MASK ROM MASK ROM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Output Characteristics Organization No. of Words Code Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Length Maximum Access Time

K3N6U1000E-YC12

Samsung

MASK ROM

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

35 mA

2097152 words

3

3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.71,20

8

MASK ROMs

.5 mm

70 Cel

2MX16

2M

0 Cel

TIN LEAD

DUAL

R-PDSO-G48

3.3 V

1.2 mm

12 mm

Not Qualified

33554432 bit

2.7 V

e0

.00003 Amp

16.4 mm

120 ns

K3P7C1000B-GC150

Samsung

MASK ROM

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4194304 words

5

16

SMALL OUTLINE

8

1.27 mm

70 Cel

4MX16

4M

0 Cel

DUAL

R-PDSO-G44

5.5 V

3.1 mm

12.6 mm

Not Qualified

67108864 bit

4.5 V

30

225

28.5 mm

150 ns

KM23257PI-20

Samsung

MASK ROM

INDUSTRIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

75 mA

32768 words

8

IN-LINE

DIP28,.6

MASK ROMs

2.54 mm

85 Cel

32KX8

32K

-40 Cel

TIN LEAD

DUAL

R-PDIP-T28

3

Not Qualified

262144 bit

e0

200 ns

K3N6U1000D-YC

Samsung

MASK ROM

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

3

16

SMALL OUTLINE, THIN PROFILE

8

.5 mm

70 Cel

2MX16

2M

0 Cel

DUAL

R-PDSO-G48

3.3 V

1.2 mm

12 mm

Not Qualified

33554432 bit

2.7 V

16.4 mm

100 ns

KM23V16000DG-15

Samsung

MASK ROM

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

1048576 words

3

3/3.3

16

SMALL OUTLINE

SOP44,.63

8

MASK ROMs

1.27 mm

70 Cel

1MX16

1M

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

3.3 V

3.1 mm

12.6 mm

Not Qualified

16777216 bit

2.7 V

IT CAN ALSO OPERATE AT 3.3V VCC

e0

.00003 Amp

28.5 mm

150 ns

KM23S32000BTY-12

Samsung

MASK ROM

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4194304 words

2.5

8

SMALL OUTLINE, THIN PROFILE

.5 mm

70 Cel

4MX8

4M

0 Cel

DUAL

R-PDSO-G48

2.7 V

1.2 mm

12 mm

Not Qualified

33554432 bit

2.3 V

TTL COMPATIBLE I/O; CONFIGURABLE AS 2M X 16

16.4 mm

120 ns

KM23V4200D

Samsung

MASK ROM

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

25 mA

262144 words

3/3.3

16

IN-LINE

DIP40,.6

MASK ROMs

2.54 mm

70 Cel

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T40

Not Qualified

4194304 bit

e0

.00003 Amp

120 ns

K3P6C1000B-TC15

Samsung

MASK ROM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

150 mA

2097152 words

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

70 Cel

2MX16

2M

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

33554432 bit

4.5 V

ALSO CONFIGURABLE AS 2M X 16

e0

.00005 Amp

18.41 mm

150 ns

KM23C4100BFP1-12

Samsung

MASK ROM

COMMERCIAL

44

WQFP

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

524288 words

5

5

8

FLATPACK, WINDOW

QFP44,.7SQ,32

16

MASK ROMs

.8 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

QUAD

S-CQFP-G44

5.5 V

2.8 mm

14 mm

Not Qualified

4194304 bit

4.5 V

e0

.00005 Amp

14 mm

120 ns

KM23V8000B-25

Samsung

MASK ROM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

1048576 words

3.3

3/3.3

8

IN-LINE

DIP32,.6

MASK ROMs

2.54 mm

70 Cel

3-STATE

1MX8

1M

0 Cel

TIN LEAD

DUAL

R-PDIP-T32

3.6 V

5.08 mm

15.24 mm

Not Qualified

8388608 bit

2.7 V

e0

.00005 Amp

41.91 mm

250 ns

K3N3V1000D-GC10

Samsung

MASK ROM

COMMERCIAL

40

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

