Samsung Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K8P2815UQB-DC4D0	Samsung	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA80,8X12,32		Flash Memories		1 mm	70 Cel		8MX16	8M	0 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	11 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V		8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp	13 mm	YES	70 ns	2.7	YES
K9K1G08U0M-YCB0T	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K	30 mA	134217728 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		128MX8	128M	0 Cel	8K	YES		YES	DUAL	R-PDSO-G48	3				Not Qualified		1073741824 bit			512			240	SLC NAND TYPE	.00005 Amp			35 ns		NO
K9WBG08U1M-ICB0T	Samsung	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		256K	35 mA	4294967296 words	3.3	NO	3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories			70 Cel		4GX8	4G	0 Cel	16K	YES		YES	BOTTOM						Not Qualified		34359738368 bit			4K					.0001 Amp			20 ns		NO
K8S5515EZC-SE1C0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm	6.2 mm	Not Qualified	BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		7.7 mm		100 ns	1.8
K8P6415UQB-PI4A0	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		4MX16	4M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V						NOR TYPE		18.4 mm		55 ns	2.7
KFG1216U2A-DID50	Samsung	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3.3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		32MX16	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	2	3.6 V	1 mm	9.5 mm	Not Qualified		536870912 bit	2.7 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE		e1					12 mm		76 ns	2.7
K9K8G08U1A-ICB0	Samsung	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	30 mA	1073741824 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories			70 Cel		1GX8	1G	0 Cel	8K	YES	MATTE TIN	YES	BOTTOM		1				Not Qualified		8589934592 bit			2K	e3				.00005 Amp			20 ns		NO
KFN2G16Q2M-DEB6T	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	134217728 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		128MX16	128M	-30 Cel	2K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1				Not Qualified		2147483648 bit			1K	e3			SLC NAND TYPE	.00005 Amp			76 ns		NO
K8D6316UBM-PC070	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories		.5 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES		YES	DUAL	R-PDSO-G48	2	3.6 V	1.2 mm	12 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V						NOR TYPE	.00003 Amp	18.4 mm	YES	70 ns	2.7	YES
K8D3216UBC-FC07	Samsung	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	70 Cel		2MX16	2M	0 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B48					Not Qualified	BOTTOM	33554432 bit							NOR TYPE	.000018 Amp		YES	70 ns		YES
K8F5615EBM-FE1F0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B88		1.95 V	1.2 mm	8 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0			NOR TYPE	.00002 Amp	11 mm	YES	100 ns	1.8	YES
K9F2816U0C-DCB00	Samsung	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3.3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	70 Cel		8MX16	8M	0 Cel					BOTTOM	R-PBGA-B63		3.6 V	1 mm	9 mm	Not Qualified		134217728 bit	2.7 V	CONTAINS ADDITIONAL 4M BIT NAND FLASH					SLC NAND TYPE		11 mm		30 ns	2.7
K8S5615EBB-FC1DT	Samsung
K9MDG08U5D-PIB00	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			8589934592 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		8GX8	8G	-40 Cel					DUAL	R-PDSO-G48		3.6 V	2.35 mm	12.4 mm			68719476736 bit	2.7 V	LG-MAX,WD-MAX					SLC NAND TYPE		18.8 mm			3.3
KFG5616U1A-PIB5	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		32K	40 mA	16777216 words	3.3	NO	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		16MX16	16M	-40 Cel	512	YES	MATTE TIN	YES	DUAL	R-PDSO-G48	1				Not Qualified		262144 bit			512	e3			SLC NAND TYPE	.00008 Amp			14.5 ns		NO
K8F1315ETM-DC1F0	Samsung	FLASH	COMMERCIAL	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	70 Cel		32MX16	32M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B64	2	1.95 V	1 mm	9 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e1			NOR TYPE		11 mm		110 ns	1.8
SMFV004A	Samsung	FLASH CARD	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			8	MICROELECTRONIC ASSEMBLY						55 Cel		4MX8	4M	0 Cel					UNSPECIFIED	R-XXMA-X22		3.6 V			Not Qualified		33554432 bit	3 V										35 ns	3
K8S2815ETC-FC7B0	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	70 Cel		8MX16	8M	0 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44					Not Qualified	TOP	134217728 bit							NOR TYPE	.00005 Amp		YES	70 ns		YES
K8P6415UQB-DI4C	Samsung	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	4194304 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	16,126	YES		YES	BOTTOM	R-PBGA-B48	3				Not Qualified	BOTTOM/TOP	67108864 bit			8			260	NOR TYPE	.00003 Amp		YES	65 ns		YES
K8A2815EBM-TC7C0	Samsung	FLASH	COMMERCIAL	64	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	70 Cel		8MX16	8M	0 Cel			TIN LEAD		BOTTOM	S-PBGA-B64		1.95 V	1 mm	9 mm	Not Qualified		134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0					9 mm		70 ns	1.8
KFG1G16Q2M-DEB6	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		64MX16	64M	-30 Cel	1K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1				Not Qualified		1073741824 bit			1K	e3			SLC NAND TYPE	.00005 Amp			11.5 ns		NO
K8D3216UTC-TI09T	Samsung	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B48					Not Qualified	TOP	33554432 bit							NOR TYPE	.000018 Amp		YES	90 ns		YES
K8C1115ETM-FE1D0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH					.8 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B167		1.95 V	1.4 mm	10.5 mm		TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							14 mm		110 ns	1.8
