Samsung Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K8A6215ETC-DC7D0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel		4MX16	4M	0 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm		8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11 mm		70 ns	1.8
K8C1215EBM-DE1C	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167						Not Qualified	BOTTOM	536870912 bit							NOR TYPE	.00002 Amp		YES	110 ns		YES
KFG5616U1A-PIB60	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			16777216 words	3.3			16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		16MX16	16M	-40 Cel					DUAL	R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified		268435456 bit	2.7 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE				260			18.4 mm		76 ns	2.7
KFG1216U2M-DIB0	Samsung	FLASH	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	20 mA	33554432 words	3.3	NO	3.3	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		32MX16	32M	-40 Cel	512	YES		YES	BOTTOM	R-PBGA-B63						Not Qualified		536870912 bit			1K				MLC NAND TYPE	.00005 Amp			14.5 ns		NO
K8D3216UTCPC0900	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	70 Cel		2MX16	2M	0 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	TOP	33554432 bit	2.7 V						NOR TYPE		18.4 mm		90 ns	2.7
K9W4G16U1M-ECB0	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		64K	30 mA	134217728 words		NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20		Flash Memories	.5 mm	70 Cel		128MX16	128M	0 Cel	2K	YES		YES	DUAL	R-PDSO-G48						Not Qualified		2147483648 bit			1K					.0001 Amp					NO
K8S2815ETB-DC7B	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel		8MX16	8M	0 Cel	8, 255	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B44	2	1.95 V	1 mm		7.5 mm	Not Qualified	TOP	134217728 bit	1.7 V			e1			NOR TYPE	.00005 Amp	8.5 mm	YES	90 ns	1.8	YES
K8C1315ETM-FE1F0	Samsung	FLASH	OTHER	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B167	3	1.95 V	1.4 mm		10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e0		240	NOR TYPE	.00002 Amp	14 mm	YES	110 ns	1.8	YES
K9W4G16U1M-KCB00	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			16	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		128MX16	128M	0 Cel					DUAL	R-PDSO-G48		3.6 V	1.15 mm		12 mm	Not Qualified		2147483648 bit	2.7 V	CONTAINS ADDITIONAL 64M BIT NAND FLASH					SLC NAND TYPE		15.4 mm			2.7
K8D6316UBM-DI08	Samsung	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	4194304 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B48						Not Qualified	BOTTOM	67108864 bit							NOR TYPE	.00003 Amp		YES	80 ns		YES
KFW8G16Q2M-DEB6T	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K		536870912 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		512MX16	512M	-30 Cel	8K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1					Not Qualified		8589934592 bit			1K	e3			SLC NAND TYPE				76 ns		NO
K8S1215EBC-SC1C0	Samsung	FLASH	COMMERCIAL	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel		32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B64		1.95 V	1 mm			Not Qualified	BOTTOM	536870912 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp		YES	100 ns	1.8	YES
K8S1215ETC-FE1D0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B64	1	1.95 V	1 mm			Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE	.00003 Amp		YES	100 ns	1.8	YES
K8S2815ETC-FC7E	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel		8MX16	8M	0 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44						Not Qualified	TOP	134217728 bit							NOR TYPE	.00005 Amp		YES	70 ns		YES
K8A2815EBB-EE7C	Samsung	FLASH	OTHER		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY					85 Cel		8MX16	8M	-25 Cel			TIN LEAD		BOTTOM	R-PBGA-B		1.95 V				Not Qualified		134217728 bit	1.7 V			e0							80 ns	1.8
K8S6615EBD-SE7E0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		4MX16	4M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm				BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K9E2G08U0M-YIB00	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		256MX8	256M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		2147483648 bit	2.7 V	CONTAINS ADDITIONAL 64M BIT SPARE MEMORY							18.4 mm		30 ns	2.7
K9K8G08U1A-I	Samsung	FLASH		52	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	ASYNCHRONOUS			1073741824 words	3.3			8	GRID ARRAY, VERY THIN PROFILE				2 mm			1GX8	1G						BOTTOM	R-PBGA-B52		3.6 V	.65 mm		12 mm	Not Qualified		8589934592 bit	2.7 V								17 mm			2.7
K8S6815ETD-SC7E0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel		4MX16	4M	0 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm				TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K8D6316UBM-FI070	Samsung	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48		3.6 V	1 mm		6 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V			e0			NOR TYPE	.00003 Amp	9 mm	YES	70 ns	2.7	YES
K8C5515EBM-DC1FT	Samsung	FLASH	COMMERCIAL	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167						Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
KFM4GH6Q4M-DEB8T	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		256K	35 mA	268435456 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		256MX16	256M	-30 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3					Not Qualified		4294967296 bit			2K	e1		260	MLC NAND TYPE	.00005 Amp			76 ns		NO
K9K1216U0C-GCB0T	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K	40 mA	33554432 words	3.3	NO	3.3	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		32MX16	32M	0 Cel	4K	YES		YES	BOTTOM	R-PBGA-B63	1					Not Qualified		536870912 bit			256					.00005 Amp			45 ns		NO
