MASK ROM MASK ROM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Output Characteristics Organization No. of Words Code Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Length Maximum Access Time

K3N5C1000E-GC10

Samsung

MASK ROM

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

1048576 words

5

5

16

SMALL OUTLINE

SOP44,.63

8

MASK ROMs

1.27 mm

70 Cel

1MX16

1M

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

5.5 V

3.1 mm

12.6 mm

Not Qualified

16777216 bit

4.5 V

e0

.00005 Amp

28.5 mm

100 ns

KM23V4000DETG

Samsung

MASK ROM

OTHER

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

25 mA

524288 words

3

3/3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.56,20

MASK ROMs

.5 mm

85 Cel

512KX8

512K

-20 Cel

TIN LEAD

DUAL

R-PDSO-G32

3.3 V

1.2 mm

8 mm

Not Qualified

4194304 bit

2.7 V

CAN ALSO OPERATE AT 3V TO 3.6V SUPPLY

e0

.00003 Amp

11.8 mm

95 ns

KM23V16000CT

Samsung

MASK ROM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

1048576 words

3

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

70 Cel

1MX16

1M

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

3.3 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

2.7 V

CAN ALSO BE OPERATED FROM 3.0 TO 3.6 VOLTS

e0

.00003 Amp

18.41 mm

150 ns

KM23C32005BT-10

Samsung

MASK ROM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

150 mA

2097152 words

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

70 Cel

2MX16

2M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

33554432 bit

4.5 V

CONFIGURABLE AS 2M X 16

e0

.00005 Amp

18.41 mm

100 ns

KM23V16101A-25

Samsung

MASK ROM

COMMERCIAL

36

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

2097152 words

3.3

3/3.3

8

IN-LINE

DIP36,.6

MASK ROMs

2.54 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

TIN LEAD

DUAL

R-PDIP-T36

3.6 V

5.08 mm

15.24 mm

Not Qualified

16777216 bit

2.7 V

e0

.03 Amp

45.72 mm

250 ns

K3P7V1000B-TC120

Samsung

MASK ROM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4194304 words

3.3

16

SMALL OUTLINE, THIN PROFILE

8

.8 mm

70 Cel

4MX16

4M

0 Cel

DUAL

R-PDSO-G44

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

18.41 mm

120 ns

KM23V64005BF-12

Samsung

MASK ROM

COMMERCIAL

48

TFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

4194304 words

3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

8

.75 mm

70 Cel

4MX16

4M

0 Cel

BOTTOM

S-PBGA-B48

3.3 V

1.2 mm

9 mm

Not Qualified

67108864 bit

2.7 V

9 mm

120 ns

KM23C8000D-15

Samsung

MASK ROM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

1048576 words

5

5

8

IN-LINE

DIP32,.6

MASK ROMs

2.54 mm

70 Cel

1MX8

1M

0 Cel

TIN LEAD

DUAL

R-PDIP-T32

5.5 V

5.08 mm

15.24 mm

Not Qualified

8388608 bit

4.5 V

e0

.00005 Amp

41.91 mm

150 ns

KM23C8100-15

Samsung

MASK ROM

COMMERCIAL

42

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

1048576 words

5

5

8

IN-LINE

DIP42,.6

16

MASK ROMs

2.54 mm

70 Cel

3-STATE

1MX8

1M

0 Cel

TIN LEAD

DUAL

R-PDIP-T42

5.5 V

5.08 mm

15.24 mm

Not Qualified

8388608 bit

4.5 V

e0

.00005 Amp

52.43 mm

150 ns

KM23C8100B-12

Samsung

MASK ROM

COMMERCIAL

42

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

60 mA

1048576 words

5

5

8

IN-LINE

DIP42,.6

16

MASK ROMs

2.54 mm

70 Cel

3-STATE

1MX8

1M

0 Cel

TIN LEAD

DUAL

R-PDIP-T42

5.5 V

5.08 mm

15.24 mm

Not Qualified

8388608 bit

4.5 V

e0

.00005 Amp

52.43 mm

120 ns

KM2365PI-25

Samsung

MASK ROM

INDUSTRIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

60 mA

8192 words

5

5

8

IN-LINE

DIP28,.6

MASK ROMs

2.54 mm

85 Cel

8KX8

8K

-40 Cel

TIN LEAD

DUAL

R-PDIP-T28

3

Not Qualified

65536 bit

e0

250 ns

KM23C4000-20

Samsung

MASK ROM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

40 mA

524288 words

5

5

8

IN-LINE

DIP32,.6

MASK ROMs

2.54 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-PDIP-T32

5.5 V

5.08 mm

15.24 mm

Not Qualified

4194304 bit

4.5 V

e0

.0001 Amp

41.91 mm

200 ns

KM23C16005DET-15

Samsung

MASK ROM

OTHER

