MASK ROM MASK ROM 2,400+

Reset All
Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Output Characteristics Organization No. of Words Code Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Length Maximum Access Time

K3P5V1000F-GC12

Samsung

MASK ROM

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

60 mA

1048576 words

3.3

3.3

16

SMALL OUTLINE

SOP44,.63

8

MASK ROMs

1.27 mm

70 Cel

1MX16

1M

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

3.6 V

3.1 mm

12.6 mm

Not Qualified

16777216 bit

3 V

e0

.00003 Amp

28.5 mm

120 ns

K3N4C1000D-TC120

Samsung

MASK ROM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

16

SMALL OUTLINE, THIN PROFILE

8

.8 mm

70 Cel

512KX16

512K

0 Cel

DUAL

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

8388608 bit

4.5 V

30

240

18.41 mm

120 ns

K3N3U1000D-TC120

Samsung

MASK ROM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

262144 words

3

16

SMALL OUTLINE, THIN PROFILE

8

.8 mm

70 Cel

256KX16

256K

0 Cel

DUAL

R-PDSO-G44

3.3 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

2.7 V

30

240

18.41 mm

120 ns

K3N9U1000A-YC12

Samsung

MASK ROM

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

8388608 words

3

3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.71,20

8

MASK ROMs

.5 mm

70 Cel

8MX16

8M

0 Cel

TIN LEAD

DUAL

R-PDSO-G48

3.3 V

1.2 mm

12 mm

Not Qualified

134217728 bit

2.7 V

e0

.00003 Amp

16.4 mm

120 ns

KM23C4001-20

Samsung

MASK ROM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

40 mA

524288 words

5

5

8

IN-LINE

DIP32,.6

MASK ROMs

2.54 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-PDIP-T32

5.5 V

5.08 mm

15.24 mm

Not Qualified

4194304 bit

4.5 V

e0

.04 Amp

41.91 mm

200 ns

KM23C8001AG-20

Samsung

MASK ROM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

1048576 words

5

5

8

SMALL OUTLINE

SOP32,.56

MASK ROMs

1.27 mm

70 Cel

3-STATE

1MX8

1M

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

3 mm

11.43 mm

Not Qualified

8388608 bit

4.5 V

e0

.05 Amp

20.47 mm

200 ns

KM23C4100CET-10

Samsung

MASK ROM

OTHER

44

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

60 mA

262144 words

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

85 Cel

256KX16

256K

-20 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

Not Qualified

4194304 bit

e0

.00005 Amp

100 ns

KM23V4100BFP-15

Samsung

MASK ROM

COMMERCIAL

44

WQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

3.3

3/3.3

8

FLATPACK, WINDOW

QFP44,.7SQ,32

16

MASK ROMs

.8 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

QUAD

S-PQFP-G44

3.6 V

2.8 mm

14 mm

Not Qualified

4194304 bit

2.7 V

e0

.00005 Amp

14 mm

150 ns

KM23256SPI-15

Samsung

MASK ROM

INDUSTRIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

75 mA

32768 words

5

5

8

IN-LINE

DIP28,.6

MASK ROMs

2.54 mm

85 Cel

32KX8

32K

-40 Cel

TIN LEAD

DUAL

R-PDIP-T28

3

Not Qualified

262144 bit

e0

150 ns

KM23V32000BETY-10

Samsung

MASK ROM

OTHER

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4194304 words

3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

4MX8

4M

-20 Cel

DUAL

R-PDSO-G48

3.3 V

1.2 mm

12 mm

Not Qualified

33554432 bit

