STMicroelectronics MASK ROM 9

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Output Characteristics Organization No. of Words Code Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Length Maximum Access Time

M2364B1

STMicroelectronics

MASK ROM

COMMERCIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

80 mA

8192 words

5

5

8

IN-LINE

DIP24,.6

MASK ROMs

2.54 mm

70 Cel

8KX8

8K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T24

Not Qualified

65536 bit

e0

250 ns

M23C2001B1

STMicroelectronics

MASK ROM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

262144 words

5

8

IN-LINE

2.54 mm

70 Cel

3-STATE

256KX8

256K

0 Cel

DUAL

R-PDIP-T32

5.5 V

15.24 mm

Not Qualified

2097152 bit

4.5 V

AUTOMATIC POWER-DOWN

120 ns

M23C1001B1

STMicroelectronics

MASK ROM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

40 mA

131072 words

5

5

8

IN-LINE

DIP32,.6

MASK ROMs

2.54 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

TIN LEAD

DUAL

R-PDIP-T32

5.5 V

5.08 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

AUTOMATIC POWER-DOWN

e0

.00002 Amp

41.91 mm

100 ns

M23C512B1

STMicroelectronics

MASK ROM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

40 mA

65536 words

5

5

8

IN-LINE

DIP28,.6

MASK ROMs

2.54 mm

70 Cel

3-STATE

64KX8

64K

0 Cel

TIN LEAD

DUAL

R-PDIP-T28

5.5 V

5.08 mm

15.24 mm

Not Qualified

524288 bit

4.5 V

AUTOMATIC POWER-DOWN

e0

.00002 Amp

37.085 mm

100 ns

M23C4001B1

STMicroelectronics

MASK ROM

COMMERCIAL

32

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

5

8

IN-LINE

2.54 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

DUAL

R-PDIP-T32

5.5 V

15.24 mm

Not Qualified

4194304 bit

4.5 V

AUTOMATIC POWER-DOWN

120 ns

M23C1000B1

STMicroelectronics

MASK ROM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

40 mA

131072 words

5

5

8

IN-LINE

DIP28,.6

MASK ROMs

2.54 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

TIN LEAD

DUAL

R-PDIP-T28

5.5 V

5.08 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

AUTOMATIC POWER-DOWN

e0

.00002 Amp

37.085 mm

100 ns

M2316HB1

STMicroelectronics

MASK ROM

COMMERCIAL

24

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

70 mA

2048 words

8

IN-LINE

DIP24,.6

MASK ROMs

2.54 mm

70 Cel

2KX8

2K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T24

Not Qualified

16384 bit

e0

300 ns

M23C4000B1

STMicroelectronics

MASK ROM

COMMERCIAL

40

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

5

8

IN-LINE

16

2.54 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

DUAL

R-PDIP-T40

5.5 V

15.24 mm

Not Qualified

4194304 bit

4.5 V

AUTOMATIC POWER-DOWN

52.18 mm

120 ns

M2365B1

STMicroelectronics

MASK ROM

COMMERCIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

MOS

THROUGH-HOLE

70 mA

8192 words

5

5

8

IN-LINE

DIP28,.6

MASK ROMs

2.54 mm

70 Cel

8KX8

8K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDIP-T28

Not Qualified

65536 bit

e0

250 ns

MASK ROM

Mask ROM, or Read-Only Memory, is a type of non-volatile computer memory that is programmed during the manufacturing process. Mask ROM is designed to permanently store data and cannot be reprogrammed after it has been manufactured.

Mask ROM is created by a process known as photolithography. This process involves using a mask, or template, to expose specific areas of a silicon wafer to ultraviolet light. The areas that are exposed to the light are then etched away, leaving behind the patterns that make up the memory cells. Once the memory cells have been created, they are permanently programmed with the data that they will store.

Mask ROM is commonly used in devices that require permanent storage of data, such as game consoles, calculators, and other electronic devices. Because the data is permanently programmed during manufacturing, mask ROM provides a reliable and secure way to store critical data, such as system settings, firmware, and other important information.

One of the advantages of using mask ROM is that it is a cost-effective way to produce large quantities of memory. Because the data is programmed during the manufacturing process, the cost per unit is relatively low compared to other types of non-volatile memory, such as EEPROM or flash memory.