111 Other Function Memory ICs 8

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
KAJ000A30M-FLLL	Samsung	MEMORY CIRCUIT	OTHER	111	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	45 mA	4194304 words	2.9	PSRAM+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA111,12X13,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B111		3.1 V	1.4 mm	10 mm	Not Qualified	67108864 bit	2.7 V	SRAM IS ORGANISED AS 512K X 16		.00002 Amp	11 mm	70 ns
KBC00B7A0M-D405	Samsung	MEMORY CIRCUIT	OTHER	111	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		45 mA			FLASH+PSRAM+SRAM	3/3.3		GRID ARRAY, FINE PITCH	BGA111,12X13,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B111					Not Qualified					.000015 Amp		70 ns
K5Q5764G0M-F018	Samsung	MEMORY CIRCUIT	OTHER	111	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	45 mA	16777216 words	1.8	FLASH+PSRAM	1.8/3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA111,12X13,32	Other Memory ICs	.8 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B111		1.95 V	1.4 mm	10 mm	Not Qualified	268435456 bit	1.7 V	UTRAM IS ORGANIZED AS 4M X 16		.00005 Amp	11 mm	85 ns
KBC00B7A0M-F4050	Samsung	MEMORY CIRCUIT	OTHER	111	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		16777216 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B111		3.1 V	1.4 mm	11 mm	Not Qualified	268435456 bit	2.7 V	SRAM IS ORGANIZED AS 512K X 16; UTRAM IS ORGANIZED AS 4M X 16			11 mm
KBC00B7A0M-D4050	Samsung	MEMORY CIRCUIT	OTHER	111	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		16777216 words	2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B111	2	3.1 V	1.4 mm	11 mm	Not Qualified	268435456 bit	2.7 V	SRAM IS ORGANIZED AS 512K X 16; UTRAM IS ORGANIZED AS 4M X 16	e1		11 mm
KAE00C400M-TGNN0	Samsung	MEMORY CIRCUIT	OTHER	111	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		16777216 words	2.5			8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	16MX8	16M	-25 Cel		BOTTOM	R-PBGA-B111		2.7 V	1.4 mm	10 mm	Not Qualified	134217728 bit	2.3 V	UTRAM IS ORGANIZED AS 4M X 16; FLASH OPERATES AT 2.7V TO 3.6V SUPPLY			11 mm
KAE00C400M-TGNN	Samsung	MEMORY CIRCUIT	OTHER	111	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL					FLASH+PSRAM	2.5,3.3		GRID ARRAY, FINE PITCH	BGA111,12X13,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B111					Not Qualified					.00005 Amp		80 ns
KBC00B7A0M-F405	Samsung	MEMORY CIRCUIT	OTHER	111	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		45 mA			FLASH+PSRAM+SRAM	3/3.3		GRID ARRAY, FINE PITCH	BGA111,12X13,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B111					Not Qualified					.000015 Amp		70 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.