56 Other Function Memory ICs 107

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Length	Maximum Access Time
S71GL064NA0BHW0B2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL				3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	S-PBGA-B56					Not Qualified								90 ns
S71GL032N80BFW0K2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-25 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 512K X 16	e1	40	260	9 mm
S71GL064NB0BFW0K3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL				3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	S-PBGA-B56					Not Qualified								90 ns
S71GL032NA0BFW0U2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-25 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260	9 mm	90 ns
S71NS128NC0BJWRN1	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)	BOTTOM	R-PBGA-B56	3	1.95 V	1.2 mm	8 mm	Not Qualified	134217728 bit	1.7 V		e2	40	260	9.2 mm
S71XS256RD0ZHEC40	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16X16	16	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm	8 mm	Not Qualified	256 bit	1.7 V	PSRAM IS ORGANIZED AS 8M X 16				9.2 mm
S71GL032N40BHW0K3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-25 Cel		BOTTOM	R-PBGA-B56		3.1 V	1.2 mm	7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 256K X 16				9 mm
S71NS128NB0BJWRN1	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)	BOTTOM	R-PBGA-B56	3	1.95 V	1.2 mm	8 mm	Not Qualified	134217728 bit	1.7 V		e2	40	260	9.2 mm
S98NS128PB0HW0013	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,10X14,20	Other Memory ICs	.5 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm	8 mm	Not Qualified	134217728 bit	1.7 V					9.2 mm
S98NS128PB0HW0010	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,10X14,20	Other Memory ICs	.5 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm	8 mm	Not Qualified	134217728 bit	1.7 V					9.2 mm
S71GL064NA0BHW0U2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	67108864 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260	9 mm	90 ns
S71NS128NA0BJWRN1	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)	BOTTOM	R-PBGA-B56	3	1.95 V	1.2 mm	8 mm	Not Qualified	134217728 bit	1.7 V		e2	40	260	9.2 mm
S71XS256RD0ZHEC03	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16X16	16	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm	8 mm	Not Qualified	256 bit	1.7 V	PSRAM IS ORGANIZED AS 8M X 16				9.2 mm
S71GL064NA0BHW0Z0	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	67108864 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260	9 mm	90 ns
S71GL032N40BHW0K0	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-25 Cel		BOTTOM	R-PBGA-B56		3.1 V	1.2 mm	7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 256K X 16				9 mm
S71GL032NA0BHW0Z2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260	9 mm	90 ns
S71XS256RD0ZHEC43	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16X16	16	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm	8 mm	Not Qualified	256 bit	1.7 V	PSRAM IS ORGANIZED AS 8M X 16				9.2 mm
S71GL032N40BHW0P0	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-25 Cel		BOTTOM	R-PBGA-B56		3.1 V	1.2 mm	7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 256K X 16				9 mm
S71GL064NA0BHW0Z3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	67108864 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260	9 mm	90 ns
S71GL064NB0BFW0P3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL				3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	S-PBGA-B56					Not Qualified								90 ns
S71GL032NA0BHW0U0	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260	9 mm	90 ns
S71XS256RD0ZHEC00	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16X16	16	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm	8 mm	Not Qualified	256 bit	1.7 V	PSRAM IS ORGANIZED AS 8M X 16				9.2 mm
S71GL032N40BHW0P2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-25 Cel		BOTTOM	R-PBGA-B56		3.1 V	1.2 mm	7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 256K X 16				9 mm
S71GL032NA0BHW0Z0	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260	9 mm	90 ns
S98NS128NB0HW0020	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm	8 mm		134217728 bit	1.7 V					9.2 mm
S71GL064NB0BFW0Z2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	67108864 bit	2.7 V	PSRAM IS ORGANIZED AS 2M X 16	e1	40	260	9 mm
S71NS512RD0ZHEKL2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	32MX16	32M	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm	6.2 mm	Not Qualified	536870912 bit	1.7 V	PSRAM IS ORGANISED AS 128 MB(8 MB X 16-BIT)				7.7 mm
S71GL064NA0BHW0U0	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	67108864 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260	9 mm	90 ns
74FCT162701ATPV	Renesas Electronics	MEMORY CIRCUIT	INDUSTRIAL	56	SSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING		5 mA		5		5		SMALL OUTLINE, SHRINK PITCH	SSOP56,.4	Other Memory ICs	.635 mm	85 Cel			-40 Cel	TIN LEAD	DUAL	R-PDSO-G56	1				Not Qualified				e0	20	225
