Samsung Flash Memory 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish Ready or Busy Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Maximum Write Cycle Time (tWC) Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

K9K4G16U0M-YIB00

Samsung

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

268435456 words

3.3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

256MX16

256M

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

4294967296 bit

2.7 V

CONTAINS ADDITIONAL 128M BIT SPARE MEMORY

18.4 mm

30 ns

2.7

K8D1716UTC-PI07

Samsung

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8K,64K

50 mA

1048576 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

1MX16

1M

-40 Cel

8,31

YES

MATTE TIN

YES

DUAL

R-PDSO-G48

1

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

16777216 bit

2.7 V

e3

NOR TYPE

.000018 Amp

18.4 mm

YES

70 ns

3

YES

K9K8G08U0B-PIB0

Samsung

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

128K

35 mA

1073741824 words

NO

3/3.3

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

Flash Memories

.5 mm

85 Cel

1GX8

1G

-40 Cel

8K

YES

TIN BISMUTH

YES

DUAL

R-PDSO-G48

3

Not Qualified

8589934592 bit

2K

e6

260

.0002 Amp

25 ns

NO

K9F2816U0C-YCB00

Samsung

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8388608 words

3.3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

8MX16

8M

0 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

134217728 bit

2.7 V

CONTAINS ADDITIONAL 4M BIT NAND FLASH

SLC NAND TYPE

18.4 mm

30 ns

2.7

K8C1315ETM-FE1E0

Samsung

FLASH

OTHER

167

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

16K,64K

70 mA

33554432 words

1.8

YES

1.8

16

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA167,12X15,32

Flash Memories

.8 mm

85 Cel

32MX16

32M

-25 Cel

4,511

YES

TIN LEAD

YES

BOTTOM

R-PBGA-B167

3

1.95 V

1.4 mm

10.5 mm

Not Qualified

TOP

536870912 bit

1.7 V

SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE

e0

240

NOR TYPE

.00002 Amp

14 mm

YES

110 ns

1.8

YES

K8A2815EBM-LI7B0

Samsung

FLASH

INDUSTRIAL

64

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

8388608 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

85 Cel

8MX16

8M

-40 Cel

TIN SILVER COPPER

BOTTOM

S-PBGA-B64

2

1.95 V

1 mm

9 mm

Not Qualified

134217728 bit

1.7 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

e1

9 mm

90 ns

1.8

K8C5615EBM-FC1C0

Samsung

FLASH

COMMERCIAL

167

LFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

16K,64K

55 mA

16777216 words

1.8

YES

1.8

16

GRID ARRAY, LOW PROFILE, FINE PITCH

BGA167,12X15,32

Flash Memories

.8 mm

70 Cel

16MX16

16M

0 Cel

4,255

YES

TIN LEAD

YES

BOTTOM

R-PBGA-B167

1.95 V

1.4 mm

10.5 mm

Not Qualified

BOTTOM

268435456 bit

1.7 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

e0

NOR TYPE

.00002 Amp

14 mm

YES

100 ns

1.8

YES

K8F5615EBM-DE1C0

Samsung

FLASH

OTHER

88

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

16K,64K

55 mA

16777216 words

1.8

YES

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA88,8X12,32

Flash Memories

.8 mm

85 Cel

16MX16

16M

-25 Cel

4,255

YES

TIN SILVER COPPER

YES

BOTTOM

R-PBGA-B88

2

1.95 V

1.2 mm

8 mm

Not Qualified

BOTTOM

268435456 bit

1.7 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

e1

NOR TYPE

.00002 Amp

11 mm

YES

100 ns

1.8

YES

K8S3215ETF-DE7D

Samsung

FLASH

OTHER

44

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4K,32K