2.7 V

TTL COMPATIBLE I/O; CONFIGURABLE AS 2M X 16

16.4 mm

100 ns

KM23V8000CG-15

Samsung

MASK ROM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

30 mA

1048576 words

3.3

3.3

8

SMALL OUTLINE

SOP32,.56

MASK ROMs

1.27 mm

70 Cel

1MX8

1M

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

3

Not Qualified

8388608 bit

e0

.00005 Amp

150 ns

K3P4C1000E-TC12

Samsung

MASK ROM

COMMERCIAL

44

TSOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

80 mA

524288 words

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

70 Cel

512KX16

512K

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

3

Not Qualified

8388608 bit

e0

.00005 Amp

120 ns

KM23C8000HG-10

Samsung

MASK ROM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

1048576 words

5

5

8

SMALL OUTLINE

SOP32,.56

MASK ROMs

1.27 mm

70 Cel

3-STATE

1MX8

1M

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

3 mm

11.43 mm

Not Qualified

8388608 bit

4.5 V

e0

.00005 Amp

20.47 mm

100 ns

KM23C4200B-25

Samsung

MASK ROM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

50 mA

262144 words

5

5

16

IN-LINE

DIP32,.6

8

MASK ROMs

2.54 mm

70 Cel

256KX16

256K

0 Cel

TIN LEAD

DUAL

R-PDIP-T32

3

Not Qualified

4194304 bit

e0

.00005 Amp

250 ns

KM2365SJ-20

Samsung

MASK ROM

COMMERCIAL

28

QCCJ

SQUARE

PLASTIC/EPOXY

YES

MOS

J BEND

60 mA

8192 words

5

5

8

CHIP CARRIER

LDCC28,.5SQ

MASK ROMs

1.27 mm

70 Cel

8KX8

8K

0 Cel

TIN LEAD

QUAD

S-PQCC-J28

3

Not Qualified

65536 bit

e0

200 ns

KM23C16005D-15

Samsung

MASK ROM

COMMERCIAL

42

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1048576 words

5

16

IN-LINE

8

2.54 mm

70 Cel

1MX16

1M

0 Cel

DUAL

R-PDIP-T42

5.5 V

5.08 mm

15.24 mm

Not Qualified

16777216 bit

4.5 V

CONFIGURABLE AS 1M X 16

52.42 mm

150 ns

K3N3V(U)3000D-YC

Samsung

MASK ROM

COMMERCIAL

32

TSOP

RECTANGULAR

YES

CMOS

GULL WING

25 mA

524288 words

3/3.3

8

SMALL OUTLINE, THIN PROFILE

TSOP32,.8

MASK ROMs

1.27 mm

70 Cel

512KX8

512K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDSO-G32

Not Qualified

4194304 bit

e0

120 ns

K3N7V1000B-GC100

Samsung

MASK ROM

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4194304 words

3.3

16

SMALL OUTLINE

8

1.27 mm

70 Cel

4MX16

4M

0 Cel

DUAL

R-PDSO-G44

3.6 V

3.1 mm

12.6 mm

Not Qualified

67108864 bit

3 V

30

225

28.5 mm

100 ns

K3N3S3000D-YC250

Samsung

MASK ROM

COMMERCIAL

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

2.5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

512KX8

512K

0 Cel

DUAL

R-PDSO-G32

2.7 V

1.2 mm

8 mm

Not Qualified

4194304 bit

2.3 V

18.4 mm

250 ns

K3N4U1000D-DC120

Samsung

MASK ROM

COMMERCIAL

42

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

3

16

IN-LINE

8

2.54 mm

70 Cel

512KX16

512K

0 Cel

DUAL

R-PDIP-T42

3.3 V

5.08 mm

15.24 mm

Not Qualified

8388608 bit

2.7 V

NOT SPECIFIED

NOT SPECIFIED

52.42 mm

120 ns

KM2365HR-25

Samsung

MASK ROM

MILITARY

28

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

60 mA

8192 words

5

5

8

IN-LINE

DIP28,.6

MASK ROMs

2.54 mm

125 Cel

8KX8

8K

-55 Cel

TIN LEAD

DUAL

R-XDIP-T28

3

Not Qualified

65536 bit

e0

250 ns

