2 Other Function Memory ICs 36

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish I2C Control Byte Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Interleaved Burst Length Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling

DS1996L-F5

Maxim Integrated

MEMORY CIRCUIT

OTHER

2

ROUND

METAL

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

65536 words

3/5

1

DISK BUTTON

BUTTON,.68IN

SRAMs

70 Cel

64KX1

64K

-40 Cel

END

O-MEDB-N2

6 V

Not Qualified

65536 bit

2.8 V

NOT SPECIFIED

NOT SPECIFIED

15000 ns

DS1996L-F5+

Analog Devices

MEMORY CIRCUIT

OTHER

2

ROUND

METAL

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

8192 words

3/5

8

DISK BUTTON

BUTTON,.68IN

SRAMs

70 Cel

8KX8

8K

-40 Cel

END

O-MEDB-N2

6 V

Not Qualified

65536 bit

2.8 V

NOT SPECIFIED

NOT SPECIFIED

DS1992L-F5

Maxim Integrated

MEMORY CIRCUIT

OTHER

2

ROUND

METAL

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

1024 words

3/5

1

DISK BUTTON

BUTTON,.68IN

SRAMs

70 Cel

1KX1

1K

-40 Cel

END

O-MEDB-N2

6 V

Not Qualified

1024 bit

2.8 V

e0

NOT SPECIFIED

NOT SPECIFIED

15000 ns

DS1992L-F5+

Analog Devices

MEMORY CIRCUIT

OTHER

2

ROUND

METAL

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

1024 words

3/5

1

DISK BUTTON

BUTTON,.68IN

SRAMs

70 Cel

1KX1

1K

-40 Cel

Matte Tin (Sn) - annealed

END

O-MEDB-N2

1

6 V

Not Qualified

1024 bit

2.8 V

e3

15000 ns

DS1994L-F5

Maxim Integrated

MEMORY CIRCUIT

OTHER

2

ROUND

METAL

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

4096 words

3

3/5

1

DISK BUTTON

BUTTON,.68IN

SRAMs

70 Cel

4KX1

4K

-40 Cel

TIN LEAD

END

O-MEDB-N2

1

6 V

Not Qualified

4096 bit

2.8 V

e0

15000 ns

DS1994L-F5+

Maxim Integrated

MEMORY CIRCUIT

OTHER

2

ROUND

METAL

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

4096 words

3

3/5

1

DISK BUTTON

BUTTON,.68IN

SRAMs

70 Cel

4KX1

4K

-40 Cel

MATTE TIN

END

O-MEDB-N2

1

6 V

Not Qualified

4096 bit

2.8 V

e3

15000 ns

DS1993L-F5

Maxim Integrated

MEMORY CIRCUIT

OTHER

2

ROUND

METAL

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

4096 words

3/5

1

DISK BUTTON

BUTTON,.68IN

SRAMs

70 Cel

4KX1

4K

-40 Cel

END

O-MEDB-N2

6 V

Not Qualified

4096 bit

2.8 V

e0

NOT SPECIFIED

NOT SPECIFIED

15000 ns

DS1993L-F5+

Analog Devices

MEMORY CIRCUIT

OTHER

2

ROUND

METAL

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

4096 words

3/5

1

DISK BUTTON

BUTTON,.68IN

SRAMs

70 Cel

4KX1

4K

-40 Cel

Matte Tin (Sn) - annealed

END

O-MEDB-N2

6 V

Not Qualified

4096 bit

2.8 V

e3

15000 ns

DC1920-F3

Analog Devices

MEMORY CIRCUIT

OTHER

2

ROUND

METAL

YES

1

CMOS

NO LEAD

DISK BUTTON

100 Cel

-55 Cel

TIN LEAD

END

O-MEDB-N2

Not Qualified

e0

DS1422L-F5

Analog Devices

MEMORY CIRCUIT

INDUSTRIAL

2

ROUND

METAL

YES

1

CMOS

NO LEAD

256 words

8

DISK BUTTON

85 Cel

256X8

256

-40 Cel

TIN LEAD

END

O-MEDB-N2

6 V

Not Qualified