K8S2815EBC-SC7CT	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	70 Cel		8MX16	8M	0 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44					Not Qualified	BOTTOM	134217728 bit							NOR TYPE	.00005 Amp		YES	70 ns		YES
K9K8G08U0A-PIB0	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	35 mA	1073741824 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		1GX8	1G	-40 Cel	8K	YES	TIN BISMUTH	YES	DUAL	R-PDSO-G48	3				Not Qualified		8589934592 bit			2K	e6		260		.0001 Amp			25 ns		NO
KM29V16000AIT	Samsung	FLASH	INDUSTRIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K	20 mA	2097152 words	3.3	NO	3.3,3.3/5	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories	10	.8 mm	85 Cel	3-STATE	2MX8	2M	-40 Cel	512	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		3.6 V	1.2 mm	10.16 mm	Not Qualified		16777216 bit	3 V	HARDWARE DATA PROTECTION; 1M PROGRAM/ERASE CYCLES; DATA RETENTION 10 YEARS; BLOCK ERASE	256	e0				.00005 Amp	18.41 mm		45 ns	3	NO
K8S2615EBE-FE7DT	Samsung
K9K1208U0C-JCB0	Samsung	FLASH	COMMERCIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K	40 mA	67108864 words	3.3	NO	3.3	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		64MX8	64M	0 Cel	4K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1				Not Qualified		536870912 bit			512	e3				.00005 Amp			30 ns		NO
K8A5615EBC-FE1CT	Samsung
K9NBG08U5A-PCB0	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	35 mA	4294967296 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		4GX8	4G	0 Cel	32K	YES		YES	DUAL	R-PDSO-G48					Not Qualified		34359738368 bit			2K					.0001 Amp			45 ns		NO
K8D1716UBC-FI070	Samsung	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES		YES	BOTTOM	R-PBGA-B48		3.6 V	1 mm	6 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000018 Amp	8.5 mm	YES	70 ns	2.7	YES
K8A2815ETM-TI7C0	Samsung	FLASH	INDUSTRIAL	64	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		8MX16	8M	-40 Cel			TIN LEAD		BOTTOM	S-PBGA-B64		1.95 V	1 mm	9 mm	Not Qualified		134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0					9 mm		70 ns	1.8
K8P2815UQC-GE4B0	Samsung	FLASH	OTHER	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA80,8X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-25 Cel	16,254	YES		YES	BOTTOM	R-PBGA-B80		3.6 V	1 mm	8 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	BOTTOM BOOT BLOCK, TOP BOOT BLOCK	8			260	NOR TYPE	.00003 Amp	11 mm	YES	65 ns	3	YES
K8S5715EBB-DE1F0	Samsung
K8S6815ETD-HE7E0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm			TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
KFG5616U1A-DIB50	Samsung	FLASH	INDUSTRIAL	67	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	32K	40 mA	16777216 words	3.3	NO	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA67,8X10,32		Flash Memories		.8 mm	85 Cel		16MX16	16M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B67	3	3.6 V	1 mm	7 mm	Not Qualified		268435456 bit	2.7 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE	512	e1		260	SLC NAND TYPE	.00008 Amp	9 mm		76 ns	2.7	NO
K8A6415EBB-FE7BT	Samsung																																					3												240
K8A6415ETC-FC7C	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES			BOTTOM	R-PBGA-B88				8 mm	Not Qualified	TOP	67108864 bit			8				NOR TYPE	.00005 Amp	11 mm	YES	70 ns		YES
KFG1G16U2M-DIB60	Samsung	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3.3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		64MX16	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B63	2	3.6 V	1 mm	10 mm	Not Qualified		1073741824 bit	2.7 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE		e1					13 mm		76 ns	2.7
K8D6316UBM-DC08	Samsung	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	4194304 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B48					Not Qualified	BOTTOM	67108864 bit							NOR TYPE	.00003 Amp		YES	80 ns		YES
K8S5515ETC-DC1F0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	70 Cel		16MX16	16M	0 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm		Not Qualified	TOP	268435456 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE				100 ns	1.8
K9F3208U0B-TCB0	Samsung	FLASH	COMMERCIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.8 mm	70 Cel		4MX8	4M	0 Cel					DUAL	R-PDSO-G40		3.6 V	1.2 mm	10.16 mm	Not Qualified		33554432 bit	2.7 V								18.41 mm		35 ns	2.7
K9WAG08U1B-IIB0	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	35 mA	2147483648 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories			85 Cel		2GX8	2G	-40 Cel	16K	YES		YES	BOTTOM						Not Qualified		17179869184 bit			2K					.0002 Amp			25 ns		NO
K8S2615ETE-DC7ET	Samsung
K8P3215UQB-PC4B0	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		2MX16	2M	0 Cel	16,62	YES		YES	DUAL	R-PDSO-G48	3	3.6 V	1.2 mm	12 mm	Not Qualified	BOTTOM/TOP	33554432 bit	2.7 V		8			260	NOR TYPE	.00003 Amp	18.4 mm	YES	60 ns	2.7	YES
K8S5715ETC-SC1E0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	70 Cel		16MX16	16M	0 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm	6.2 mm	Not Qualified	TOP	268435456 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		7.7 mm		100 ns	1.8
K8S1015ETC-DE1F0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B64		1.95 V	1 mm		Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE				100 ns	1.8
K9F2808U0B-BIB0	Samsung	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K	20 mA	16777216 words	3.3	NO	3.3	8	GRID ARRAY, FINE PITCH	BGA48,6X8,30		Flash Memories		.75 mm	85 Cel		16MX8	16M	-40 Cel	1K	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48					Not Qualified		134217728 bit			512	e0			SLC NAND TYPE	.00005 Amp			35 ns		NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.