Samsung Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K8C1015ETM-DC1D0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel		32MX16	32M	0 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167	3	1.95 V	1.4 mm		10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE				260	NOR TYPE	.00002 Amp	14 mm	YES	110 ns	1.8	YES
KFWAGH6Q4M-DEB80	Samsung	FLASH	OTHER	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	256K	40 mA	1073741824 words	1.8	NO	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		1GX16	1G	-30 Cel	4K	YES		YES	BOTTOM	R-PBGA-B63		1.95 V	1.4 mm		10 mm	Not Qualified	INDEPENDENT	17179869184 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	2K		NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE	.0001 Amp	13 mm		76 ns	1.8	NO
K8S5715EZB-FC1FT	Samsung
K8D6316UBM-FI07	Samsung	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	4194304 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B48						Not Qualified	BOTTOM	67108864 bit							NOR TYPE	.00003 Amp		YES	70 ns		YES
K8S2815ETC-SE7C0	Samsung	FLASH	OTHER	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	70 mA	8388608 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel		8MX16	8M	-25 Cel	8, 255	YES		YES	BOTTOM	R-PBGA-B44						Not Qualified	TOP	134217728 bit							NOR TYPE	.00005 Amp		YES	70 ns		YES
K8P6415UQB-PE4A0	Samsung	FLASH	COMMERCIAL EXTENDED	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		4MX16	4M	-25 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V						NOR TYPE		18.4 mm		55 ns	2.7
K9G8G08U0M-IIB0	Samsung	FLASH	INDUSTRIAL	52	LGA		PLASTIC/EPOXY	YES		CMOS	NO LEAD	PARALLEL		256K	30 mA	1073741824 words		NO	3/3.3	8	GRID ARRAY	LGA52(UNSPEC)		Flash Memories		85 Cel		1GX8	1G	-40 Cel	4K	YES		YES	BOTTOM							Not Qualified		8589934592 bit			2K					.00005 Amp			20 ns		NO
K8S2615EBE-SC7B0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel		8MX16	8M	0 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm			Not Qualified	BOTTOM	134217728 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K8F5715ETM-FC1C	Samsung	FLASH	COMMERCIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B88						Not Qualified	TOP	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8D6316UTM-DI090	Samsung	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	2	3.6 V	1 mm		6 mm	Not Qualified	TOP	67108864 bit	2.7 V			e1			NOR TYPE	.00003 Amp	9 mm	YES	90 ns	2.7	YES
K8P2815UQB-EI4BT	Samsung	FLASH	INDUSTRIAL	64	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA64,8X8,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-40 Cel	16,254	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3					Not Qualified	BOTTOM/TOP	134217728 bit			8	e1		260	NOR TYPE	.00003 Amp		YES	60 ns		YES
K8S5515EZC-SE1D0	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		55 mA	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm		6.2 mm	Not Qualified	BOTTOM/TOP	268435456 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		7.7 mm		100 ns	1.8
K9K5608U0M-YIB0	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		32MX8	32M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		268435456 bit	2.7 V								18.4 mm		35 ns	2.7
K9K2G16U0M-PCB00	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			16	SMALL OUTLINE, THIN PROFILE				.5 mm	70 Cel		128MX16	128M	0 Cel					DUAL	R-PDSO-G48	2	3.6 V	1.2 mm		12 mm	Not Qualified		2147483648 bit	2.7 V	CONTAINS ADDITIONAL 64M BIT NAND FLASH					SLC NAND TYPE		18.4 mm		30 ns	2.7
K8S2615ETE-FE7DT	Samsung
K9K4G08U0M-PCB0	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	30 mA	536870912 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories	.5 mm	70 Cel		512MX8	512M	0 Cel	4K	YES	TIN BISMUTH	YES	DUAL	R-PDSO-G48	3					Not Qualified		4294967296 bit			2K	e6		260		.0001 Amp			30 ns		NO
