Samsung Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K8S6615ETD-DE7B0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm			Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K8D3216UBCFI0900	Samsung	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8		.8 mm	85 Cel		2MX16	2M	-40 Cel					BOTTOM	R-PBGA-B48		3.6 V	1 mm		6 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V						NOR TYPE		8.5 mm		90 ns	2.7
K8F1315EBM-FE1E	Samsung	FLASH	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B64						Not Qualified	BOTTOM	536870912 bit							NOR TYPE	.00002 Amp		YES	110 ns		YES
K9HCG08U1D-ICB00	Samsung	FLASH	COMMERCIAL	52	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					70 Cel		8GX8	8G	0 Cel					BOTTOM	R-PBGA-B52		3.6 V	1 mm		12 mm			68719476736 bit	2.7 V						SLC NAND TYPE		17 mm			3.3
K8A6415EBC-HE7B0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		4MX16	4M	-25 Cel	8,127	YES			BOTTOM	R-PBGA-B88	3	1.95 V	1.1 mm		8 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8			260	NOR TYPE	.00005 Amp	11 mm	YES	70 ns	1.8	YES
K9F4G08U0B000000	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			536870912 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		512MX8	512M	0 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm			4294967296 bit	2.7 V								18.4 mm		25 ns	3.3
K8D1716UBC-YI070	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES		YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V				30	240	NOR TYPE	.000018 Amp	18.4 mm	YES	70 ns	2.7	YES
K8C1015EBM-DE1C	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167						Not Qualified	BOTTOM	536870912 bit							NOR TYPE	.00002 Amp		YES	110 ns		YES
K8C5515ETM-DE1FT	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167						Not Qualified	TOP	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
KFM1G16Q2C-DEB8	Samsung	FLASH	OTHER	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY				.8 mm	85 Cel		64MX16	64M	-30 Cel					BOTTOM	R-PBGA-B63		1.95 V	1 mm		10 mm	Not Qualified	BOTTOM	1073741824 bit	1.7 V	BOTTOM BOOT BLOCK							13 mm		76 ns	1.8
K8P2815UQB-DC4C0	Samsung	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA80,8X12,32		Flash Memories	1 mm	70 Cel		8MX16	8M	0 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		11 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V		8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	13 mm	YES	65 ns	2.7	YES
K9K1216Q0C-DIB0	Samsung	FLASH	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K	20 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		32MX16	32M	-40 Cel	4K	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B63						Not Qualified		536870912 bit			256	e0				.00005 Amp			55 ns		NO
K8D3216UTC-PI080	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	DUAL	R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified	TOP	33554432 bit	2.7 V						NOR TYPE	.000018 Amp	18.4 mm	YES	80 ns	2.7	YES
K8A3215EBE-FC7B0	Samsung																																				3													240
K8S5415EZC-DC1C0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel		16MX16	16M	0 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm		6.2 mm	Not Qualified	BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		7.7 mm		100 ns	1.8
K8F5715EBM-DC1DT	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B88						Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
KFM2G16Q2A-DEB8T	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	134217728 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		128MX16	128M	-30 Cel	2K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3					Not Qualified		2147483648 bit			1K	e1		260	SLC NAND TYPE	.00005 Amp			9 ns		NO
K8C5715EBM-DE1E	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167						Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8A6415ETC-FC7CT	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES			BOTTOM	R-PBGA-B88					8 mm	Not Qualified	TOP	67108864 bit			8				NOR TYPE	.00005 Amp	11 mm	YES	70 ns		YES
K8C1315EBM-DC1D0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	70 Cel		32MX16	32M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B167	2	1.95 V	1.4 mm		10.5 mm	Not Qualified	BOTTOM	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1			NOR TYPE		14 mm		110 ns	1.8
K8F5615ETM-FC1D0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B88		1.95 V	1.2 mm		8 mm	Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0			NOR TYPE	.00002 Amp	11 mm	YES	100 ns	1.8	YES
K8C1115ETM-DE1C0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B167		1.95 V	1.4 mm		10.5 mm		TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							14 mm		110 ns	1.8
KFG5616Q1M-PEB0	Samsung	FLASH	OTHER	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		32K	25 mA	16777216 words	1.8	NO	1.8	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel		16MX16	16M	-30 Cel	512	YES	MATTE TIN	YES	DUAL	R-PDSO-G48	1					Not Qualified		262144 bit			512	e3				.00005 Amp			14.5 ns		NO
K9F2808U0C-FCB0	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K	20 mA	16777216 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20		Flash Memories	.5 mm	70 Cel		16MX8	16M	0 Cel	1K	YES		YES	DUAL	R-PDSO-G48	3					Not Qualified		134217728 bit			512				SLC NAND TYPE	.00005 Amp			30 ns		NO
