69 Other Function Memory ICs 124

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
TH50VSF2583AASB	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words		3	FLASH+SRAM	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B69	3.6 V	1.4 mm	9 mm	Not Qualified	33554432 bit	2.7 V	USER CONFIGURABLE AS 4M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 256K X 16 OR 512K X 8	e0		12 mm	70 ns
TH50VSF3683AASB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	4194304 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B69	3.3 V	1.4 mm	9 mm	Not Qualified	67108864 bit	2.7 V	USER CONFIGURABLE AS 8M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 512K X 16 OR 1M X 8	e0		12 mm	80 ns
TH50VSF3681AASB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	4194304 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B69	3.3 V	1.4 mm	9 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 8M SRAM MEMORY	e0		12 mm	90 ns
TH50VSF4682AASB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	4194304 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-30 Cel	TIN LEAD	BOTTOM	R-PBGA-B69	3.1 V	1.4 mm	10 mm	Not Qualified	67108864 bit	2.7 V	USER CONFIGURABLE AS 8M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 1M X 16 OR 2M X 8	e0		12 mm	80 ns
TH50VPN5640EBSB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	4194304 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B69	3.1 V	1.4 mm	9 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 32MBIT PSEUDO SRAM			12 mm	85 ns
TH50VSF2581AASB	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words		3	FLASH+SRAM	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B69	3.6 V	1.4 mm	9 mm	Not Qualified	33554432 bit	2.7 V	USER CONFIGURABLE AS 4M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 256 X 16 OR 512K X 8	e0		12 mm	90 ns
TC51WHM716AXGN70	Toshiba		OTHER	69	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		55 mA	8388608 words	COMMON	3		3	16	GRID ARRAY, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B69				Not Qualified	134217728 bit				.000003 Amp		70 ns
TH50VSF4683AASB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	4194304 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-30 Cel	TIN LEAD	BOTTOM	R-PBGA-B69	3.1 V	1.4 mm	10 mm	Not Qualified	67108864 bit	2.7 V	USER CONFIGURABLE AS 8M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 1M X 16 OR 2M X 8	e0		12 mm	80 ns
TH50VSF2582AASB	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words		3	FLASH+SRAM	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B69	3.6 V	1.4 mm	9 mm	Not Qualified	33554432 bit	2.7 V	USER CONFIGURABLE AS 4M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 256K X 16 OR 512K X 8	e0		12 mm	70 ns
TH50VSF3580AASB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-30 Cel	TIN LEAD	BOTTOM	R-PBGA-B69	3.3 V	1.4 mm	9 mm	Not Qualified	33554432 bit	2.67 V	USER CONFIGURABLE AS 4M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 512K X 16 OR 1M X 8	e0		12 mm	90 ns
TH50VSF3581AASB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-30 Cel	TIN LEAD	BOTTOM	R-PBGA-B69	3.3 V	1.4 mm	9 mm	Not Qualified	33554432 bit	2.67 V	USER CONFIGURABLE AS 4M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 512K X 16 OR 1M X 8	e0		12 mm	90 ns
TC51WKM716AXGN75	Toshiba		OTHER	69	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		55 mA	8388608 words	COMMON			1.8,3	16	GRID ARRAY, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B69				Not Qualified	134217728 bit				.000003 Amp		75 ns
TH50VSF3680AASB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	4194304 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B69	3.3 V	1.4 mm	9 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 8M SRAM MEMORY	e0		12 mm	90 ns
TH50VSF3583AASB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-30 Cel	TIN LEAD	BOTTOM	R-PBGA-B69	3.3 V	1.4 mm	9 mm	Not Qualified	33554432 bit	2.67 V	USER CONFIGURABLE AS 4M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 512K X 16 OR 1M X 8	e0		12 mm	80 ns
TH50VSF3582AASB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-30 Cel	TIN LEAD	BOTTOM	R-PBGA-B69	3.3 V	1.4 mm	9 mm	Not Qualified	33554432 bit	2.67 V	USER CONFIGURABLE AS 4M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 512K X 16 OR 1M X 8	e0		12 mm	80 ns
TH50VSF2580AASB	Toshiba	MEMORY CIRCUIT	INDUSTRIAL	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words		3	FLASH+SRAM	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel	TIN LEAD	BOTTOM	R-PBGA-B69	3.6 V	1.4 mm	9 mm	Not Qualified	33554432 bit	2.7 V	USER CONFIGURABLE AS 4M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 256 X 16 OR 512K X 8	e0		12 mm	90 ns
TH50VSF3682AASB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	4194304 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B69	3.3 V	1.4 mm	9 mm	Not Qualified	67108864 bit	2.7 V	USER CONFIGURABLE AS 8M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 512K X 16 OR 1M X 8	e0		12 mm	80 ns