K8D6316UBM-DC07	Samsung	FLASH	COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	4194304 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel		4MX16	4M	0 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B48						Not Qualified	BOTTOM	67108864 bit							NOR TYPE	.00003 Amp		YES	70 ns	2.7	YES
KFW8G16Q2M-DEB60	Samsung	FLASH	COMMERCIAL EXTENDED	63	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	64K		524288 words	1.8	NO	1.8	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories	.8 mm	85 Cel		512KX16	512K	-30 Cel	8K	YES		YES	BOTTOM	R-PBGA-B63		1.95 V	1.4 mm		10 mm	Not Qualified		8388608 bit	1.7 V		1K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		13 mm		76 ns	1.8	NO
K8F5715ETM-DE1D	Samsung	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B88						Not Qualified	TOP	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K8C5515EBM-FC1FT	Samsung	FLASH	COMMERCIAL	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167	3					Not Qualified	BOTTOM	268435456 bit						240	NOR TYPE	.00002 Amp		YES	100 ns		YES
K8D3216UBCYC0900	Samsung	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	70 Cel		2MX16	2M	0 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V						NOR TYPE		18.4 mm		90 ns	2.7
K8S5515ETB-SC1ET	Samsung
K8A5715ETC-SC1E0	Samsung
K8C1315ETM-FC1C0	Samsung	FLASH	COMMERCIAL	167	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH				.8 mm	70 Cel		32MX16	32M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B167		1.95 V	1.4 mm		10.5 mm	Not Qualified	TOP	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION IS ALSO POSSIBLE		e0			NOR TYPE		14 mm		110 ns	1.8
K8C1215ETM-FE1D	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167	3					Not Qualified	TOP	536870912 bit						240	NOR TYPE	.00002 Amp		YES	110 ns		YES
K8D3216UTC-PC09T	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		8K,64K	50 mA	2097152 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	70 Cel		2MX16	2M	0 Cel	8,63	YES		YES	DUAL	R-PDSO-G48						Not Qualified	TOP	33554432 bit							NOR TYPE	.000018 Amp		YES	90 ns		YES
K8D3216UBC-LI09T	Samsung	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		8K,64K	50 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B48						Not Qualified	BOTTOM	33554432 bit							NOR TYPE	.000018 Amp		YES	90 ns		YES
K8A6415ETC-HE7CT	Samsung	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		4MX16	4M	-25 Cel	8,127	YES	TIN SILVER COPPER NICKEL		BOTTOM	R-PBGA-B88	3				8 mm	Not Qualified	TOP	67108864 bit			8	e2		260	NOR TYPE	.00005 Amp	11 mm	YES	70 ns		YES
K8S3215ETF-HC7B	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	70 Cel	3-STATE	2MX16	2M	0 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B44	3	1.95 V	1 mm	100000 Write/Erase Cycles	5 mm	Not Qualified	TOP	33554432 bit	1.7 V					260	NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K8S1215ETC-SC1E0	Samsung	FLASH	COMMERCIAL	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel		32MX16	32M	0 Cel					BOTTOM	R-PBGA-B64		1.95 V	1 mm				TOP	536870912 bit	1.7 V	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE				100 ns	1.8
K8C1215EBM-FE1C	Samsung	FLASH	OTHER	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES		YES	BOTTOM	R-PBGA-B167	3					Not Qualified	BOTTOM	536870912 bit						240	NOR TYPE	.00002 Amp		YES	110 ns		YES
K9K8G08U0M-PIB00	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1073741824 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		1GX8	1G	-40 Cel					DUAL	R-PDSO-G48	2	3.6 V	1.2 mm		12 mm	Not Qualified		8589934592 bit	2.7 V	CONTAINS ADDITIONAL 256M BIT SPARE NAND MEMORY							18.4 mm		20 ns	2.7
K9K2G08U0M-VCB00	Samsung	FLASH	COMMERCIAL	48	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH				.5 mm	70 Cel		256MX8	256M	0 Cel					DUAL	R-PDSO-G48		3.6 V	.7 mm		12 mm	Not Qualified		2147483648 bit	2.7 V	CONTAINS ADDITIONAL 64M BIT NAND FLASH					SLC NAND TYPE		15.4 mm		30 ns	2.7
