Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Sector Size (Words) | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Toggle Bit | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | No. of Sectors/Size | Command User Interface | Terminal Finish | I2C Control Byte | Terminal Position | No. of Ports | Write Protection | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Maximum Clock Frequency (fCLK) | Width | Qualification | Serial Bus Type | Boot Block | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | Page Size (words) | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Type | Maximum Standby Current | Interleaved Burst Length | Length | Common Flash Interface | Maximum Access Time | Programming Voltage (V) | Data Polling |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Maxim Integrated |
MEMORY CIRCUIT |
OTHER |
2 |
ROUND |
METAL |
YES |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
65536 words |
3/5 |
1 |
DISK BUTTON |
BUTTON,.68IN |
SRAMs |
70 Cel |
64KX1 |
64K |
-40 Cel |
END |
O-MEDB-N2 |
6 V |
Not Qualified |
65536 bit |
2.8 V |
NOT SPECIFIED |
NOT SPECIFIED |
15000 ns |
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|
Analog Devices |
MEMORY CIRCUIT |
OTHER |
2 |
ROUND |
METAL |
YES |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
8192 words |
3/5 |
8 |
DISK BUTTON |
BUTTON,.68IN |
SRAMs |
70 Cel |
8KX8 |
8K |
-40 Cel |
END |
O-MEDB-N2 |
6 V |
Not Qualified |
65536 bit |
2.8 V |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||||||||
Maxim Integrated |
MEMORY CIRCUIT |
OTHER |
2 |
ROUND |
METAL |
YES |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1024 words |
3/5 |
1 |
DISK BUTTON |
BUTTON,.68IN |
SRAMs |
70 Cel |
1KX1 |
1K |
-40 Cel |
END |
O-MEDB-N2 |
6 V |
Not Qualified |
1024 bit |
2.8 V |
e0 |
NOT SPECIFIED |
NOT SPECIFIED |
15000 ns |
|||||||||||||||||||||||||||||||||||||||||||
|
Analog Devices |
MEMORY CIRCUIT |
OTHER |
2 |
ROUND |
METAL |
YES |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1024 words |
3/5 |
1 |
DISK BUTTON |
BUTTON,.68IN |
SRAMs |
70 Cel |
1KX1 |
1K |
-40 Cel |
Matte Tin (Sn) - annealed |
END |
O-MEDB-N2 |
1 |
6 V |
Not Qualified |
1024 bit |
2.8 V |
e3 |
15000 ns |
||||||||||||||||||||||||||||||||||||||||||
Maxim Integrated |
MEMORY CIRCUIT |
OTHER |
2 |
ROUND |
METAL |
YES |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
4096 words |
3 |
3/5 |
1 |
DISK BUTTON |
BUTTON,.68IN |
SRAMs |
70 Cel |
4KX1 |
4K |
-40 Cel |
TIN LEAD |
END |
O-MEDB-N2 |
1 |
6 V |
Not Qualified |
4096 bit |
2.8 V |
e0 |
15000 ns |
||||||||||||||||||||||||||||||||||||||||||
|
Maxim Integrated |
MEMORY CIRCUIT |
OTHER |
2 |
ROUND |
METAL |
YES |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
4096 words |
3 |
3/5 |
1 |
DISK BUTTON |
BUTTON,.68IN |
SRAMs |
70 Cel |
4KX1 |
4K |
-40 Cel |
MATTE TIN |
END |
O-MEDB-N2 |
1 |
6 V |
Not Qualified |
4096 bit |
2.8 V |
e3 |
15000 ns |
|||||||||||||||||||||||||||||||||||||||||
Maxim Integrated |
MEMORY CIRCUIT |
OTHER |
2 |
ROUND |
METAL |
YES |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
4096 words |
3/5 |
1 |
DISK BUTTON |
BUTTON,.68IN |
SRAMs |
70 Cel |
4KX1 |
4K |
-40 Cel |
END |
O-MEDB-N2 |
6 V |
Not Qualified |
4096 bit |
2.8 V |
e0 |
NOT SPECIFIED |
NOT SPECIFIED |
15000 ns |
|||||||||||||||||||||||||||||||||||||||||||
|
Analog Devices |
MEMORY CIRCUIT |
OTHER |
2 |
ROUND |
METAL |
YES |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
4096 words |
3/5 |
1 |
DISK BUTTON |
BUTTON,.68IN |
SRAMs |
70 Cel |
4KX1 |
4K |
-40 Cel |
Matte Tin (Sn) - annealed |
END |
O-MEDB-N2 |
6 V |
Not Qualified |
4096 bit |
2.8 V |
e3 |
15000 ns |
|||||||||||||||||||||||||||||||||||||||||||
Analog Devices |
MEMORY CIRCUIT |
OTHER |
2 |
ROUND |
METAL |
YES |
1 |
CMOS |
NO LEAD |
DISK BUTTON |
100 Cel |
-55 Cel |