25 mA

262144 words

3.3

3.3

16

SMALL OUTLINE

SOP40,.56

8

MASK ROMs

1.27 mm

70 Cel

256KX16

256K

0 Cel

TIN LEAD

DUAL

R-PDSO-G40

3.6 V

2.8 mm

10.67 mm

Not Qualified

4194304 bit

3 V

ALL INPUTS AND OUTPUTS TTL COMPATIBLE

e0

.00003 Amp

25.65 mm

100 ns

KM23C512JI-15

Samsung

MASK ROM

INDUSTRIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

40 mA

65536 words

5

5

8

CHIP CARRIER

LDCC32,.5X.6

MASK ROMs

1.27 mm

85 Cel

64KX8

64K

-40 Cel

TIN LEAD

QUAD

R-PQCC-J32

3

Not Qualified

524288 bit

e0

.00004 Amp

150 ns

K3N6C1000C-GC12

Samsung

MASK ROM

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

2097152 words

5

5

16

SMALL OUTLINE

SOP44,.63

8

MASK ROMs

1.27 mm

70 Cel

2MX16

2M

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

5.5 V

3.1 mm

12.6 mm

Not Qualified

33554432 bit

4.5 V

ALSO CONFIGURABLE AS 2M X 16

e0

.00005 Amp

28.5 mm

120 ns

KM23C16005DT-12

Samsung

MASK ROM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

1048576 words

5

16

SMALL OUTLINE, THIN PROFILE

8

.8 mm

70 Cel

1MX16

1M

0 Cel

DUAL

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

16777216 bit

4.5 V

CONFIGURABLE AS 1M X 16

18.41 mm

120 ns

KM23C8000G-20

Samsung

MASK ROM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

1048576 words

5

5

8

SMALL OUTLINE

SOP32,.56

MASK ROMs

1.27 mm

70 Cel

3-STATE

1MX8

1M

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

3 mm

11.43 mm

Not Qualified

8388608 bit

4.5 V

e0

.00005 Amp

20.47 mm

200 ns

K3P4V1000E-TC10

Samsung

MASK ROM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

524288 words

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

70 Cel

512KX16

512K

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

3.6 V

1.2 mm

10.16 mm

Not Qualified

8388608 bit

3 V

e0

.00003 Amp

18.41 mm

100 ns

KM23V32000CET-15

Samsung

MASK ROM

OTHER

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

3

16

SMALL OUTLINE, THIN PROFILE

8

.8 mm

85 Cel

2MX16

2M

-20 Cel

DUAL

R-PDSO-G44

3.3 V

1.2 mm

10.16 mm

Not Qualified

33554432 bit

2.7 V

CONFIGURABLE AS 2M X 16

18.41 mm

150 ns

K3N6V1000F-GC10

Samsung

MASK ROM

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

2097152 words

3.3

3.3

16

SMALL OUTLINE

SOP44,.63

8

MASK ROMs

1.27 mm

70 Cel

2MX16

2M

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

3.6 V

3.1 mm

12.6 mm

Not Qualified

33554432 bit

3 V

e0

.00003 Amp

28.5 mm

100 ns

K3N7C1000B-TC10

Samsung

MASK ROM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

70 mA

4194304 words

5

5

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

70 Cel

4MX16

4M

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

67108864 bit

4.5 V

ALSO CONFIGURABLE AS 4M X 16

e0

.0001 Amp

18.41 mm

100 ns

KM23C4001BG-20

Samsung

MASK ROM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

60 mA

524288 words

5

5

8

SMALL OUTLINE

SOP32,.56

MASK ROMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

3 mm

11.43 mm

Not Qualified

4194304 bit

4.5 V

e0

.06 Amp

20.47 mm

200 ns

K3P9V1000A-YC12

Samsung

MASK ROM

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

80 mA

8388608 words

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSSOP48,.8,20

8

MASK ROMs

.5 mm

70 Cel

8MX16

8M

0 Cel