K8S5715EZB-DC1ET	Samsung
K8S5515EBB-DC1ET	Samsung
K9K1208Q0C-GCB0	Samsung	FLASH	COMMERCIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K	20 mA	67108864 words	1.8	NO	1.8	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	70 Cel		64MX8	64M	0 Cel	4K	YES		YES	BOTTOM	R-PBGA-B63	1					Not Qualified		536870912 bit			512					.00005 Amp			40 ns		NO
K8S5515ETC-FE1C0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm			Not Qualified	TOP	268435456 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE				100 ns	1.8
K9F2816U0C-PIB00	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			8388608 words	3.3			16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		8MX16	8M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		134217728 bit	2.7 V	CONTAINS ADDITIONAL 4M BIT NAND FLASH			NOT SPECIFIED	260	SLC NAND TYPE		18.4 mm		30 ns	2.7
K9K1216Q0C-GIB00	Samsung	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K	20 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		32MX16	32M	-40 Cel	4K	YES		YES	BOTTOM	R-PBGA-B63		1.95 V	1.2 mm		9 mm	Not Qualified		536870912 bit	1.7 V		256					.00005 Amp	11 mm		40 ns	1.8	NO
K9K1G16Q0A-JIB00	Samsung	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		16MX16	16M	-40 Cel					BOTTOM	R-PBGA-B63		1.95 V	1.2 mm		8.5 mm	Not Qualified		268435456 bit	1.7 V						SLC NAND TYPE		16 mm		40 ns	1.8
KFG2G16Q2M-DEB6T	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	134217728 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		128MX16	128M	-30 Cel	2K	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1					Not Qualified		2147483648 bit			1K	e3			SLC NAND TYPE	.00005 Amp			76 ns		NO
K8S3215ETF-DE7ET	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel	3-STATE	2MX16	2M	-25 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B44	3	1.95 V	1 mm	100000 Write/Erase Cycles	5 mm	Not Qualified	TOP	33554432 bit	1.7 V					260	NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K9E2G08U0M-VCB00	Samsung	FLASH	COMMERCIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel		256MX8	256M	0 Cel					DUAL	R-PDSO-G48		3.6 V	.7 mm		12 mm	Not Qualified		2147483648 bit	2.7 V	CONTAINS ADDITIONAL 64M BIT SPARE MEMORY							15.4 mm		30 ns	2.7
K8S5615EBA-DE7CT	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel		16MX16	16M	-25 Cel	8, 511	YES			BOTTOM	R-PBGA-B44						Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00007 Amp		YES	70 ns		YES
K8A5615EBC-DC1CT	Samsung
K8S2615EBE-SE7C0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm			Not Qualified	BOTTOM	134217728 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K8P2815UQC-GC4D0	Samsung	FLASH	COMMERCIAL	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	70 Cel		8MX16	8M	0 Cel					BOTTOM	R-PBGA-B80		3.6 V	1 mm		8 mm	Not Qualified	BOTTOM/TOP	134217728 bit	2.7 V	BOTTOM BOOT BLOCK, TOP BOOT BLOCK							11 mm		70 ns	3
K8S5515EBC-FC1D0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel		16MX16	16M	0 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm		6.2 mm	Not Qualified	BOTTOM	268435456 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		7.7 mm		100 ns	1.8
K8P3315UQB-PI4B0	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel		2MX16	2M	-40 Cel	16,62	YES		YES	DUAL	R-PDSO-G48						Not Qualified	BOTTOM/TOP	33554432 bit			8				NOR TYPE	.00003 Amp		YES	60 ns		YES
K8S3215ETE-SE7C	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel		2MX16	2M	-25 Cel	8,63	YES	TIN SILVER COPPER NICKEL	YES	BOTTOM	R-PBGA-B44	3					Not Qualified	TOP	33554432 bit				e2		260	NOR TYPE	.00005 Amp		YES	80 ns		YES
K8P2716UZC-QI4E0	Samsung	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	128K	55 mA	8388608 words	3	YES	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	TIN BISMUTH	YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm		14 mm	Not Qualified		134217728 bit	2.7 V		8/16	e6		260	NOR TYPE	.00004 Amp	18.4 mm	YES	80 ns	3	YES
K9K1G16U0A-GIB00	Samsung	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	85 Cel		16MX16	16M	-40 Cel					BOTTOM	R-PBGA-B63		3.6 V	1.2 mm		8.5 mm	Not Qualified		268435456 bit	2.7 V	CONTAINS ADDITIONAL 32M BIT NAND FLASH					SLC NAND TYPE		16 mm		30 ns	2.7
K8S1315EBC-SC1D0	Samsung	FLASH	COMMERCIAL	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel		32MX16	32M	0 Cel					BOTTOM	R-PBGA-B64		1.95 V	1 mm				BOTTOM	536870912 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE				100 ns	1.8
K8S6815EBD-DC7D0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel		4MX16	4M	0 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm				BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
KM28U800G-B12	Samsung	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE		16		1.27 mm	70 Cel	3-STATE	1MX8	1M	0 Cel					DUAL	R-PDSO-G44		3.6 V	3.1 mm		12.6 mm	Not Qualified		8388608 bit	2.7 V						NOR TYPE		28.5 mm		120 ns	3
K8S5415ETC-DC1E0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel		16MX16	16M	0 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm		6.2 mm	Not Qualified	TOP	268435456 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		7.7 mm		100 ns	1.8
K9WAG08U1A-IIB0	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	35 mA	2147483648 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories		85 Cel		2GX8	2G	-40 Cel	16K	YES		YES	BOTTOM							Not Qualified		17179869184 bit			2K					.0001 Amp			25 ns		NO
K8F5615ETM-FE1E	Samsung	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B88						Not Qualified	TOP	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.