K8A6415EBC-HE7E0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		4MX16	4M	-25 Cel	8,127	YES			BOTTOM	R-PBGA-B88	3	1.95 V	1.1 mm		8 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8			260	NOR TYPE	.00005 Amp	11 mm	YES	70 ns	1.8	YES
K8S2815EBE-SC7C0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel		8MX16	8M	0 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm			Not Qualified	BOTTOM	134217728 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
KFG1216U2A-FED60	Samsung	FLASH	OTHER	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3.3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-30 Cel			TIN LEAD		BOTTOM	R-PBGA-B63		3.6 V	1 mm		9.5 mm	Not Qualified		536870912 bit	2.7 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE		e0					12 mm		76 ns	2.7
K8F1315ETM-SC1F0	Samsung	FLASH	COMMERCIAL	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel		32MX16	32M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	2	1.95 V	1 mm		9 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1			NOR TYPE		11 mm		110 ns	1.8
K9HBG08U1M-IIB00	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		256K	35 mA	4294967296 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories		85 Cel		4GX8	4G	-40 Cel	16K	YES		YES	BOTTOM							Not Qualified		34359738368 bit			2K					.0001 Amp			20 ns		NO
K8S3315EBF-SC7C0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20			.5 mm	70 Cel	3-STATE	2MX16	2M	0 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B44		1.95 V	1 mm	100000 Write/Erase Cycles	5 mm		BOTTOM	33554432 bit	1.7 V						NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K8S2815EBE-DE7CT	Samsung
K9F6408U0C-BIB00	Samsung	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K	20 mA	8388608 words	3.3	NO	3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories	.8 mm	85 Cel		8MX8	8M	-40 Cel	1K	YES		YES	BOTTOM	R-PBGA-B48		3.6 V	1 mm		6 mm	Not Qualified		67108864 bit	2.7 V	CONTAINS ADDITIONAL 2M BIT NAND FLASH	512		NOT SPECIFIED	NOT SPECIFIED		.00005 Amp	8.5 mm		35 ns	2.7	NO
K8P1615UQB-PC4DT	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		4K,32K	55 mA	1048576 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	70 Cel		1MX16	1M	0 Cel	16,30	YES		YES	DUAL	R-PDSO-G48						Not Qualified	BOTTOM/TOP	16777216 bit			8				NOR TYPE	.00003 Amp		YES	70 ns		YES
K8A5615EBC-DE1DT	Samsung
K8P3315UQB-PI4C	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			2097152 words	3			16	SMALL OUTLINE				.5 mm	85 Cel		2MX16	2M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM/TOP	33554432 bit	2.7 V	TOP AND BOTTOM BOOT BLOCK							18.4 mm		65 ns	3
SMFDV032	Samsung	FLASH CARD	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS			33554432 words	3.3			8	MICROELECTRONIC ASSEMBLY					55 Cel		32MX8	32M	0 Cel					UNSPECIFIED	R-XXMA-N22		3.6 V				Not Qualified		268435456 bit	2.7 V	CONTAINS ADDITIONAL 8M BIT NAND FLASH									35 ns	2.7
K8S5615EBB-FE1D0	Samsung
K9F2808U0C-FIB0	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K	20 mA	16777216 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20		Flash Memories	.5 mm	85 Cel		16MX8	16M	-40 Cel	1K	YES		YES	DUAL	R-PDSO-G48	3					Not Qualified		134217728 bit			512				SLC NAND TYPE	.00005 Amp			30 ns		NO
K9K1208Q0C-JCB00	Samsung	FLASH	COMMERCIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K	20 mA	67108864 words	1.8	NO	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	70 Cel		64MX8	64M	0 Cel	4K	YES		YES	BOTTOM	R-PBGA-B63		1.95 V	1.2 mm		9 mm	Not Qualified		536870912 bit	1.7 V		512					.00005 Amp	11 mm		35 ns	1.8	NO
K8A5615EBC-DC1D0	Samsung
KFG1216Q2A-DID60	Samsung	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	2	1.95 V	1 mm		9.5 mm	Not Qualified		536870912 bit	1.7 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE		e1					12 mm		76 ns	1.8
K8S1115ETC-SE1E0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B64		1.95 V	1 mm			Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				260	NOR TYPE	.00003 Amp		YES	100 ns	1.8	YES
K8D3216UTC-YI07	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	50 mA	2097152 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48						Not Qualified	TOP	33554432 bit				e0			NOR TYPE	.000018 Amp		YES	70 ns		YES
K8S2815ETE-FC7DT	Samsung
K8S5615EZB-SC1D0	Samsung
K8D6316UBM-YI07	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	50 mA	4194304 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48						Not Qualified	BOTTOM	67108864 bit				e0			NOR TYPE	.00003 Amp		YES	70 ns		YES
K9K1G08U0A-VIB0	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K	30 mA	134217728 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20		Flash Memories	.5 mm	85 Cel		128MX8	128M	-40 Cel	8K	YES	Tin/Lead (Sn/Pb)	YES	DUAL	R-PDSO-G48						Not Qualified		1073741824 bit			512	e0				.00005 Amp			30 ns		NO
K9LBG08U0D-PIB00	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			8589934592 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		8GX8	8G	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12.4 mm			68719476736 bit	2.7 V	WD-MAX					SLC NAND TYPE		18.4 mm			3.3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.