TIN LEAD

DUAL

R-PDSO-G48

3.6 V

1.2 mm

12 mm

Not Qualified

134217728 bit

3 V

ALL INPUTS AND OUTPUTS TTL COMPATIBLE

e0

.00003 Amp

16.4 mm

120 ns

KM23V8000CG-25

Samsung

MASK ROM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

GULL WING

30 mA

1048576 words

3.3

3.3

8

SMALL OUTLINE

SOP32,.56

MASK ROMs

1.27 mm

70 Cel

1MX8

1M

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

3

Not Qualified

8388608 bit

e0

.00005 Amp

250 ns

K3P4C1000E-DC10

Samsung

MASK ROM

COMMERCIAL

42

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

80 mA

524288 words

5

5

16

IN-LINE

DIP42,.6

8

MASK ROMs

2.54 mm

70 Cel

512KX16

512K

0 Cel

TIN LEAD

DUAL

R-PDIP-T42

3

Not Qualified

8388608 bit

e0

.00005 Amp

100 ns

KM23V64000G-15

Samsung

MASK ROM

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

8388608 words

3

8

SMALL OUTLINE

1.27 mm

70 Cel

8MX8

8M

0 Cel

DUAL

R-PDSO-G44

3.3 V

3.1 mm

12.6 mm

Not Qualified

67108864 bit

2.7 V

CONFIGURABLE AS 4M X 16

28.5 mm

150 ns

K3N6C1000E-YC120

Samsung

MASK ROM

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

5

16

SMALL OUTLINE, THIN PROFILE

8

.5 mm

70 Cel

2MX16

2M

0 Cel

DUAL

R-PDSO-G48

5.5 V

1.2 mm

12 mm

Not Qualified

33554432 bit

4.5 V

30

240

16.4 mm

120 ns

K3N6U4000C-DC15

Samsung

MASK ROM

COMMERCIAL

42

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

35 mA

2097152 words

3

3

16

IN-LINE

DIP42,.6

MASK ROMs

2.54 mm

70 Cel

2MX16

2M

0 Cel

TIN LEAD

DUAL

R-PDIP-T42

3.3 V

5.08 mm

15.24 mm

Not Qualified

33554432 bit

2.7 V

e0

.00003 Amp

52.42 mm

150 ns

KM23V8001BG-25

Samsung

MASK ROM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

1048576 words

3.3

3/3.3

8

SMALL OUTLINE

SOP32,.56

MASK ROMs

1.27 mm

70 Cel

3-STATE

1MX8

1M

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

3.6 V

3 mm

11.43 mm

Not Qualified

8388608 bit

2.7 V

e0

.03 Amp

20.47 mm

250 ns

KM23V4000DETY-12

Samsung

MASK ROM

OTHER

32

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

3

8

SMALL OUTLINE, THIN PROFILE

.5 mm

85 Cel

512KX8

512K

-20 Cel

DUAL

R-PDSO-G32

3.3 V

1.2 mm

8 mm

Not Qualified

4194304 bit

2.7 V

18.4 mm

120 ns

KM23V4100BFP-25

Samsung

MASK ROM

COMMERCIAL

44

WQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

3.3

3/3.3

8

FLATPACK, WINDOW

QFP44,.7SQ,32

16

MASK ROMs

.8 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

QUAD

S-PQFP-G44

3.6 V

2.8 mm

14 mm

Not Qualified

4194304 bit

2.7 V

e0

.00005 Amp

14 mm

250 ns

KM23V8105DT-10

Samsung

MASK ROM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

524288 words

3.3

3/3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

8

MASK ROMs

.8 mm

70 Cel

512KX16

512K

0 Cel

TIN LEAD

DUAL

R-PDSO-G44

3.6 V

1.2 mm

10.16 mm

Not Qualified

8388608 bit

3 V

e0

.00003 Amp

18.41 mm

100 ns

KM23C8105DG-10

Samsung

MASK ROM

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

80 mA

524288 words

5

5

16

SMALL OUTLINE

SOP44,.63

8

MASK ROMs

1.27 mm

70 Cel

512KX16

512K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G44

5.5 V

3.1 mm

12.6 mm

Not Qualified

8388608 bit

4.5 V

CONFIGURABLE AS 512K X 16

e0

.00005 Amp

28.5 mm

100 ns

KM23V64015BF-10

Samsung

MASK ROM

COMMERCIAL

48

TFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

