Samsung Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K8C1015ETM-FE1C	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167	3					Not Qualified	TOP	536870912 bit						240	NOR TYPE	.00002 Amp		YES	110 ns		YES
K8C1315ETM-FE1FT	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167	3					Not Qualified	TOP	536870912 bit						240	NOR TYPE	.00002 Amp		YES	110 ns		YES
K8A6415ETC-DC7B	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES			BOTTOM	R-PBGA-B88					8 mm	Not Qualified	TOP	67108864 bit			8				NOR TYPE	.00005 Amp	11 mm	YES	70 ns		YES
K8P6415UQB-PE4D0	Samsung	FLASH	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel		4MX16	4M	-25 Cel	16,126	YES		YES	DUAL	R-PDSO-G48	3	3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V		8			260	NOR TYPE	.00003 Amp	18.4 mm	YES	70 ns	2.7	YES
K8F1315EBM-SC1E	Samsung	FLASH	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel		32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B64						Not Qualified	BOTTOM	536870912 bit							NOR TYPE	.00002 Amp		YES	110 ns		YES
K8F1215ETM-FC1C0	Samsung	FLASH	COMMERCIAL	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel		32MX16	32M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B64		1.95 V	1 mm		9 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e0			NOR TYPE		11 mm		110 ns	1.8
K9K2G08U1A-IIB00	Samsung	FLASH	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS	128K	30 mA	268435456 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	LGA52(UNSPEC)		Flash Memories		85 Cel		256MX8	256M	-40 Cel	2K	YES		YES	BOTTOM	R-PBGA-B52		3.6 V	.65 mm		12 mm	Not Qualified		2147483648 bit	2.7 V	CONTAINS ADDITIONAL 32M BIT NAND FLASH	2K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	17 mm		20 ns	2.7	NO
K8A6415ETB-SE7B0	Samsung	FLASH	OTHER		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY					85 Cel		4MX16	4M	-25 Cel			TIN SILVER COPPER		BOTTOM	X-PBGA-B	3	1.95 V				Not Qualified		67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1		260					90 ns	1.8
K8S2615ETE-DE7B0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		8MX16	8M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm			Not Qualified	TOP	134217728 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				260					70 ns	1.8
K8S1115ETC-SC1C0	Samsung	FLASH	COMMERCIAL	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel		32MX16	32M	0 Cel					BOTTOM	R-PBGA-B64		1.95 V	1 mm			Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE				100 ns	1.8
K8F5715EBM-FC1F	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B88						Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
KFG5616Q1M-DEB	Samsung	FLASH	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		32K	25 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-30 Cel	512	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B63	1					Not Qualified		262144 bit			512	e3				.00005 Amp			14.5 ns		NO
K9K4G16Q0M-PCB0	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		64K	20 mA	268435456 words	1.8	NO	1.8	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	70 Cel		256MX16	256M	0 Cel	4K	YES		YES	DUAL	R-PDSO-G48						Not Qualified		4294967296 bit			1K					.0001 Amp			30 ns		NO
K8D6316UBM-TC08	Samsung	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	4194304 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B48						Not Qualified	BOTTOM	67108864 bit							NOR TYPE	.00003 Amp		YES	80 ns	2.7	YES
K8D1716UBC-DC07	Samsung	FLASH	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel		1MX16	1M	0 Cel	8,31	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B48	1	3.6 V	1 mm		6 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V			e3			NOR TYPE	.000018 Amp	8.5 mm	YES	70 ns	3	YES
K8A6415ETC-DC7CT	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES			BOTTOM	R-PBGA-B88					8 mm	Not Qualified	TOP	67108864 bit			8				NOR TYPE	.00005 Amp	11 mm	YES	70 ns		YES
