48 Other Function Memory ICs 193

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MR256A08BCMA35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	65 mA	32768 words		3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		32KX8	32K	-40 Cel		BOTTOM	S-PBGA-B48	3	3.6 V	1.35 mm	8 mm	Not Qualified	262144 bit	3 V					.007 Amp	8 mm	35 ns
MR256A08BMA35	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	65 mA	32768 words		3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		32KX8	32K	0 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm	8 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.007 Amp	8 mm	35 ns
MR256A08BCMA35R	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	65 mA	32768 words		3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		32KX8	32K	-40 Cel		BOTTOM	S-PBGA-B48	3	3.6 V	1.35 mm	8 mm	Not Qualified	262144 bit	3 V					.007 Amp	8 mm	35 ns
MR256A08BMA35R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	65 mA	32768 words		3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		32KX8	32K	0 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm	8 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.007 Amp	8 mm	35 ns
MR0D08BMA45R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	65 mA	131072 words		3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	70 Cel		128KX8	128K	0 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm	8 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.008 Amp	8 mm	45 ns
MR2A16AVMA35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		262144 words		3.3		3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	105 Cel		256KX16	256K	-40 Cel		BOTTOM	S-PBGA-B48	3	3.6 V	1.35 mm	8 mm	Not Qualified	4194304 bit	3 V			40	260	.028 Amp	8 mm	35 ns
MR2A16ACMA35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		262144 words		3.3		3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		256KX16	256K	-40 Cel		BOTTOM	S-PBGA-B48	3	3.6 V	1.35 mm	8 mm	Not Qualified	4194304 bit	3 V			40	260	.028 Amp	8 mm	35 ns
MR256D08BMA45	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	65 mA	32768 words		3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	70 Cel		32KX8	32K	0 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm	8 mm	Not Qualified	262144 bit	3 V			40	260	.008 Amp	8 mm	45 ns
MR0A08BMA35	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	65 mA	131072 words		3.3		3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		128KX8	128K	0 Cel		BOTTOM	S-PBGA-B48	3	3.6 V	1.35 mm	8 mm	Not Qualified	1048576 bit	3 V					.007 Amp	8 mm	35 ns
MR0A16ACMA35	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	165 mA	65536 words		3.3		3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	85 Cel		64KX16	64K	-40 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm	8 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.012 Amp	8 mm	35 ns
MR2A16AVMA35R	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		262144 words		3.3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.75 mm	105 Cel		256KX16	256K	-40 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm	8 mm		4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		8 mm
MR0A16AMA35R	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	48	LFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	155 mA	65536 words		3.3		3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	70 Cel		64KX16	64K	0 Cel		BOTTOM	S-PBGA-B48		3.6 V	1.35 mm	8 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.012 Amp	8 mm	35 ns
M36W108AB120ZM5	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	100 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		1MX8	1M	-20 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e1			.00002 Amp	11.8 mm	120 ns
M36W108B100ZM6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words					8	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX8	1M	-40 Cel		BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM					11.8 mm
M36W108AT100ZN5T	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	40 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0				11.8 mm	100 ns
M36W108AT100ZN6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		1MX8	1M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0			.00002 Amp	11.8 mm	100 ns
M36W108T120ZM5	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	100 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0			.00002 Amp	11.8 mm	120 ns
M36W108B100ZM5T	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words					8	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX8	1M	-20 Cel		BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM					11.8 mm
M36W108B100ZN1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	70 Cel		1MX8	1M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0			.00002 Amp	11.8 mm	100 ns
M36W108B120ZN6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS		1048576 words					8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		1MX8	1M	-40 Cel		BOTTOM	R-PBGA-B48		3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM					11.8 mm
M36W108T120ZM5T	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words					8	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX8	1M	-20 Cel		BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM					11.8 mm
M36W108AB120ZM6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	100 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		1MX8	1M	-40 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e1			.00002 Amp	11.8 mm	120 ns
M36W108AB120ZN5T	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	40 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0				11.8 mm	120 ns
M36W108AB100ZM6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		1MX8	1M	-40 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e1				11.8 mm	100 ns
M36W108AT120ZM6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		1MX8	1M	-40 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e1				11.8 mm	120 ns
M36W108AB120ZN5	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0			.00002 Amp	11.8 mm	120 ns
M36W108B120ZN5	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0			.00002 Amp	11.8 mm	120 ns
M36W108AB120ZM1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	100 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	70 Cel		1MX8	1M	0 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e1			.00002 Amp	11.8 mm	120 ns
M36W108AT100ZM6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	100 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		1MX8	1M	-40 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e1			.00002 Amp	11.8 mm	100 ns
M36W108T120ZN5	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0			.00002 Amp	11.8 mm	120 ns
M36W108AB120ZM6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		1MX8	1M	-40 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e1				11.8 mm	120 ns
M36W108T120ZN1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS		1048576 words					8	GRID ARRAY, VERY THIN PROFILE			1 mm	70 Cel		1MX8	1M	0 Cel		BOTTOM	R-PBGA-B48		3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM					11.8 mm
M69AW024BL70ZB8	STMicroelectronics		OTHER	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		20 mA	1048576 words	COMMON	3		3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	-30 Cel		BOTTOM	R-PBGA-B48					Not Qualified	16777216 bit						.00007 Amp		70 ns
M36W108B120ZM1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	100 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	70 Cel		1MX8	1M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0			.00002 Amp	11.8 mm	120 ns
M36W108AB100ZN6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	40 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		1MX8	1M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0				11.8 mm	100 ns
M36W108B120ZM1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words					8	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		1MX8	1M	0 Cel		BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM					11.8 mm
M36W108B120ZN1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS		1048576 words					8	GRID ARRAY, VERY THIN PROFILE			1 mm	70 Cel		1MX8	1M	0 Cel		BOTTOM	R-PBGA-B48		3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM					11.8 mm
M36W108B100ZN6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		1MX8	1M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0			.00002 Amp	11.8 mm	100 ns
M36W108AT100ZN6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	40 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		1MX8	1M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0				11.8 mm	100 ns
M36W108B100ZN6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS		1048576 words					8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		1MX8	1M	-40 Cel		BOTTOM	R-PBGA-B48		3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM					11.8 mm
M36W108B120ZN5T	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS		1048576 words					8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		1MX8	1M	-20 Cel		BOTTOM	R-PBGA-B48		3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM					11.8 mm
M36W108AT100ZM1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	100 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	70 Cel		1MX8	1M	0 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e1			.00002 Amp	11.8 mm	100 ns
M36W108AT120ZN6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	40 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		1MX8	1M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0				11.8 mm	120 ns
M36W108T120ZN5T	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS		1048576 words					8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		1MX8	1M	-20 Cel		BOTTOM	R-PBGA-B48		3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM					11.8 mm
M36W108AT120ZN6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		1MX8	1M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0			.00002 Amp	11.8 mm	120 ns
M36W108T100ZN5	STMicroelectronics	MEMORY CIRCUIT	OTHER	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.6 V	1 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0			.00002 Amp	11.8 mm	100 ns
M36W108T120ZM6	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	100 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		1MX8	1M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0			.00002 Amp	11.8 mm	120 ns
M36W108T120ZM6T	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words					8	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX8	1M	-40 Cel		BOTTOM	R-PBGA-B48		3.6 V	1.35 mm	9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM					11.8 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.