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

5

8

SMALL OUTLINE, THIN PROFILE

.8 mm

85 Cel

2MX8

2M

-20 Cel

DUAL

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

CONFIGURABLE AS 1M X 16

18.41 mm

150 ns

K3N5C1000D-TC10

Samsung

MASK ROM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

1048576 words

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

70 Cel

1MX16

1M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

e0

.00005 Amp

18.41 mm

100 ns

K3N6C4000E-DC10

Samsung

MASK ROM

COMMERCIAL

42

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

2097152 words

5

5

16

IN-LINE

DIP42,.6

MASK ROMs

2.54 mm

70 Cel

2MX16

2M

0 Cel

TIN LEAD

DUAL

R-PDIP-T42

5.5 V

5.08 mm

15.24 mm

Not Qualified

33554432 bit

4.5 V

e0

.00005 Amp

52.42 mm

100 ns

KM23C2100H-12

Samsung

MASK ROM

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

262144 words

5

5

8

IN-LINE

DIP40,.6

16

MASK ROMs

2.54 mm

70 Cel

3-STATE

256KX8

256K

0 Cel

TIN LEAD

DUAL

R-PDIP-T40

5.5 V

5.08 mm

15.24 mm

Not Qualified

2097152 bit

4.5 V

e0

.00005 Amp

52.43 mm

120 ns

KM23C4100DT-12

Samsung

MASK ROM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

262144 words

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

70 Cel

256KX16

256K

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

4.5 V

CONFIGURABLE AS 256K X 16

e0

.00005 Amp

18.41 mm

120 ns

K3N7C1000B-TC100

Samsung

MASK ROM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4194304 words

5

16

SMALL OUTLINE, THIN PROFILE

8

.8 mm

70 Cel

4MX16

4M

0 Cel

DUAL

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

4.5 V

30

240

18.41 mm

100 ns

KM23C4100CT-12

Samsung

MASK ROM

COMMERCIAL

44

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

60 mA

262144 words

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

70 Cel

256KX16

256K

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

3

Not Qualified

4194304 bit

e0

.00005 Amp

120 ns

K3N3U1000D-TE12

Samsung

MASK ROM

OTHER

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

20 mA

262144 words

3

3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

85 Cel

256KX16

256K

-20 Cel

TIN LEAD

DUAL

R-PDSO-G44

3.3 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

2.7 V

ALL INPUTS AND OUTPUTS TTL COMPATIBLE

e0

.00003 Amp

18.41 mm

120 ns

K3N7C1000B-YC150

Samsung

MASK ROM

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4194304 words

5

16

SMALL OUTLINE, THIN PROFILE

8

.5 mm

70 Cel

4MX16

4M

0 Cel

DUAL

R-PDSO-G48

5.5 V

1.2 mm

12 mm

Not Qualified

67108864 bit

4.5 V

30

240

16.4 mm

150 ns

K3P6C1000F-TC150

Samsung

MASK ROM

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

5

16

SMALL OUTLINE

8

.8 mm

70 Cel

2MX16

2M

0 Cel

DUAL

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

33554432 bit

4.5 V

30

240

18.41 mm

150 ns

K3P4C1000E-GC12

Samsung

MASK ROM

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

80 mA

524288 words

5

5

16

SMALL OUTLINE

SOP44,.63

8

MASK ROMs

1.27 mm

70 Cel

512KX16

512K

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

3

Not Qualified

8388608 bit

e0

.00005 Amp

120 ns

K3P4C1000D-DC150

Samsung

MASK ROM

COMMERCIAL

42

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

5

16

IN-LINE

8

2.54 mm

70 Cel

512KX16

512K

0 Cel

DUAL

R-PDIP-T42

5.5 V

5.08 mm

15.24 mm

Not Qualified

8388608 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

52.42 mm

150 ns

KM23C16005AG-20

Samsung

MASK ROM

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

100 mA

2097152 words

5

5

8

SMALL OUTLINE

SOP44,.63

16

MASK ROMs

1.27 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

5.5 V

3.1 mm

12.6 mm

Not Qualified

16777216 bit

4.5 V

e0

.00005 Amp

28.5 mm

200 ns

KM23V4001B-25

Samsung

MASK ROM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

3.3

3/3.3

8

IN-LINE

DIP32,.6

MASK ROMs

2.54 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-PDIP-T32

3.6 V

5.08 mm

15.24 mm

Not Qualified

4194304 bit

2.7 V

e0

.03 Amp

41.91 mm

250 ns

KM23C2000AG-15

