Samsung Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K8S1115ETC-SC1E0	Samsung	FLASH	COMMERCIAL	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	70 Cel		32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM		R-PBGA-B64		1.95 V	1 mm				Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				260	NOR TYPE	.00003 Amp		YES	100 ns	1.8	YES
K8F5615ETM-SE1E	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM		R-PBGA-B44							Not Qualified	TOP	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
KFG2G16Q2M-DEB6S	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	134217728 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		128MX16	128M	-30 Cel	2K	YES	MATTE TIN	YES	BOTTOM		R-PBGA-B63	1						Not Qualified		2147483648 bit			1K	e3			SLC NAND TYPE	.00005 Amp			76 ns		NO
K8C1215ETM-FE1C0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32		Flash Memories		.8 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B167	3	1.95 V	1.4 mm			10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e0		240	NOR TYPE	.00002 Amp	14 mm	YES	110 ns	1.8	YES
KFKAGH6Q4M-DEB6T	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		256K	35 mA	1073741824 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		1GX16	1G	-30 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63							Not Qualified		17179869184 bit			2K				MLC NAND TYPE	.0001 Amp			76 ns		NO
K8D3216UBCPI0800	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	85 Cel		2MX16	2M	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V						NOR TYPE		18.4 mm		80 ns	2.7
K8P3315UQB-DI4C0	Samsung	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	16,62	YES		YES	BOTTOM		R-PBGA-B48							Not Qualified	BOTTOM/TOP	33554432 bit			8				NOR TYPE	.00003 Amp		YES	65 ns		YES
K8A5715EZC-SC1ET	Samsung
K8A2815EBB-FE7B0	Samsung																																						3														240
K8S2615ETE-DC7B0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	70 Cel		8MX16	8M	0 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm				Not Qualified	TOP	134217728 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				260					70 ns	1.8
K8F5615ETM-FE1DT	Samsung	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM		R-PBGA-B88							Not Qualified	TOP	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K9K1208Q0C-HIB00	Samsung	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, THIN PROFILE, FINE PITCH					.8 mm	85 Cel		64MX8	64M	-40 Cel					BOTTOM		R-PBGA-B63		1.95 V	1.2 mm			9 mm	Not Qualified		536870912 bit	1.7 V	CONTAINS ADDITIONAL 16M BIT NAND FLASH							11 mm		30 ns	1.8
K8S1315EBC-DC1C0	Samsung	FLASH	COMMERCIAL	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	70 Cel		32MX16	32M	0 Cel					BOTTOM		R-PBGA-B64		1.95 V	1 mm					BOTTOM	536870912 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE				100 ns	1.8
K8C1015ETM-DC1C0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32		Flash Memories		.8 mm	70 Cel		32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM		R-PBGA-B167	3	1.95 V	1.4 mm			10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				260	NOR TYPE	.00002 Amp	14 mm	YES	110 ns	1.8	YES
K8S2815EBC-FC7E0	Samsung	FLASH	COMMERCIAL	44	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS	4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY	BGA44,8X14,20		Flash Memories		.5 mm	70 Cel		8MX16	8M	0 Cel	8, 255	YES		YES	BOTTOM		R-PBGA-B44	1	1.95 V					Not Qualified	BOTTOM	134217728 bit	1.7 V						NOR TYPE	.00005 Amp		YES	70 ns	1.8	YES
K8S2615ETC-SE7E0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		70 mA	8388608 words	1.8	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH						85 Cel	3-STATE	8MX16	8M	-25 Cel		NO		YES	BOTTOM	HARDWARE	R-PBGA-B44		1.95 V		100000 Write/Erase Cycles	108 MHz			TOP	134217728 bit	1.7 V						NOR TYPE	.00005 Amp		YES	70 ns	1.8	YES
K8P2815UQC-QI4C0	Samsung	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	16,254	YES		YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	BOTTOM BOOT BLOCK, TOP BOOT BLOCK	8			260	NOR TYPE	.00003 Amp	18.4 mm	YES	65 ns	3	YES
K8A6315EBC-HE7B0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.8 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM		R-PBGA-B88		1.95 V	1.1 mm			8 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11 mm		70 ns	1.8
K8F5715ETM-DE1DT	Samsung	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM		R-PBGA-B88							Not Qualified	TOP	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8A6415EBC-SC7B	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES			BOTTOM		R-PBGA-B88						8 mm	Not Qualified	BOTTOM	67108864 bit			8				NOR TYPE	.00005 Amp	11 mm	YES	70 ns		YES
K8S5715ETB-FC1F0	Samsung
K9K1208U0C-JIB00	Samsung	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K	40 mA	67108864 words	3.3	NO	3.3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		64MX8	64M	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63	3	3.6 V	1.2 mm			9 mm	Not Qualified		536870912 bit	2.7 V		512			260		.00005 Amp	11 mm		30 ns	2.7	NO
KM28N800T-T7	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE		16			.5 mm	70 Cel		1MX8	1M	0 Cel					DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified		8388608 bit	4.5 V						NOR TYPE		18.4 mm		70 ns	5
