Samsung Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K8S3215ETF-DC7BT	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel	3-STATE	2MX16	2M	0 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B44	3	1.95 V	1 mm	100000 Write/Erase Cycles	5 mm	Not Qualified	TOP	33554432 bit	1.7 V					260	NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K8S5715EZB-DC1FT	Samsung
K8S5515EBC-DE1F0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm		6.2 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		7.7 mm		100 ns	1.8
K8D1716UTC-PI09	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES	MATTE TIN	YES	DUAL	R-PDSO-G48	1	3.6 V	1.2 mm		12 mm	Not Qualified	TOP	16777216 bit	2.7 V			e3			NOR TYPE	.000018 Amp	18.4 mm	YES	90 ns	3	YES
K8P3315UQB-PE4BT	Samsung	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel		2MX16	2M	-25 Cel	16,62	YES		YES	DUAL	R-PDSO-G48						Not Qualified	BOTTOM/TOP	33554432 bit			8				NOR TYPE	.00003 Amp		YES	60 ns		YES
K8P5616UZB-PI4E0	Samsung	FLASH	INDUSTRIAL	54	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			16777216 words	3			16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	85 Cel		16MX16	16M	-40 Cel					DUAL	R-PDSO-G54		3.6 V	1.2 mm		14 mm	Not Qualified	BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE		18.4 mm		80 ns	3
K8S5615EZC-FE1C0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm		6.2 mm	Not Qualified	BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		7.7 mm		100 ns	1.8
K8C1315EBM-DC1F	Samsung	FLASH	COMMERCIAL	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel		32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167						Not Qualified	BOTTOM	536870912 bit							NOR TYPE	.00002 Amp		YES	110 ns		YES
K9F6408U0B-TCB0	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	20 mA	8388608 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories	.8 mm	70 Cel		8MX8	8M	0 Cel	1K	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		3.6 V	1.2 mm		10.16 mm	Not Qualified		67108864 bit	2.7 V		512	e0				.00005 Amp	18.41 mm		35 ns	2.7	NO
KFG5616Q1M-PED00	Samsung	FLASH	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			16777216 words	1.8			16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		16MX16	16M	-30 Cel					DUAL	R-PDSO-G48		1.95 V	1.2 mm		12 mm	Not Qualified		268435456 bit	1.7 V								18.4 mm		76 ns	1.8
K8S5715ETB-DE1E0	Samsung
K8D3216UTC-FC070	Samsung	FLASH	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel		2MX16	2M	0 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B48		3.6 V	1 mm		6 mm	Not Qualified	TOP	33554432 bit	2.7 V				30	240	NOR TYPE	.000018 Amp	8.5 mm	YES	70 ns	2.7	YES
K8Q2815UQB-PC4B0	Samsung	FLASH	COMMERCIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	8388608 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20		Flash Memories	.5 mm	70 Cel		8MX16	8M	0 Cel	32,252	YES		YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm		14 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V		8			260	NOR TYPE	.00006 Amp		YES	60 ns	2.7	YES
K9KAG08U1M-ICB0T	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		256K	30 mA	2147483648 words	3.3		3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories		85 Cel		2GX8	2G	-40 Cel	4K	YES		YES	BOTTOM							Not Qualified		17179869184 bit			4K					.001 Amp			20 ns
K8S1015EZC-DE1E0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B64		1.95 V	1 mm			Not Qualified		536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE				100 ns	1.8
K8C5615EBM-DC1C0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B167	2	1.95 V	1.4 mm		10.5 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE	.00002 Amp	14 mm	YES	100 ns	1.8	YES
K8S5715EZB-DC1F0	Samsung
K8D6316UBM-FC07	Samsung	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	4194304 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B48						Not Qualified	BOTTOM	67108864 bit							NOR TYPE	.00003 Amp		YES	70 ns		YES
K8D3216UTC-DI080	Samsung	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B48	3	3.6 V	1 mm		6 mm	Not Qualified	TOP	33554432 bit	2.7 V						NOR TYPE	.000018 Amp	8.5 mm	YES	80 ns	2.7	YES
K8C1215EBM-DC1D	Samsung	FLASH	COMMERCIAL	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel		32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167						Not Qualified	BOTTOM	536870912 bit							NOR TYPE	.00002 Amp		YES	110 ns		YES
K8S3215ETF-DE7C	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel	3-STATE	2MX16	2M	-25 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B44	3	1.95 V	1 mm	100000 Write/Erase Cycles	5 mm	Not Qualified	TOP	33554432 bit	1.7 V					260	NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K8A2815EBB-EC7BT	Samsung
K9K1216D0C-HCB0	Samsung	FLASH	COMMERCIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K	20 mA	33554432 words	2.65	NO	2.65	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	70 Cel		32MX16	32M	0 Cel	4K	YES		YES	BOTTOM	R-PBGA-B63						Not Qualified		536870912 bit			256					.00005 Amp			45 ns		NO