Samsung

MASK ROM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

262144 words

5

5

8

SMALL OUTLINE

SOP32,.56

MASK ROMs

1.27 mm

70 Cel

3-STATE

256KX8

256K

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

3 mm

11.43 mm

Not Qualified

2097152 bit

4.5 V

e0

.00005 Amp

20.47 mm

150 ns

KM23C8100HG-15

Samsung

MASK ROM

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

60 mA

1048576 words

5

5

8

SMALL OUTLINE

SOP44,.63

16

MASK ROMs

1.27 mm

70 Cel

3-STATE

1MX8

1M

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

5.5 V

3.1 mm

12.6 mm

Not Qualified

8388608 bit

4.5 V

e0

.00005 Amp

28.5 mm

150 ns

KM23C16000AG-12

Samsung

MASK ROM

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

60 mA

2097152 words

5

5

8

SMALL OUTLINE

SOP44,.63

16

MASK ROMs

1.27 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

5.5 V

3.1 mm

12.6 mm

Not Qualified

16777216 bit

4.5 V

e0

.00005 Amp

28.5 mm

120 ns

K3N5V1000D-GC12

Samsung

MASK ROM

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

16

SMALL OUTLINE

8

1.27 mm

70 Cel

1MX16

1M

0 Cel

DUAL

R-PDSO-G44

3.6 V

3.1 mm

12.6 mm

Not Qualified

16777216 bit

3 V

CONFIGURABLE AS 1M X 16

30

225

28.5 mm

120 ns

KM23C32000CT-15

Samsung

MASK ROM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

2097152 words

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

70 Cel

2MX16

2M

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

33554432 bit

4.5 V

CONFIGURABLE AS 2M X 16

e0

.00005 Amp

18.41 mm

150 ns

KM23V16000DT-10

Samsung

MASK ROM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

1048576 words

3

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

70 Cel

1MX16

1M

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

3.3 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

2.7 V

IT CAN ALSO OPERATE AT 3.3V VCC

e0

.00003 Amp

18.41 mm

100 ns

KM23S4000DTY-25

Samsung

MASK ROM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

2.5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

512KX8

512K

0 Cel

DUAL

R-PDSO-G32

2.7 V

1.2 mm

8 mm

Not Qualified

4194304 bit

2.3 V

18.4 mm

250 ns

KM23C64000BG-15

Samsung

MASK ROM

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

4194304 words

5

5

16

SMALL OUTLINE

SOP44,.63

8

MASK ROMs

1.27 mm

70 Cel

4MX16

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

5.5 V

3.1 mm

12.6 mm

Not Qualified

67108864 bit

4.5 V

CONFIGURABLE AS 4M X 16

e0

.0001 Amp

28.5 mm

150 ns

KM23V4200D-10

Samsung

MASK ROM

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

25 mA

262144 words

3.3

3.3

16

IN-LINE

DIP40,.6

MASK ROMs

2.54 mm

70 Cel

256KX16

256K

0 Cel

TIN LEAD

DUAL

R-PDIP-T40

3.6 V

5.08 mm

15.24 mm

Not Qualified

4194304 bit

3 V

TTL COMPATIBLE I/O

e0

.00003 Amp

52.42 mm

100 ns

K3P6V1000B-GC100

Samsung

MASK ROM

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

3.3

16

SMALL OUTLINE

8

1.27 mm

70 Cel

2MX16

2M

0 Cel

DUAL

R-PDSO-G44

3.6 V

3.1 mm

12.6 mm

Not Qualified

33554432 bit

3 V

30

225

28.5 mm

100 ns

KM23C16005A-12

Samsung

MASK ROM

COMMERCIAL

42

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

100 mA

2097152 words

5

5

8

IN-LINE

DIP42,.6

16

MASK ROMs

2.54 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

TIN LEAD

DUAL

R-PDIP-T42

5.5 V

5.08 mm

15.24 mm

Not Qualified

16777216 bit

4.5 V

e0

.00005 Amp

52.43 mm

120 ns

K3N6C1000E-YC12

Samsung

MASK ROM

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

2097152 words

5

5

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.71,20

8

MASK ROMs

.5 mm

70 Cel

2MX16

2M

0 Cel

TIN LEAD

DUAL

R-PDSO-G48

5.5 V

1.2 mm

12 mm

Not Qualified

33554432 bit

4.5 V

e0

.00005 Amp

16.4 mm

120 ns

KM23C64000BT-12

Samsung

MASK ROM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

4194304 words

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

70 Cel

4MX16

4M

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

4.5 V

CONFIGURABLE AS 4M X 16

e0

.0001 Amp

18.41 mm

120 ns

