133 Other Function Memory ICs 76

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Length
S72XS128RD0AHBHD0	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	BOTTOM	S-PBGA-B133	1.95 V	1 mm	8 mm		134217728 bit	1.7 V				8 mm
S72XS256RD0AHBJE0	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	16MX16	16M	-25 Cel	BOTTOM	S-PBGA-B133	1.95 V	1 mm	8 mm	Not Qualified	268435456 bit	1.7 V				8 mm
S72XS128RD0AHBGD3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	8MX16	8M	-25 Cel	BOTTOM	S-PBGA-B133	1.95 V	1 mm	8 mm	Not Qualified	134217728 bit	1.7 V				8 mm
S72XS128RD0AHBH23	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-40 Cel	BOTTOM	S-PBGA-B133	1.95 V	1 mm	8 mm		134217728 bit	1.7 V				8 mm
S72XS256RD0AHBGD3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	16MX16	16M	-25 Cel	BOTTOM	S-PBGA-B133	1.95 V	1 mm	8 mm	Not Qualified	268435456 bit	1.7 V				8 mm
S72XS128RD0AHBJ20	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-40 Cel	BOTTOM	S-PBGA-B133	1.95 V	1 mm	8 mm		134217728 bit	1.7 V				8 mm
S72NS128RD0AHBL40	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	8MX16	8M	-25 Cel	BOTTOM	S-PBGA-B133	1.95 V	1 mm	8 mm	Not Qualified	134217728 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16			8 mm
S72NS256RD0AHBM00	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	16MX16	16M	-25 Cel	BOTTOM	S-PBGA-B133	1.95 V	1 mm	8 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16			8 mm
S72VS256RE0AHBHH0	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16MX16	16M	-40 Cel	BOTTOM	S-PBGA-B133	1.95 V	1 mm	8 mm		268435456 bit	1.7 V				8 mm
S72XS128RD0AHBJH0	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-40 Cel	BOTTOM	S-PBGA-B133	1.95 V	1 mm	8 mm		134217728 bit	1.7 V				8 mm
S72NS128RD0AHBM43	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	8MX16	8M	-25 Cel	BOTTOM	S-PBGA-B133	1.95 V	1 mm	8 mm	Not Qualified	134217728 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16			8 mm
S72XS256RE0AHBHD0	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16MX16	16M	-25 Cel	BOTTOM	S-PBGA-B133	1.95 V	1 mm	8 mm		268435456 bit	1.7 V				8 mm
S72XS256RE0AHBHD3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16MX16	16M	-25 Cel	BOTTOM	S-PBGA-B133	1.95 V	1 mm	8 mm		268435456 bit	1.7 V				8 mm
S72XS256RD0AHBJD0	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	16MX16	16M	-25 Cel	BOTTOM	S-PBGA-B133	1.95 V	1 mm	8 mm	Not Qualified	268435456 bit	1.7 V				8 mm
S72NS512RE0AHGL43	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	32MX16	32M	-25 Cel	BOTTOM	R-PBGA-B133	1.95 V	1 mm	10 mm	Not Qualified	536870912 bit	1.7 V	DRAM IS ORGANISED AS 16M X 16			11 mm
S72XS128RD0AHBGD0	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	8MX16	8M	-25 Cel	BOTTOM	S-PBGA-B133	1.95 V	1 mm	8 mm	Not Qualified	134217728 bit	1.7 V				8 mm
S72XS256RD0AHBGE3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	16MX16	16M	-25 Cel	BOTTOM	S-PBGA-B133	1.95 V	1 mm	8 mm	Not Qualified	268435456 bit	1.7 V				8 mm
S72XS128RD0AHBJE0	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	8MX16	8M	-25 Cel	BOTTOM	S-PBGA-B133	1.95 V	1 mm	8 mm	Not Qualified	134217728 bit	1.7 V				8 mm
S72NS128RD0AHBL43	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	8MX16	8M	-25 Cel	BOTTOM	S-PBGA-B133	1.95 V	1 mm	8 mm	Not Qualified	134217728 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16			8 mm
S72XS256RE0AHBHE3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16MX16	16M	-25 Cel	BOTTOM	S-PBGA-B133	1.95 V	1 mm	8 mm		268435456 bit	1.7 V				8 mm
S72VS256RE0AHBJH0	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16MX16	16M	-40 Cel	BOTTOM	S-PBGA-B133	1.95 V	1 mm	8 mm		268435456 bit	1.7 V				8 mm
S72XS128RD0AHBH13	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	BOTTOM	S-PBGA-B133	1.95 V	1 mm	8 mm		134217728 bit	1.7 V				8 mm
S72XS256RD0AHBHD3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	16MX16	16M	-25 Cel	BOTTOM	S-PBGA-B133	1.95 V	1 mm	8 mm	Not Qualified	268435456 bit	1.7 V				8 mm
S72XS256RD0AHBJE3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	16MX16	16M	-25 Cel	BOTTOM	S-PBGA-B133	1.95 V	1 mm	8 mm	Not Qualified	268435456 bit	1.7 V				8 mm
N14071F0B1F5D21F	Micron Technology	MEMORY CIRCUIT	OTHER	133	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	134217728 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	128MX16	128M	-25 Cel	BOTTOM	R-PBGA-B133	1.95 V	1 mm	10 mm		2147483648 bit	1.7 V	IT ALSO CONTAINS 512MBIT(32MBIT X 16) LPSDRAM			11 mm
M39L0R8090U3ZE6F	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133, 14X14,20		.5 mm	85 Cel	32MX16	32M	-40 Cel	BOTTOM	S-PBGA-B133	1.95 V	1 mm	8 mm		536870912 bit	1.7 V	FLASH IS ORGANISED AS 256M X 1			8 mm
M39L0R8090U3ZE6E	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	32MX16	32M	-40 Cel	BOTTOM	S-PBGA-B133	1.95 V	1 mm	8 mm		536870912 bit	1.7 V		NOT SPECIFIED	NOT SPECIFIED	8 mm
N14071F0B1F5D21E	Micron Technology	MEMORY CIRCUIT	OTHER	133	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	134217728 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	128MX16	128M	-25 Cel	BOTTOM	R-PBGA-B133	1.95 V	1 mm	10 mm		2147483648 bit	1.7 V	IT ALSO CONTAINS 512MBIT(32MBIT X 16) LPSDRAM			11 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.