60 mA

4194304 words

3

1.8,3

16

GRID ARRAY, THIN PROFILE, FINE PITCH

BGA48,6X8,30

8

MASK ROMs

.75 mm

70 Cel

4MX16

4M

0 Cel

TIN LEAD

BOTTOM

S-PBGA-B48

3.3 V

1.2 mm

9 mm

Not Qualified

67108864 bit

2.7 V

CAN ALSO BE OPERATED IN 3V TO 3.6V

e0

.00003 Amp

9 mm

100 ns

K3P4U1000D-GC120

Samsung

MASK ROM

COMMERCIAL

44

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

524288 words

3

16

SMALL OUTLINE

8

1.27 mm

70 Cel

512KX16

512K

0 Cel

DUAL

R-PDSO-G44

3.3 V

3.1 mm

12.6 mm

Not Qualified

8388608 bit

2.7 V

30

225

28.5 mm

120 ns

KM23C1011G-15

Samsung

MASK ROM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

40 mA

131072 words

5

5

8

SMALL OUTLINE

SOP32,.56

MASK ROMs

1.27 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

3 mm

11.43 mm

Not Qualified

1048576 bit

4.5 V

e0

.04 Amp

20.47 mm

150 ns

KM23257SPI-15

Samsung

MASK ROM

AUTOMOTIVE

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

75 mA

32768 words

8

IN-LINE

DIP28,.6

MASK ROMs

2.54 mm

125 Cel

32KX8

32K

-40 Cel

TIN LEAD

DUAL

R-PDIP-T28

3

Not Qualified

262144 bit

e0

150 ns

K3P5C1000F-DC15

Samsung

MASK ROM

COMMERCIAL

42

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

150 mA

1048576 words

5

5

16

IN-LINE

DIP42,.6

8

MASK ROMs

2.54 mm

70 Cel

1MX16

1M

0 Cel

TIN LEAD

DUAL

R-PDIP-T42

5.5 V

5.08 mm

15.24 mm

Not Qualified

16777216 bit

4.5 V

ALL INPUTS AND OUTPUTS TTL COMPATIBLE

e0

.00005 Amp

52.42 mm

150 ns

KM23V128005TY

Samsung

MASK ROM

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

80 mA

16777216 words

3

3/3.3

8

SMALL OUTLINE, THIN PROFILE

TSSOP48,.71,20

8

MASK ROMs

.5 mm

70 Cel

16MX8

16M

0 Cel

TIN LEAD

DUAL

R-PDSO-G48

3.3 V

1.2 mm

12 mm

Not Qualified

134217728 bit

2.7 V

USER CONFIGURABLE AS 8M X 16; CAN ALSO OPERATE AT 3V TO 3.6V SUPPLY

e0

.00003 Amp

16.4 mm

135 ns

K3N6C1000E-TC100

Samsung

MASK ROM

COMMERCIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2097152 words

5

16

SMALL OUTLINE, THIN PROFILE

8

.8 mm

70 Cel

2MX16

2M

0 Cel

DUAL

R-PDSO-G44

5.5 V

1.2 mm

10.16 mm

Not Qualified

33554432 bit

4.5 V

30

240

18.41 mm

100 ns

K3N7U1000B-YC120

Samsung

MASK ROM

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

4194304 words

3

16

SMALL OUTLINE, THIN PROFILE

8

.5 mm

70 Cel

4MX16

4M

0 Cel

DUAL

R-PDSO-G48

3.3 V

1.2 mm

12 mm

Not Qualified

67108864 bit

2.7 V

30

240

16.4 mm

120 ns

K3P6V2000B-SC12

Samsung

MASK ROM

COMMERCIAL

70

SSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

60 mA

1048576 words

3.3

3.3

32

SMALL OUTLINE, SHRINK PITCH

SOP70,.63,32

16

MASK ROMs

.8 mm

70 Cel

1MX32

1M

0 Cel

TIN LEAD

DUAL

R-PDSO-G70

3.6 V

3.1 mm

12.7 mm

Not Qualified

33554432 bit

3 V

ALSO CONFIGURABLE AS 1M X 32

e0

.00003 Amp

28.57 mm

120 ns

KM23256SJI-25

Samsung

MASK ROM

INDUSTRIAL

28

QCCJ

SQUARE

PLASTIC/EPOXY

YES

MOS

J BEND

75 mA

32768 words

5

5

8

CHIP CARRIER

LDCC28,.5SQ

MASK ROMs

1.27 mm

85 Cel

32KX8

32K

-40 Cel

TIN LEAD

QUAD

S-PQCC-J28

3

Not Qualified

262144 bit

e0

250 ns

KM23S32000DTY

Samsung

MASK ROM

COMMERCIAL

48

TSOP1

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

30 mA

4194304 words

2.5

2.5

8

SMALL OUTLINE, THIN PROFILE

TSSOP48,.71,20

8

