48 Other Function Memory ICs 193

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
M36W108B120ZM6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words					8	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX8	1M	-40 Cel		BOTTOM	R-PBGA-B48	3.6 V	1.35 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM			11.8 mm
M36W108AB120ZN6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	40 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		1MX8	1M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0		11.8 mm	120 ns
M36W108AT120ZM1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	70 Cel		1MX8	1M	0 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B48	3.6 V	1.35 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e1		11.8 mm	120 ns
M36W108B120ZM5T	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words					8	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX8	1M	-20 Cel		BOTTOM	R-PBGA-B48	3.6 V	1.35 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM			11.8 mm
M36W108T100ZM5T	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words					8	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX8	1M	-20 Cel		BOTTOM	R-PBGA-B48	3.6 V	1.35 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM			11.8 mm
M36W108B100ZN1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS		1048576 words					8	GRID ARRAY, VERY THIN PROFILE			1 mm	70 Cel		1MX8	1M	0 Cel		BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM			11.8 mm
M36W108B120ZM5	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	100 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1.35 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	120 ns
M36W108T120ZM1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words					8	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		1MX8	1M	0 Cel		BOTTOM	R-PBGA-B48	3.6 V	1.35 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM			11.8 mm
M36W108T100ZN6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		1MX8	1M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	100 ns
M36W108AB120ZN6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		1MX8	1M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	120 ns
M36W108B100ZM5	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	100 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1.35 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	100 ns
M36W108AT120ZN1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	40 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	70 Cel		1MX8	1M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0		11.8 mm	120 ns
M36W108B100ZM1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words					8	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		1MX8	1M	0 Cel		BOTTOM	R-PBGA-B48	3.6 V	1.35 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM			11.8 mm
M36W108B100ZN5	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	100 ns
CYU001M16OFFAS-85BVI	Infineon Technologies		OTHER	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		25 mA	1048576 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	-25 Cel		BOTTOM	R-PBGA-B48				Not Qualified	16777216 bit				.000125 Amp		85 ns
TH50VSF0401ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48				Not Qualified				e0	.00003 Amp		100 ns
TH50VSF0321BAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	524288 words		3	FLASH+SRAM	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		512KX16	512K	-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48	3.6 V	1.6 mm	10 mm	Not Qualified	8388608 bit	2.7 V	SRAM IS ORGANISED AS 128K X 8; FLASH MEMORY IS ORGANISED AS 1M X 8	e0	.00003 Amp	12 mm	100 ns
TH50VSF1420AAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words		3			16	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX16	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1.6 mm	10 mm	Not Qualified	16777216 bit	2.7 V	SRAM IS CONFIGURED AS 256 K X 8	e0		14 mm
TH50VSF1461AAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		131072 words		3			16	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		128KX16	128K	-20 Cel		BOTTOM	R-PBGA-B48	3.6 V	1.6 mm	10 mm	Not Qualified	2097152 bit	2.7 V				14 mm
TH50VSF1320AAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words		3			8	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX8	1M	-20 Cel		BOTTOM	R-PBGA-B48	3.6 V	1.6 mm	10 mm	Not Qualified	8388608 bit	2.7 V	SRAM IS CONFIGURED AS 256 K X 8			12 mm
TH50VSF1303AAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words		3			8	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1.6 mm	10 mm	Not Qualified	8388608 bit	2.7 V	SRAM IS CONFIGURED AS 256 K X 8	e0		12 mm
TH50VSF0303BAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	1048576 words		3	FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		1MX8	1M	-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48	3.6 V	1.6 mm	10 mm	Not Qualified	8388608 bit	2.7 V	SRAM IS ORGANISED AS 128K X 8	e0	.00003 Amp	12 mm	100 ns
TH50VSF1461ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		60 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel				-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48				Not Qualified				e0	.00003 Amp		100 ns