2048 bit

2.8 V

e0

DS1963S

Analog Devices

MEMORY CIRCUIT

INDUSTRIAL

2

ROUND

METAL

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

4096 words

5

3/5

1

DISK BUTTON

BUTTON,.68IN

SRAMs

85 Cel

4KX1

4K

-40 Cel

TIN LEAD

END

O-MEDB-N2

5.25 V

Not Qualified

4096 bit

2.8 V

e0

DC1920-F5

Analog Devices

MEMORY CIRCUIT

OTHER

2

ROUND

METAL

YES

1

CMOS

NO LEAD

DISK BUTTON

100 Cel

-55 Cel

TIN LEAD

END

O-MEDB-N2

Not Qualified

e0

DS14220-F50

Analog Devices

MEMORY CIRCUIT

INDUSTRIAL

2

ROUND

METAL

YES

1

CMOS

NO LEAD

256 words

8

DISK BUTTON

85 Cel

256X8

256

-40 Cel

TIN LEAD

END

O-MEDB-N2

6 V

Not Qualified

2048 bit

2.8 V

e0

DS1420

Analog Devices

MEMORY CIRCUIT

2

ROUND

METAL

YES

1

CMOS

NO LEAD

64 words

1

DISK BUTTON

64X1

64

TIN LEAD

END

O-MEDB-N2

Not Qualified

64 bit

e0

DS90922R-L00

Analog Devices

MEMORY CIRCUIT

2

ROUND

METAL

NO

1

CMOS

THROUGH-HOLE

CYLINDRICAL

TIN LEAD

BOTTOM

O-MBCY-T2

Not Qualified

e0

DS90922R-000

Analog Devices

MEMORY CIRCUIT

2

ROUND

METAL

NO

1

CMOS

THROUGH-HOLE

CYLINDRICAL

TIN LEAD

BOTTOM

O-MBCY-T2

Not Qualified

e0

SLE66R32PC

Infineon Technologies

MEMORY CIRCUIT

OTHER

2

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

SYNCHRONOUS

4096 words

8

UNCASED CHIP

70 Cel

4KX8

4K

-25 Cel

UPPER

X-XUUC-N2

Not Qualified

32768 bit

SLE66R01PNBX1SA1

Infineon Technologies

MEMORY CIRCUIT

OTHER

2

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

SYNCHRONOUS

38 words

32

UNCASED CHIP

70 Cel

38X32

38

-25 Cel

UPPER

X-XUUC-N2

1216 bit

SLE66R01PNNBX1SA2

Infineon Technologies

MEMORY CIRCUIT

OTHER

2

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

SYNCHRONOUS

152 words

8

UNCASED CHIP

70 Cel

152X8

152

-25 Cel

UPPER

X-XUUC-N2

1216 bit

NOT SPECIFIED

NOT SPECIFIED

SLE66R04PC

Infineon Technologies

MEMORY CIRCUIT

OTHER

2

DIE

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

NO LEAD

SYNCHRONOUS

616 words

8

UNCASED CHIP

70 Cel

616X8

616

-25 Cel

UPPER

R-XUUC-N2

Not Qualified

4928 bit

SP000911428

Infineon Technologies

MEMORY CIRCUIT

OTHER

2

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

SYNCHRONOUS

38 words

32

UNCASED CHIP

70 Cel

38X32

38

-25 Cel

UPPER

X-XUUC-N2

1216 bit

SP000953914

Infineon Technologies

MEMORY CIRCUIT

OTHER

2

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

SYNCHRONOUS

38 words

32

UNCASED CHIP

70 Cel

38X32

38

-25 Cel

UPPER

X-XUUC-N2

1216 bit

SLE66R16PC

Infineon Technologies

MEMORY CIRCUIT

OTHER

2

DIE

UNSPECIFIED

UNSPECIFIED

YES

1

CMOS

NO LEAD

SYNCHRONOUS

2048 words

8

UNCASED CHIP

70 Cel

2KX8

2K

-25 Cel

UPPER

X-XUUC-N2

Not Qualified

16384 bit

SLE66R35IMCC2

Infineon Technologies

CRYPTO MEMORY

2

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

NO LEAD

1024 words

8

70 Cel

1KX8

1K

-25 Cel

DUAL

R-XDMA-N2

3.3 V

8192 bit

SLE66R35RMCC2

