48 Other Function Memory ICs 193

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
TH50VSF0302BCXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel					-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48					Not Qualified				e0		.00003 Amp		100 ns
TH50VSF0302BAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	1048576 words		3	FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		1MX8	1M		-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48		3.6 V	1.6 mm	10 mm	Not Qualified	8388608 bit	2.7 V	SRAM IS ORGANISED AS 128K X 8	e0		.00003 Amp	12 mm	100 ns
TH50VSF1460AAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words		3			16	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX16	1M		-20 Cel		BOTTOM	R-PBGA-B48		3.6 V	1.6 mm	10 mm	Not Qualified	16777216 bit	2.7 V					14 mm
TH50VSF1421ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel					-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48					Not Qualified				e0		.00003 Amp		100 ns
TH50VSF0303BCXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel					-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48					Not Qualified				e0		.00003 Amp		100 ns
MC-22107F1-DE1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		70 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel					-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48					Not Qualified				e0		.00002 Amp		100 ns
UPD4616112F9-BC10-BC2	Renesas Electronics		COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		35 mA	1048576 words	COMMON	2.7		2.7	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	70 Cel	3-STATE	1MX16	1M	2.6 V	-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48					Not Qualified	16777216 bit			e0		.00001 Amp		110 ns
MC-22104F1-DE1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		70 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel					-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48					Not Qualified				e0		.00002 Amp		100 ns
MC-22000F1-DB1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA		PLASTIC/EPOXY	YES		HYBRID	BALL		70 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48(UNSPEC)	Other Memory ICs		85 Cel					-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM						Not Qualified				e0		.000002 Amp		100 ns
MC-22005F1-DB1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA		PLASTIC/EPOXY	YES		HYBRID	BALL		75 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48(UNSPEC)	Other Memory ICs		85 Cel					-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM						Not Qualified				e0		.00002 Amp		100 ns
MC-22102F1-DE1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA		PLASTIC/EPOXY	YES		HYBRID	BALL		75 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48(UNSPEC)	Other Memory ICs		85 Cel					-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM						Not Qualified				e0		.000002 Amp		100 ns
UPD4616112F9-B85LX-BC2	Renesas Electronics		OTHER	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		35 mA	1048576 words	COMMON			2.7/3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-25 Cel		BOTTOM	R-PBGA-B48					Not Qualified	16777216 bit					.00001 Amp		85 ns
MC-22007F1-DB1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA		PLASTIC/EPOXY	YES		HYBRID	BALL		75 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48(UNSPEC)	Other Memory ICs		85 Cel					-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM						Not Qualified				e0		.00002 Amp		100 ns
UPD4616112F9-BC90-BC2	Renesas Electronics		COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		35 mA	1048576 words	COMMON	2.7		2.7	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	70 Cel	3-STATE	1MX16	1M	2.6 V	-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48					Not Qualified	16777216 bit			e0		.00001 Amp		90 ns
MC-22100F1-DE1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA		PLASTIC/EPOXY	YES		HYBRID	BALL		75 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48(UNSPEC)	Other Memory ICs		85 Cel					-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM						Not Qualified				e0		.000002 Amp		100 ns
MC-22004F1-DB1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA		PLASTIC/EPOXY	YES		HYBRID	BALL		75 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48(UNSPEC)	Other Memory ICs		85 Cel					-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM						Not Qualified				e0		.00002 Amp		100 ns
MC-22101F1-DE1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA		PLASTIC/EPOXY	YES		HYBRID	BALL		75 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48(UNSPEC)	Other Memory ICs		85 Cel					-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM						Not Qualified				e0		.000002 Amp		100 ns
MC-22103F1-DE1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA		PLASTIC/EPOXY	YES		HYBRID	BALL		75 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48(UNSPEC)	Other Memory ICs		85 Cel					-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM						Not Qualified				e0		.000002 Amp		100 ns
R8A66120FFA	Renesas Electronics	MEMORY CIRCUIT	COMMERCIAL	48	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	150 mA	2097152 words		3.3		3.3	4	FLATPACK, LOW PROFILE, FINE PITCH	QFP48,.35SQ,20	Other Memory ICs	.5 mm	70 Cel		2MX4	2M		0 Cel		QUAD	S-PQFP-G48		3.6 V	1.7 mm	7 mm	Not Qualified	8388608 bit	3 V					7 mm	6 ns
MC-22105F1-DE1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		70 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel					-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48					Not Qualified				e0		.00002 Amp		100 ns
MC-22003F1-DB1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA		PLASTIC/EPOXY	YES		HYBRID	BALL		70 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48(UNSPEC)	Other Memory ICs		85 Cel					-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM						Not Qualified				e0		.000002 Amp		100 ns
MC-22106F1-DE1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		70 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel					-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48					Not Qualified				e0		.00002 Amp		100 ns