TH50VSF0400AAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	131072 words		3	FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		128KX8	128K	-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48	3.6 V	1.6 mm	10 mm	Not Qualified	1048576 bit	2.7 V		e0	.00003 Amp	14 mm	100 ns
TH50VSF1420ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48				Not Qualified				e0	.00003 Amp		100 ns
TH50VSF1320ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48				Not Qualified				e0	.00003 Amp		100 ns
TH50VSF1400ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48				Not Qualified				e0	.00003 Amp		100 ns
TH50VSF1401ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48				Not Qualified				e0	.00003 Amp		100 ns
TH50VSF0303AAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	1048576 words		3	FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1.6 mm	10 mm	Not Qualified	8388608 bit	2.7 V	SRAM IS CONFIGURED AS 128 K X 8	e0	.00004 Amp	12 mm	100 ns
TH50VSF0421ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48				Not Qualified				e0	.00003 Amp		100 ns
TH50VSF0320AAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words		3			8	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1.6 mm	10 mm	Not Qualified	8388608 bit	2.7 V	SRAM IS CONFIGURED AS 128 K X 8	e0		12 mm
TH50VSF0302AAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	1048576 words		3	FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1.6 mm	10 mm	Not Qualified	8388608 bit	2.7 V	SRAM IS CONFIGURED AS 128 K X 8	e0	.00004 Amp	12 mm	100 ns
TH50VSF0420ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48				Not Qualified				e0	.00003 Amp		100 ns
TH50VSF1302AAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words		3			8	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1.6 mm	10 mm	Not Qualified	8388608 bit	2.7 V	SRAM IS CONFIGURED AS 256 K X 8	e0		12 mm
TH50VSF1460ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		60 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel				-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48				Not Qualified				e0	.00003 Amp		100 ns
TH50VSF1421AAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words		3			16	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX16	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1.6 mm	10 mm	Not Qualified	16777216 bit	2.7 V	SRAM IS CONFIGURED AS 256 K X 8	e0		14 mm
TH50VSF1303ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48				Not Qualified				e0	.00003 Amp		100 ns
TH50VSF1400AAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	262144 words		3	FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		256KX8	256K	-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48	3.6 V	1.6 mm	10 mm	Not Qualified	2097152 bit	2.7 V		e0	.00003 Amp	14 mm	100 ns
TH50VSF0401AAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	2097152 words		3	FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		2MX8	2M	-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48	3.6 V	1.6 mm	10 mm	Not Qualified	16777216 bit	2.7 V		e0	.00003 Amp	14 mm	100 ns
TH50VSF0321AAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words		3			8	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1.6 mm	10 mm	Not Qualified	8388608 bit	2.7 V	SRAM IS CONFIGURED AS 128 K X 8	e0		12 mm
TH50VSF0320BCXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	524288 words		3	FLASH+SRAM	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		512KX16	512K	-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48	3.6 V	1.6 mm	10 mm	Not Qualified	8388608 bit	2.7 V	SRAM IS ORGANISED AS 128K X 8; FLASH MEMORY IS ORGANISED AS 1M X 8	e0	.00003 Amp	12 mm	100 ns
TH50VSF0400ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48				Not Qualified				e0	.00003 Amp		100 ns
TH50VSF1401AAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	2097152 words		3	FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		2MX8	2M	-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48	3.6 V	1.6 mm	10 mm	Not Qualified	16777216 bit	2.7 V		e0	.00003 Amp	14 mm	100 ns
TH50VSF1302ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48				Not Qualified				e0	.00003 Amp		100 ns
TH50VSF0321BCXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	524288 words		3	FLASH+SRAM	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		512KX16	512K	-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48	3.6 V	1.6 mm	10 mm	Not Qualified	8388608 bit	2.7 V	SRAM IS ORGANISED AS 128K X 8; FLASH MEMORY IS ORGANISED AS 1M X 8	e0	.00003 Amp	12 mm	100 ns
TH50VSF1321ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48				Not Qualified				e0	.00003 Amp		100 ns
TH50VSF0320BAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	524288 words		3	FLASH+SRAM	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		512KX16	512K	-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48	3.6 V	1.6 mm	10 mm	Not Qualified	8388608 bit	2.7 V	SRAM IS ORGANISED AS 128K X 8; FLASH MEMORY IS ORGANISED AS 1M X 8	e0	.00003 Amp	12 mm	100 ns
TH50VSF1321AAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words		3			8	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1.6 mm	10 mm	Not Qualified	8388608 bit	2.7 V	SRAM IS CONFIGURED AS 256 K X 8	e0		12 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.