K8S1115EBC-DC1F0	Samsung	FLASH	COMMERCIAL	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel		32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B64		1.95 V	1 mm			Not Qualified	BOTTOM	536870912 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp		YES	100 ns	1.8	YES
K8P3315UQB-DC4C	Samsung	FLASH	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			2097152 words	3			16	GRID ARRAY				.8 mm	70 Cel		2MX16	2M	0 Cel					BOTTOM	R-PBGA-B48		3.6 V	1 mm		6 mm	Not Qualified	BOTTOM/TOP	33554432 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK							8 mm		65 ns	3
K8D6316UTM-DI070	Samsung	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	2	3.6 V	1 mm		6 mm	Not Qualified	TOP	67108864 bit	2.7 V			e1			NOR TYPE	.00003 Amp	9 mm	YES	70 ns	2.7	YES
K8D3216UBC-TI07	Samsung	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)	YES	BOTTOM	R-PBGA-B48						Not Qualified	BOTTOM	33554432 bit				e0			NOR TYPE	.000018 Amp		YES	70 ns		YES
K9F4G08U0A-IIB00	Samsung	FLASH	INDUSTRIAL	52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	536870912 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA52(UNSPEC)		Flash Memories	2 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES		YES	BOTTOM	R-PBGA-B52	3	3.6 V	.65 mm		12 mm	Not Qualified		4294967296 bit	2.7 V		2K			260		.00005 Amp	17 mm		20 ns	2.7	NO
K8P1615UQB-DE4C000	Samsung	FLASH	COMMERCIAL EXTENDED	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		1MX16	1M	-25 Cel					BOTTOM	R-PBGA-B48		3.6 V	1 mm		6 mm	Not Qualified	BOTTOM/TOP	16777216 bit	2.7 V						NOR TYPE		8 mm		65 ns	2.7
K8A6415EBB-FE7C0	Samsung																																				3													240
K9NCG08U5M-PIB0	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		256K	35 mA	8589934592 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel		8GX8	8G	-40 Cel	32K	YES		YES	DUAL	R-PDSO-G48						Not Qualified		65536 bit			4K					.0001 Amp			30 ns		NO
K9K2G08Q0M-PCB0	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	20 mA	268435456 words	1.8	NO	1.8	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	70 Cel		256MX8	256M	0 Cel	2K	YES		YES	DUAL	R-PDSO-G48						Not Qualified		2147483648 bit			2K					.0001 Amp			60 ns		NO
K8S2815ETE-DE7E0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm			Not Qualified	TOP	134217728 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K8S2815ETE-FE7B0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm			Not Qualified	TOP	134217728 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K8F5615ETM-FC1F	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B88						Not Qualified	TOP	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8P1615UQB-PE4B000	Samsung	FLASH	COMMERCIAL EXTENDED	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		1MX16	1M	-25 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM/TOP	16777216 bit	2.7 V						NOR TYPE		18.4 mm		60 ns	2.7
K8A6415EBB-DC7B0	Samsung
K8C1115EBM-FC1D0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	70 Cel		32MX16	32M	0 Cel					BOTTOM	R-PBGA-B167		1.95 V	1.4 mm		10.5 mm		BOTTOM	536870912 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							14 mm		110 ns	1.8
K9K1208U0M-YIB0	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K	25 mA	67108864 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel		64MX8	64M	-40 Cel	4K	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		536870912 bit	2.7 V		512	e0				.00005 Amp	18.4 mm		35 ns	2.7	NO
K8S5615EBB-FE1C0	Samsung
K8A3215EBE-FC7BT	Samsung																																				3													240
K8A5715EZC-DE1E0	Samsung
K8F1215ETM-DC1D0	Samsung	FLASH	COMMERCIAL	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel		32MX16	32M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	2	1.95 V	1 mm		9 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1			NOR TYPE		11 mm		110 ns	1.8
K8A5615ETC-SC1DT	Samsung
K9K1216U0C-JIB0T	Samsung	FLASH	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K	40 mA	33554432 words	3.3	NO	3.3	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		32MX16	32M	-40 Cel	4K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1					Not Qualified		536870912 bit			256	e3				.00005 Amp			45 ns		NO
K8C1315ETM-FE1C0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel			TIN LEAD		BOTTOM	R-PBGA-B167		1.95 V	1.4 mm		10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e0			NOR TYPE		14 mm		110 ns	1.8
MZ-76P4T0B/EU	Samsung	FLASH CARD			DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD		ASYNCHRONOUS			3298534883328 words				8	UNCASED CHIP					70 Cel		4TX8	4T	0 Cel					UPPER	R-XUUC-N								26388279066624 bit							MLC NAND TYPE
K8A6515ETC-HE7E0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm		8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11 mm		70 ns	1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.