54 Other Function Memory ICs 45

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	Technology	Terminal Form	Maximum Supply Current	No. of Words	Sequential Burst Length	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Clock Frequency (fCLK)	Qualification	Memory Density	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Maximum Access Time
PSD8131V70J1T	STMicroelectronics	MEMORY CIRCUIT		54			SQUARE	PLASTIC/EPOXY	YES		J BEND									CHIP CARRIER									QUAD	S-PQCC-J54			Not Qualified
PSD8131V70JT	STMicroelectronics	MEMORY CIRCUIT		54			SQUARE	PLASTIC/EPOXY	YES		J BEND									CHIP CARRIER									QUAD	S-PQCC-J54			Not Qualified
PSD8131V90J1T	STMicroelectronics	MEMORY CIRCUIT		54			SQUARE	PLASTIC/EPOXY	YES		J BEND									CHIP CARRIER									QUAD	S-PQCC-J54			Not Qualified
PSD8131V12J1T	STMicroelectronics	MEMORY CIRCUIT		54			SQUARE	PLASTIC/EPOXY	YES		J BEND									CHIP CARRIER									QUAD	S-PQCC-J54			Not Qualified
PSD8131V90JT	STMicroelectronics	MEMORY CIRCUIT		54			SQUARE	PLASTIC/EPOXY	YES		J BEND									CHIP CARRIER									QUAD	S-PQCC-J54			Not Qualified
PSD8131V12JT	STMicroelectronics	MEMORY CIRCUIT		54			SQUARE	PLASTIC/EPOXY	YES		J BEND									CHIP CARRIER									QUAD	S-PQCC-J54			Not Qualified
SM2603T-6	Infineon Technologies		COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		8388608 words	1,2,4,8,FP	COMMON			2.5/3.3,3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	DUAL	R-PDSO-G54		166 MHz	Not Qualified	67108864 bit			1,2,4,8	4.3 ns
SM2604T-10	Infineon Technologies		COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		4194304 words	1,2,4,8,FP	COMMON			2.5/3.3,3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	DUAL	R-PDSO-G54		100 MHz	Not Qualified	67108864 bit			1,2,4,8	4.7 ns
SM2603T-7.5	Infineon Technologies		COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		8388608 words	1,2,4,8,FP	COMMON			2.5/3.3,3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	DUAL	R-PDSO-G54		133 MHz	Not Qualified	67108864 bit			1,2,4,8	4.5 ns
SM2604T-7.5	Infineon Technologies		COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		4194304 words	1,2,4,8,FP	COMMON			2.5/3.3,3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	DUAL	R-PDSO-G54		133 MHz	Not Qualified	67108864 bit			1,2,4,8	4.5 ns
SM2603T-10	Infineon Technologies		COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		8388608 words	1,2,4,8,FP	COMMON			2.5/3.3,3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	8MX8	8M	0 Cel	DUAL	R-PDSO-G54		100 MHz	Not Qualified	67108864 bit			1,2,4,8	4.7 ns
SM2604T-6	Infineon Technologies		COMMERCIAL	54	TSOP	4096	RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	GULL WING		4194304 words	1,2,4,8,FP	COMMON			2.5/3.3,3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	Other Memory ICs	.8 mm	70 Cel	3-STATE	4MX16	4M	0 Cel	DUAL	R-PDSO-G54		166 MHz	Not Qualified	67108864 bit			1,2,4,8	4.3 ns
K1B3216BDD-FI70	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	35 mA	2097152 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B54			Not Qualified	33554432 bit		.0001 Amp		70 ns
K1B3216BDD-BI700	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	35 mA	2097152 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B54			Not Qualified	33554432 bit		.0001 Amp		70 ns
K1B1616B8B-BI70T	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL		1048576 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	BOTTOM	R-PBGA-B54			Not Qualified	16777216 bit				70 ns
K1B3216BDD-BI70	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	35 mA	2097152 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B54			Not Qualified	33554432 bit		.0001 Amp		70 ns
K1B6416B2D-FI70T	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	4194304 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	BOTTOM	R-PBGA-B54			Not Qualified	67108864 bit		.00012 Amp		70 ns
K1B1616BDB-FI70T	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL		1048576 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	BOTTOM	R-PBGA-B54			Not Qualified	16777216 bit				70 ns
K1C6416B8D-FI700	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	4194304 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	BOTTOM	R-PBGA-B54	3		Not Qualified	67108864 bit	240	.00003 Amp		70 ns
K1B6416B2D-BI70T	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	4194304 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	BOTTOM	R-PBGA-B54			Not Qualified	67108864 bit		.00012 Amp		70 ns
K1B6416B2D-BI700	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	4194304 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	BOTTOM	R-PBGA-B54			Not Qualified	67108864 bit		.00012 Amp		70 ns
K1C6416B8D-BI700	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	4194304 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	BOTTOM	R-PBGA-B54	3		Not Qualified	67108864 bit	260	.00003 Amp		70 ns
