		1.95 V	1.2 mm	12 mm	Not Qualified		2147483648 bit	1.7 V	CONTAINS ADDITIONAL 64M BIT NAND FLASH					SLC NAND TYPE		18.4 mm		30 ns	1.8
K8A6415ETC-SC7B0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	70 Cel	4MX16	4M	0 Cel	8,127	YES			BOTTOM	R-PBGA-B88	3	1.95 V	1.1 mm	8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8			260	NOR TYPE	.00005 Amp	11 mm	YES	70 ns	1.8	YES
K9K8G08U0M-PCB00	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	35 mA	1073741824 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	.5 mm	70 Cel	1GX8	1G	0 Cel	8K	YES	TIN BISMUTH	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified		8589934592 bit	2.7 V	CONTAINS ADDITIONAL 256M BIT SPARE NAND MEMORY	2K	e6		260		.0001 Amp	18.4 mm		20 ns	2.7	NO
K8S2815EBC-SE7E	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel	8MX16	8M	-25 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44					Not Qualified	BOTTOM	134217728 bit							NOR TYPE	.00005 Amp		YES	70 ns		YES
K8D6316UBM-PC090	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories	.5 mm	70 Cel	4MX16	4M	0 Cel	8,127	YES		YES	DUAL	R-PDSO-G48	2	3.6 V	1.2 mm	12 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V						NOR TYPE	.00003 Amp	18.4 mm	YES	90 ns	2.7	YES
K8D1716UTC-PI08	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES	MATTE TIN	YES	DUAL	R-PDSO-G48	1	3.6 V	1.2 mm	12 mm	Not Qualified	TOP	16777216 bit	2.7 V			e3			NOR TYPE	.000018 Amp	18.4 mm	YES	80 ns	3	YES
K9F4G08U0A-ICB00	Samsung	FLASH	COMMERCIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)		Flash Memories	2 mm	70 Cel	512MX8	512M	0 Cel	4K	YES		YES	BOTTOM	R-PBGA-B52		3.6 V	.65 mm	12 mm	Not Qualified		4294967296 bit	2.7 V		2K					.00005 Amp	17 mm		20 ns	2.7	NO
K8C5415ETM-DC1F0	Samsung	FLASH	COMMERCIAL	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel	16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167					Not Qualified	TOP	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K9WBG08U1M-IIB0T	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS		NO LEAD	PARALLEL		256K	35 mA	4294967296 words	3.3	NO	3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories		85 Cel	4GX8	4G	-40 Cel	16K	YES		YES	BOTTOM						Not Qualified		34359738368 bit			4K					.0001 Amp			20 ns		NO
K8D6316UBM-DI09T	Samsung	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		8K,64K	50 mA	4194304 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel	4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B48					Not Qualified	BOTTOM	67108864 bit							NOR TYPE	.00003 Amp		YES	90 ns		YES
K8A6415ETC-DC7C0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	70 Cel	4MX16	4M	0 Cel	8,127	YES			BOTTOM	R-PBGA-B88	3	1.95 V	1.1 mm	8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8			260	NOR TYPE	.00005 Amp	11 mm	YES	70 ns	1.8	YES
KFG1216Q2A-DID50	Samsung	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel	32MX16	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	2	1.95 V	1 mm	9.5 mm	Not Qualified		536870912 bit	1.7 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE		e1					12 mm		76 ns	1.8
K8A6215ETC-SE7B0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel	4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm	8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11 mm		70 ns	1.8
K8D1716UBC-YI07T	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		8K,64K	50 mA	1048576 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel	1MX16	1M	-40 Cel	8,31	YES	TIN SILVER COPPER	YES	DUAL	R-PDSO-G48	3				Not Qualified	BOTTOM	16777216 bit				e1			NOR TYPE	.000018 Amp		YES	70 ns		YES
KFM1G16Q2C-AEB8T	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		64K	40 mA	67108864 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel	64MX16	64M	-30 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3				Not Qualified		1073741824 bit			1K	e1		260	MLC NAND TYPE	.00005 Amp			70 ns		NO
K9K8G08U0A-YIB00	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	35 mA	1073741824 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel	1GX8	1G	-40 Cel	8K	YES		YES	DUAL	R-PDSO-G48	1	3.6 V	1.2 mm	12 mm	Not Qualified		8589934592 bit	2.7 V	CONTAINS ADDITIONAL 256M BIT SPARE MEMORY	2K					.0001 Amp	18.4 mm		20 ns	2.7	NO
K8D1716UTC-YC09T	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		8K,64K	50 mA	1048576 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel	1MX16	1M	0 Cel	8,31	YES	TIN SILVER COPPER	YES	DUAL	R-PDSO-G48	3				Not Qualified	TOP	16777216 bit				e1			NOR TYPE	.000018 Amp		YES	90 ns		YES
K8A5715EBC-FC1ET	Samsung
KFH2G16Q2A-DEB6	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		64K	38 mA	134217728 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel	128MX16	128M	-30 Cel	2K	YES		YES	BOTTOM	R-PBGA-B63					Not Qualified		2147483648 bit			1K				SLC NAND TYPE	.0001 Amp			11 ns		NO
K8S2815EBE-SC7ET	Samsung

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.