K5N1229ACD-BQ120	Samsung	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	32MX16	32M	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm	8 mm		536870912 bit	1.7 V	SRAM IS ORGANISED AS 8M X 16				9.2 mm
M36W0R6050L4ZSF	Micron Technology	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,6X10,20	Other Memory ICs	.5 mm	85 Cel	4MX16	4M	-30 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56		1.95 V	1.2 mm	4 mm	Not Qualified	67108864 bit	1.7 V	IT ALSO HAVING 32-MBIT PSRAM	e1			6 mm	70 ns
M36L0R7060U3ZSF	Micron Technology	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56		1.95 V	1.2 mm	6 mm	Not Qualified	134217728 bit	1.7 V		e1			8 mm
M36L0R7060U3ZSE	Micron Technology	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56		1.95 V	1.2 mm	6 mm	Not Qualified	134217728 bit	1.7 V		e1			8 mm
MT38M5041A3034EZZI.XR6	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	56	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	32MX16	32M	-40 Cel		BOTTOM	S-PBGA-B56		1.95 V	1 mm	8 mm		536870912 bit	1.7 V	IT ALSO CONTAINS 128MBIT(8MBIT X 16) PSRAM				8 mm
PF38F5070M0Y3DG	Micron Technology	MEMORY CIRCUIT		56	TFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	1.8	FLASH+PSRAM		1	FLATPACK, THIN PROFILE, FINE PITCH	BGA56,10X14,20		.5 mm	85 Cel	512MX1	512M	-25 Cel		BOTTOM	S-PBGA-B56		2 V	1.2 mm	8 mm		536870912 bit	1.7 V	PSEUDO SRAM IS ORGANIZED AS 256M X 1 BIT				8 mm	70 ns
PF38F5060M0Y4DE	Micron Technology	MEMORY CIRCUIT		56	TFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		536870912 words	1.8	FLASH+PSRAM		1	FLATPACK, THIN PROFILE, FINE PITCH	BGA56,10X14,20		.5 mm	85 Cel	512MX1	512M	-25 Cel		BOTTOM	S-PBGA-B56		2 V	1.2 mm	8 mm		536870912 bit	1.7 V	PSEUDO SRAM IS ORGANIZED AS 128M X 1 BIT				8 mm	70 ns
M36W0R6050U4ZSE	Micron Technology	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,6X10,20	Other Memory ICs	.5 mm	85 Cel	4MX16	4M	-30 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56		1.95 V	1.2 mm	4 mm	Not Qualified	67108864 bit	1.7 V	IT ALSO HAVING 32-MBIT PSRAM	e1			6 mm	70 ns
M36W0R6040U4ZSE	Micron Technology	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,6X10,20	Other Memory ICs	.5 mm	85 Cel	4MX16	4M	-30 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56		1.95 V	1.2 mm	4 mm	Not Qualified	67108864 bit	1.7 V	IT ALSO HAVING 16-MBIT PSRAM	e1			6 mm	70 ns
NP8P128AE3TSM60E	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words	3			8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel	16MX8	16M	-40 Cel		DUAL	R-PDSO-G56		3.6 V	1.2 mm	14 mm		134217728 bit	2.7 V					18.4 mm
NP8P128A13TSM60E	Micron Technology	MEMORY CIRCUIT	COMMERCIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words	3			8	SMALL OUTLINE, THIN PROFILE			.5 mm	70 Cel	16MX8	16M	0 Cel		DUAL	R-PDSO-G56		3.6 V	1.2 mm	14 mm		134217728 bit	2.7 V					18.4 mm
M36W0R6040L4ZSF	Micron Technology	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,6X10,20	Other Memory ICs	.5 mm	85 Cel	4MX16	4M	-30 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56		1.95 V	1.2 mm	4 mm	Not Qualified	67108864 bit	1.7 V	IT ALSO HAVING 16-MBIT PSRAM	e1			6 mm	70 ns
M36W0R5040U4ZSE	Micron Technology	MEMORY CIRCUIT	OTHER	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL				1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA56,6X10,20	Other Memory ICs	.5 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B56					Not Qualified								70 ns
M36L0R7060L3ZSE	Micron Technology	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56		1.95 V	1.2 mm	6 mm	Not Qualified	134217728 bit	1.7 V		e1			8 mm
M36W0R5040L4ZSE	Micron Technology	MEMORY CIRCUIT	OTHER	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL				1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA56,6X10,20	Other Memory ICs	.5 mm	85 Cel			-30 Cel		BOTTOM	R-PBGA-B56					Not Qualified								70 ns
M36L0R7050L3ZSF	Micron Technology	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56		1.95 V	1.2 mm	6 mm	Not Qualified	134217728 bit	1.7 V		e1			8 mm
M36L0R7050U3ZSF	Micron Technology	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56		1.95 V	1.2 mm	6 mm	Not Qualified	134217728 bit	1.7 V		e1			8 mm
M36W0R6050L4ZSE	Micron Technology	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		4194304 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,6X10,20	Other Memory ICs	.5 mm	85 Cel	4MX16	4M	-30 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56		1.95 V	1.2 mm	4 mm	Not Qualified	67108864 bit	1.7 V	IT ALSO HAVING 32-MBIT PSRAM	e1			6 mm	70 ns
NP8P128AE3BSM60E	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SYNCHRONOUS		16777216 words	3			8	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel	16MX8	16M	-40 Cel		DUAL	R-PDSO-G56		3.6 V	1.2 mm	14 mm		134217728 bit	2.7 V					18.4 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.