K5A3340YBA-T870	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM			11 mm
K5A3340YTB-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 512K X 8/256K X 16 SRAM		.00001 Amp	11 mm	70 ns
K5A3340YTC-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL		77 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69				Not Qualified					.00001 Amp		80 ns
K5A3380YTC-T8550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANIZED AS 1M X 8 / 512K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8			11 mm
K5A3240YTB-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 512K X 8/256K X 16 SRAM		.00001 Amp	11 mm	80 ns
K5A3380YTC-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL		50 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69				Not Qualified					.000015 Amp		70 ns
K5A3340YTA-T970	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM			11 mm
KAD060300B-TLLL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69				Not Qualified					.00002 Amp		70 ns
KAD050300B-TLLL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69				Not Qualified					.00002 Amp		70 ns
K5A3240YBA-T370	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM			11 mm
K5A3240YBC-T7550	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANIZED AS 512K X 8 / 256K X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 4M X 8			11 mm
K5A3280YTB-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 1M X 8/512K X 16 SRAM		.000015 Amp	11 mm	80 ns
K5A3340YBB-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 512K X 8/256K X 16 SRAM		.00001 Amp	11 mm	70 ns
K5S3216Y0M-T010	Samsung	MEMORY CIRCUIT	OTHER	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-25 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	9 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 1M X 16 BIT FULL CMOS SRAM			12.5 mm
KAD100300B-TLLL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69				Not Qualified					.00002 Amp		70 ns
K5A3380YTB-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 1M X 8/512K X 16 SRAM		.000015 Amp	11 mm	70 ns
KAD070300B-TNNL0	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words		2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B69	3.1 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	UTRAM IS ORGANIZED AS 2M X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 8M X 8			11.6 mm
K5A3240YBA-T970	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM			11 mm
K5A3240YBB-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 512K X 8/256K X 16 SRAM		.00001 Amp	11 mm	80 ns
KAD080300B-TLLL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69				Not Qualified					.00002 Amp		70 ns
KAD050300B-TNNL	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69				Not Qualified					.00002 Amp		80 ns
K5P2881BCM-F0700	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		16777216 words		2.6			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		16MX8	16M	-40 Cel		BOTTOM	R-PBGA-B69	2.9 V	1.2 mm	8 mm	Not Qualified	134217728 bit	2.4 V	SRAM IS ORGANIZED AS 512K X 16			11 mm
K5A3380YTA-T955	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (1MX8 / 512KX16) FULL CMOS SRAM			11 mm
KAD080300B-TNNL0	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words		2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-40 Cel		BOTTOM	R-PBGA-B69	3.1 V	1.4 mm	8 mm	Not Qualified	67108864 bit	2.7 V	UTRAM IS ORGANIZED AS 2M X 16; NOR FLASH CAN ALSO BE ORGANIZED AS 8M X 8			11.6 mm
K5A3240YBA-T870	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM			11 mm
K5Q6432YCM-T010	Samsung	MEMORY CIRCUIT	OTHER	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	25 mA	8388608 words		3	FLASH+PSRAM	3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		8MX8	8M	-25 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	67108864 bit	2.7 V	IT ALSO CONTAINS 2M X 16 UTRAM		.00015 Amp	13 mm	100 ns
K5A3340YTA-T370	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM			11 mm
K5A3280YTB-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 1M X 8/512K X 16 SRAM		.000015 Amp	11 mm	70 ns
K5A3380YBB-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-40 Cel		BOTTOM	R-PBGA-B69	3.3 V	1.2 mm	8 mm	Not Qualified	33554432 bit	2.7 V	FLASH IS ORGANISED AS 4M X 8 AND ALSO CONTAINS 1M X 8/512K X 16 SRAM		.000015 Amp	11 mm	80 ns
K5A3340YBC-T755	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL		77 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69				Not Qualified					.00001 Amp		70 ns
K5A3240YBC-T855	Samsung	MEMORY CIRCUIT	INDUSTRIAL	69	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL		77 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel				-40 Cel		BOTTOM	S-PBGA-B69				Not Qualified					.00001 Amp		80 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.