K3N3U1000D-TE120

Samsung

MASK ROM

OTHER

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

262144 words

3

16

SMALL OUTLINE, THIN PROFILE

8

.8 mm

85 Cel

256KX16

256K

-20 Cel

DUAL

R-PDSO-G44

3.3 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

2.7 V

30

240

18.41 mm

120 ns

KM23C8105DET-12

Samsung

MASK ROM

OTHER

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

80 mA

524288 words

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

85 Cel

512KX16

512K

-20 Cel

TIN LEAD

DUAL

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

8388608 bit

4.5 V

CONFIGURABLE AS 512K X 16

e0

.00005 Amp

18.41 mm

120 ns

K3N7C1000B-YC10

Samsung

MASK ROM

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

4194304 words

5

5

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.71,20

8

MASK ROMs

.5 mm

70 Cel

4MX16

4M

0 Cel

TIN LEAD

DUAL

R-PDSO-G48

5.5 V

1.2 mm

12 mm

Not Qualified

67108864 bit

4.5 V

ALL INPUTS AND OUTPUTS TTL COMPATIBLE

e0

.0001 Amp

16.4 mm

100 ns

KM23V8105DG-10

Samsung

MASK ROM

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

3.3

16

SMALL OUTLINE

8

1.27 mm

70 Cel

512KX16

512K

0 Cel

DUAL

R-PDSO-G44

3.6 V

3.1 mm

12.6 mm

Not Qualified

8388608 bit

3 V

TTL COMPATIBLE I/O

28.5 mm

100 ns

KM23C32120A-15

Samsung

MASK ROM

COMMERCIAL

42

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

60 mA

4194304 words

5

5

8

IN-LINE

DIP42,.6

MASK ROMs

2.54 mm

70 Cel

4MX8

4M

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T42

5.5 V

5.08 mm

15.24 mm

Not Qualified

33554432 bit

4.5 V

e0

.00005 Amp

52.25 mm

150 ns

K3N6V1000C-TE12

Samsung

MASK ROM

OTHER

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

3.3

16

SMALL OUTLINE, THIN PROFILE

8

.8 mm

85 Cel

2MX16

2M

-20 Cel

DUAL

R-PDSO-G44

3.6 V

1.2 mm

10.16 mm

Not Qualified

33554432 bit

3 V

18.41 mm

120 ns

K3N7V1000B-GC10

Samsung

MASK ROM

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

4194304 words

3.3

3.3

16

SMALL OUTLINE

SOP44,.63

8

MASK ROMs

1.27 mm

70 Cel

4MX16

4M

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

3.6 V

3.1 mm

12.6 mm

Not Qualified

67108864 bit

3 V

e0

.00005 Amp

28.5 mm

100 ns

KM23C1011-20

Samsung

MASK ROM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

40 mA

131072 words

5

5

8

IN-LINE

DIP32,.6

MASK ROMs

2.54 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

TIN LEAD

DUAL

R-PDIP-T32

5.5 V

5.08 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e0

.04 Amp

41.91 mm

200 ns

K3N6C1500C-TE15

Samsung

MASK ROM

OTHER

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4194304 words

5

8

SMALL OUTLINE

85 Cel

4MX8

4M

-20 Cel

TIN LEAD

DUAL

R-PDSO-G44

5.5 V

Not Qualified

33554432 bit

4.5 V

ALSO CONFIGURABLE AS 2M X 16

e0

150 ns

MASK ROM

Mask ROM, or Read-Only Memory, is a type of non-volatile computer memory that is programmed during the manufacturing process. Mask ROM is designed to permanently store data and cannot be reprogrammed after it has been manufactured.

Mask ROM is created by a process known as photolithography. This process involves using a mask, or template, to expose specific areas of a silicon wafer to ultraviolet light. The areas that are exposed to the light are then etched away, leaving behind the patterns that make up the memory cells. Once the memory cells have been created, they are permanently programmed with the data that they will store.

Mask ROM is commonly used in devices that require permanent storage of data, such as game consoles, calculators, and other electronic devices. Because the data is permanently programmed during manufacturing, mask ROM provides a reliable and secure way to store critical data, such as system settings, firmware, and other important information.

One of the advantages of using mask ROM is that it is a cost-effective way to produce large quantities of memory. Because the data is programmed during the manufacturing process, the cost per unit is relatively low compared to other types of non-volatile memory, such as EEPROM or flash memory.