KM23C1011G-25

Samsung

MASK ROM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

30 mA

131072 words

5

5

8

SMALL OUTLINE

SOP32,.56

MASK ROMs

1.27 mm

70 Cel

128KX8

128K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G32

Not Qualified

1048576 bit

e0

.03 Amp

250 ns

KM23C64005BT-12

Samsung

MASK ROM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

150 mA

4194304 words

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

70 Cel

4MX16

4M

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

4.5 V

CONFIGURABLE AS 4M X 16

e0

.0001 Amp

18.41 mm

120 ns

KM23C64005BG-12

Samsung

MASK ROM

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

150 mA

4194304 words

5

5

16

SMALL OUTLINE

SOP44,.63

8

MASK ROMs

1.27 mm

70 Cel

4MX16

4M

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

5.5 V

3.1 mm

12.6 mm

Not Qualified

67108864 bit

4.5 V

CONFIGURABLE AS 4M X 16

e0

.0001 Amp

28.5 mm

120 ns

KM23C16000B-20

Samsung

MASK ROM

COMMERCIAL

42

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

60 mA

1048576 words

5

5

16

IN-LINE

DIP42,.6

8

MASK ROMs

2.54 mm

70 Cel

1MX16

1M

0 Cel

TIN LEAD

DUAL

R-PDIP-T42

3

Not Qualified

16777216 bit

e0

.00005 Amp

200 ns

KM23257SJI-25

Samsung

MASK ROM

INDUSTRIAL

28

QCCJ

SQUARE

PLASTIC/EPOXY

YES

MOS

J BEND

75 mA

32768 words

8

CHIP CARRIER

LDCC28,.5SQ

MASK ROMs

1.27 mm

85 Cel

32KX8

32K

-40 Cel

TIN LEAD

QUAD

S-PQCC-J28

3

Not Qualified

262144 bit

e0

250 ns

K3N4V1000D-TE10

Samsung

MASK ROM

OTHER

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

85 Cel

512KX16

512K

-20 Cel

TIN LEAD

DUAL

R-PDSO-G44

3.6 V

1.2 mm

10.16 mm

Not Qualified

8388608 bit

3 V

CONFIGURABLE AS 512K X 16

e0

.00003 Amp

18.41 mm

100 ns

K3P5C1000F-DC12

Samsung

MASK ROM

COMMERCIAL

42

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

150 mA

1048576 words

5

5

16

IN-LINE

DIP42,.6

8

MASK ROMs

2.54 mm

70 Cel

1MX16

1M

0 Cel

TIN LEAD

DUAL

R-PDIP-T42

5.5 V

5.08 mm

15.24 mm

Not Qualified

16777216 bit

4.5 V

ALL INPUTS AND OUTPUTS TTL COMPATIBLE

e0

.00005 Amp

52.42 mm

120 ns

K3P6C1000B-GC150

Samsung

MASK ROM

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

5

16

SMALL OUTLINE

8

1.27 mm

70 Cel

2MX16

2M

0 Cel

DUAL

R-PDSO-G44

5.5 V

3.1 mm

12.6 mm

Not Qualified

33554432 bit

4.5 V

30

225

28.5 mm

150 ns

KM23C32005-20

Samsung

MASK ROM

COMMERCIAL

42

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

100 mA

2097152 words

5

5

16

IN-LINE

DIP42,.6

MASK ROMs

2.54 mm

70 Cel

3-STATE

2MX16

2M

0 Cel

TIN LEAD

DUAL

R-PDIP-T42

5.5 V

5.08 mm

15.24 mm

Not Qualified

33554432 bit

4.5 V

e0

.00005 Amp

52.43 mm

200 ns

K3P5U1000D-DC10

Samsung

MASK ROM

COMMERCIAL

42

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

50 mA

1048576 words

3

3

16

IN-LINE

DIP42,.6

8

MASK ROMs

2.54 mm

70 Cel

1MX16

1M

0 Cel

TIN LEAD

DUAL

R-PDIP-T42

3.3 V

5.08 mm

15.24 mm

Not Qualified

16777216 bit

2.7 V

e0

.00003 Amp

52.42 mm

100 ns

K3N5C1000D-GC15

Samsung

MASK ROM

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

1048576 words

5

5

16

SMALL OUTLINE

SOP44,.63

8

MASK ROMs

1.27 mm

70 Cel