MASK ROMs

.5 mm

70 Cel

4MX8

4M

0 Cel

TIN LEAD

DUAL

R-PDSO-G48

2.7 V

1.2 mm

12 mm

Not Qualified

33554432 bit

2.3 V

CONFIGURABLE AS 2M X 16

e0

.000005 Amp

16.4 mm

150 ns

KM23C4000HG-12

Samsung

MASK ROM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

60 mA

524288 words

5

5

8

SMALL OUTLINE

SOP32,.56

MASK ROMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

3 mm

11.43 mm

Not Qualified

4194304 bit

4.5 V

e0

.00005 Amp

20.47 mm

120 ns

KM23C1011-12

Samsung

MASK ROM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

40 mA

131072 words

5

5

8

IN-LINE

DIP32,.6

MASK ROMs

2.54 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

TIN LEAD

DUAL

R-PDIP-T32

5.5 V

5.08 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e0

.04 Amp

41.91 mm

120 ns

KM23C4001BG-15

Samsung

MASK ROM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

60 mA

524288 words

5

5

8

SMALL OUTLINE

SOP32,.56

MASK ROMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

3 mm

11.43 mm

Not Qualified

4194304 bit

4.5 V

e0

.06 Amp

20.47 mm

150 ns

KM23C4100B-12

Samsung

MASK ROM

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

60 mA

524288 words

5

5

8

IN-LINE

DIP40,.6

16

MASK ROMs

2.54 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-PDIP-T40

5.5 V

5.08 mm

15.24 mm

Not Qualified

4194304 bit

4.5 V

e0

.00005 Amp

52.43 mm

120 ns

KM23C8000DG-10

Samsung

MASK ROM

COMMERCIAL

32

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

50 mA

1048576 words

5

5

8

SMALL OUTLINE

SOP32,.56

MASK ROMs

1.27 mm

70 Cel

1MX8

1M

0 Cel

TIN LEAD

DUAL

R-PDSO-G32

5.5 V

3 mm

11.43 mm

Not Qualified

8388608 bit

4.5 V

e0

.00005 Amp

20.47 mm

100 ns

KM23C4100BG-12

Samsung

MASK ROM

COMMERCIAL

40

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

60 mA

524288 words

5

5

8

SMALL OUTLINE

SOP40,.56

16

MASK ROMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-PDSO-G40

5.5 V

2.8 mm

10.67 mm

Not Qualified

4194304 bit

4.5 V

e0

.00005 Amp

26.2 mm

120 ns

MASK ROM

Mask ROM, or Read-Only Memory, is a type of non-volatile computer memory that is programmed during the manufacturing process. Mask ROM is designed to permanently store data and cannot be reprogrammed after it has been manufactured.

Mask ROM is created by a process known as photolithography. This process involves using a mask, or template, to expose specific areas of a silicon wafer to ultraviolet light. The areas that are exposed to the light are then etched away, leaving behind the patterns that make up the memory cells. Once the memory cells have been created, they are permanently programmed with the data that they will store.

Mask ROM is commonly used in devices that require permanent storage of data, such as game consoles, calculators, and other electronic devices. Because the data is permanently programmed during manufacturing, mask ROM provides a reliable and secure way to store critical data, such as system settings, firmware, and other important information.

One of the advantages of using mask ROM is that it is a cost-effective way to produce large quantities of memory. Because the data is programmed during the manufacturing process, the cost per unit is relatively low compared to other types of non-volatile memory, such as EEPROM or flash memory.