K8A6515ETC-FC7C0	Samsung	FLASH	COMMERCIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH				.8 mm	70 Cel		4MX16	4M	0 Cel					BOTTOM	R-PBGA-B88		1.95 V	1.1 mm		8 mm	Not Qualified	TOP	67108864 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							11 mm		70 ns	1.8
K8S3215ETF-SC7B0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel	3-STATE	2MX16	2M	0 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B44	3	1.95 V	1 mm	100000 Write/Erase Cycles	5 mm	Not Qualified	TOP	33554432 bit	1.7 V					260	NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K8D6316UTM-TC08T	Samsung	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	4194304 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B48						Not Qualified	TOP	67108864 bit							NOR TYPE	.00003 Amp		YES	80 ns		YES
K9K1G16U0A-JIB0	Samsung	FLASH	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K	30 mA	67108864 words	3.3	NO	3.3	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		64MX16	64M	-40 Cel	8K	YES		YES	BOTTOM	R-PBGA-B63						Not Qualified		1073741824 bit			256					.0001 Amp			30 ns		NO
K8S1015EBC-FE1E0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B64		1.95 V	1 mm			Not Qualified	BOTTOM	536870912 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE				100 ns	1.8
K8D3216UBC-PC08T	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	50 mA	2097152 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel		2MX16	2M	0 Cel	8,63	YES		YES	DUAL	R-PDSO-G48						Not Qualified	BOTTOM	33554432 bit							NOR TYPE	.000018 Amp		YES	80 ns		YES
K8C5415ETM-FC1ET	Samsung	FLASH	COMMERCIAL	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167	3					Not Qualified	TOP	268435456 bit						240	NOR TYPE	.00002 Amp		YES	100 ns		YES
K9K2G08U0M-PCB0	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	30 mA	268435456 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	70 Cel		256MX8	256M	0 Cel	2K	YES		YES	DUAL	R-PDSO-G48						Not Qualified		2147483648 bit			2K					.0001 Amp			30 ns		NO
K8D6316UBM-PC09T	Samsung	FLASH	COMMERCIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	50 mA	4194304 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES		YES	DUAL	R-PDSO-G56						Not Qualified	BOTTOM	67108864 bit							NOR TYPE	.00003 Amp		YES	90 ns		YES
K8S1315EBC-FC1D0	Samsung	FLASH	COMMERCIAL	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel		32MX16	32M	0 Cel					BOTTOM	R-PBGA-B64		1.95 V	1 mm				BOTTOM	536870912 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE				100 ns	1.8
KFG1G16Q2A-DEB60	Samsung	FLASH	OTHER	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	30 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		64MX16	64M	-30 Cel	1K	YES		YES	BOTTOM	R-PBGA-B63		1.95 V	1 mm		10 mm	Not Qualified		1073741824 bit	1.7 V	SYNCHRONOUS BURST OPERATION ALSO POSSIBLE	1K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	13 mm		76 ns	1.8	NO
K8A5615ETA-DC7C0	Samsung	FLASH	COMMERCIAL		BGA	UNSPECIFIED	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY					70 Cel		16MX16	16M	0 Cel			TIN SILVER COPPER		BOTTOM	X-PBGA-B	2	1.95 V				Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE				80 ns	1.8
K9HBG08U1M-PIB0T	Samsung	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		256K	35 mA	4294967296 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	85 Cel		4GX8	4G	-40 Cel	16K	YES		YES	DUAL	R-PDSO-G48						Not Qualified		34359738368 bit			2K					.0001 Amp			20 ns		NO
K8S5715EZB-SE1FT	Samsung
K8P3215UQB-DI4AT	Samsung	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32		Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	16,62	YES		YES	BOTTOM	R-PBGA-B48	3					Not Qualified	BOTTOM/TOP	33554432 bit			8			260	NOR TYPE	.00003 Amp		YES	55 ns		YES
K8S5715EZC-FE1F0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm		6.2 mm	Not Qualified	BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		7.7 mm		100 ns	1.8
KM28U800G-B10	Samsung	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			8	SMALL OUTLINE		16		1.27 mm	70 Cel	3-STATE	1MX8	1M	0 Cel					DUAL	R-PDSO-G44		3.6 V	3.1 mm		12.6 mm	Not Qualified		8388608 bit	2.7 V						NOR TYPE		28.5 mm		100 ns	3
