24 Other Function Memory ICs 267

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
S70KS1281DPBHB023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		16777216 words	1.8		8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S70KS1281DGBHB033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		16777216 words	1.8		8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S71KL512SC0BHI000	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words	3		8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	64MX8	64M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm	6 mm		536870912 bit		HYPER RAM IS ORGANISED AS 8MX8					8 mm
S71KL256SC0BHV000	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words	3		8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	32MX8	32M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm	6 mm		268435456 bit		HYPER RAM IS ORGANISED AS 8MX8					8 mm
S71KS512SC0BHB000	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	64MX8	64M	-40 Cel		BOTTOM	R-PBGA-B24	3		1 mm	6 mm		536870912 bit		HYPER RAM IS ORGANISED AS 8MX8					8 mm
S70KL1281DABHV030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words	3		8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		3.6 V	1 mm	6 mm		134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S71KL256SC0BHB000	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		33554432 words	3		8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	32MX8	32M	-40 Cel		BOTTOM	R-PBGA-B24	3		1 mm	6 mm		268435456 bit		HYPER RAM IS ORGANISED AS 8MX8					8 mm
S70KL1281DABHV023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words	3		8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24	3	3.6 V	1 mm	6 mm		134217728 bit	2.7 V						8 mm
S71KS512SC0BHB003	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	64MX8	64M	-40 Cel		BOTTOM	R-PBGA-B24	3		1 mm	6 mm		536870912 bit		HYPER RAM IS ORGANISED AS 8MX8					8 mm
S70KS1281DPBHV020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words	1.8		8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24	3	1.95 V	1 mm	6 mm		134217728 bit	1.7 V						8 mm
S70KL1281DABHV020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words	3		8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24	3	3.6 V	1 mm	6 mm		134217728 bit	2.7 V						8 mm
S70KS1281DABHI033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words	1.8		8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S71KS512SC0BHI000	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	64MX8	64M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm	6 mm		536870912 bit		HYPER RAM IS ORGANISED AS 8MX8					8 mm
S70KL1281DABHA033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		16777216 words	3		8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		3.6 V	1 mm	6 mm		134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S70KS1281DGBHA030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		16777216 words	1.8		8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S71KS512SC0BHV000	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	64MX8	64M	-40 Cel		BOTTOM	R-PBGA-B24	3		1 mm	6 mm		536870912 bit		HYPER RAM IS ORGANISED AS 8MX8					8 mm
S70KL1281DABHB020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		16777216 words	3		8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		3.6 V	1 mm	6 mm		134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S70KS1281DGBHA033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		16777216 words	1.8		8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S71KL256SC0BHV003	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words	3		8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	32MX8	32M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm	6 mm		268435456 bit		HYPER RAM IS ORGANISED AS 8MX8					8 mm
S70KL1281DABHA020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		16777216 words	3		8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		3.6 V	1 mm	6 mm		134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S71KL256SC0BHI003	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words	3		8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	32MX8	32M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm	6 mm		268435456 bit		HYPER RAM IS ORGANISED AS 8MX8					8 mm
S71KL512SC0BHB000	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		67108864 words	3		8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	64MX8	64M	-40 Cel		BOTTOM	R-PBGA-B24	3		1 mm	6 mm		536870912 bit		HYPER RAM IS ORGANISED AS 8MX8					8 mm
S70KS1281DGBHV033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words	1.8		8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		134217728 bit	1.7 V						8 mm
S71KL256SC0BHI000	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words	3		8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	32MX8	32M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm	6 mm		268435456 bit		HYPER RAM IS ORGANISED AS 8MX8					8 mm
S70KS1281DABHV033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words	1.8		8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S70KS1281DABHI030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words	1.8		8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S71KL256SC0BHA003	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		33554432 words	3		8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	32MX8	32M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm	6 mm		268435456 bit		HYPER RAM IS ORGANISED AS 8MX8					8 mm
S71KS512SC0BHV003	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	64MX8	64M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm	6 mm		536870912 bit		HYPER RAM IS ORGANISED AS 8MX8					8 mm
S71KS512SC0BHI003	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	64MX8	64M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm	6 mm		536870912 bit		HYPER RAM IS ORGANISED AS 8MX8					8 mm
S70KS1281DPBHA023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		16777216 words	1.8		8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S70KL1281DABHV033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words	3		8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		3.6 V	1 mm	6 mm		134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S71KL512SC0BHA003	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		67108864 words	3		8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	64MX8	64M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm	6 mm		536870912 bit		HYPER RAM IS ORGANISED AS 8MX8					8 mm
S70KS1281DPBHV023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words	1.8		8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24	3	1.95 V	1 mm	6 mm		134217728 bit	1.7 V						8 mm
S70KS1281DPBHA020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		16777216 words	1.8		8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S71KS512SC0BHA000	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	64MX8	64M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm	6 mm		536870912 bit		HYPER RAM IS ORGANISED AS 8MX8					8 mm
S70KL1281DABHI033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words	3		8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		3.6 V	1 mm	6 mm		134217728 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S70KS1281DGBHI030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words	1.8		8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S70KS1281DGBHB030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		16777216 words	1.8		8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S70KS1281DGBHV030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words	1.8		8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S70KS1281DGBHI033	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words	1.8		8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S70KS1281DABHA030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		16777216 words	1.8		8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
S71KS512SC0BHA003	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		67108864 words	1.8		8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel	64MX8	64M	-40 Cel		BOTTOM	R-PBGA-B24			1 mm	6 mm		536870912 bit		HYPER RAM IS ORGANISED AS 8MX8					8 mm
S70KS1281DABHV030	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		16777216 words	1.8		8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel	16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B24		1.95 V	1 mm	6 mm		134217728 bit	1.7 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
UPD41102C-2	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE		90 mA		5	5		IN-LINE	DIP24,.3	Other Memory ICs	2.54 mm	70 Cel			-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24					Not Qualified				e0			.09 Amp		21 ns
UPD41102G-1	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING		90 mA		5	5		SMALL OUTLINE	SOP24,.5	Other Memory ICs	1.27 mm	70 Cel			-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G24					Not Qualified				e0			.09 Amp		40 ns
UPD41264V-12	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	24	ZIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS		THROUGH-HOLE			65536 words	5	5	4	IN-LINE	ZIP24,.1	Other Memory ICs	1.27 mm	70 Cel	64KX4	64K	0 Cel	Tin/Lead (Sn/Pb)	ZIG-ZAG	R-PZIP-T24					Not Qualified	262144 bit			e0					120 ns
CD40208BE98	Renesas Electronics		INDUSTRIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE							IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	85 Cel			-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24					Not Qualified				e0
UPD42505C-50H	Renesas Electronics		COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS		THROUGH-HOLE		60 mA		5	5		IN-LINE	DIP24,.4	Other Memory ICs	2.54 mm	70 Cel			-20 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T24					Not Qualified				e0			.06 Amp		40 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.