Infineon Technologies

CRYPTO MEMORY

2

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

NO LEAD

1024 words

8

70 Cel

1KX8

1K

-25 Cel

DUAL

R-XDMA-N2

3.3 V

8192 bit

DS1425

Maxim Integrated

MEMORY CIRCUIT

2

ROUND

METAL

YES

1

CMOS

NO LEAD

18 words

64

DISK BUTTON

18X64

18

TIN LEAD

END

O-MEDB-N2

Not Qualified

1152 bit

e0

DS1990-R3

Maxim Integrated

MEMORY CIRCUIT

INDUSTRIAL

2

ROUND

METAL

YES

1

CMOS

NO LEAD

64 words

5

1

DISK BUTTON

85 Cel

64X1

64

-40 Cel

TIN LEAD

END

O-MEDB-N2

5.5 V

Not Qualified

64 bit

4.5 V

e0

DS1963L-F5

Maxim Integrated

MEMORY CIRCUIT

OTHER

2

ROUND

METAL

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

4096 words

3/5

1

DISK BUTTON

BUTTON,.68IN

SRAMs

70 Cel

4KX1

4K

-40 Cel

END

O-MEDB-N2

6 V

Not Qualified

4096 bit

2.8 V

e0

NOT SPECIFIED

NOT SPECIFIED

DS1991L-F5+

Maxim Integrated

MEMORY CIRCUIT

OTHER

2

ROUND

METAL

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

1152 words

1

DISK BUTTON

70 Cel

1152X1

1152

-40 Cel

MATTE TIN

END

O-MEDB-N2

6 V

Not Qualified

1152 bit

2.8 V

e3

DS1963L-F5+

Maxim Integrated

MEMORY CIRCUIT

OTHER

2

ROUND

METAL

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

4096 words

1

DISK BUTTON

70 Cel

4KX1

4K

-40 Cel

MATTE TIN

END

O-MEDB-N2

6 V

Not Qualified

4096 bit

2.8 V

e3

DS1991L-F5

Maxim Integrated

MEMORY CIRCUIT

OTHER

2

ROUND

METAL

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

1152 words

3/5

1

DISK BUTTON

BUTTON,.68IN

SRAMs

70 Cel

1152X1

1152

-40 Cel

END

O-MEDB-N2

6 V

Not Qualified

1152 bit

2.8 V

e0

NOT SPECIFIED

NOT SPECIFIED

15000 ns

DS9092R-000

Maxim Integrated

MEMORY CIRCUIT

2

ROUND

METAL

NO

1

CMOS

THROUGH-HOLE

CYLINDRICAL

TIN LEAD

BOTTOM

O-MBCY-T2

Not Qualified

e0

DS9092R-L00

Maxim Integrated

MEMORY CIRCUIT

2

ROUND

METAL

NO

1

CMOS

THROUGH-HOLE

CYLINDRICAL

TIN LEAD

BOTTOM

O-MBCY-T2

Not Qualified

e0

DS2401X1-S#T

Maxim Integrated

MEMORY CIRCUIT

INDUSTRIAL

2

BCC

RECTANGULAR

UNSPECIFIED

YES

1

CMOS

BU

ASYNCHRONOUS

64 words

5

3/5

1

CHIP CARRIER

BGA2,1X2,28

Other Memory ICs

.704 mm

85 Cel

64X1

64

-40 Cel

BOTTOM

R-XBCC-B2

6 V

.649 mm

.661 mm

Not Qualified

64 bit

2.8 V

NOT SPECIFIED

NOT SPECIFIED

1.321 mm

DS2401X1

Maxim Integrated

MEMORY CIRCUIT

INDUSTRIAL

2

VFBGA

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

BALL

ASYNCHRONOUS

64 words

5

3/5

1

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

BGA2,1X2,28

Other Memory ICs

.704 mm

85 Cel

64X1

64

-40 Cel

Tin/Lead (Sn/Pb)

BOTTOM

R-PBGA-B2

1

6 V

.649 mm

.661 mm

Not Qualified

64 bit

2.8 V

e0

20

240

1.321 mm

DS2401X1#U

Maxim Integrated

MEMORY CIRCUIT

INDUSTRIAL

2

FBGA

RECTANGULAR

PLASTIC/EPOXY

YES

BALL

3/5

GRID ARRAY, FINE PITCH

BGA2,1X2,28

Other Memory ICs

.7 mm

85 Cel

-40 Cel

BOTTOM

R-PBGA-B2

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.