1MX16

1M

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

5.5 V

3.1 mm

12.6 mm

Not Qualified

16777216 bit

4.5 V

ALL INPUTS AND OUTPUTS TTL COMPATIBLE

e0

.00005 Amp

28.5 mm

150 ns

K3P4C1000D-TC120

Samsung

MASK ROM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

16

SMALL OUTLINE, THIN PROFILE

8

.8 mm

70 Cel

512KX16

512K

0 Cel

DUAL

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

8388608 bit

4.5 V

30

240

18.41 mm

120 ns

KM23C8100G-20

Samsung

MASK ROM

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

1048576 words

5

5

8

SMALL OUTLINE

SOP44,.63

16

MASK ROMs

1.27 mm

70 Cel

3-STATE

1MX8

1M

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

5.5 V

3.1 mm

12.6 mm

Not Qualified

8388608 bit

4.5 V

e0

.00005 Amp

28.5 mm

200 ns

KM2365JI-30

Samsung

MASK ROM

INDUSTRIAL

28

QCCJ

SQUARE

PLASTIC/EPOXY

YES

MOS

J BEND

60 mA

8192 words

5

5

8

CHIP CARRIER

LDCC28,.5SQ

MASK ROMs

1.27 mm

85 Cel

8KX8

8K

-40 Cel

TIN LEAD

QUAD

S-PQCC-J28

3

Not Qualified

65536 bit

e0

300 ns

K3P4C1000D-TC100

Samsung

MASK ROM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

5

16

SMALL OUTLINE, THIN PROFILE

8

.8 mm

70 Cel

512KX16

512K

0 Cel

DUAL

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

8388608 bit

4.5 V

30

240

18.41 mm

100 ns

K3S7V2000M-TC12

Samsung

MASK ROM

COMMERCIAL

86

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

100 mA

2097152 words

3.3

3.3

32

SMALL OUTLINE, THIN PROFILE

TSSOP86,.46,20

16

MASK ROMs

.5 mm

70 Cel

2MX32

2M

0 Cel

TIN LEAD

DUAL

R-PDSO-G86

3.6 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

3 V

e0

.00015 Amp

22.22 mm

6 ns

K3N6C1000C-TC100

Samsung

MASK ROM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

5

16

SMALL OUTLINE, THIN PROFILE

8

.8 mm

70 Cel

2MX16

2M

0 Cel

DUAL

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

33554432 bit

4.5 V

30

240

18.41 mm

100 ns

KM23C4000B-10

Samsung

MASK ROM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

5

8

IN-LINE

70 Cel

512KX8

512K

0 Cel

DUAL

R-PDIP-T32

Not Qualified

4194304 bit

100 ns

K3N4C1000D-DC150

Samsung

MASK ROM

COMMERCIAL

42

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

5

16

IN-LINE

8

2.54 mm

70 Cel

512KX16

512K

0 Cel

DUAL

R-PDIP-T42

5.5 V

5.08 mm

15.24 mm

Not Qualified

8388608 bit

4.5 V

52.42 mm

150 ns

K3P4C1000D-DC10

Samsung

MASK ROM

COMMERCIAL

42

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

80 mA

524288 words

5

5

16

IN-LINE

DIP42,.6

8

MASK ROMs

2.54 mm

70 Cel

512KX16

512K

0 Cel

TIN LEAD

DUAL

R-PDIP-T42

5.5 V

5.08 mm

15.24 mm

Not Qualified

8388608 bit

4.5 V

ALL INPUTS AND OUTPUTS TTL COMPATIBLE

e0

.00005 Amp

52.42 mm

100 ns

KM23C4100AFP1-15

Samsung

MASK ROM

COMMERCIAL

44

WQFP

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

524288 words

5

5

8

FLATPACK, WINDOW

QFP44,.7SQ,32

16

MASK ROMs

.8 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

QUAD

S-CQFP-G44

5.5 V

2.8 mm

14 mm

Not Qualified

4194304 bit

4.5 V

e0

.00005 Amp

14 mm

150 ns

KM23V32005BT-12

Samsung

MASK ROM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

3.3

16

SMALL OUTLINE, THIN PROFILE