KFH4G16Q2M-DEB80	Samsung	FLASH	COMMERCIAL EXTENDED	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	64K	45 mA	262144 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		256KX16	256K	-30 Cel	4K	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B63	3	1.95 V	1.2 mm		10 mm	Not Qualified		4194304 bit	1.7 V		1K	e1		260	SLC NAND TYPE	.0001 Amp	13 mm		76 ns	1.8	NO
K8D6316UTM-FC070	Samsung	FLASH	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48		3.6 V	1 mm		6 mm	Not Qualified	TOP	67108864 bit	2.7 V			e0			NOR TYPE	.00003 Amp	9 mm	YES	70 ns	2.7	YES
K9F4G08U1M-ICB0	Samsung	FLASH	COMMERCIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		128K	30 mA	536870912 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories		70 Cel		512MX8	512M	0 Cel	4K	YES		YES	BOTTOM		1					Not Qualified		4294967296 bit			2K					.00005 Amp			25 ns		NO
K8S1215ETC-SE1E0	Samsung	FLASH	OTHER	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		32MX16	32M	-25 Cel					BOTTOM	R-PBGA-B64		1.95 V	1 mm				TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE				100 ns	1.8
K8S2815ETC-SC7ET	Samsung	FLASH	COMMERCIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel		8MX16	8M	0 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44						Not Qualified	TOP	134217728 bit							NOR TYPE	.00005 Amp		YES	70 ns		YES
KFG1216D2A-FID50	Samsung	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	2.65			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	85 Cel		32MX16	32M	-40 Cel					BOTTOM	R-PBGA-B63		2.9 V	1 mm		9.5 mm	Not Qualified		536870912 bit	2.4 V	SYNCHRONOUS BURST OPERATION IS POSSIBLE							12 mm		76 ns	2.7
K9F2G08U0B-PIB00	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		256MX8	256M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		2147483648 bit	2.7 V	CONTAINS ADDITIONAL 64M BIT NAND FLASH			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		18.4 mm		20 ns	3.3
K8S2615ETE-DC7E0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel		8MX16	8M	0 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm			Not Qualified	TOP	134217728 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				260					70 ns	1.8
K9WBG08U5A-9CB00	Samsung	FLASH	COMMERCIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		256K	30 mA	4294967296 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.63,20		Flash Memories	.5 mm	70 Cel		4GX8	4G	0 Cel	16K	YES		YES	DUAL	R-PDSO-G56						Not Qualified		34359738368 bit			4K					.00005 Amp			20 ns		NO
K8S3215ETF-DC7C0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel	3-STATE	2MX16	2M	0 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B44	3	1.95 V	1 mm	100000 Write/Erase Cycles	5 mm	Not Qualified	TOP	33554432 bit	1.7 V					260	NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K8D6316UTM-YC09T	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	50 mA	4194304 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES		YES	DUAL	R-PDSO-G48						Not Qualified	TOP	67108864 bit							NOR TYPE	.00003 Amp		YES	90 ns		YES
K8S5415ETC-SE1E0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm		6.2 mm	Not Qualified	TOP	268435456 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		7.7 mm		100 ns	1.8
KM28U160T-T12	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			8	SMALL OUTLINE, THIN PROFILE		16		.5 mm	70 Cel		2MX8	2M	0 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		16777216 bit	2.7 V						NOR TYPE		18.4 mm		120 ns	3
K8F5615EBM-DC1ET	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B88						Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8F5715ETM-FE1E0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B88		1.95 V	1.2 mm		8 mm	Not Qualified	TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0			NOR TYPE	.00002 Amp	11 mm	YES	100 ns	1.8	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.