70 mA

2097152 words

1.8

YES

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA44,8X14,20

Flash Memories

.5 mm

85 Cel

3-STATE

2MX16

2M

-25 Cel

8,63

YES

YES

BOTTOM

R-PBGA-B44

3

1.95 V

1 mm

100000 Write/Erase Cycles

5 mm

Not Qualified

TOP

33554432 bit

1.7 V

260

NOR TYPE

.00005 Amp

7.5 mm

YES

70 ns

1.8

YES

K8D1716UTC-DC09T

Samsung

FLASH

COMMERCIAL

48

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

8K,64K

50 mA

1048576 words

YES

3/3.3

16

GRID ARRAY, FINE PITCH

BGA48,6X8,32

8

Flash Memories

.8 mm

70 Cel

1MX16

1M

0 Cel

8,31

YES

TIN SILVER COPPER

YES

BOTTOM

R-PBGA-B48

3

Not Qualified

TOP

16777216 bit

e1

NOR TYPE

.000018 Amp

YES

90 ns

YES

K8S6415EBB-DC7CT

Samsung

FLASH

COMMERCIAL

44

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

4K,32K

70 mA

4194304 words

1.8

YES

1.8

16

GRID ARRAY, FINE PITCH

BGA44,8X14,20

Flash Memories

.5 mm

70 Cel

4MX16

4M

0 Cel

8,127

YES

YES

BOTTOM

R-PBGA-B44

Not Qualified

BOTTOM

67108864 bit

NOR TYPE

.00005 Amp

YES

70 ns

YES

K9F2G08U0M-PIB0

Samsung

FLASH

INDUSTRIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

128K

30 mA

268435456 words

NO

3/3.3

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

Flash Memories

.5 mm

85 Cel

256MX8

256M

-40 Cel

2K

YES

TIN BISMUTH

YES

DUAL

R-PDSO-G48

3

Not Qualified

2147483648 bit

2K

e6

260

.00005 Amp

30 ns

NO

KFM1216Q2M-DEB00

Samsung

FLASH

OTHER

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

33554432 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

32MX16

32M

-30 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

2

1.95 V

1 mm

9.5 mm

Not Qualified

536870912 bit

1.7 V

SYNCHRONOUS BURST OPERATION IS POSSIBLE

e1

12 mm

76 ns

1.8

K8A6315ETC-DC7D0

Samsung

FLASH

COMMERCIAL

88

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

4194304 words

1.8

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

70 Cel

4MX16

4M

0 Cel

BOTTOM

R-PBGA-B88

1.95 V

1.1 mm

8 mm

Not Qualified

TOP

67108864 bit

1.7 V

TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

11 mm

70 ns

1.8

K9HBG08U1M-PCB00

Samsung

FLASH

COMMERCIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

256K

35 mA

4294967296 words

NO

3/3.3

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

Flash Memories

.5 mm

70 Cel

4GX8

4G

0 Cel

16K

YES

TIN BISMUTH

YES

DUAL

R-PDSO-G48

3

Not Qualified

34359738368 bit

2K

e6

260

.0001 Amp

20 ns

NO

K9K1216U0C-DIB00

Samsung

FLASH

INDUSTRIAL

63

TFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

33554432 words

3.3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

.8 mm

85 Cel

32MX16

32M

-40 Cel

BOTTOM

R-PBGA-B63

3.6 V

1.2 mm

9 mm

Not Qualified

536870912 bit

2.7 V

CONTAINS ADDITIONAL 16M BIT NAND FLASH

11 mm

30 ns

2.7

K8D6316UBMDC0800

Samsung

FLASH

COMMERCIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

4194304 words

3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

8

.8 mm

70 Cel

4MX16

4M

0 Cel

TIN SILVER COPPER

BOTTOM

R-PBGA-B48

2

3.6 V

1 mm

6 mm

Not Qualified

BOTTOM

67108864 bit

2.7 V

e1

NOR TYPE

9 mm

80 ns

2.7

K8S5715EBC-FC1F0

Samsung

FLASH

COMMERCIAL

44

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

55 mA

16777216 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

70 Cel

16MX16

16M

0 Cel

BOTTOM

R-PBGA-B44

1.95 V

1 mm

6.2 mm

Not Qualified