8

.8 mm

70 Cel

2MX16

2M

0 Cel

DUAL

R-PDSO-G44

3.6 V

1.2 mm

10.16 mm

Not Qualified

33554432 bit

3 V

USER SELECTABLE 3.3V VCC; CONFIGURABLE AS 2M X 16; PAGE MODE ACCESS TIME 30NS

18.41 mm

120 ns

K3N6V1000F-GC12

Samsung

MASK ROM

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

2097152 words

3.3

3.3

16

SMALL OUTLINE

SOP44,.63

8

MASK ROMs

1.27 mm

70 Cel

2MX16

2M

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

3.6 V

3.1 mm

12.6 mm

Not Qualified

33554432 bit

3 V

e0

.00003 Amp

28.5 mm

120 ns

KM23C8100DT-10

Samsung

MASK ROM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

524288 words

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

70 Cel

512KX16

512K

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

8388608 bit

4.5 V

CONFIGURABLE AS 512K X 16

e0

.00005 Amp

18.41 mm

100 ns

KM23C16100FP-20

Samsung

MASK ROM

COMMERCIAL

64

QFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

100 mA

2097152 words

5

5

8

FLATPACK

QFP64,.7X.95,40

16

MASK ROMs

1 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

TIN LEAD

QUAD

R-PQFP-G64

5.5 V

2.75 mm

14 mm

Not Qualified

16777216 bit

4.5 V

e0

.0001 Amp

20 mm

200 ns

KM23V16000DT-12

Samsung

MASK ROM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

1048576 words

3

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

70 Cel

1MX16

1M

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

3.3 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

2.7 V

IT CAN ALSO OPERATE AT 3.3V VCC

e0

.00003 Amp

18.41 mm

120 ns

K3N3C3000D-YE10

Samsung

MASK ROM

OTHER

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

524288 words

5

5

8

SMALL OUTLINE, THIN PROFILE

TSSOP32,.8,20

MASK ROMs

.5 mm

85 Cel

512KX8

512K

-20 Cel

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

1.2 mm

8 mm

Not Qualified

4194304 bit

4.5 V

TTL COMPATIBLE I/O

e0

.00005 Amp

18.4 mm

100 ns

MASK ROM

Mask ROM, or Read-Only Memory, is a type of non-volatile computer memory that is programmed during the manufacturing process. Mask ROM is designed to permanently store data and cannot be reprogrammed after it has been manufactured.

Mask ROM is created by a process known as photolithography. This process involves using a mask, or template, to expose specific areas of a silicon wafer to ultraviolet light. The areas that are exposed to the light are then etched away, leaving behind the patterns that make up the memory cells. Once the memory cells have been created, they are permanently programmed with the data that they will store.

Mask ROM is commonly used in devices that require permanent storage of data, such as game consoles, calculators, and other electronic devices. Because the data is permanently programmed during manufacturing, mask ROM provides a reliable and secure way to store critical data, such as system settings, firmware, and other important information.

One of the advantages of using mask ROM is that it is a cost-effective way to produce large quantities of memory. Because the data is programmed during the manufacturing process, the cost per unit is relatively low compared to other types of non-volatile memory, such as EEPROM or flash memory.