TIN LEAD |
END |
O-MEDB-N2 |
Not Qualified |
e0 |
||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Analog Devices |
MEMORY CIRCUIT |
INDUSTRIAL |
2 |
ROUND |
METAL |
YES |
1 |
CMOS |
NO LEAD |
256 words |
8 |
DISK BUTTON |
85 Cel |
256X8 |
256 |
-40 Cel |
TIN LEAD |
END |
O-MEDB-N2 |
6 V |
Not Qualified |
2048 bit |
2.8 V |
e0 |
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Analog Devices |
MEMORY CIRCUIT |
INDUSTRIAL |
2 |
ROUND |
METAL |
YES |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
4096 words |
5 |
3/5 |
1 |
DISK BUTTON |
BUTTON,.68IN |
SRAMs |
85 Cel |
4KX1 |
4K |
-40 Cel |
TIN LEAD |
END |
O-MEDB-N2 |
5.25 V |
Not Qualified |
4096 bit |
2.8 V |
e0 |
||||||||||||||||||||||||||||||||||||||||||||
Analog Devices |
MEMORY CIRCUIT |
OTHER |
2 |
ROUND |
METAL |
YES |
1 |
CMOS |
NO LEAD |
DISK BUTTON |
100 Cel |
-55 Cel |
TIN LEAD |
END |
O-MEDB-N2 |
Not Qualified |
e0 |
||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Analog Devices |
MEMORY CIRCUIT |
INDUSTRIAL |
2 |
ROUND |
METAL |
YES |
1 |
CMOS |
NO LEAD |
256 words |
8 |
DISK BUTTON |
85 Cel |
256X8 |
256 |
-40 Cel |
TIN LEAD |
END |
O-MEDB-N2 |
6 V |
Not Qualified |
2048 bit |
2.8 V |
e0 |
|||||||||||||||||||||||||||||||||||||||||||||||||
Analog Devices |
MEMORY CIRCUIT |
2 |
ROUND |
METAL |
YES |
1 |
CMOS |
NO LEAD |
64 words |
1 |
DISK BUTTON |
64X1 |
64 |
TIN LEAD |
END |
O-MEDB-N2 |
Not Qualified |
64 bit |
e0 |
||||||||||||||||||||||||||||||||||||||||||||||||||||||
Analog Devices |
MEMORY CIRCUIT |
2 |
ROUND |
METAL |
NO |
1 |
CMOS |
THROUGH-HOLE |
CYLINDRICAL |
TIN LEAD |
BOTTOM |
O-MBCY-T2 |
Not Qualified |
e0 |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Analog Devices |
MEMORY CIRCUIT |
2 |
ROUND |
METAL |
NO |
1 |
CMOS |
THROUGH-HOLE |
CYLINDRICAL |
TIN LEAD |
BOTTOM |
O-MBCY-T2 |
Not Qualified |
e0 |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
MEMORY CIRCUIT |
OTHER |
2 |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
4096 words |
8 |
UNCASED CHIP |
70 Cel |
4KX8 |
4K |
-25 Cel |
UPPER |
X-XUUC-N2 |
Not Qualified |
32768 bit |
|||||||||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
MEMORY CIRCUIT |
OTHER |
2 |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
38 words |
32 |
UNCASED CHIP |
70 Cel |
38X32 |
38 |
-25 Cel |
UPPER |
X-XUUC-N2 |
1216 bit |
||||||||||||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
MEMORY CIRCUIT |
OTHER |
2 |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
152 words |
8 |
UNCASED CHIP |
70 Cel |
152X8 |
152 |
-25 Cel |
UPPER |
X-XUUC-N2 |
1216 bit |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
MEMORY CIRCUIT |
OTHER |
2 |
DIE |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
616 words |
8 |
UNCASED CHIP |
70 Cel |
616X8 |
616 |
-25 Cel |
UPPER |
R-XUUC-N2 |
Not Qualified |
4928 bit |
|||||||||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
MEMORY CIRCUIT |
OTHER |
2 |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
38 words |
32 |
UNCASED CHIP |
70 Cel |
38X32 |
38 |
-25 Cel |
UPPER |
X-XUUC-N2 |
1216 bit |
||||||||||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
MEMORY CIRCUIT |
OTHER |
2 |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
38 words |
32 |
UNCASED CHIP |
70 Cel |
38X32 |
38 |
-25 Cel |
UPPER |
X-XUUC-N2 |
1216 bit |
||||||||||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
MEMORY CIRCUIT |
OTHER |
2 |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
2048 words |
8 |
UNCASED CHIP |
70 Cel |
2KX8 |
2K |
-25 Cel |
UPPER |
X-XUUC-N2 |
Not Qualified |
16384 bit |
|||||||||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
CRYPTO MEMORY |
2 |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
1024 words |
8 |
70 Cel |
1KX8 |
1K |
-25 Cel |
DUAL |
R-XDMA-N2 |
3.3 V |
8192 bit |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