K8D1716UTC-DC09	Samsung	FLASH	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	70 Cel		1MX16	1M	0 Cel	8,31	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B48	1	3.6 V	1 mm		6 mm	Not Qualified	TOP	16777216 bit	2.7 V			e3			NOR TYPE	.000018 Amp	8.5 mm	YES	90 ns	3	YES
K8C5615EBM-DC1F	Samsung	FLASH	COMMERCIAL	167	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	55 mA	16777216 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA167,12X15,32		Flash Memories	.8 mm	70 Cel		16MX16	16M	0 Cel	4,255	YES		YES	BOTTOM	R-PBGA-B167						Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00002 Amp		YES	100 ns		YES
K9F6408U0C-TIB0	Samsung	FLASH	INDUSTRIAL	40	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K	20 mA	8388608 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP40/44,.46,32		Flash Memories	.8 mm	85 Cel		8MX8	8M	-40 Cel	1K	YES	TIN LEAD	YES	DUAL	R-PDSO-G40		3.6 V	1.2 mm		10.16 mm	Not Qualified		67108864 bit	2.7 V		512	e0				.00005 Amp	18.41 mm		35 ns	2.7	NO
K8S1215EZC-SC1D0	Samsung	FLASH	COMMERCIAL	64	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA64,10X14,20		Flash Memories	.5 mm	70 Cel		32MX16	32M	0 Cel	512	YES			BOTTOM	R-PBGA-B64		1.95 V	1 mm			Not Qualified		536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00003 Amp		YES	100 ns	1.8	YES
K8A5615EBC-DE1D0	Samsung
K8A2815ETB-FE7C	Samsung	FLASH	OTHER		BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY					85 Cel		8MX16	8M	-25 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B	2	1.95 V				Not Qualified		134217728 bit	1.7 V			e1							80 ns	1.8
K8S3215ETF-FE7B	Samsung	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel	3-STATE	2MX16	2M	-25 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B44		1.95 V	1 mm	100000 Write/Erase Cycles	5 mm	Not Qualified	TOP	33554432 bit	1.7 V						NOR TYPE	.00005 Amp	7.5 mm	YES	70 ns	1.8	YES
K9F2808U0C-VCB0T	Samsung	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K	20 mA	16777216 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.71,20		Flash Memories	.5 mm	70 Cel		16MX8	16M	0 Cel	1K	YES		YES	DUAL	R-PDSO-G48						Not Qualified		134217728 bit			512					.00005 Amp			30 ns		NO
K8D6316UBMTC0800	Samsung	FLASH	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8		.8 mm	70 Cel		4MX16	4M	0 Cel			TIN LEAD		BOTTOM	R-PBGA-B48		3.6 V	1 mm		6 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V			e0			NOR TYPE		9 mm		80 ns	2.7
K9HCG08U1D-PIB00	Samsung	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			8589934592 words	3.3			8	SMALL OUTLINE, THIN PROFILE				.5 mm	85 Cel		8GX8	8G	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12.4 mm			68719476736 bit	2.7 V	WD-MAX					SLC NAND TYPE		18.4 mm			3.3
K8A6415EBC-FE7B0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		4MX16	4M	-25 Cel	8,127	YES			BOTTOM	R-PBGA-B88	1	1.95 V	1.1 mm		8 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8				NOR TYPE	.00005 Amp	11 mm	YES	70 ns	1.8	YES
K8A6415EBC-FE7E0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		4MX16	4M	-25 Cel	8,127	YES			BOTTOM	R-PBGA-B88	1	1.95 V	1.1 mm		8 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8				NOR TYPE	.00005 Amp	11 mm	YES	70 ns	1.8	YES
K8A6415EBC-SE7D0	Samsung	FLASH	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		4MX16	4M	-25 Cel	8,127	YES			BOTTOM	R-PBGA-B88	3	1.95 V	1.1 mm		8 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8			260	NOR TYPE	.00005 Amp	11 mm	YES	70 ns	1.8	YES
K8S2815EBE-FC7B0	Samsung	FLASH	COMMERCIAL	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.5 mm	70 Cel		8MX16	8M	0 Cel					BOTTOM	R-PBGA-B44		1.95 V	1 mm			Not Qualified	BOTTOM	134217728 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE									70 ns	1.8
K9F2816Q0C-BCB0	Samsung	FLASH	COMMERCIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.8 mm	70 Cel		8MX16	8M	0 Cel					BOTTOM	R-PBGA-B48		1.95 V	1 mm		6 mm	Not Qualified		134217728 bit	1.65 V	CONTAINS ADDITIONAL 4M BIT NAND FLASH					SLC NAND TYPE		8.5 mm		30 ns	1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.