BOTTOM

268435456 bit

1.7 V

BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

NOR TYPE

7.7 mm

100 ns

1.8

K8A3215ETE-FE7BT

Samsung

3

240

K8S5615ETA-FE7BT

Samsung

FLASH

OTHER

44

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

4K,32K

70 mA

16777216 words

1.8

YES

1.8

16

GRID ARRAY, FINE PITCH

BGA44,8X14,20

Flash Memories

.5 mm

85 Cel

16MX16

16M

-25 Cel

8,511

YES

BOTTOM

R-PBGA-B44

Not Qualified

TOP

268435456 bit

NOR TYPE

.00007 Amp

YES

88.5 ns

YES

K9K1208Q0C-JIB0

Samsung

FLASH

INDUSTRIAL

63

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

16K

20 mA

67108864 words

1.8

NO

1.8

8

GRID ARRAY, FINE PITCH

BGA63,10X12,32

Flash Memories

.8 mm

85 Cel

64MX8

64M

-40 Cel

4K

YES

MATTE TIN

YES

BOTTOM

R-PBGA-B63

1

Not Qualified

536870912 bit

512

e3

.00005 Amp

40 ns

NO

K8S5615EZC-DE1C0

Samsung

FLASH

OTHER

44

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

55 mA

16777216 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

16MX16

16M

-25 Cel

BOTTOM

R-PBGA-B44

1.95 V

1 mm

6.2 mm

Not Qualified

BOTTOM/TOP

268435456 bit

1.7 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

NOR TYPE

7.7 mm

100 ns

1.8

K8P3315UQB-PC4C0

Samsung

FLASH

COMMERCIAL

48

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

4K,32K

55 mA

2097152 words

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP48,.8,20

Flash Memories

.5 mm

70 Cel

2MX16

2M

0 Cel

16,62

YES

YES

DUAL

R-PDSO-G48

Not Qualified

BOTTOM/TOP

33554432 bit

8

NOR TYPE

.00003 Amp

YES

65 ns

YES

K8C5515ETM-DE1ET

Samsung

FLASH

OTHER

167

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

16K,64K

55 mA

16777216 words

1.8

YES

1.8

16

GRID ARRAY, FINE PITCH

BGA167,12X15,32

Flash Memories

.8 mm

85 Cel

16MX16

16M

-25 Cel

4,255

YES

YES

BOTTOM

R-PBGA-B167

Not Qualified

TOP

268435456 bit

NOR TYPE

.00002 Amp

YES

100 ns

YES

K8S5615EZB-SE1C0

Samsung

K8S5615EZC-SE1C0

Samsung

FLASH

OTHER

44

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

55 mA

16777216 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

16MX16

16M

-25 Cel

BOTTOM

R-PBGA-B44

1.95 V

1 mm

6.2 mm

Not Qualified

BOTTOM/TOP

268435456 bit

1.7 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

NOR TYPE

7.7 mm

100 ns

1.8

K8D3216UTC-LI07

Samsung

FLASH

INDUSTRIAL

48

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

8K,64K

50 mA

2097152 words

YES

3/3.3

16

GRID ARRAY, FINE PITCH

BGA48,6X8,32

8

Flash Memories

.8 mm

85 Cel

2MX16

2M

-40 Cel

8,63

YES

YES

BOTTOM

R-PBGA-B48

Not Qualified

TOP

33554432 bit

NOR TYPE

.000018 Amp

YES

70 ns

YES

K8D3216UBC-LC09T

Samsung

FLASH

COMMERCIAL

48

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

8K,64K

50 mA

2097152 words

YES

3/3.3

16

GRID ARRAY, FINE PITCH

BGA48,6X8,32

8

Flash Memories

.8 mm

70 Cel

2MX16

2M

0 Cel

8,63

YES

YES

BOTTOM

R-PBGA-B48

Not Qualified

BOTTOM

33554432 bit

NOR TYPE

.000018 Amp

YES

90 ns

YES

K8D3216UTC-FC08T

Samsung

FLASH

COMMERCIAL

48

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

8K,64K

50 mA

2097152 words

YES

3/3.3

16

GRID ARRAY, FINE PITCH

BGA48,6X8,32

8

Flash Memories

.8 mm

70 Cel

2MX16

2M

0 Cel

8,63

YES

YES

BOTTOM

R-PBGA-B48

Not Qualified

TOP

33554432 bit

NOR TYPE

.000018 Amp

YES

80 ns

YES

K8P1615UQB-PC4D000

Samsung

FLASH

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3

16

