133 Other Function Memory ICs 76

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish I2C Control Byte Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Interleaved Burst Length Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

S72NS512RE0AHGG43

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

33554432 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

32MX16

32M

-25 Cel

BOTTOM

R-PBGA-B133

1.95 V

1 mm

10 mm

Not Qualified

536870912 bit

1.7 V

DRAM IS ORGANISED AS 16M X 16

11 mm

S72NS256RD0AHBG43

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

16MX16

16M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

268435456 bit

1.7 V

DRAM IS ORGANISED AS 8M X 16

8 mm

S72NS128RD0AHBG40

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

134217728 bit

1.7 V

DRAM IS ORGANISED AS 8M X 16

8 mm

S72XS128RD0AHBJD3

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

134217728 bit

1.7 V

8 mm

S72NS256RD0AHBM40

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

16MX16

16M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

268435456 bit

1.7 V

DRAM IS ORGANISED AS 8M X 16

8 mm

S72NS256RD0AHBG40

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

16MX16

16M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

268435456 bit

1.7 V

DRAM IS ORGANISED AS 8M X 16

8 mm

S72XS256RD0AHBGD0

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

16MX16

16M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

268435456 bit

1.7 V

8 mm

S72VS256RE0AHBJH3

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

16MX16

16M

-40 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

268435456 bit

1.7 V

8 mm

S72NS256RD0AHBL40

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

16MX16

16M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

268435456 bit

1.7 V

DRAM IS ORGANISED AS 8M X 16

8 mm

S72XS256RE0AHBH20

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

16MX16

16M

-40 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

268435456 bit

1.7 V

8 mm

S72XS128RD0AHBHE3

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

134217728 bit

1.7 V

8 mm

S72XS256RE0AHBJ20

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

16MX16

16M

-40 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

268435456 bit

1.7 V

8 mm

S72VS256RE0AHBHH3

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

16MX16

16M

-40 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

268435456 bit

1.7 V

8 mm

S72XS256RE0AHBHE0

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

16MX16

16M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

268435456 bit

1.7 V

8 mm

S72NS512RE0AHGGC3

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

FBGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

33554432 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

32MX16

32M

-25 Cel

BOTTOM

S-PBGA-B133

Not Qualified

536870912 bit

S72NS256RD0AHBM03

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

16MX16

16M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

268435456 bit

1.7 V

DRAM IS ORGANISED AS 8M X 16

8 mm

S72XS128RD0AHBJD0

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

134217728 bit

1.7 V

8 mm

S72XS256RE0AHBH23

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

16MX16

16M

-40 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

268435456 bit

1.7 V

8 mm

S72XS256RD0AHBHE3

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

16MX16

16M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

268435456 bit

1.7 V

8 mm

S72NS256RD0AHBM43

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

16MX16

16M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

268435456 bit

1.7 V

DRAM IS ORGANISED AS 8M X 16

8 mm

S72NS256RD0AHBL43

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

16MX16

16M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

268435456 bit

1.7 V

DRAM IS ORGANISED AS 8M X 16

8 mm

S72XS128RD0AHBJ23

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

8MX16

8M

-40 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

134217728 bit

1.7 V

8 mm

S72XS128RD0AHBHE0

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

134217728 bit

1.7 V

8 mm

S72XS128RD0AHBJE3

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

134217728 bit

1.7 V

8 mm

S72NS128RD0AHBM00

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

134217728 bit

1.7 V

DRAM IS ORGANISED AS 8M X 16

8 mm

S72NS128RD0AHBM03

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

134217728 bit

1.7 V

DRAM IS ORGANISED AS 8M X 16

8 mm

S72NS512RE0AHGL40

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

33554432 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

32MX16

32M

-25 Cel

BOTTOM

R-PBGA-B133

1.95 V

1 mm

10 mm

Not Qualified

536870912 bit

1.7 V

DRAM IS ORGANISED AS 16M X 16

11 mm

S72XS256RD0AHBHE0

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

16MX16

16M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

268435456 bit

1.7 V

8 mm

S72NS512RE0AHGLC0

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

FBGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

33554432 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

32MX16

32M

-25 Cel

BOTTOM

S-PBGA-B133

Not Qualified

536870912 bit

S72XS128RD0AHBHD3

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

134217728 bit

1.7 V

8 mm

S72NS512RE0AHGG40

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

33554432 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

32MX16

32M

-25 Cel

BOTTOM

R-PBGA-B133

1.95 V

1 mm

10 mm

Not Qualified

536870912 bit

1.7 V

DRAM IS ORGANISED AS 16M X 16

11 mm

S72XS256RD0AHBJD3

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

16MX16

16M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

268435456 bit

1.7 V

8 mm

S72XS256RD0AHBGE0

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

16MX16

16M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

268435456 bit

1.7 V

8 mm

S72XS128RD0AHBHH3

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

8MX16

8M

-40 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

134217728 bit

1.7 V

8 mm

S72XS128RD0AHBHH0

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

8MX16

8M

-40 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

134217728 bit

1.7 V

8 mm

S72XS256RE0AHBJ23

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

16MX16

16M

-40 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

268435456 bit

1.7 V

8 mm

S72XS128RD0AHBJH3

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

8MX16

8M

-40 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

134217728 bit

1.7 V

8 mm

S72XS256RD0AHBHD0

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

16777216 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

16MX16

16M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

268435456 bit

1.7 V

8 mm

S72XS128RD0AHBJ13

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

134217728 bit

1.7 V

8 mm

S72XS128RD0AHBGE0

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

134217728 bit

1.7 V

8 mm

S72NS512RE0AHGLC3

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

FBGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

33554432 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

32MX16

32M

-25 Cel

BOTTOM

S-PBGA-B133

Not Qualified

536870912 bit

S72NS512RE0AHGGC0

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

FBGA

SQUARE

PLASTIC/EPOXY

YES

CMOS

BALL

33554432 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

32MX16

32M

-25 Cel

BOTTOM

S-PBGA-B133

Not Qualified

536870912 bit

S72NS128RD0AHBM40

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

134217728 bit

1.7 V

DRAM IS ORGANISED AS 8M X 16

8 mm

S72NS128RD0AHBG43

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

134217728 bit

1.7 V

DRAM IS ORGANISED AS 8M X 16

8 mm

S72XS128RD0AHBJ10

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

134217728 bit

1.7 V

8 mm

S72XS128RD0AHBH20

Infineon Technologies

MEMORY CIRCUIT

INDUSTRIAL

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

8MX16

8M

-40 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

134217728 bit

1.7 V

8 mm

S72XS128RD0AHBH10

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.5 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

134217728 bit

1.7 V

8 mm

S72XS128RD0AHBGE3

Infineon Technologies

MEMORY CIRCUIT

OTHER

133

VFBGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

SYNCHRONOUS

8388608 words

1.8

FLASH+SDRAM

1.8

16

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA133,14X14,20

Other Memory ICs

.5 mm

85 Cel

8MX16

8M

-25 Cel

BOTTOM

S-PBGA-B133

1.95 V

1 mm

8 mm

Not Qualified

134217728 bit

1.7 V

8 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.