MC-22001F1-DB1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA		PLASTIC/EPOXY	YES		HYBRID	BALL		70 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48(UNSPEC)	Other Memory ICs		85 Cel					-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM						Not Qualified				e0		.000002 Amp		100 ns
UPD4616112F9-B95LX-BC2	Renesas Electronics		OTHER	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		35 mA	1048576 words	COMMON			2.7/3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-25 Cel		BOTTOM	R-PBGA-B48					Not Qualified	16777216 bit					.00001 Amp		95 ns
MC-22002F1-DB1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA		PLASTIC/EPOXY	YES		HYBRID	BALL		70 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48(UNSPEC)	Other Memory ICs		85 Cel					-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM						Not Qualified				e0		.000002 Amp		100 ns
UPD4616112F9-BC80-BC2	Renesas Electronics		COMMERCIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		35 mA	1048576 words	COMMON	2.7		2.7	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	70 Cel	3-STATE	1MX16	1M	2.6 V	-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48					Not Qualified	16777216 bit			e0		.00001 Amp		80 ns
MC-22006F1-DB1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA		PLASTIC/EPOXY	YES		HYBRID	BALL		75 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48(UNSPEC)	Other Memory ICs		85 Cel					-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM						Not Qualified				e0		.00002 Amp		100 ns
K1S32161CE-FI70T	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		35 mA	2097152 words	COMMON	2.9		2.9	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B48	3				Not Qualified	33554432 bit				240	.0001 Amp		70 ns
K1S6416BCD-FI70T	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA	4194304 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel		BOTTOM	R-PBGA-B48					Not Qualified	67108864 bit					.00012 Amp		70 ns
K1S3216BCC-FI70	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		35 mA	2097152 words	COMMON			1.8/2	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B48					Not Qualified	33554432 bit					.0001 Amp		70 ns
K1S32161CC-FI70T	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA	2097152 words	COMMON	2.9		2.9	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B48					Not Qualified	33554432 bit					.0001 Amp		70 ns
K1S32161CC-BI70T	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA	2097152 words	COMMON	2.9		2.9	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B48					Not Qualified	33554432 bit					.0001 Amp		70 ns
K1S32161CD-BI70T	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		35 mA	2097152 words	COMMON	2.9		2.9	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B48					Not Qualified	33554432 bit					.0001 Amp		70 ns
K1S321615A-E	Samsung		OTHER	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		35 mA	2097152 words	COMMON	2.9		2.9	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-25 Cel		BOTTOM	R-PBGA-B48					Not Qualified	33554432 bit					.00001 Amp		85 ns
K1S161615M-EI70	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA	1048576 words	COMMON	2.9		2.9	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	2.7 V	-40 Cel		BOTTOM	R-PBGA-B48					Not Qualified	16777216 bit					.000015 Amp		70 ns
K1S321611C-FI70	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		35 mA	2097152 words	COMMON	2.9		2.9	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B48					Not Qualified	33554432 bit					.0001 Amp		70 ns
K1S32161CC-FI700	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA	2097152 words	COMMON	2.9		2.9	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B48					Not Qualified	33554432 bit					.0001 Amp		70 ns
K1S6416BCD-FI70	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA	4194304 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel		BOTTOM	R-PBGA-B48					Not Qualified	67108864 bit					.00012 Amp		70 ns
K1S161611M-EI70	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA	1048576 words	COMMON	3		3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M		-40 Cel		BOTTOM	R-PBGA-B48					Not Qualified	16777216 bit					.00008 Amp		70 ns
K1S3216B1C-FI85	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		30 mA	2097152 words	COMMON			1.8/2	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B48					Not Qualified	33554432 bit					.0001 Amp		85 ns
K1S6416BCD-BI70T	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA	4194304 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel		BOTTOM	R-PBGA-B48					Not Qualified	67108864 bit					.00012 Amp		70 ns
K1S6416BCD-BI70	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA	4194304 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel		BOTTOM	R-PBGA-B48					Not Qualified	67108864 bit					.00012 Amp		70 ns
K1S3216BCC-FI85	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		35 mA	2097152 words	COMMON			1.8/2	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B48					Not Qualified	33554432 bit					.0001 Amp		85 ns
K1S32161CC-BI700	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA	2097152 words	COMMON	2.9		2.9	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B48					Not Qualified	33554432 bit					.0001 Amp		70 ns
KS7308	Samsung	MEMORY CIRCUIT	COMMERCIAL	48	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		2048 words		5			10	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		2KX10	2K		0 Cel		QUAD	S-PQFP-G48		5.25 V	1.6 mm	7 mm	Not Qualified	20480 bit	4.75 V					7 mm
K1S32161CD-FI70T	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		35 mA	2097152 words	COMMON	2.9		2.9	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M		-40 Cel		BOTTOM	R-PBGA-B48					Not Qualified	33554432 bit					.0001 Amp		70 ns
K1S64161CD-BI70T	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA	4194304 words	COMMON	2.9		2.9	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel		BOTTOM	R-PBGA-B48					Not Qualified	67108864 bit					.00012 Amp		70 ns
K1S6416BCD-BI700	Samsung		INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA	4194304 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M		-40 Cel		BOTTOM	R-PBGA-B48					Not Qualified	67108864 bit					.00012 Amp		70 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.