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

1MX16

1M

0 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

BOTTOM/TOP

16777216 bit

2.7 V

NOR TYPE

18.4 mm

70 ns

2.7

K8S3215EBF-FC7DT

Samsung

FLASH

COMMERCIAL

44

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4K,32K

70 mA

2097152 words

1.8

YES

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA44,8X14,20

Flash Memories

.5 mm

70 Cel

3-STATE

2MX16

2M

0 Cel

8,63

YES

YES

BOTTOM

R-PBGA-B44

1.95 V

1 mm

100000 Write/Erase Cycles

5 mm

Not Qualified

BOTTOM

33554432 bit

1.7 V

NOR TYPE

.00005 Amp

7.5 mm

YES

70 ns

1.8

YES

K8F1315ETM-DC1F

Samsung

FLASH

COMMERCIAL

64

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

16K,64K

55 mA

33554432 words

1.8

YES

1.8

16

GRID ARRAY, FINE PITCH

BGA64,10X14,20

Flash Memories

.5 mm

70 Cel

32MX16

32M

0 Cel

4,511

YES

YES

BOTTOM

R-PBGA-B64

Not Qualified

TOP

536870912 bit

NOR TYPE

.00002 Amp

YES

110 ns

YES

K8D6316UTMYI0700

Samsung

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4194304 words

3

16

SMALL OUTLINE, THIN PROFILE

8

.5 mm

85 Cel

4MX16

4M

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

67108864 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

18.4 mm

70 ns

2.7

K8S2815ETC-FC7ET

Samsung

FLASH

COMMERCIAL

44

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

4K,32K

70 mA

8388608 words

1.8

YES

1.8

16

GRID ARRAY, FINE PITCH

BGA44,8X14,20

Flash Memories

.5 mm

70 Cel

8MX16

8M

0 Cel

8, 255

YES

YES

BOTTOM

R-PBGA-B44

Not Qualified

TOP

134217728 bit

NOR TYPE

.00005 Amp

YES

70 ns

YES

K8D6316UTM-YI070

Samsung

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8K,64K

50 mA

4194304 words

3

YES

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

Flash Memories

.5 mm

85 Cel

4MX16

4M

-40 Cel

8,127

YES

YES

DUAL

R-PDSO-G48

1

3.6 V

1.2 mm

12 mm

Not Qualified

TOP

67108864 bit

2.7 V

NOR TYPE

.00003 Amp

18.4 mm

YES

70 ns

2.7

YES

K8D3216UBC-LI07

Samsung

FLASH

INDUSTRIAL

48

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

8K,64K

50 mA

2097152 words

YES

3/3.3

16

GRID ARRAY, FINE PITCH

BGA48,6X8,32

8

Flash Memories

.8 mm

85 Cel

2MX16

2M

-40 Cel

8,63

YES

YES

BOTTOM

R-PBGA-B48

Not Qualified

BOTTOM

33554432 bit

NOR TYPE

.000018 Amp

YES

70 ns

YES

K8A6415ETC-HC7B

Samsung

FLASH

COMMERCIAL

88

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4K,32K

70 mA

4194304 words

1.8

YES

1.8

16

GRID ARRAY, FINE PITCH

BGA88,8X12,32

Flash Memories

.8 mm

70 Cel

4MX16

4M

0 Cel

8,127

YES

BOTTOM

R-PBGA-B88

8 mm

Not Qualified

TOP

67108864 bit

8

NOR TYPE

.00005 Amp

11 mm

YES

70 ns

YES

K8A2815ETM-LC7C

Samsung

FLASH

COMMERCIAL

64

FBGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

4K,32K

55 mA

8388608 words

1.8

YES

1.8

16

GRID ARRAY, FINE PITCH

BGA64,8X8,32

Flash Memories

.8 mm

70 Cel

8MX16

8M

0 Cel

8, 255

YES

YES

BOTTOM

S-PBGA-B64

Not Qualified

TOP

134217728 bit

NOR TYPE

.00005 Amp

YES

70 ns

YES

K9K2G08U0M-YIB00

Samsung

FLASH

INDUSTRIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

268435456 words

3.3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

256MX8

256M

-40 Cel

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

2147483648 bit

2.7 V

CONTAINS ADDITIONAL 64M BIT NAND FLASH

SLC NAND TYPE

18.4 mm

30 ns

2.7

K8S1215ETC-SE1D0

Samsung

FLASH

OTHER

64

