56 Other Function Memory ICs 107

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Length	Maximum Access Time
CY8C24033-24PVXI	Cypress Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	56	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS	8192 words				1	SMALL OUTLINE, SHRINK PITCH			.635 mm	85 Cel	8KX1	8K	-40 Cel		DUAL	R-PDSO-G56		5.25 V	2.794 mm	7.5057 mm	Not Qualified	8192 bit	3 V					18.415 mm
S71VS256RD0AHKBC3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA56,10X14,20	Other Memory ICs	.5 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B56					Not Qualified
S71VS256RD0AHK3C3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA56,10X14,20	Other Memory ICs	.5 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B56					Not Qualified
S98GL064NB0HI0072	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B56		3.6 V	1.2 mm	7 mm		67108864 bit	2.7 V	PSEUDO STATIC RAM IS ORGANISED AS 2M X 16		NOT SPECIFIED	NOT SPECIFIED	9 mm
S71VS256RD0AHK3C0	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA56,10X14,20	Other Memory ICs	.5 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B56					Not Qualified
S71VS256RD0AHKBL0	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA56,10X14,20	Other Memory ICs	.5 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B56					Not Qualified
S71VS256RD0AHKBL3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA56,10X14,20	Other Memory ICs	.5 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B56					Not Qualified
S71VS256RD0AHKC03	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA56,10X14,20	Other Memory ICs	.5 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B56					Not Qualified
S71VS128RB0AHKCL3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA56,10X14,20	Other Memory ICs	.5 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B56					Not Qualified
S71VS256RC0AHKCL3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA56,10X14,20	Other Memory ICs	.5 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B56					Not Qualified
S71VS256RD0AHK403	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA56,10X14,20	Other Memory ICs	.5 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B56					Not Qualified
S98GL064NB0HI0082	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B56		3.6 V	1.2 mm	7 mm		67108864 bit	2.7 V	PSEUDO STATIC RAM IS ORGANISED AS 2M X 16		NOT SPECIFIED	NOT SPECIFIED	9 mm
S71VS256RD0AHKBC0	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA56,10X14,20	Other Memory ICs	.5 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B56					Not Qualified
S71GL064NA0BFW0U2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	67108864 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260	9 mm	90 ns
S71XS256RD0ZHEC42	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16X16	16	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm	8 mm	Not Qualified	256 bit	1.7 V	PSRAM IS ORGANIZED AS 8M X 16				9.2 mm
S71GL032NA0BFW0Z2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-25 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260	9 mm	90 ns
S71GL064NB0BFW0K0	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	S-PBGA-B56					Not Qualified								90 ns
S71NS256RC0AHKJL3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,10X14,20	Other Memory ICs	.5 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm	8 mm	Not Qualified	268435456 bit	1.7 V	PSRAM IS ORGANISED AS 64 MB(4 MB X 16-BIT)				9.2 mm
S71GL032N40BHW0P3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-25 Cel		BOTTOM	R-PBGA-B56		3.1 V	1.2 mm	7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 256K X 16				9 mm
S71GL032NA0BHW0U3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260	9 mm	90 ns
S71NS256RD0AHKJL3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA56,10X14,20	Other Memory ICs	.5 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B56					Not Qualified
S71GL032NA0BHW0F2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	S-PBGA-B56					Not Qualified								90 ns
S71GL064NB0BFW0U3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	67108864 bit	2.7 V	PSRAM IS ORGANIZED AS 2M X 16	e1	40	260	9 mm
S71NS256RD0AHKJL0	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA56,10X14,20	Other Memory ICs	.5 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B56					Not Qualified
S71GL064NB0BFW0P0	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	S-PBGA-B56					Not Qualified								90 ns
S71GL032NA0BHW0U2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260	9 mm	90 ns
S98NS128NB0HW0023	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm	8 mm		134217728 bit	1.7 V					9.2 mm
S71GL032NA0BFW0Z3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-25 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260	9 mm	90 ns
S71GL032N40BHW0K2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-25 Cel		BOTTOM	R-PBGA-B56		3.1 V	1.2 mm	7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 256K X 16				9 mm
S71NS064NB0BHWTN2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm	8 mm		67108864 bit	1.7 V	PSRAM IS ORGANIZED AS 2M X 16				9.2 mm
S71GL064NB0BFW0K2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	S-PBGA-B56					Not Qualified								90 ns
S71GL064NA0BHW0F2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	S-PBGA-B56					Not Qualified								90 ns
S71GL032N80BHW0K2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-25 Cel		BOTTOM	R-PBGA-B56		3.1 V	1.2 mm	7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 512K X 16				9 mm
S71GL064NB0BFW0P2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	S-PBGA-B56					Not Qualified								90 ns
S71GL064NB0BHW0U2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words	3	FLASH+PSRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	67108864 bit	2.7 V	PSRAM IS ORGANIZED AS 2M X 16	e1	40	260	9 mm	90 ns
S71GL064NA0BFW0Z3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	67108864 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260	9 mm	90 ns
S71NS064NB0BHWTN3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm	8 mm		67108864 bit	1.7 V	PSRAM IS ORGANIZED AS 2M X 16				9.2 mm
S71GL032NA0BFW0U3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-25 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260	9 mm	90 ns
S71GL032NA0BHW0B2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	S-PBGA-B56					Not Qualified								90 ns
S71XS256RD0ZHEC02	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16X16	16	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm	8 mm	Not Qualified	256 bit	1.7 V	PSRAM IS ORGANIZED AS 8M X 16				9.2 mm
S71GL032N80BHW0P2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-25 Cel		BOTTOM	R-PBGA-B56		3.1 V	1.2 mm	7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 512K X 16				9 mm
S71GL064NB0BHW0Z2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words	3	FLASH+PSRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	67108864 bit	2.7 V	PSRAM IS ORGANIZED AS 2M X 16	e1	40	260	9 mm	90 ns
S98NS256PB0HW0013	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm	8 mm		268435456 bit	1.7 V					9.2 mm
S71GL064NA0BHW0U3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	67108864 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260	9 mm	90 ns
S71GL064NB0BFW0U2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	67108864 bit	2.7 V	PSRAM IS ORGANIZED AS 2M X 16	e1	40	260	9 mm
S71GL064NA0BHW0Z2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	67108864 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260	9 mm	90 ns
S71GL032NA0BHW0Z3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260	9 mm	90 ns
S71GL032N80BFW0P2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-25 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 512K X 16	e1	40	260	9 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.