KFG2816Q1M-DEB000	Samsung	FLASH	OTHER	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		8MX16	8M	-30 Cel					BOTTOM		R-PBGA-B67		1.95 V	1 mm			7 mm	Not Qualified		134217728 bit	1.7 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE							9 mm		76 ns	1.8
K8F5715EBM-SC1FT	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM		R-PBGA-B44							Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8F5615ETM-DC1D	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM		R-PBGA-B88							Not Qualified	TOP	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K9K2G08U0A-PIB0	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	30 mA	268435456 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES		YES	DUAL		R-PDSO-G48							Not Qualified		2147483648 bit			2K					.0001 Amp			30 ns		NO
K8S3215EBE-DC7BT	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	70 Cel		2MX16	2M	0 Cel	8,63	YES		YES	BOTTOM		R-PBGA-B44							Not Qualified	BOTTOM	33554432 bit							NOR TYPE	.00005 Amp		YES	90 ns		YES
K8S5515EBC-FC1F0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	70 Cel		16MX16	16M	0 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		7.7 mm		100 ns	1.8
K8P3315UQB-EC4D0	Samsung	FLASH	COMMERCIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	70 Cel		2MX16	2M	0 Cel	16,62	YES		YES	BOTTOM		S-PBGA-B64							Not Qualified	BOTTOM/TOP	33554432 bit			8				NOR TYPE	.00003 Amp		YES	70 ns		YES
SMFV032	Samsung	FLASH CARD	COMMERCIAL	22		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS			33554432 words	3.3			8	MICROELECTRONIC ASSEMBLY				10		55 Cel		32MX8	32M	0 Cel					UNSPECIFIED		X-XXMA-X22		3.6 V					Not Qualified		268435456 bit	2.7 V	HARDWARE DATA PROTECTION; DATA RETENTION 10 YEARS; 1M PROGRAM/ERASE CYCLES									35 ns	3
K8S5615EZC-DE1F0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified	BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		7.7 mm		100 ns	1.8
K8A6215ETC-FC7E0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.8 mm	70 Cel		4MX16	4M	0 Cel					BOTTOM		R-PBGA-B88		1.95 V	1.1 mm			8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11 mm		70 ns	1.8
K8S5415ETB-SC1CT	Samsung
K8P3315UQB-PC4D0	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		2MX16	2M	0 Cel	16,62	YES		YES	DUAL		R-PDSO-G48							Not Qualified	BOTTOM/TOP	33554432 bit			8				NOR TYPE	.00003 Amp		YES	70 ns		YES
K9K2G08Q0M-PIB00	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	1.8			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		256MX8	256M	-40 Cel					DUAL		R-PDSO-G48		1.95 V	1.2 mm			12 mm	Not Qualified		2147483648 bit	1.7 V	CONTAINS ADDITIONAL 64M BIT NAND FLASH			NOT SPECIFIED	260	SLC NAND TYPE		18.4 mm		30 ns	1.8
K8S2815ETC-FC7BT	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	70 Cel		8MX16	8M	0 Cel	8, 255	YES		YES	BOTTOM		R-PBGA-B44							Not Qualified	TOP	134217728 bit							NOR TYPE	.00005 Amp		YES	70 ns		YES
K8F5615EBM-DC1FT	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM		R-PBGA-B88							Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8F5715ETM-SC1C	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM		R-PBGA-B44							Not Qualified	TOP	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8A6215ETC-FC7D0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH					.8 mm	70 Cel		4MX16	4M	0 Cel					BOTTOM		R-PBGA-B88		1.95 V	1.1 mm			8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11 mm		70 ns	1.8
K8D6316UTM-TC080	Samsung	FLASH	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B48		3.6 V	1 mm			6 mm	Not Qualified	TOP	67108864 bit	2.7 V			e0			NOR TYPE	.00003 Amp	9 mm	YES	80 ns	2.7	YES
MZ5PA064HMCD-01000	Samsung	FLASH MODULE							1	CMOS						68719476736 words				8	MICROELECTRONIC ASSEMBLY								64GX8	64G																	549755813888 bit							MLC NAND TYPE
K9QCG08U5A-9IB0	Samsung	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		256K	30 mA	8589934592 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.63,20		Flash Memories		.5 mm	85 Cel		8GX8	8G	-40 Cel	32K	YES		YES	DUAL		R-PDSO-G56							Not Qualified		65536 bit			4K					.0001 Amp			20 ns		NO
K8A3215EBE-DC7C0	Samsung
K9K1G08U0A-VCB0	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K	30 mA	134217728 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20		Flash Memories		.5 mm	70 Cel		128MX8	128M	0 Cel	8K	YES	Tin/Lead (Sn/Pb)	YES	DUAL		R-PDSO-G48							Not Qualified		1073741824 bit			512	e0				.00005 Amp			30 ns		NO
K9S2808V0A-SSB0	Samsung	FLASH CARD	COMMERCIAL	22		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS			16777216 words	3.3			8	MICROELECTRONIC ASSEMBLY						55 Cel		16MX8	16M	0 Cel					UNSPECIFIED		X-XXMA-X22		3.6 V					Not Qualified		134217728 bit	2.7 V										35 ns	2.7
MZ-M6E1T0BW	Samsung	FLASH MODULE	COMMERCIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD		ASYNCHRONOUS			1099511627776 words				8	MICROELECTRONIC ASSEMBLY						70 Cel		1TX8	1T	0 Cel					UNSPECIFIED		R-XXMA-N									8796093022208 bit							MLC NAND TYPE
K8S6615EBD-HE7E0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm					BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.