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

16K,64K

70 mA

33554432 words

1.8

YES

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA64,10X14,20

Flash Memories

.5 mm

85 Cel

32MX16

32M

-25 Cel

4,511

YES

YES

BOTTOM

R-PBGA-B64

1.95 V

1 mm

Not Qualified

TOP

536870912 bit

1.7 V

TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.00003 Amp

YES

100 ns

1.8

YES

K8D1716UTC-DI07T

Samsung

FLASH

INDUSTRIAL

48

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

8K,64K

50 mA

1048576 words

YES

3/3.3

16

GRID ARRAY, FINE PITCH

BGA48,6X8,32

8

Flash Memories

.8 mm

85 Cel

1MX16

1M

-40 Cel

8,31

YES

TIN SILVER COPPER

YES

BOTTOM

R-PBGA-B48

3

Not Qualified

TOP

16777216 bit

e1

NOR TYPE

.000018 Amp

YES

70 ns

YES

K8S2615ETE-SE7B0

Samsung

FLASH

OTHER

44

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

8388608 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

R-PBGA-B44

1.95 V

1 mm

Not Qualified

TOP

134217728 bit

1.7 V

TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

260

70 ns

1.8

K8S1115EZC-SC1E0

Samsung

FLASH

COMMERCIAL

64

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

64K

70 mA

33554432 words

1.8

YES

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA64,10X14,20

Flash Memories

.5 mm

70 Cel

32MX16

32M

0 Cel

512

YES

BOTTOM

R-PBGA-B64

1.95 V

1 mm

Not Qualified

536870912 bit

1.7 V

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.00003 Amp

YES

100 ns

1.8

YES

K8C5715EBM-DC1C

Samsung

FLASH

COMMERCIAL

167

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

16K,64K

55 mA

16777216 words

1.8

YES

1.8

16

GRID ARRAY, FINE PITCH

BGA167,12X15,32

Flash Memories

.8 mm

70 Cel

16MX16

16M

0 Cel

4,255

YES

YES

BOTTOM

R-PBGA-B167

Not Qualified

BOTTOM

268435456 bit

NOR TYPE

.00002 Amp

YES

100 ns

YES

K8A6415ETC-SC7ET

Samsung

FLASH

COMMERCIAL

88

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4K,32K

70 mA

4194304 words

1.8

YES

1.8

16

GRID ARRAY, FINE PITCH

BGA88,8X12,32

Flash Memories

.8 mm

70 Cel

4MX16

4M

0 Cel

8,127

YES

BOTTOM

R-PBGA-B88

8 mm

Not Qualified

TOP

67108864 bit

8

NOR TYPE

.00005 Amp

11 mm

YES

70 ns

YES

K8S3215EBF-SE7ET

Samsung

FLASH

OTHER

44

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4K,32K

70 mA

2097152 words

1.8

YES

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA44,8X14,20

Flash Memories

.5 mm

85 Cel

3-STATE

2MX16

2M

-25 Cel

8,63

YES

YES

BOTTOM

R-PBGA-B44

1.95 V

1 mm

100000 Write/Erase Cycles

5 mm

Not Qualified

BOTTOM

33554432 bit

1.7 V

NOR TYPE

.00005 Amp

7.5 mm

YES

70 ns

1.8

YES

K8P3215UQB-DI4A0

Samsung

FLASH

INDUSTRIAL

48

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

4K,32K

55 mA

2097152 words

3

YES

3/3.3

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA48,6X8,32

Flash Memories

.8 mm

85 Cel

2MX16

2M

-40 Cel

16,62

YES

YES

BOTTOM

R-PBGA-B48

3

3.6 V

1 mm

6 mm

Not Qualified

BOTTOM/TOP

33554432 bit

2.7 V

8

260

NOR TYPE

.00003 Amp

8 mm

YES

55 ns

2.7

YES

K8A2815EBM-LC7B

Samsung

FLASH

COMMERCIAL

64

FBGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

PARALLEL

4K,32K

55 mA

8388608 words

1.8

YES

1.8

16

GRID ARRAY, FINE PITCH

BGA64,8X8,32

Flash Memories

.8 mm

70 Cel

8MX16

8M

0 Cel

8, 255

YES

YES

BOTTOM

S-PBGA-B64

Not Qualified

BOTTOM

134217728 bit

NOR TYPE

.00005 Amp

YES

90 ns

YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.