CRYPTO MEMORY |
2 |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
1024 words |
8 |
70 Cel |
1KX8 |
1K |
-25 Cel |
DUAL |
R-XDMA-N2 |
3.3 V |
8192 bit |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||
Maxim Integrated |
MEMORY CIRCUIT |
2 |
ROUND |
METAL |
YES |
1 |
CMOS |
NO LEAD |
18 words |
64 |
DISK BUTTON |
18X64 |
18 |
TIN LEAD |
END |
O-MEDB-N2 |
Not Qualified |
1152 bit |
e0 |
||||||||||||||||||||||||||||||||||||||||||||||||||||||
Maxim Integrated |
MEMORY CIRCUIT |
INDUSTRIAL |
2 |
ROUND |
METAL |
YES |
1 |
CMOS |
NO LEAD |
64 words |
5 |
1 |
DISK BUTTON |
85 Cel |
64X1 |
64 |
-40 Cel |
TIN LEAD |
END |
O-MEDB-N2 |
5.5 V |
Not Qualified |
64 bit |
4.5 V |
e0 |
||||||||||||||||||||||||||||||||||||||||||||||||
Maxim Integrated |
MEMORY CIRCUIT |
OTHER |
2 |
ROUND |
METAL |
YES |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
4096 words |
3/5 |
1 |
DISK BUTTON |
BUTTON,.68IN |
SRAMs |
70 Cel |
4KX1 |
4K |
-40 Cel |
END |
O-MEDB-N2 |
6 V |
Not Qualified |
4096 bit |
2.8 V |
e0 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||||||||
|
Maxim Integrated |
MEMORY CIRCUIT |
OTHER |
2 |
ROUND |
METAL |
YES |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1152 words |
1 |
DISK BUTTON |
70 Cel |
1152X1 |
1152 |
-40 Cel |
MATTE TIN |
END |
O-MEDB-N2 |
6 V |
Not Qualified |
1152 bit |
2.8 V |
e3 |
|||||||||||||||||||||||||||||||||||||||||||||||
|
Maxim Integrated |
MEMORY CIRCUIT |
OTHER |
2 |
ROUND |
METAL |
YES |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
4096 words |
1 |
DISK BUTTON |
70 Cel |
4KX1 |
4K |
-40 Cel |
MATTE TIN |
END |
O-MEDB-N2 |
6 V |
Not Qualified |
4096 bit |
2.8 V |
e3 |
|||||||||||||||||||||||||||||||||||||||||||||||
Maxim Integrated |
MEMORY CIRCUIT |
OTHER |
2 |
ROUND |
METAL |
YES |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
1152 words |
3/5 |
1 |
DISK BUTTON |
BUTTON,.68IN |
SRAMs |
70 Cel |
1152X1 |
1152 |
-40 Cel |
END |
O-MEDB-N2 |
6 V |
Not Qualified |
1152 bit |
2.8 V |
e0 |
NOT SPECIFIED |
NOT SPECIFIED |
15000 ns |
|||||||||||||||||||||||||||||||||||||||||||
Maxim Integrated |
MEMORY CIRCUIT |
2 |
ROUND |
METAL |
NO |
1 |
CMOS |
THROUGH-HOLE |
CYLINDRICAL |
TIN LEAD |
BOTTOM |
O-MBCY-T2 |
Not Qualified |
e0 |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Maxim Integrated |
MEMORY CIRCUIT |
2 |
ROUND |
METAL |
NO |
1 |
CMOS |
THROUGH-HOLE |
CYLINDRICAL |
TIN LEAD |
BOTTOM |
O-MBCY-T2 |
Not Qualified |
e0 |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
Maxim Integrated |
MEMORY CIRCUIT |
INDUSTRIAL |
2 |
BCC |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
BU |
ASYNCHRONOUS |
64 words |
5 |
3/5 |
1 |
CHIP CARRIER |
BGA2,1X2,28 |
Other Memory ICs |
.704 mm |
85 Cel |
64X1 |
64 |
-40 Cel |
BOTTOM |
R-XBCC-B2 |
6 V |
.649 mm |
.661 mm |
Not Qualified |
64 bit |
2.8 V |
NOT SPECIFIED |
NOT SPECIFIED |
1.321 mm |
||||||||||||||||||||||||||||||||||||||
Maxim Integrated |
MEMORY CIRCUIT |
INDUSTRIAL |
2 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
64 words |
5 |
3/5 |
1 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA2,1X2,28 |
Other Memory ICs |
.704 mm |
85 Cel |
64X1 |
64 |
-40 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
R-PBGA-B2 |
1 |
6 V |
.649 mm |
.661 mm |
Not Qualified |
64 bit |
2.8 V |
e0 |
20 |
240 |
1.321 mm |
||||||||||||||||||||||||||||||||||||
|
Maxim Integrated |
MEMORY CIRCUIT |
INDUSTRIAL |
2 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
BALL |
3/5 |
GRID ARRAY, FINE PITCH |
BGA2,1X2,28 |
Other Memory ICs |
.7 mm |
85 Cel |
-40 Cel |
BOTTOM |
R-PBGA-B2 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.
One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.
Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.
Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.