K1C6416B8D-BI70T	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	4194304 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	BOTTOM	R-PBGA-B54	3		Not Qualified	67108864 bit	260	.00003 Amp		70 ns
K1B1616BDB-BI700	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL		1048576 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	BOTTOM	R-PBGA-B54			Not Qualified	16777216 bit				70 ns
K1B3216BDD-FI700	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	35 mA	2097152 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B54			Not Qualified	33554432 bit		.0001 Amp		70 ns
K1B6416B8D-FI70T	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	4194304 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	BOTTOM	R-PBGA-B54			Not Qualified	67108864 bit		.00012 Amp		70 ns
K1B1616B8B-BI70	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL		1048576 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	BOTTOM	R-PBGA-B54			Not Qualified	16777216 bit				70 ns
K1B6416B8D-BI70T	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	4194304 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	BOTTOM	R-PBGA-B54			Not Qualified	67108864 bit		.00012 Amp		70 ns
K1B3216BDD-FI70T	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	35 mA	2097152 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B54			Not Qualified	33554432 bit		.0001 Amp		70 ns
K1C6416B2D-BI70	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	4194304 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	BOTTOM	R-PBGA-B54	3		Not Qualified	67108864 bit	260	.00003 Amp		70 ns
K1B3216BDD-BI70T	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	35 mA	2097152 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	BOTTOM	R-PBGA-B54			Not Qualified	33554432 bit		.0001 Amp		70 ns
K1B1616BDB-BI70T	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL		1048576 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	BOTTOM	R-PBGA-B54			Not Qualified	16777216 bit				70 ns
K1C6416B8D-BI70	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	4194304 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	BOTTOM	R-PBGA-B54	3		Not Qualified	67108864 bit	260	.00003 Amp		70 ns
K1B1616B8B-BI700	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL		1048576 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	BOTTOM	R-PBGA-B54			Not Qualified	16777216 bit				70 ns
K1C6416B8D-FI70	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	4194304 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	BOTTOM	R-PBGA-B54	3		Not Qualified	67108864 bit	240	.00003 Amp		70 ns
K1C6416B2D-BI70T	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	4194304 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	BOTTOM	R-PBGA-B54	3		Not Qualified	67108864 bit	260	.00003 Amp		70 ns
K1B1616BDB-FI700	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL		1048576 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	BOTTOM	R-PBGA-B54			Not Qualified	16777216 bit				70 ns
K1B6416B6C-BI700	Samsung	MEMORY CIRCUIT	INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA				1.85	FLASH+PSRAM	1.85		GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel				-40 Cel	BOTTOM	R-PBGA-B54			Not Qualified			.18 Amp		70 ns
K1C6416B8D-FI70T	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	4194304 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	BOTTOM	R-PBGA-B54	3		Not Qualified	67108864 bit	240	.00003 Amp		70 ns
K1B6416B8D-BI700	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	4194304 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	BOTTOM	R-PBGA-B54			Not Qualified	67108864 bit		.00012 Amp		70 ns
K1C6416B2D-BI700	Samsung		INDUSTRIAL	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	40 mA	4194304 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	BOTTOM	R-PBGA-B54	3		Not Qualified	67108864 bit	260	.00003 Amp		70 ns
MT45W4MW16BFB-701WTES	Micron Technology			54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	35 mA	4194304 words		COMMON			1.8,1.8/3	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm		3-STATE	4MX16	4M		BOTTOM	R-PBGA-B54			Not Qualified	67108864 bit		.00012 Amp		70 ns
MT45W4MW16BFB-706WTES	Micron Technology			54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	30 mA	4194304 words		COMMON			1.8,1.8/3	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm		3-STATE	4MX16	4M		BOTTOM	R-PBGA-B54			Not Qualified	67108864 bit		.00012 Amp		70 ns
MT45W8MW16BGX-706WTES	Micron Technology		OTHER	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	30 mA	8388608 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	8MX16	8M	-30 Cel	BOTTOM	R-PBGA-B54			Not Qualified	134217728 bit		.0002 Amp		70 ns
MT45W8MW16BGX-708WTES	Micron Technology		OTHER	54	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	CMOS	BALL	35 mA	8388608 words		COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA54,6X9,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	8MX16	8M	-30 Cel	BOTTOM	R-PBGA-B54			Not Qualified	134217728 bit		.0002 Amp		70 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.